Radiation damage annealing kinetics in lithium-diffused silicon solar cells
Development of computer program to predict performance from specified cell characteristics in lithium-diffused silicon solar cells
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Development of computer program to predict performance from specified cell characteristics in lithium-diffused silicon solar cells
Instrumentation and methods for study of radiation damage in lithium diffused silicon using infrared photoconductivity and spectroscopy as probes
Production and annealing of defects in lithium diffused bulk silicon after irradiation with 30 MeV electrons and fission neutrons at 300 K
Effect of sintering TiAg contact on p/n cells from effect of heat treatment on lithium diffused cells
Describing instrumentation and methods used in study of radiation damage in lithium-diffused silicon
Damage structure due to 1 to 5 MeV electron irradiation studied in lithium diffused silicon for solar cells
The work performed to investigate the effect of various process parameters on the performance of lithium doped P/N solar cells is described. Effort was concentrated in four main areas: (1) the starting material, (2) the boron diffusion, (3) the lithium diffusion, and (4) the contact system. Investigation of starting material primarily involved comparison of crucible grown silicon (high oxygen content) and Lopex silicon (low oxygen content). In addition, the effect of varying growing parameters of crucible grown silicon on lithium cell output was also examined. The objective of the boron diffusion studies was to obtain a diffusion process which produced high efficiency cells with minimal silicon stressing and could be scaled up to process 100 or more cells per diffusion. Contact studies included investigating sintering of the TiAg contacts and evaluation of the contact integrity.
Electron paramagnetic resonance of lithium silicon
Various aspects of lithium solar cell fabrication processes
Fabrication and characteristics of radiation resistant lithium doped p-n solar cells
Effects of electron irradiation on lithium-doped silicon
Boron diffusion on silicon investigated for use in solar cells
Boron diffused radiation resistant solar cells
TiPdAg and Al contact systems on p/n cells for humidity resistance and strength
Development of boron diffusion process to diffuse large quantities of stress-free, high efficiency, radiation resistant solar cells
Sample is doped by constructing a sandwich of five slices of silicon with lithium dopant deposited on the outside surfaces of the second and fourth slices and placing the sample in the middle. Upon heating, the lithium diffuses through the carrier slices and into the sample wafer.
Lithium hydride cell uses vanadium diaphragm electrode as a hydrogen diffuser. Vanadium is high in hydrogen gas solubility and permeability, is least sensitive to adverse surface effects, maintains good mechanical strength in hydrogen atmospheres, and appears to be compatible with all alkali-halide electrolytes and lithium metals.
The application of contacts and coatings after lithium diffusion provides good electrical output and satisfactory contact adhesion by sintering for short times at temperatures less than the lithium diffusion temperature. High output and repeatability are obtainable from both oxygen-rich and oxygen-lean silicon. These fabrication sequence alterations have led to higher cell output, better appearance, and increased contact strength.