Disorder-Induced Magnetotransport Anomalies in Amorphous and Textured Co 1– x Si x Semimetal Thin Films
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Magnetoresistance studies of 2D systems are often shaped by the motion of electrons that occupy spatially confined wave functions, such as topological edge modes and disorder-induced bound states. Directly probing how such states form and behave in situ , under applied currents, provides a clear way of connecting microscopic physics to the macroscopic transport response. Here, in this Letter, scanning tunneling potentiometry is used to probe the local, current-induced electrochemical potential of carriers in graphene near circular 𝑝−𝑛 junctions in an out-of-plane magnetic field ranging from 0 to 1.4 T. These measurements provide detailed information about the motion of carriers at the nanometer scale, revealing how it evolves with increasing field. The electrochemical potential displays distinct patterns, such as dipoles, spirals, and concentric disks in weak, moderate, and high fields, respectively. The size and orientation of these patterns can be used to understand how local carrier dynamics change in different transport regimes as well as to directly extract physical parameters such as the electron mean free path and cyclotron diameter.
We perform classical Monte Carlo and stochastic Landau-Lifshitz-Gilbert simulations to study the temperature-dependent magnetism of the kagome antiferromagnet Weyl metal Mn3Ge, and we find that a long-range chiral order sets in at a transition temperature well below the Neel temperature (T N ). Based on the crystalline symmetries imposed by the chiral magnetic order, we argue for the presence of multiple isoenergetic Weyl nodes (nodes that are at the same energy and with a congruent Fermi surface around them) near the chemical potential. Using the semiclassical Boltzmann equations, we show that the combined contribution to the net longitudinal magnetoconductance (LMC) and the planar Hall conductance (PHC) from tilted Weyl nodes can lead to signatures that are qualitatively distinct from that of a single pair of Weyl nodes. In particular, we show that magnetic orders with different chiralities can give rise to different periods in LMC and PHC as a function of the in-plane magnetic field direction. As a result, this is ultimately related to differences in the symmetry-imposed constraints on the Weyl nodes.
Here, we report anisotropic resistivity measurements of the heavy-fermion superconductor CeRh 2 As 2 in magnetic fields up to 16 T and temperatures down to 0.35 K. The measured CeRh 2 As 2 resistivity shows a signature corresponding to the suggested quadrupole-density-wave order state at T 0 ~0.5 K for both measured directions. For a magnetic field applied along the tetragonal a axis, T 0 is enhanced with magnetic field reaching ~1.75 K at 16 T. Further, a magnetic field-induced transition occurs at μ 0 H m ~ 8.1 T corresponding to a change to a new broken symmetry state. For a magnetic field applied along the c axis, T 0 is suppressed below our base temperature ~0.35 K by μ 0 H ~ 4.5 T, a field close to the previously reported field-induced transition within the superconducting state suggested to be from an even-parity to an odd-parity state. Our results indicate that the multiple superconducting phases in CeRh 2 As 2 are intimately tied to the suppression of the proposed quadrupole-density-wave phase at T 0 .
Magnetometry and magnetoresistance (MR) data taken on the van der Waals ferromagnet Fe 3−𝑥 GeTe 2 (FGT) reveal three distinct contributions to the MR: a linear negative component, a contribution from closed Fermi-surface orbits, and an enhancement proportional to the square of the applied magnetic field which is linked to a noncoplanar spin arrangement. Contrary to earlier studies on FGT, by accounting for the field dependence of the anomalous Hall effect, we find that the ordinary Hall coefficient decreases markedly below 80 K, indicating a significant change in character of the electrons and holes on the Fermi-surface at this temperature. The resulting altered ground state eventually causes the Hall coefficient to reverse sign at 35 K. Our Hall data support the proposal that Kondo-lattice behavior develops in this 𝑑-electron material below 80 K. Additional evidence comes from the negative linear component of the MR, which arises from electron-magnon scattering with an atypical temperature dependence attributable to the onset of Kondo screening.
Chiral transport in topological materials, arising from the interplay between topology and chirality, holds significant potential for energy-efficient spintronics and quantum information technologies through dissipationless, coherent charge flow. However, the emergence of chiral transport by tuning the electronic states of novel chiral materials is largely unexplored. Here, we report chiral transport driven by correlated Dirac fermions in SrNbO 3 epitaxial thin films, where strain-induced nonsymmorphic symmetry of oxygen octahedra tunes the material from metallic to Dirac states. Such symmetry-driven Dirac fermions feature a remarkable enhancement of electron mobility and magnetoresistance. Signatures of chiral transport induced by the chiral anomaly, including negative longitudinal magnetoresistance and twofold planar Hall oscillation, are observed in the Dirac semimetallic state, whereas they are absent in the metallic state of SrNbO 3 thin films. This work highlights a crucial role of symmetry engineering in generating chiral charge transport in oxide Dirac semimetals, opening an avenue to novel oxide-based topological and quantum devices.
We report on the effects of visible light on the low temperature electronic properties of the spin-polarized two dimensional electron system (2DES) formed at the interfaces between LaAlO 3 , EuTiO 3 and (001) SrTiO 3 . A strong, persistent modulation of both longitudinal and transverse conductivity was obtained using light emitting diodes (LEDs) with emissions at different wavelengths in the visible spectrum range. In particular, Hall effect data show that visible light induces a non-volatile electron filling of bands with mainly 3 dxz,yz character, and at the same time an enhancement of the anomalous Hall effect associated to the magnetic properties of the system. Accordingly, a suppression of the weak-anti localization corrections to the magneto-conductance is found, which correlates with an enhancement of the spin-polarization and of the ferromagnetic character of 2DES. The results establish the LED-induced photo-doping as a viable route for the control of the ground state properties of artificial spin-polarized oxide 2DES.
