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Results for “monolayer graphene”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Remote surface optical phonon scattering in ferroelectric Ba 0.6 Sr 0.4 TiO 3 gated graphene

We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba 0.6 Sr 0.4 TiO 3 films, with field effect mobility up to 23 000 cm 2 V –1 s –1 achieved. Switching ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba 0.6 Sr 0.4 TiO 3 , from which we extract RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for by considering the scattering from the intrinsic longitudinal acoustic phonon and the RSO phonon, with the latter dominated by the mode at 35.8 meV. Furthermore, our study reveals the room temperature mobility limit of ferroelectric-gated graphene transistors imposed by RSO phonon scattering.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Elastic Screening of Pseudogauge Fields in Graphene

Lattice deformations in graphene couple to the low-energy electronic degrees of freedom as effective scalar and gauge fields. Using molecular dynamics simulations, we show that the optical component of the displacement field, i.e., the relative motion of different sublattices, contributes at equal order as the acoustic component and effectively screens the pseudogauge fields. In particular, we consider twisted bilayer graphene and corrugated monolayer graphene. In both cases, optical lattice displacements significantly reduce the overall magnitude of the pseudomagnetic fields. For corrugated graphene, optical contributions also reshape the pseudomagnetic field and significantly modify the electronic bands near charge neutrality. Previous studies based on continuum elasticity, which ignores this effect, have therefore systematically overestimated the strength of the strain-induced pseudomagnetic field. Furthermore, our results have important consequences for the interpretation of experiments and design of straintronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Ultrafast valley polarization of graphene nanorings

Here, we study theoretically electron dynamics of a graphene nanoring placed in the field of an ultrashort optical pulse. We describe the graphene nanoring within an effective model with infinite mass boundary conditions. For an optical pulse with a duration of just a few femtoseconds, the electron dynamics is coherent and is described by a time-dependent Schrödinger equation. If the optical pulse is circularly polarized, then two valleys of graphene are populated differently, resulting in a finite valley polarization of the system after the pulse. Such a valley polarization is a unique property of graphene nanoscale systems, while for a graphene monolayer, a circularly polarized pulse does not produce any valley polarization. The valley polarization of the graphene nanoring depends on parameters of the system, such as inner and outer radii. With the system's size increasing, the valley polarization monotonically decreases, converging to its zero value for the infinite graphene monolayer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Ultrathin Ruthenium Films on Graphene Buffered SiO 2 via Quasi Van der Waals Epitaxy

In this study, we demonstrate a quasi van der Waals epitaxy approach to prepare single crystalline Ru ultrathin film on large scale, monolayer graphene. Physical and epitaxial properties of bulk, near surface and surface of ultrathin Ru films were comprehensively studied using various structural, morphological, compositional, and electrical characterization techniques. Here, we confirm that Ru can epitaxially grow on single, monolayer graphene using magnetron sputtering at elevated temperature of 600 °C. The epitaxial Ru films with film thickness ranging from 94.2 nm down to 3.9 nm show the (0001) out-of-plane orientation. The epitaxial relationships between Ru and graphene are out-of-plane Ru(0001) || graphene(0001) and in-plane Ru[$11\bar20$] || graphene[$11\bar20$]. All the Ru films show smooth surfaces with root-mean-square roughness less than 0.8 nm and have negligible oxide layer on the surfaces. The Ru films on graphene demonstrate significantly reduced electrical resistivity comparing to their counterpart grown on bare SiO 2 , which show polycrystalline nature. For 7.1 to 3.9 nm film thicknesses, the resistivity of Ru on graphene shows 38 to 45% resistivity decrease from that of Ru film on bare SiO 2 without graphene. Our observations suggest the existence of the above-classical van der Waals interaction between Ru and graphene. On the other hand, graphene is capable of effectively blocking the inter-diffusion/interaction between Ru and SiO 2 during a 1000 °C annealing process.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Recyclable Graphene Sheets as a Growth Template for Crystalline ZnO Nanowires

Recent advances in nanoscience have opened ways of recycling substrates for nanomaterial growth. Novel materials, such as atomically thin materials, are highly desirable for the recycling substrates. In this work, we report recycling of monolayer graphene as a growth template for synthesis of single crystalline ZnO nanowires. Selective nucleation of ZnO nanowires on graphene was elucidated by scanning electron microscopy and density functional theory calculation. Growth and subsequent separation of ZnO nanowires was repeated up to seven times on the same monolayer graphene film. Raman analyses were also performed to investigate the quality of graphene structure along the recycling processes. The chemical robustness of graphene enables the repetitive ZnO nanowire growth without noticeable degradation of the graphene quality. This work presents a route for graphene as a multifunctional growth template for diverse nanomaterials such as nanocrystals, aligned nanowires, other two-dimensional materials, and semiconductor thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Imaging Quantum Interference in Stadium-Shaped Monolayer and Bilayer Graphene Quantum Dots

