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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Demonstration of Magnetron as an Alternative RF Source for SRF Accelerators

Magnetron has been considered as alternate high-efficiency, low-cost RF sources for linacs and storage rings [1] for national labs and industrial applications. After the demonstration of magnetrons power to drive and combine for a radio frequency cavity at 2450 MHz in CW mode, we have used trim coils adding to a water-cooled magnetron and amplitude modulation feedback to further suppress the side-band noise to -46.7 dBc level. We also demonstrated the phase-locking to an industrial grade cooking magnetron transmitter at 915 MHz with a 75 kW CW power delivered to a water load by using a -26.6 dBc injection signal [2]. The sideband noise from the 3-Phase SCRs DC power supply can be reduced to -16.2 dBc level. Further noise reduction and their power combining scheme using magic-tee and cavity type combiners for higher power application (2x75kW) are to be presented. We intent to use one power station to drive the normal conducting and superconducting RF cavities for the inductrial linac. We also going to demonstarte a vertical SRF cavity test with a high input coupling Q using a 2.45GHz magnetron and comparing with a baseline test result using a solid state amplifier.

Wang, H.↗
DOE OSTI2025

Grid-Assisted Direct-Current Magnetron Sputtering of Titanium: Plasma Discharge Diagnostics

Grid-assisted magnetron sputtering is attractive for the deposition of ultrathick Be coatings in inertial confinement fusion (ICF) applications because it offers improved control over the plasma. Here, we investigate the plasma discharge characteristics of grid-assisted direct current magnetron sputtering with Ti as a surrogate sputter target material instead of Be. We map the magnetic field of our magnetron source assembly, study the current-voltage characteristics of both the source and the substrate, and measure the energy distributions of ions bombarding the film surface during growth. The results reveal a slightly asymmetric magnetic field of the magnetron source array and strong dependencies of the plasma discharge characteristics on both the grid and the substrate voltages. Positive grid voltage increases both target and substrate currents, increases the plasma potential, and broadens the energy distributions of ions bombarding the substrate. Grid biasing effects on the plasma discharge characteristics and substrate current can be attributed to corresponding changes to the plasma potential, while substrate biasing effects are more complex and nonlinear. Furthermore, these results demonstrate that grid-assisted deposition offers additional flexibility in controlling the deposition process for tuning properties of ultrathick films for ICF applications.

ICF targets↗
DOE OSTI2020

A Novel Technique for Pulsed Operation of Magnetrons without Modulation of Cathode Voltage

Modern pulsed superconducting accelerators of megawatt beams require efficient RF sources controllable in phase and power. For each Superconducting RF (SRF) cavity is desirable a separate RF source with power up to hundreds of kW with pulse duration in the millisecond range. The efficiency of the traditional RF sources (klystrons, IOTs, solid-state amplifiers) is lower than that of the magnetrons, while the cost of a unit of RF power is much higher. Therefore the magnetron-based RF sources would significantly reduce the capital and operation costs in comparison with the traditional RF sources. A recently developed an innovative technique makes possible the pulsed generation of magnetrons powered below the self-excitation threshold voltage. This technique does not require pulse modulators to form RF pulses. The magnetron operation in this regime is stable, low noise, controllable in phase and power, and provides higher efficiency than other types of RF power sources. It allows operation in pulsed modes with large duty factor. The developed technique and its experimental verification are considered and discussed.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Fabrication of Nb3Sn by Magnetron Sputtering for Superconducting Radiofrequency Application

