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At least 37 records · Page 2

Atom-resolved imaging with a silicon tip integrated into an on-chip scanning tunneling microscope

Limited throughput is a shortcoming of the Scanning Tunneling Microscope (STM), particularly when used for atomically precise lithography. To address this issue, we have developed an on-chip STM based on Microelectromechanical-Systems (MEMS) technology. The device reported here has one degree of freedom, replacing the Z axis in a conventional STM. The small footprint of the on-chip STM provides a great opportunity to increase STM throughput by incorporating a number of on-chip STMs in an array to realize parallel STM. The tip methodology adopted for the on-chip STM presented here, which is a batch-fabricated Si tip, makes our design conducive to this goal. In this work, we investigate the capability of this on-chip STM with an integrated Si tip for STM imaging. We integrate the on-chip STM into a commercial ultrahigh-vacuum STM system and perform imaging with atomic resolution on par with conventional STMs but at higher scan speeds due to the higher sensitivity of the MEMS actuator relative to a piezotube. The results attest that it is possible to achieve a parallel and high-throughput STM platform, which is a fully batch-fabricated MEMS STM nanopositioner capable of performing atomic-resolution STM imaging.

Instruments & Instrumentation↗

Interferometric measurements of graphene-based membranes for micromechanical applications

Recent studies on piezoelectricity in 2D materials, such as graphene, have revealed their potential in multiple applications including microelectromechanical systems. Herein, we reveal piezoelectricity in few-layer graphene sheets deposited on amorphous Si 3 N 4 membranes. The response in the center of square membrane of 6.7 × 6.7 mm 2 size reaches about 14 nm at resonance and could be further enhanced by adjusting the composite structure. Resonance piezoelectric phenomena are fully consistent with the earlier piezoresponse force microscopy observations on free-standing piezoelectric graphene and open up a possibility of using 2D materials in micromechanical applications.

36 MATERIALS SCIENCE↗

Strain-tuning of domain walls in multilayer graphene probed in the quantum Hall regime

Domain walls, topological defects that define the frontier between regions of different stacking order in multilayer graphene, have proved to host exciting physics. The ability to tune these topological defects in situ in an electronic transport experiment brings a wealth of possibilities in terms of fundamental understanding of domain walls as well as for electronic applications. Here, we demonstrate, through a MEMS (microelectromechanical system) actuator and magnetoresistance measurements, the effect of domain walls in multilayer graphene quantum Hall effect. Reversible and controlled uniaxial strain triggers the topological defects, manifested as addtional quantum Hall effect plateaus as well as a discrete and reversible modulation of the current across the device. Furthermore, our findings are supported by theoretical calculations and constitute indication of the in situ tuning of topological defects in multilayer graphene probed through electronic transport, opening the way for the use of reversible topological defects in electronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Fabrication of Polymer Membrane-Suspended Microstructures on Printed Circuit Boards

When microelectromechanical systems are manufactured in high densities, the necessary routing layer structures can become complex and thus expensive if executed in silicon technology. If, additionally, the microstructures are also to be fabricated suspended on membranes, complex thinning processes become necessary to form these often rather fragile membranes. Here, a novel fabrication concept is demonstrated that allows for the fabrication of membrane-suspended microstructures using standard microfabrication techniques directly integrated with printed circuit boards (PCB) by laminating polyimide (PI) films over cavities in the PCB. This results in cost-effective routing layer fabrication and direct compatibility with common electronic component standards such as SMT (surface-mount technology) and THT (through-hole technology). To illustrate the capabilities of the fabrication process, we fabricated an array of membrane suspended microheaters. Individual platinum microheater elements are suspended on PI membranes that are 25 μm thick and 500 μm in diameter. The fabricated PCB carries a 10x10 array of suspended microheaters on an area of 26,mm x 26,mm. Here, the characterization of the microheater array shows that a yield of 86% functional microheaters was achieved. An individual microheater shows an almost linear heating characteristic at least up to 200°C demonstrating the viability of the technique for creating functional membrane-suspended microstructures on a PCB. [2021-0226]

47 OTHER INSTRUMENTATION↗

Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of materials that are capable of switching between low resistance and high resistance states. These emerging materials have been widely used in optical storage media and memory devices. Over the past recent years, there have been interests in exploiting the PCM and MIT materials, especially germanium antimony telluride (GST) alloys and vanadium dioxide (VO 2 ), for radio frequency (RF) applications. The PCM and MIT-based RF devices are expected to bridge the gap between semiconductor switches and microelectromechanical system (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. This article presents an overview of the PCM and MIT materials for RF circuits and discusses the recent advancements in reconfigurable millimeter-wave (mmWave) devices based on PCM and MIT materials in depth.

