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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2017

Investigation of Carbon Fiber Architecture in Braided Composites Using X-Ray CT Inspection

During the fabrication of braided carbon fiber composite materials, process variations occur which affect the fiber architecture. Quantitative measurements of local and global fiber architecture variations are needed to determine the potential effect of process variations on mechanical properties of the cured composite. Although non-destructive inspection via X-ray CT imaging is a promising approach, difficulties in quantitative analysis of the data arise due to the similar densities of the material constituents. In an effort to gain more quantitative information about features related to fiber architecture, methods have been explored to improve the details that can be captured by X-ray CT imaging. Metal-coated fibers and thin veils are used as inserts to extract detailed information about fiber orientations and inter-ply behavior from X-ray CT images.

braided composites↗
NASA NTRS2007

Sources of and Remedies for Removing Unwanted Reflections in Millimeter Wave Images of Complex SOFI-Covered Space Shuttle Structures

In the recent years, continuous-wave near-field and lens-focused millimeter wave imaging systems have been effectively used to demonstrate their utility for producing high-resolution images of metallic structures covered with spay on foam insulation (SOFI) such as the Space Shuttle external fuel tank. However, for some specific structures a certain interference -pattern may be superimposed on the produced images. There are methods by which the influence of this unwanted interference can be reduced, such as the incorporation of an incidence .angle and the proper use of signal polarization. This paper presents the basics of this problem and describes the use of the methods for reducing this unwanted influence through specific examples.

Kharkovsky, S.↗
NASA NTRS2005

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 °C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices ((CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

Nikzad, Shouleh↗
NASA NTRS2005

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 (deg)C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices (CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

charged coupled devices (CCDs)↗
NASA NTRS1992

Thermographic imaging of cracks in thin metal sheets

The presence of cracks significantly decreases the structural integrity of thin metal sheets used in aerospace applications. Thermographic detection of surface temperature variations due to these cracks is possible after external heating. An approximate line source of heat is used to produce an inplane flow of heat in the sheet. A crack in the sheet perturbs the inplane flow of heat and can be seen in an image of the surface temperature of the sheet. An effective technique for locating these perturbations is presented which reduces the surface temperature image to an image of variations in the inplane heat flow. This technique is shown to greatly increase the detectability of the cracks. This thermographic method has advantages over other techniques in that it is able to remotely inspect a large area in a short period of time. The effectiveness of this technique depends on the shape, position and orientation of the heat source with respect to the cracks as well as the extent to which the crack perturbs the surface heat flow. The relationship between these parameters and the variation in the heat flow is determined both by experimental and computational techniques. Experimental data is presented for through-the-thickness, subsurface and surface EDM notches. Data for through-the-thickness fatigue cracks are also presented.

Cramer, K. E.↗
NASA NTRS1989

Digital image processing of nanometer-size metal particles on amorphous substrates

The task of differentiating very small metal aggregates supported on amorphous films from the phase contrast image features inherently stemming from the support is extremely difficult in the nanometer particle size range. Digital image processing was employed to overcome some of the ambiguities in evaluating such micrographs. It was demonstrated that such processing allowed positive particle detection and a limited degree of statistical size analysis even for micrographs where by bare eye examination the distribution between particles and erroneous substrate features would seem highly ambiguous. The smallest size class detected for Pd/C samples peaks at 0.8 nm. This size class was found in various samples prepared under different evaporation conditions and it is concluded that these particles consist of 'a magic number' of 13 atoms and have cubooctahedral or icosahedral crystal structure.