Particle accelerators are considered as an important device that has wide applications in cancer treatment, sterilizing waste, preserving foods, ion implantation in semiconductor industry, and in production of isotopes for medical applications. Superconducting radiofrequency (SRF) cavities are the building blocks of a linear particle accelerator. Current particle accelerators use niobium (Nb) superconductors as the sheet material to fabricate a single SRF cavity for particle acceleration. With better superconducting properties (critical temperature Tc ~ 18.3 K, superheating field Hsh~ 400 mT), Nb3Sn is considered a potential candidate in SRF technology. Magnetron sputtering is a promising deposition method to fabricate Nb3Sn thin films inside SRF cavities. Superconducting Nb3Sn films were fabricated on Nb and sapphire substrates by magnetron sputtering from a single stoichiometric Nb3Sn target, by multilayer sputtering of Nb and Sn followed by annealing, and by co-sputtering of Nb and Sn followed by annealing. The variation of morphological and superconducting properties was investigated for different substrate temperatures, annealing temperatures, annealing durations, and thicknesses. The film properties were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and energy dispersive X-ray spectroscopy (EDS). The films had crystalline Nb3Sn structure without any presence of poor superconducting Nb6Sn5 and NbSn2 phases. The highest Tc of the films fabricated from the stoichiometric target, multilayer sputtering and co-sputtering were 17.44, 17.93, and 17.66 K respectively. Finally, a cylindrical sputter coater with two identical magnetrons was designed and commissioned to fabricate Nb3Sn films inside a 2.6 GHz SRF cavity. The magnetrons were installed facing opposite to each other in a custom designed vacuum chamber and multilayers of Nb and Sn films on 1 cm2 Nb substrates replicating the beam tubes and equator locations of the cavity and the coated multilayered films were annealed at 950 °C for 3 h. The XRD of the as?deposited and annealed films confirmed the formation of Nb3Sn after the annealing. The dissertation discusses the fabrication process, characterized results of the fabricated films, the design of the cylindrical sputter coater and the preliminary data obtained from the sputter coater.

Sayeed, Md Nizam↗
DOE OSTI2022

Numerical simulation of a relativistic magnetron using a fluid electron model

An approach to numerically modeling relativistic magnetrons, in which the electrons are represented with a relativistic fluid, is described. A principal effect in the operation of a magnetron is space-charge-limited (SCL) emission of electrons from the cathode. We have developed an approximate SCL emission boundary condition for the fluid electron model. This boundary condition prescribes the flux of electrons as a function of the normal component of the electric field on the boundary. Here we show the results of a benchmarking activity that applies the fluid SCL boundary condition to the one-dimensional Child–Langmuir diode problem and a canonical two-dimensional diode problem. Simulation results for a two-dimensional A6 magnetron are then presented. Computed bunching of the electron cloud occurs and coincides with significant microwave power generation. Numerical convergence of the solution is considered. Sharp gradients in the solution quantities at the diocotron resonance, spanning an interval of three to four grid cells in the most well-resolved case, are present and likely affect convergence.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Magnetron sputter deposition of boron carbide in Ne and Ar plasmas

Conventional magnetron sputter deposition of B 4 C uses Ar as the working gas. In this report we explore the magnetron sputter deposition of B 4 C with a Ne plasma, which is expected to exhibit larger sputtering yields than Ar. We study properties of films deposited with different substrate tilt angles with the magnetron source operated in either direct-current (DC) or radio-frequency (RF) mode in an Ar or Ne plasma. Results show that the B 4 C film properties are determined by a combination of sputtering ballistics and effects of the working gas on the plasma discharge and gas phase scattering of depositing species flux. At constant discharge power, deposition rates for Ar and Ne plasmas are similar, which is attributed to balancing effects of a higher ballistic sputtering yield of Ne and lower ion flux to the target. Both depositing B and C neutral species and bombarding ions have higher energies for the case of Ne plasmas. Films deposited with the RF-driven Ne plasma exhibit a uniform non-columnar structure, lowest oxygen impurity content, and highest mass density and mechanical properties at a cost of Ne incorporation and larger compressive residual stress.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Effects of substrate bias and tilt on magnetron sputtered boron carbide films

Maintaining high density and good mechanical properties at oblique angles for magnetron sputtered amorphous boron carbide films remains a challenge. In this study, we investigate the effect of the substrate bias on density, residual stress, mechanical properties, and morphology of boron carbide films deposited via direct current magnetron sputtering with a full-face erosion magnetron source in a mixed Ar-Ne plasma. Results show that films deposited at oblique substrate tilt angles on substrates biased at -50 V possess significantly lower oxygen content, superior mechanical properties, and higher density compared to their electrically grounded counterparts. In conclusion, these enhancements observed at oblique angles, while promising, come at the cost of larger residual compressive stress and higher Ne incorporation in films.