(a) Cross-sectional TEM micrograph of 14 period InAs/GaSb SL, demonstrating abrupt interfaces; and (b) Shubnikov-de Haas oscillations testifying high mobility.
The 5d pyrochlore iridate family (R 2 Ir 2 O 7 , where R is a rare earth ion) has garnered significant attention due to its topological properties, such as Weyl semimetallic phases and axion insulator. However, the investigation of these properties has been impeded by severe iridium loss during growth, which results in the formation of defects and impurities. Herein, we demonstrate a method for controlling impurities and defects in strained Nd 2 Ir 2 O 7 (NIO-227) films by compensating for iridium loss during growth. By increasing the amount of IrO 2 target ablated, we enhance the morphological quality and electrical transport properties of the fabricated films. Furthermore, our results show that the anomalous Hall effects of the films have a strong dependency on the amount of IrO 2 target ablated, which is attributed to the structural inhomogeneity in the NIO-227 films. Our work provides a way to control defects and impurities and would promote the investigation of topological phases in the family R 2 Ir 2 O 7 .
Significance When two sheets of graphene are twisted to the magic angle of 1.1 ∘ , the resulting flat moiré bands can host exotic correlated electronic states such as superconductivity and ferromagnetism. Here, we show transport properties of a twisted bilayer graphene device at 1.38 ∘ , far enough above the magic angle that we do not expect exotic correlated states. Instead, we see several unusual behaviors in the device’s resistivity upon tuning both charge carrier density and perpendicular magnetic field. We can reproduce these behaviors with a surprisingly simple model based on Hofstadter’s butterfly. These results shed light on the underlying properties of twisted bilayer graphene.
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Van der Waals (vdW) ferromagnets are an important class of materials for spintronics applications. The recent discovery of atomically vdW magnets CrI 3 and Cr 2 Ge 2 Te 6 has triggered a renaissance in the area of two-dimensional (2D) magnetism. Herein we systematically studied 2H-Mn 0.28 TaS 2 single crystal, a 2D vdW ferromagnet with T c ~ 82.3K, and a large in-plane magnetic anisotropy. Mn K-edge x-ray absorption spectroscopy was measured to provide information on its electronic state and local atomic environment. The detailed magnetic isotherms measured in the vicinity of T c indicates that the spin coupling inside 2H-Mn 0.28 TaS 2 is of a 3D Heisenberg type coupled with the attractive long-range interaction between spins that decay as J(r) ≈ r –4.85 . Both resistivity ρ(T) and thermopower S(T) exhibit anomalies near T c , confirming that the hole-type transport carriers strongly interact with local moments. Furthermore, an unusual angle-dependent magnetoresistance is further observed, suggesting a possible field-induced novel magnetic structure.
Pd 3 Bi 2 Se 2 is a rare realization of a superconducting metal with a non-zero topological invariant. Here, in this study, we report the growth of high-quality single crystals of layered Pd 3 Bi 2 Se 2 with a superconducting transition at T c ≈ 0.80 K and upper critical fields of ~10 mT and ~5 mT for the in plane and out-of-plane directions, respectively. Our density functional theory (DFT) calculations reveal three pairs of doubly degenerate bands crossing the Fermi level all displaying clear three dimensional dispersion consistent with the overall low electronic anisotropy (<2). The multiband electronic nature of Pd 3 Bi 2 Se 2 is evident in magneto-transport measurements, yielding a sign changing Hall resistivity at low temperatures. The magnetoresistance is non-saturating and follows Kohler’s scaling rule. We interpret the magneto-transport data in terms of open orbits that are revealed in the DFT calculated Fermi surface. de Haas-van Alphen (dHvA) oscillation measurements using torque magnetometry on single crystals yield four frequencies for out-of-plane fields: F α = (150 ± 26) T, F β = (293 ± 10) T, F γ = (375 ± 20) T and F η = (1017 ± 12) T, with the low frequency dominating the spectrum. Through the measurement of angular dependent dHvA oscillations and DFT calculations we identify the F α frequency with an approximately ellipsoidal electron pocket centered on the L 2 point of the Brillouin zone. Lifshitz-Kosevich analysis of the dHvA oscillations reveals a small cyclotron effective mass m* = (0.11 ± 0.02)m 0 and a nontrivial Berry phase for the dominant orbit. The presence of nontrivial topology in a bulk superconductor positions Pd 3 Bi 2 Se 2 as a potential candidate for exploring topological superconductivity.
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Magnetotransport, the response of electrical conduction to external magnetic field, acts as an important tool to reveal fundamental concepts behind exotic phenomena and plays a key role in enabling spintronic applications. Magnetotransport is generally sensitive to magnetic field orientations. In contrast, efficient and isotropic modulation of electronic transport, which is useful in technology applications such as omnidirectional sensing, is rarely seen, especially for pristine crystals. Here a strategy is proposed to realize extremely strong modulation of electron conduction by magnetic field which is independent of field direction. GdPS, a layered antiferromagnetic semiconductor with resistivity anisotropies, supports a field-driven insulator-to-metal transition with a paradoxically isotropic gigantic negative magnetoresistance insensitive to magnetic field orientations. This isotropic magnetoresistance originates from the combined effects of a near-zero spin–orbit coupling of Gd 3+ -based half-filling ƒ-electron system and the strong on-site f – d exchange coupling in Gd atoms. These results not only provide a novel material system with extraordinary magnetotransport that offers a missing block for antiferromagnet-based ultrafast and efficient spintronic devices, but also demonstrate the key ingredients for designing magnetic materials with desired transport properties for advanced functionalities.