Soria, F.↗
NASA NTRS1973

Digital processing of radiographic images

Some techniques are presented and the software documentation for the digital enhancement of radiographs. Both image handling and image processing operations are considered. The image handling operations dealt with are: (1) conversion of format of data from packed to unpacked and vice versa; (2) automatic extraction of image data arrays; (3) transposition and 90 deg rotations of large data arrays; (4) translation of data arrays for registration; and (5) reduction of the dimensions of data arrays by integral factors. Both the frequency and the spatial domain approaches are presented for the design and implementation of the image processing operation. It is shown that spatial domain recursive implementation of filters is much faster than nonrecursive implementations using fast fourier transforms (FFT) for the cases of interest in this work. The recursive implementation of a class of matched filters for enhancing image signal to noise ratio is described. Test patterns are used to illustrate the filtering operations. The application of the techniques to radiographic images of metallic structures is demonstrated through several examples.

Bond, A. D.↗
NASA NTRS2000

Evanescent Microwave Probes Using Coplanar Waveguide and Stripline for Super-Resolution Imaging of Materials

An evanescent field microwave imaging probe based on half-wavelength, microwave transmission line resonators is described. Optimization of the probe tip design, the coupling gap, and the data analysis has resulted in images of metal lines on semiconductor substrates with 2.6 microns spatial resolution and a minimum detectable line width of 0.4 microns at 1 GHz.

Ponchak, G. E.↗
NASA NTRS2002

Biosensors for Real-Time Monitoring of Radiation-Induced Biologic Effects in Space

This proposal seeks to develop cellular biosensors based on dendritic polymers. Nanoscale polymer structures less than 20 nm in diameter will be used as the basis of the sensor/actuators. The structures will be designed to target into specific cells of an astronaut and be able to monitor health issues such as the exposure to radiation or infectious agents. Multiple components can be assembled on the polymers including target directors, analytical devices (such as molecular probes), magnetic particles and metals, and imaging agents. The design and assembly of these devices has been pioneered at the Center for Biologic Nanotechnology in the University of Michigan. These molecules would also be able to administer therapeutics in response to the needs of the astronaut, and act as actuators to remotely manipulate an astronaut as necessary to ensure their safety. The reporting will be accomplished either through fluorescence signal monitoring, with the use of multispectral analysis for signal interpretation, or through functional MRI. These nanosensors coupled to NEMS devices could facilitate the success and increase the safety of extended space flight.

Baker, James R., Jr.↗
NASA NTRS2011

CMOS Imager Has Better Cross-Talk and Full-Well Performance

A complementary metal oxide/semiconductor (CMOS) image detector now undergoing development is designed to exhibit less cross-talk and greater full-well capacity than do prior CMOS image detectors of the same type. Imagers of the type in question are designed to operate from low-voltage power supplies and are fabricated by processes that yield device features having dimensions in the deep submicron range. Because of the use of low supply potentials, maximum internal electric fields and depletion widths are correspondingly limited. In turn, these limitations are responsible for increases in cross-talk and decreases in charge-handling capacities. Moreover, for small pixels, lateral depletion cannot be extended. These adverse effects are even more accentuated in a back-illuminated CMOS imager, in which photogenerated charge carriers must travel across the entire thickness of the device. The figure shows a partial cross section of the structure in the device layer of the present developmental CMOS imager. (In a practical imager, the device layer would sit atop either a heavily doped silicon substrate or a thin silicon oxide layer on a silicon substrate, not shown here.) The imager chip is divided into two areas: area C, which contains readout circuits and other electronic circuits; and area I, which contains the imaging (photodetector and photogenerated-charge-collecting) pixel structures. Areas C and I are electrically isolated from each other by means of a trench filled with silicon oxide. The electrical isolation between areas C and I makes it possible to apply different supply potentials to these areas, thereby enabling optimization of the supply potential and associated design features for each area. More specifically, metal oxide semiconductor field-effect transistors (MOSFETs) that are typically included in CMOS imagers now reside in area C and can remain unchanged from established designs and operated at supply potentials prescribed for those designs, while the dopings and the lower supply potentials in area I can be tailored to optimize imager performance. In area I, the device layer includes an n+ -doped silicon layer on which is grown an n-doped silicon layer. A p-doped silicon layer is grown on top of the n -doped layer. The total imaging device thickness is the sum of the thickness of the n+, n, and p layers. A pixel photodiode is formed between a surface n+ implant, a p implant underneath it, the aforementioned p layer, and the n and n+ layers. Adjacent to the diode is a gate for transferring photogenerated charges out of the photodiode and into a floating diffusion formed by an implanted p+ layer on an implanted n-doped region. Metal contact pads are added to the back-side for providing back-side bias.