Materials science↗
DOE OSTI2024

PROGRESS ON MAGNETRON R&DS FOR INDUSTRIAL PARTICLE ACCELERATORS

The magnetron as an efficient RF source for a compact industrial SRF accelerator has been developed. The per-formance of injection phase lock on two independent magnetron transmitters operated at 915MHz, in CW mode with maximum power of 75kW each has been demon-strated to satisfy this application. This industrial type magnetron has AC transformer and the SCR rectifier on the DC anode power supply. Output power spectrum with phase locking can achieve noise reduction of -21.2 dBc at the 1st 60 Hz, -28.0 dBc at 1st 180 Hz with only -22.6 dBc injection power. Further control studies for 2×75 kW, 915 MHz power combing by WR975 magic-tee at Jefferson Lab (JLab) and for 4×1.2 kW, 2.45 GHz power combing by WR340 magic-tee at General Atomics (GA).

Rimmer, R.↗
DOE OSTI2020

A 100 kW 1.3 GHz Magnetron System with Amplitude and Phase Control

Calabazas Creek Research, Inc., Fermilab, and Communications & Power Industries, LLC, developed a 100 kW peak, 10 kW average, 1.3 GHz, magnetron-based, RF system for driving accelerators. Efficiency varied between 81% and 87%. Phase locking uses a novel approach that provides fast amplitude and phase control when coupled into a superconducting accelerator cavity [1]. The system was successfully tested at Fermilab and produced 100 kW in 1.5 ms pulses at a repetition rate of 2 pps. A locking bandwidth of 0.9 MHz was achieved with a drive signal of 269 W injected through a 4 port circulator. The phase locking signal was 25 dB below the magnetron output power. The spectrum of the phase locked magnetron was suitable for driving accelerator cavities. Phase modulation was demonstrated to 50 kHz (the limit of the available driver source). The average power was limited by available conditioning time. Scaling indicates 42 kW of average power should be achievable. Estimated cost is less than $1/Watt of delivered RF power, exclusive of power supplies or modulators. System design and performance measurements will be presented.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Magnetron R&D Progress for High Efficiency CW RF Sources of Industrial Accelerators

After the demonstration of using high efficiency magnetron power to combine and aim to drive a radio frequency accelerator at 2450MHz in CW mode [1], we have used trim coils adding to a water-cooled magnetron and three amplitude modulation methods in an open-loop control to further suppress the 120Hz side-band noise to -46.7dBc level. We have also successfully demonstrated the phase-locking to an industrial grade cooking magnetron transmitter at 915MHz with a 75kW CW power delivered to a water load by using a -26.6dBc injection signal. The sideband noise at 360Hz from the 3-Phase SCRs DC power supply can be reduced to -16.2dBc level. Their power combing scheme and higher power application to industrial accelerators are foreseeing.

Wang, H.↗
DOE OSTI2020

Subcritical-voltage magnetron RF power source

A system and method of operating a magnetron power source can achieve a broad range of output power control by operating a magnetron with its cathode voltage lower than that needed for free running oscillations (e.g., below the Kapitsa critical voltage or equivalently below the Hartree voltage) A sufficiently strong injection-locking signal enables the output power to be coherently generated and to be controlled over a broad power range by small changes in the cathode voltage. In one embodiment, the present system and method is used for a practical, single, frequency-locked 2-magnetron system design.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2021