36 MATERIALS SCIENCE↗

Piezoelectric Actuation of Graphene-Coated Polar Structures

Ferroelectric materials based on lead zirconate titanate (PZT) are widely used as sensors and actuators because of their strong piezoelectric activity. However, their application is limited because of the high processing temperature, brittleness, lack of conformal deposition, and a limited possibility to be integrated with the microelectromechanical systems (MEMS). Recent studies on the piezoelectricity in the 2-D materials have demonstrated their potential in these applications, essentially due to their flexibility and integrability with the MEMS. In this work, we deposited a few layer graphene (FLG) on the amorphous oxidized Si 3 N 4 membranes and studied their piezoelectric response by sensitive laser interferometry and rigorous finite-element modeling (FEM) analysis. Modal analysis by FEM and comparison with the experimental results show that the driving force for the piezoelectric-like response can be a polar interface layer formed between the residual oxygen in Si 3 N 4 and the FLG. The response was about 14 nm/V at resonance and could be further enhanced by adjusting the geometry of the device. These phenomena are fully consistent with the earlier piezoresponse force microscopy (PFM) observations of the piezoelectricity of the graphene on SiO 2 and open up an avenue for using graphene-coated structures in the MEMS.

36 MATERIALS SCIENCE↗

Fabrication of ultrathin suspended membranes from atomic layer deposition films

In this report, ultrathin films suspended as freestanding membranes are critical to many microelectronic and materials science applications. However, fabrication methods are currently limited in either their flexibility, due to material selectivity issues during the final membrane release, or their scalability. Here, we demonstrate a novel fabrication process for suspending ultrathin films with thicknesses as low as 4 nm and lateral dimensions up to 20 x 1000 μm from a variety of materials grown by atomic layer deposition. A silicon nitride membrane serves as the support for a sacrificial polymer layer and an ultrathin atomic layer deposition film which, after plasma etching, will form the membrane. The high chemical selectivity between atomic layer deposition-grown transition metal nitrides and oxides and the sacrificial polymer means that ultrathin films of a variety of materials can be released without damage using a single process. Electrically conductive titanium nitride membranes can be produced by this method and are of significant interest for electron microscopy applications. Electron transparency of titanium nitride membranes was found to be ~14% higher than silicon nitride of the same thickness, and of similar conductivity to graphite, meaning that ultrathin, conductive, and electron transparent membranes can be fabricated at scale. These membranes are ideal supports for electron and photon characterization techniques, as well as microelectromechanical system applications that require a conductive membrane.

36 MATERIALS SCIENCE↗

Atomic-resolution lithography with an on-chip scanning tunneling microscope

In this work, atomic-resolution lithography with a Microelectromechanical-System (MEMS) based Scanning Tunneling Microscope (STM) is demonstrated for the first time. The microscope consists of a commercial UltraHigh-Vacuum (UHV) STM whose regular tip is replaced with a 1-Degree-of-Freedom (1-DOF) MEMS nanopositioner. This results in a hybrid STM system where XY-plane motions are provided by the piezotube of the original system and Z-axis motion by the MEMS with a higher bandwidth. Sharp tips made of Pt or W are added to the MEMS devices with postfabrication techniques. With this hybrid system, STM-based lithography is demonstrated on an H-passivated Si (100)-2×1 sample under UHV condition. Results prove the capability of the hybrid STM system for atomic-scale lithography. This capability, paired with the small footprint of the MEMS device, makes this approach a candidate for building a high-throughput parallel STM lithography platform by incorporating an array of 1-DOF MEMS devices that perform lithography in parallel.