Pain, Bedabrata↗
NASA NTRS2005

A back-illuminated megapixel CMOS image sensor

In this paper, we present the test and characterization results for a back-illuminated megapixel CMOS imager. The imager pixel consists of a standard junction photodiode coupled to a three transistor-per-pixel switched source-follower readout [1]. The imager also consists of integrated timing and control and bias generation circuits, and provides analog output. The analog column-scan circuits were implemented in such a way that the imager could be configured to run in off-chip correlated double-sampling (CDS) mode. The imager was originally designed for normal front-illuminated operation, and was fabricated in a commercially available 0.5 pn triple-metal CMOS-imager compatible process. For backside illumination, the imager was thinned by etching away the substrate was etched away in a post-fabrication processing step.

Complementary Metal Oxide Semiconductor imager (CM↗
NASA NTRS2008

Vertical Isolation for Photodiodes in CMOS Imagers

In a proposed improvement in complementary metal oxide/semi conduct - or (CMOS) image detectors, two additional implants in each pixel would effect vertical isolation between the metal oxide/semiconductor field-effect transistors (MOSFETs) and the photodiode of the pixel. This improvement is expected to enable separate optimization of the designs of the photodiode and the MOSFETs so as to optimize their performances independently of each other. The purpose to be served by enabling this separate optimization is to eliminate or vastly reduce diffusion cross-talk, thereby increasing sensitivity, effective spatial resolution, and color fidelity while reducing noise.

Pain, Bedabrata↗
NASA NTRS2009

Improved Signal Chains for Readout of CMOS Imagers

An improved generic design has been devised for implementing signal chains involved in readout from complementary metal oxide/semiconductor (CMOS) image sensors and for other readout integrated circuits (ICs) that perform equivalent functions. The design applies to any such IC in which output signal charges from the pixels in a given row are transferred simultaneously into sampling capacitors at the bottoms of the columns, then voltages representing individual pixel charges are read out in sequence by sequentially turning on column-selecting field-effect transistors (FETs) in synchronism with source-follower- or operational-amplifier-based amplifier circuits. The improved design affords the best features of prior source-follower-and operational- amplifier-based designs while overcoming the major limitations of those designs. The limitations can be summarized as follows: a) For a source-follower-based signal chain, the ohmic voltage drop associated with DC bias current flowing through the column-selection FET causes unacceptable voltage offset, nonlinearity, and reduced small-signal gain. b) For an operational-amplifier-based signal chain, the required bias current and the output noise increase superlinearly with size of the pixel array because of a corresponding increase in the effective capacitance of the row bus used to couple the sampled column charges to the operational amplifier. The effect of the bus capacitance is to simultaneously slow down the readout circuit and increase noise through the Miller effect.

Pain, Bedabrata↗
NASA NTRS2008

Lower-Dark-Current, Higher-Blue-Response CMOS Imagers

Several improved designs for complementary metal oxide/semiconductor (CMOS) integrated-circuit image detectors have been developed, primarily to reduce dark currents (leakage currents) and secondarily to increase responses to blue light and increase signal-handling capacities, relative to those of prior CMOS imagers. The main conclusion that can be drawn from a study of the causes of dark currents in prior CMOS imagers is that dark currents could be reduced by relocating p/n junctions away from Si/SiO2 interfaces. In addition to reflecting this conclusion, the improved designs include several other features to counteract dark-current mechanisms and enhance performance.