Effects of sample bias on adhesion of magnetron sputtered Cr coatings on SiC

Swelling of SiC at 300 C due to in-service neutron irradiation causes tensile residual stresses in coatings which are expected to adversely affect the performance of coated SiC composite fuel cladding for light water reactors. Matching the coating swelling with the substrate, a solution common for thermal expansion, is not practical in the case of neutron irradiation. Biasing samples during magnetron sputtering deposition induces compressive residual stress which may counteract this. In this study, chromium coatings were deposited on SiC by DC magnetron sputtering with no external heating at bias voltages of –50V, –75V, and –100V. The effects of the bias voltage on morphology, residual stress, microstrain, texture, and adhesion are shown. The low deposition temperature resulted in the coating microstructure evolution following an energetic particle bombardment dominated trend. Additionally, at the two lower bias voltages knock-on implantation dominated increasing the residual stress and microstrain while at the highest bias voltage, thermal spike migration allowed for defect relaxation. When the knock-on induced compressive residual stress exceeded 0.8 GPa microcrack formation in the SiC substrate decreased coating adhesion. While no microcracks formed at the lowest bias voltage, insufficient atomic mobility during coating growth lead to voids forming in the coating. A balance is needed to form void-free coatings that have high compressive residual stress.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Influence of oxygen on the optical and electrical properties of magnetron-sputtered indium tin oxide thin films at ambient temperature

Indium Tin Oxide (ITO) thin films are commonly used as transparent conductive layers in the production of solar cells. ITO films are typically heat-treated at temperatures exceeding 200 °C after magnetron sputtering to optimize the physical, optical, and electrical characteristics for photovoltaic devices. Here, this high temperature heating procedure greatly limits the use of potential substrates, particularly those comprised of low-temperature-rated polymers. Herein, we examine the physical, optical, and electrical transport effects of oxygen:argon plasmas during radio frequency magnetron sputtering of ITO on glass and flexible polymer surfaces without subsequent heat treatment. ITO thin films were characterized via sheet resistance testing, UV-Vis spectroscopy, X-ray diffraction, and scanning electron microscopy imaging. Sheet resistance measurements revealed an increase in surface resistance with increasing oxygen concentration during sputtering. UV-Vis optical transmittance measurements demonstrated an improvement in optical transmittance with an increase in oxygen concentration reaching a maximum transmittance at an oxygen concentration of 1-2 %. Most importantly, it was discovered that producing bilayers of ITO with pure argon sputtered plasmas followed by oxygen:argon plasmas produced ITO thin films with suitable resistance and transmittance without the need for high temperature post annealing. These results highlight a methodology for the deposition of ITO thin films on temperature sensitive substrates for flexible photovoltaics and low-cost module production.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Boron carbide films with reduced nodular defect density deposited by full-face erosion radio-frequency magnetron sputtering

Boron carbide coatings deposited by sputtering with conventional planar magnetrons exhibit nodular growth defects. Here, we demonstrate that the density of nodular defects in B 4 C films can be greatly reduced by using a full-face-erosion magnetron source that achieves a more uniform target erosion by sweeping the confining magnetic field over the target surface. Here, we systematically study properties of B 4 C films deposited on substrates with different tilt angles and demonstrate deposition of ultrathick films with compressive residual stress below 200MPa.

36 MATERIALS SCIENCE↗
DOE OSTI2025

High-rate magnetron sputter deposition of low-stress boron carbide films on tilted substrates

Boron carbide is attractive for several applications, including nuclear fuel capsules for inertial confinement fusion (ICF). The fabrication of ICF capsules involves the deposition of ultrathick coatings with density and thickness uniformity on submicron length scales on non-planar (spherical) substrates. Such a deposition requires control of the deposition rate, residual stress, and film microstructure. Here, we systematically study the direct-current magnetron sputter deposition of B 4 C coatings with a full-face-erosion magnetron source as a function of substrate tilt and Ar working gas pressure. Film properties are correlated with results of plasma diagnostics and predictions of Monte Carlo simulations of ballistic sputtering and gas-phase transport. The fabrication of low-stress amorphous B 4 C films with deposition rates of 7μm/h is demonstrated.