Alipour, Afshin (ORCID:0000000263252067)↗

Zone plate-based extreme ultraviolet mask microscope with through-pellicle imaging capability

Mirror-based and zone plate-based imaging systems are being used in actinic extreme ultraviolet (EUV) reticle review tools. With regard to zone plates, a short working distance is advantageous in terms of the required spectral bandwidth, manufacturability, and potential throughput and imaging performance. Zone plates therefore typically have a short working distance. The industry has adopted the use of an EUV pellicle to protect the photomask. Imaging photomask through-pellicle requires a working distance larger than 2.5 mm. A zone-plate-based EUV mask microscope with a 3-mm working distance has been commissioned at beamline 11.3.2 of the Advanced Light Source. Through-pellicle imaging at an exposure time of 2 s is demonstrated. The instrument achieves an image contrast of 95% on large features on a photomask with a tantalum-based absorber. Imaging down to 45-nm half pitch (mask scale) is demonstrated. A NILS of 2.55 is achieved on 60-nm half-pitch (mask scale) lines and spaces. These results demonstrate that zone-plate-based imaging systems can meet the requirements of an actinic EUV mask review tool in terms of imaging performance and throughput in an instrument compatible with EUV pellicles.

Extreme ultraviolet↗

Optics-on-a-chip for ultrafast manipulation of 350-MHz hard x-ray pulses

Microelectromechanical systems (MEMS) are miniature devices integrated into a vast range of industrial and consumer applications. Optical MEMS are developed for dynamic spatiotemporal control in lightwave manipulation and communication as modulators, switches, multiplexers, spectrometer, etc. However, they have not been shown to function similarly in sub-nm wavelength regimes, namely, with hard x-rays, as high-brilliance pulsed x-rays have proven powerful for addressing challenges in time-domain science, from energy conversion to neurobiological control. While desirable temporal properties of x-ray pulses can be enhanced by optics, conventional x-ray optics are inherently massive in size, hence, never dynamic. We demonstrate highly ultrafast x-ray optics-on-a-chip based on MEMS capable of modulating hard x-ray pulses exceeding 350 MHz, 10 3 × higher than any other mechanical modulator, with a pulse purity >10 6 without compromising the spectral brilliance. Moreover, the timing characteristics of the devices can be tuned on-the-fly to deliver optimal pulse properties to create a host of dynamic x-ray instruments and applications, impossible with traditional optics of 10 9 × bulkier and more massive. The advent of the ultrafast optics-on-a-chip heralds a new paradigm of x-ray photonics, time-domain science, and accelerator diagnostics, especially at not only the future-generation light sources that offer coherent and high-frequency pulses but also lab-based facilities that normally do not offer timing structures.

42 ENGINEERING↗

Coaxial laser absorption and optical emission spectroscopy of high-pressure aluminum monoxide

This work advances laser absorption spectroscopy with measurements of aluminum monoxide (AlO) temperature and column density in extreme pressure ( P > 60 bar) and temperature ( T > 4000 K) environments. Measurements of the AlO A 2 Π i – X 2 Σ + transition are made using a microelectromechanical system, tunable vertical cavity surface emitting laser (MEMS-VCSEL). Simultaneous emission measurements of the AlO B 2 Σ + – X 2 Σ + transition are made along a line of sight that is coaxial with the laser absorption. Absorption temperature fits agree with emission spectra for a T = 3200 K, P = 9 bar case. In cases with T > 4000 K, P > 60 bar, absorption fits match the ambient temperature while emission fits over-estimate it, owing to high optical depths. These data juxtapose passive and active spectroscopic methods and demonstrate the versatility of AlO laser absorption in high-pressure and high-temperature environments where experimental data remain scarce, and engineering models will benefit from refined measurements.

Daniel, K. A.↗

Electrothermal Micromirror Adaptive Illumination

As part of the Cyclotron Road program, Helux Lighting aimed to develop a highly adaptive illumination source based on microelectromechanical system (MEMS) technology and next-generation solid state lighting. Solid state lighting has caused a paradigm shift in the industry. Developing systems that put light only where it is needed can reduce energy consumption and have an impact on the well-being of the population by eliminating glare and wasted light. Full control could also reduce the disruption of sensitive ecosystems caused by light pollution. The most advanced fixtures available today are based on mechanical components that are bulky and expensive. The track light is the only inexpensive lighting system that permits redirection and, in some cases, spot size by motorized optical components. The most advanced light fixtures today are composed of a strategically arranged array of LEDs. More recent developments in the research community include dynamic liquid crystal lenses but fail to realize simultaneous dynamic steering and spot size. In this project, Helux worked on the capability development of their controllable micromirror combined with state-of-the-art solid state lighting to electronically adjusting light position, brightness, and illumination area.