Pain, Bedabrata↗
NASA NTRS1972

Investigation of the use of microwave image line integrated circuits for use in radiometers and other microwave devices in X-band and above

Program results are described in which the use of a/high permittivity rectangular dielectric image waveguide has been investigated for use in microwave and millimeter wavelength circuits. Launchers from rectangular metal waveguide to image waveguide are described. Theoretical and experimental evaluations of the radiation from curved image waveguides are given. Measurements of attenuation due to conductor and dielectric losses, adhesives, and gaps between the dielectric waveguide and the image plane are included. Various passive components are described and evaluations given. Investigations of various techniques for fabrication of image waveguide circuits using ceramic waveguides are also presented. Program results support the evaluation of the image line approach as an advantageous method for realizing low loss integrated electronic circuits for X-band and above.

Knox, R. M.↗
NASA NTRS1982

Ultraviolet images of M101 - Observations of dust and inferences on the metallicity

Since extreme Population I dominates three rocketborne telescope UV images of the Sc I galaxy NGC 5457, the delineation of the spiral structure is sharper than that of ground photographs. The UV pictures, in which the H II regions appear as reflection nebulae and illumine the nearby dust, reveal faint arms which, although correlated with the 21 cm H I radiograph, are only marginally detectable on deep visual photographs. The surface brightness of the arms is explainable in terms of UV light scattering off dust from hot stars and bright H II regions, in which case the dust would have extinction properties and a dust-to-gas ratio similar to that in the solar neighborhood and would in addition suggest that the NGC 5457 outer arm metal content is similar to that of the galaxy.

Stecher, T. P.↗
NASA NTRS2007

Increasing Linear Dynamic Range of a CMOS Image Sensor

A generic design and a corresponding operating sequence have been developed for increasing the linear-response dynamic range of a complementary metal oxide/semiconductor (CMOS) image sensor. The design provides for linear calibrated dual-gain pixels that operate at high gain at a low signal level and at low gain at a signal level above a preset threshold. Unlike most prior designs for increasing dynamic range of an image sensor, this design does not entail any increase in noise (including fixed-pattern noise), decrease in responsivity or linearity, or degradation of photometric calibration. The figure is a simplified schematic diagram showing the circuit of one pixel and pertinent parts of its column readout circuitry. The conventional part of the pixel circuit includes a photodiode having a small capacitance, CD. The unconventional part includes an additional larger capacitance, CL, that can be connected to the photodiode via a transfer gate controlled in part by a latch. In the high-gain mode, the signal labeled TSR in the figure is held low through the latch, which also helps to adapt the gain on a pixel-by-pixel basis. Light must be coupled to the pixel through a microlens or by back illumination in order to obtain a high effective fill factor; this is necessary to ensure high quantum efficiency, a loss of which would minimize the efficacy of the dynamic- range-enhancement scheme. Once the level of illumination of the pixel exceeds the threshold, TSR is turned on, causing the transfer gate to conduct, thereby adding CL to the pixel capacitance. The added capacitance reduces the conversion gain, and increases the pixel electron-handling capacity, thereby providing an extension of the dynamic range. By use of an array of comparators also at the bottom of the column, photocharge voltages on sampling capacitors in each column are compared with a reference voltage to determine whether it is necessary to switch from the high-gain to the low-gain mode. Depending upon the built-in offset in each pixel and in each comparator, the point at which the gain change occurs will be different, adding gain-dependent fixed pattern noise in each pixel. The offset, and hence the fixed pattern noise, is eliminated by sampling the pixel readout charge four times by use of four capacitors (instead of two such capacitors as in conventional design) connected to the bottom of the column via electronic switches SHS1, SHR1, SHS2, and SHR2, respectively, corresponding to high and low values of the signals TSR and RST. The samples are combined in an appropriate fashion to cancel offset-induced errors, and provide spurious-free imaging with extended dynamic range.

Pain, Bedabrata↗