Experimental realizations of graphene-based stadium-shaped quantum dots (QDs) have been few and have been incompatible with scanned probe microscopy. Yet, the direct visualization of electronic states within these QDs is crucial for determining the existence of quantum chaos in these systems. Here we report the fabrication and characterization of electrostatically defined stadium-shaped QDs in heterostructure devices composed of monolayer graphene (MLG) and bilayer graphene (BLG). To realize a stadium-shaped QD, we utilized the tip of a scanning tunneling microscope to charge defects in a supporting hexagonal boron nitride flake. The stadium states visualized are consistent with tight-binding-based simulations but lack clear quantum chaos signatures. The absence of quantum chaos features in MLG-based stadium QDs is attributed to the leaky nature of the confinement potential due to Klein tunneling. In contrast, for BLG-based stadium QDs (which have stronger confinement) quantum chaos is precluded by the smooth confinement potential which reduces interference and mixing between states.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Encapsulation of Monolayer 2D Materials Using Kinetic Energy-Controlled Pulsed Laser Deposition

The integration of monolayer (ML) two-dimensional (2D) materials into next-generation microelectronics, optoelectronics, and sensors is hindered by their sensitivity to environmental exposure. Deposition of additional layers for encapsulation or growth on ML 2D materials by versatile but energetic plasma techniques such as pulsed laser deposition (PLD) has not been considered at the monolayer level because of potential damage caused by hyperthermal species with kinetic energies (KEs) exceeding the threshold displacement energy (TDE) of the ML. Here, we describe a general strategy to understand and mitigate damage during PLD by reducing the incident KE of ablated species below the TDE of the 2D monolayer using background gas collisions. Ion flux diagnostics, combined with in situ Raman spectroscopy of monolayer graphene during PLD of amorphous boron nitride (a-BN) as a dielectric encapsulation layer, show that damage is primarily correlated with fast ions that penetrate the background gas in accordance with Beer’s Law and are often overlooked in ICCD imaging due to the dominance of the bright, delayed plasma luminescence. Significantly, if fast ions are eliminated and a ∼2 nm-thick a-BN layer is “soft landed”, the monolayer graphene is effectively protected from damage by high KE species in the boron nitride plasma plume. Deposited a-BN films display a characteristic dielectric constant of 3.6 at 100 kHz and tunable charge injection properties. Our results enable PLD as a viable option for encapsulation and thin film growth onto ML 2D materials, with implications for both fundamental research and device integration.

2D materials↗
DOE OSTI2022

Cesium intercalation of graphene: A 2D protective layer on alkali antimonide photocathode

Alkali antimonide photocathodes have wide applications in free-electron lasers and electron cooling. The short lifetime of alkali antimonide photocathodes necessitates frequent replacement of the photocathodes during a beam operation. Furthermore, exposure to mediocre vacuum causes loss of photocathode quantum efficiency due to the chemical reaction with residual gas molecules. Theoretical analyses have shown that covering an alkali antimonide photocathode with a monolayer graphene or hexagonal boron nitride protects it in a coarse vacuum environment due to the inhibition of chemical reactions with residual gas molecules. Alkali antimonide photocathodes require an ultra-high vacuum environment, and depositing a monolayer 2D material on it poses a serious challenge. In the present work, we have incorporated a novel method known as intercalation, in which alkali atoms pass through the defects of a graphene thin film to create a photocathode material underneath. Initially, Sb was deposited on a Si substrate, and a monolayer graphene was transferred on top of the Sb film. Heat cleaning around 550–600 °C effectively removed the Sb oxides, leaving metallic Sb underneath the graphene layer. Depositing Cs on top of a monolayer graphene enabled the intercalation process. Atomic force microscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, low energy electron microscopy, and x-ray diffraction measurements were performed to evaluate photocathode formation underneath the monolayer graphene. Our analysis shows that Cs penetrated the graphene and reacted with Sb and formed Cs 3 Sb.