42 ENGINEERING↗

A MEMS Gyroscope for Reliable Long Duration Measurement While Drilling at 300°C

The 300°C Microelectromechanical system (MEMS) gyroscope project aims to contribute to DOE’s goal of increased geothermal drilling efficiency by 2025 through the development of a 300°C MEMS gyroscope for Measurement While Drilling (MWD). At the conclusion of the 2-year project, the team will develop a 300°C capable MEMS gyroscope containing GE’s patented Multi-Ring Gyroscope Transducer (MRGT) design, custom Silicon-On-Insulator (SOI) based frontend and feedback control electronics, and with demonstrated functionality and lifetime beyond 1000 hours. The project is divided into two budget periods with Go/No-Go decision at the end of the first budget period. The goal for the first budget period is to establish the feasibility of the MRGT and electronics design for meeting the 300°C performance requirements. The goal for the second budget period is to integrate the MRGT with the SOI-based application specific integrated circuit (ASIC) and demonstrate capability to operate at 300°C for 1000 hours. In Budget Period 1 we met the phase 1 goal. We successfully validated the combined MRG, electronics and packaging capability entitlement to achieving 0.5 degrees azimuth uncertainty while enabling operation at significantly higher temperatures than the state-of-the-art. In Budget Period 2, we successfully completed the integration of the MRGT and ASIC with associated high temperature, high reliability packaging to demonstrate the performance and functionality of the integrated gyroscope across the temperature range from room temperature to at 300°C. Furthermore, the team demonstrated operating life of >1,000 hours at 300°C, thus providing a validation of application-relevant lifetime capability.

15 GEOTHERMAL ENERGY↗

Investigating Hydrogen Isotope Exchange Reactions on Lithium Aluminate Pellets in TPBAR (FY22 Report)

We developed a novel operando Raman spectroscopy method for investigation of hydrogen (H) isotope exchange reactions in the lithium aluminate (γ-LiAlO 2 ) that allows modeling of tritium behaviors in high temperature and in an irradiated environment. The lithium aluminate pellet is a main component in the Tritium-Producing Burnable Absorber Rod (TPBAR). We used deuterium ( 2 H or D) as a surrogate to simulate tritium ( 3 H or T). We used a surface analysis tools in situ/operando Raman spectroscopy to observe the transformation OH and OD compositional changes. We also used ToF-SIMS to analyze the lithium aluminate pellet control sample to build the base line for future in situ/operando analysis. To conduct operando Raman spectroscopy, we developed a custom reaction cell with a detachable micro heater using microelectromechanical systems (MEMS) and 3D printing techniques. Multiple versions were developed and tested. Using the new reaction cell, we demonstrated operando Raman spectroscopy of water (H 2 O) and deuterated water (D 2 O) with nitrogen (N 2 ) exposure onto the lithium aluminate (LiAlO2) pellet specimen, respectively, using a wet gas injection setup. We also successfully developed a detachable microheater that can heat up to ~250°C for ~90 mins. The Raman spectra did not show clear H 2 O and D 2 O characteristic peaks, which indicates that introducing H 2 O and D 2 O onto the surface of the pellet is challenging due to its dense structure nature. Our efforts suggest that various improvements are needed, such as increasing reaction cell operating gas pressure and thinning pellet sample thickness, to obtain meaningful measurements.

07 ISOTOPE AND RADIATION SOURCES↗

Vertical and Lateral Etch Survey of Ferroelectric AlN/Al 1-x Sc x N in Aqueous KOH Solutions