Kawasaki, K. [Lawrence Livermore National Laborato↗
DOE OSTI2021

Electron dynamics in radio frequency magnetron sputtering argon discharges with a dielectric target

Abstract We demonstrate a self-consistent and complete description of electron dynamics in a typical electropositive radio frequency magnetron sputtering (RFMS) argon discharge with a dielectric target. The electron dynamics, including the electron power absorption dynamics in one radio frequency (RF) period, is studied via a fully kinetic 2d3v particle-in-cell/Monte Carlo collision (PIC/MCC) electrostatic simulation. The interplay between the fundamental plasma parameters is analyzed through their spatiotemporal dynamics. Due to the influence of magnetic trap on the electron transport, a spatially dependent charging that perturbs the electric potential is observed on the dielectric target surface, resulting in a spatially dependent ion energy distribution along the target surface. The E × B drift-to-discharge current ratio is in approximate agreement with Bohm diffusion. The electron power absorption can be primarily decoupled into the positive Ohmic power absorption in the bulk plasma region and the negative pressure-induced power absorption near the target surface. Ohmic power absorption is the dominant electron power absorption mechanism, mostly contributed by the azimuthal electron current. The power absorption due to electron inertial effects is negligible on time-average. Both the maximum power absorption and dissipation of electrons appear in the bulk plasma region during the second half of the RF period, implying a strong electron trapping in magnetron discharges. The contribution of secondary electrons is negligible under typical RFMS discharge conditions.

Physics↗
DOE OSTI2023

Radio-frequency magnetron sputter deposition of ultrathick boron carbide films

The deposition of thick B 4 C films with low residual stress by conventional direct-current magnetron sputtering is accompanied by the formation of dust particulates contaminating the target, chamber, and substrates and leading to the formation of nodular defects in films. Here, we demonstrate that the formation of particulates is greatly reduced during radio-frequency magnetron sputtering (RFMS). We systematically study properties of B 4 C films deposited by RFMS with a substrate temperature of 330 °C, a target-to-substrate distance of 10 cm, Ar working gas pressure in the range of 4.5–12.0 mTorr (0.6–1.6 Pa), and substrate tilt angles of 0°–80°. All films are x-ray amorphous. A columnar structure develops with increasing either Ar pressure or substrate tilt. For columnar films, the column tilt angle decreases with increasing Ar pressure, which we attribute to a corresponding increase in the width of the distribution of impact angles of deposition flux. In contrast to the Keller–Simmons rule, the deposition rate increases with increasing Ar pressure, which suggests a better coupling of the RF energy to the plasma processes that lead to target sputtering at higher pressures. There is a critical substrate tilt angle above which the total residual stress is close to zero. This critical substrate tilt angle is ~0° for an Ar pressure of 12 mTorr (1.6 Pa). The lower residual stress state, necessary for depositing ultrathick films, is characterized by a larger concentration of nanoscale inhomogeneities and decreased mechanical properties. Based on these results, RFMS deposition of 60-μm-thick B 4 C films is demonstrated.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Lithium nitride coatings deposited by magnetron sputtering on sulfide electrolytes for solid-state batteries

Lithium nitrides have been considered as promising candidates for interfacial layers in solid-state lithium batteries (SSBs). Previously reported lithium nitride (Li 3 N) coatings were mostly prepared by the reaction between lithium metal and nitrogen gas, which makes it challenging for their thickness control and integration in SSBs. In this study, we prepare Li 3 N via magnetron sputtering for the first time, and apply the resulting coating directly on sulfide solid-state electrolyte. A much smaller impedance increase associated with improved cycling performance is observed in lithium metal symmetric cell. These results demonstrate the feasibility of depositing Li 3 N via magnetron sputtering and its application in SSBs.

25 ENERGY STORAGE↗