2D materials↗
DOE OSTI2023

Deep-Learning Electron Diffractive Imaging

Here, we report the development of deep-learning coherent electron diffractive imaging at subangstrom resolution using convolutional neural networks (CNNs) trained with only simulated data. We experimentally demonstrate this method by applying the trained CNNs to recover the phase images from electron diffraction patterns of twisted hexagonal boron nitride, monolayer graphene, and a gold nanoparticle with comparable quality to those reconstructed by a conventional ptychographic algorithm. Fourier ring correlation between the CNN and ptychographic images indicates the achievement of a resolution in the range of 0.70 and 0.55 Å. We further develop CNNs to recover the probe function from the experimental data. The ability to replace iterative algorithms with CNNs and perform real-time atomic imaging from coherent diffraction patterns is expected to find applications in the physical and biological sciences.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Selective-Area Remote Epitaxy of ZnO Microrods Using Multilayer–Monolayer-Patterned Graphene for Transferable and Flexible Device Fabrications

Here, selective-area remote epitaxy (SA-REpi) is demonstrated for fabricating mechanically releasable position-controlled ZnO microrod (MR) arrays from donor wafers in an arrayed form. Intaglio-patterned graphene, consisting of basal single-layer graphene (SLG) overlayered with multilayer graphene (MLG) patterned with perforated holes, is transferred onto a GaN/Al 2 O 3 wafer on which the hydrothermal synthesis is performed for growing ZnO MRs. The basal SLG area exposed through the MLG pattern yields ZnO MRs, whereas the MLG plateau inhibits the growth. The noncovalent remote epitaxial heterointerface enables the release of the MR overlayer in the arrayed form, and the original source wafer is refurbished for reproducibly repeating the SA-REpi. Density-functional theory calculations suggest that localized surface charge density is induced on the surface of SLG by the underlying GaN across ultrathin SLG, which possibly provides a driving force for precursor adatoms and the following remote epitaxy of ZnO. In contrast, the induction of the charge density redistribution does not clearly occur through MLG; so, that keeps the surface of MLG nearly charge-neutral. The diameter and spacing of ZnO MRs are controlled in a designed way by changing the pattern geometries. High-resolution scanning transmission electron microscopy reveals the remote heteroepitaxial relationship at an atomic level. The remote epitaxy is expected to provide an ideal platform to transfer the addressable spatial arrays of nano- or micro-architecture semiconductor components to arbitrary target surfaces directly after the growth without the assembly procedures.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Gate-tunable Veselago interference in a bipolar graphene microcavity

The relativistic charge carriers in monolayer graphene can be manipulated in manners akin to conventional optics. Klein tunneling and Veselago lensing have been previously demonstrated in ballistic graphene pn-junction devices, but collimation and focusing efficiency remains relatively low, preventing realization of advanced quantum devices and controlled quantum interference. Here, we present a graphene microcavity defined by carefully-engineered local strain and electrostatic fields. Electrons are manipulated to form an interference path inside the cavity at zero magnetic field via consecutive Veselago refractions. The observation of unique Veselago interference peaks via transport measurement and their magnetic field dependence agrees with the theoretical expectation. We further utilize Veselago interference to demonstrate localization of uncollimated electrons and thus improvement in collimation efficiency. Our work sheds new light on relativistic single-particle physics and provide a new device concept toward next-generation quantum devices based on manipulation of ballistic electron trajectory.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Network model for periodically strained graphene

The long-wavelength physics of monolayer graphene in the presence of periodic strain fields has a natural chiral scattering network description. When the strain field varies slowly compared to the graphene lattice and the effective magnetic length of the induced valley pseudomagnetic field, the low-energy physics can be understood in terms of valley-polarized percolating domain-wall modes. Inspired by a recent experiment, we consider a strain field with threefold rotation and mirror symmetries but without twofold rotation symmetry, resulting in a system with the connectivity of the oriented kagome network. Scattering processes in this network are captured by a symmetry-constrained phenomenological S matrix. Here, we analyze the phase diagram of the kagome network and show that the bulk physics of the strained graphene can be qualitatively captured by the network when we account for a percolation transition at charge neutrality. We also discuss the limitations of this approach to properly account for boundary physics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Nearly flat Chern band in periodically strained monolayer and bilayer graphene

The flat band is a key ingredient for the realization of interesting quantum states for functionalities. Here, in this paper, we investigate the conditions for the flat band in both monolayer and bilayer graphene under periodic strain. We find topological nearly flat bands with homogeneous distribution of Berry curvature in both systems. The quantum metric of the nearly flat band closely resembles that for Landau levels. For monolayer graphene, the strain field can be regarded as an effective gauge field, while for Bernal-stacked (AB-stacked) bilayer graphene, its role is beyond the description of a gauge field. We also provide an understanding of the origin of the nearly flat band in monolayer graphene in terms of the Jackiw-Rebbi model for Dirac fermions with sign-changing mass. In this paper, we suggest strained graphene as a promising platform for strongly correlated quantum states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Deterministic fabrication of graphene hexagonal boron nitride moiré superlattices