Due to their favorable electromechanical properties, such as high sound velocity, low dielectric permittivity and high electromechanical coupling, Aluminum Nitride (AlN) and Aluminum Scandium Nitride (Al 1-x Sc x N) thin films have achieved widespread application in radio frequency (RF) acoustic devices. The resistance to etching at high scandium alloying, however, has inhibited the realization of devices able to exploit the highest electromechanical coupling coefficients. In this work, we investigated the vertical and lateral etch rates of sputtered AlN and Al 1-x Sc x N with Sc concentration x ranging from 0 to 0.42 in aqueous potassium hydroxide (KOH). Etch rates and the sidewall angles were reported at different temperatures and KOH concentrations. We found that the trends of the etch rate were unanimous: while the vertical etch rate decreases with increasing Sc alloying, the lateral etch rate exhibits a V-shaped transition with a minimum etch rate at x = 0.125. By performing an etch on an 800 nm thick Al 0.875 Sc 0.125 N film with 10 wt% KOH at 65 °C for 20 min, a vertical sidewall was formed by exploiting the ratio of the {$10\overline{11}$ planes and {$1\overline{1}00$ planes etch rates. This method does not require preliminary processing and is potentially beneficial for the fabrication of lamb wave resonators (LWRs) or other microelectromechanical systems (MEMS) structures, laser mirrors and Ultraviolet Light-Emitting Diodes (UV-LEDs). It was demonstrated that the sidewall angle tracks the trajectory that follows the {$\overline{1}2\overline{12}$ of the hexagonal crystal structure when different c/a ratios were considered for elevated Sc alloying levels, which may be used as a convenient tool for structure/composition analysis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Long-Term Thermal Aging of Modified Sylgard 184 Formulations

Primarily used as an encapsulant and soft adhesive, Sylgard 184 is an engineered, high-performance silicone polymer that has applications spanning microfluidics, microelectromechanical systems, mechanobiology, and protecting electronic and non-electronic devices and equipment. Despite its ubiquity, there are improvements to be considered, namely, decreasing its gel point at room temperature, understanding volatile gas products upon aging, and determining how material properties change over its lifespan. In this work, these aspects were investigated by incorporating well-defined compounds (the Ashby–Karstedt catalyst and tetrakis (dimethylsiloxy) silane) into Sylgard 184 to make modified formulations. As a result of these additions, the curing time at room temperature was accelerated, which allowed for Sylgard 184 to be useful within a much shorter time frame. Additionally, long-term thermal accelerated aging was performed on Sylgard 184 and its modifications in order to create predictive lifetime models for its volatile gas generation and material properties.

36 MATERIALS SCIENCE↗

The Application of Quaternions to Strap-Down MEMS Sensor Data

We describe the mathematical transformations required to convert the data recorded using typical 6-axis microelectromechanical systems (MEMS) sensor packages (3-axis rate gyroscopes and 3-axis accelerometers) when attached to an object undergoing a short duration loading event, such as blast loading, where inertial data alone are sufficient to track the object motion. By using the quaternion description, the complex object rotations and displacements that typically occur are translated into the more convenient earth frame of reference. An illustrative example is presented where a large and heavy object was thrown by the action of a very strong air blast in a complex manner. The data conversion process yielded an accurate animation of the object’s subsequent motion.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

In Situ High-Temperature Ultrafast Electron Diffraction through Integrated Furnace and MEMS Platforms

Temperature fundamentally governs phase stability, defect evolution, and transport behavior in materials. Despite its central role, direct measurements of structural evolution at elevated temperatures on ultrafast timescales have remained limited. Here, we report the design, integration, and validation of 2 complementary in situ heating platforms that substantially extend the thermal operating range of ultrafast electron diffraction (UED). A compact furnace-type heating stage enables stable diffraction measurements from room temperature to 800 K with ±0.1 K stability under ultrahigh vacuum, achieved through multi-sensor feedback control, dual air-cooling channels, and a thermally isolated motion stage. In parallel, a microelectromechanical system (MEMS)-based heating platform provides rapid thermal response and access to extreme temperatures ≥1,373 K with ±0.1 K stability over hundreds-micrometer regions while supporting simultaneous electrical biasing for electrothermal coupling studies. Absolute temperature calibration is established using diffraction-based thermometry via aluminum lattice expansion and independently validated through in situ melting of bismuth thin films. UED measurements further reveal pronounced temperature-dependent nonequilibrium lattice dynamics in bismuth, including modifications to electron–phonon coupling and Debye–Waller behavior, as well as enhanced ultrafast diffuse scattering in aluminum at elevated temperatures. Together, these developments establish a practical framework for quantitative, time-resolved studies of temperature-driven kinetics and nonequilibrium structural dynamics under extreme thermal environments.

Bai, Qianqian [Chinese Academy of Sciences (CAS), ↗