The electronic properties of moiré heterostructures depend sensitively on the relative orientation between layers of the stack. For example, near-magic-angle twisted bilayer graphene (TBG) commonly shows superconductivity, yet a TBG sample with one of the graphene layers rotationally aligned to a hexagonal Boron Nitride (hBN) cladding layer provided experimental observation of orbital ferromagnetism. To create samples with aligned graphene/hBN, researchers often align edges of exfoliated flakes that appear straight in optical micrographs. However, graphene or hBN can cleave along either zig-zag or armchair lattice directions, introducing a 30° ambiguity in the relative orientation of two flakes. By characterizing the crystal lattice orientation of exfoliated flakes prior to stacking using Raman and second-harmonic generation for graphene and hBN, respectively, we unambiguously align monolayer graphene to hBN at a near-0°, not 30°, relative twist angle. We confirm this alignment by torsional force microscopy of the graphene/hBN moiré on an open-face stack, and then by cryogenic transport measurements, after full encapsulation with a second, nonaligned hBN layer. This work demonstrates a key step toward systematically exploring the effects of the relative twist angle between dissimilar materials within moiré heterostructures.

boron nitride↗
DOE OSTI2021

Deep Learning Segmentation of Complex Features in Atomic-Resolution Phase-Contrast Transmission Electron Microscopy Images

Phase-contrast transmission electron microscopy (TEM) is a powerful tool for imaging the local atomic structure of materials. TEM has been used heavily in studies of defect structures of two-dimensional materials such as monolayer graphene due to its high dose efficiency. However, phase-contrast imaging can produce complex nonlinear contrast, even for weakly scattering samples. It is, therefore, difficult to develop fully automated analysis routines for phase-contrast TEM studies using conventional image processing tools. For automated analysis of large sample regions of graphene, one of the key problems is segmentation between the structure of interest and unwanted structures such as surface contaminant layers. In this study, we compare the performance of a conventional Bragg filtering method with a deep learning routine based on the U-Net architecture. We show that the deep learning method is more general, simpler to apply in practice, and produces more accurate and robust results than the conventional algorithm. We provide easily adaptable source code for all results in this paper and discuss potential applications for deep learning in fully automated TEM image analysis.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Your Clean Graphene is Still Not Clean

Researchers working with thin samples, such as monolayer graphene, are consistently struggling against contamination. Indeed, the problem of hydrocarbon contamination is known from the earliest days of electron microscopy and efforts to reduce this problem are ubiquitous to almost all high-vacuum experiments. Accurate knowledge of the behavior of such contamination is essential for electron beam (e-beam) based atomic fabrication, where it is aspired to select and control matter on an atom-by-atom basis. Here, the vexing question of hydrocarbon contamination on graphene is taken up. Image intensity is used to directly reveal the presence of diffusing hydrocarbons on ostensibly clean graphene. These diffusing hydrocarbons are previously inferred but not directly observed. Surprising dynamic variations of the concentration of these hydrocarbons impels questions about their origin. Here, some possible explanations are presented and some tentative conclusions are drawn. This work updates the conceptual model of “clean graphene” and offers refinements to the description of e-beam induced hydrocarbon deposition.

atomic fabrication↗
DOE OSTI2021

Thermodynamics of free and bound magnons in graphene

Symmetry-broken electronic phases support neutral collective excitations. For example, monolayer graphene in the quantum Hall regime hosts a nearly ideal ferromagnetic phase at specific filling factors that spontaneously breaks the spin-rotation symmetry. This ferromagnet has been shown to support spin-wave excitations known as magnons that can be electrically generated and detected. Although long-distance magnon propagation has been demonstrated via transport measurements, important thermodynamic properties of such magnon populations—including the magnon chemical potential and density—have not been measured. Here we present local measurements of electron compressibility under the influence of magnons, which reveal a reduction in the gap associated with the ν = 1 quantum Hall state by up to 20%. Combining these measurements with the estimates of temperature, our analysis reveals that the injected magnons bind to electrons and holes to form skyrmions, and it enables the extraction of free magnon density, magnon chemical potential and average skyrmion spin. Our methods provide a means of probing the thermodynamic properties of charge-neutral excitations that are applicable to other symmetry-broken electronic phases.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