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Uniform size of Si nanowires (NWs) is highly desirable to enhance the performance of Si NW-based lithium-ion batteries.
In situ nucleation and growth measurements of Ag and Au on single-crystal PbSe thin films were made using a transmission electron microscope. Properties studied were polymorphism, crystalline perfection, and the stoichiometric composition of the initial and the autoepitaxially thickened PbSe substrates. The quantitative nucleation and cluster growth measurements were limited to low-saturation conditions. The epitaxial orientations are discussed, and evidence is presented as to the stage of deposition at which the epitaxial order for Ag is introduced. Strong substrate/overgrowth interaction manifested itself by alloying and interdiffusion.
The potential advantages of nucleation and growth control through temperature, rather than the addition of precipitants or removal of solvent, are discussed. A simple light scattering arrangement for the characterization of nucleation and growth conditions in solutions is described. The temperature dependence of the solubility of low ionic strength lysozyme solutions is applied in preliminary nucleation and growth experiments.
The nucleation and growth of cohesive tensile cracks are analyzed using a field-theoretic formulation in which the free energy is written as a functional of the crack separation (offset field). The present results indicate that, for certain materials, crack nucleation and growth proceed through the formation and extension of a diffuse 'halo' surrounding the classical portion of the crack. This is similar to nonclassical nucleation in magnetic systems. Theoretical considerations and numerical calculations strongly suggest that the diffuse halo can be identified with the fracture process zone seen in laboratory studies of advancing cracks.
A void coalescence term was proposed as an addition to the original void nucleation and growth (NAG) model to accurately describe void evolution under dynamic loading. The new model, termed as modified void nucleation and growth model (MNAG model), incorporated analytic equations to explicitly account for the evolution of the void number density and the void volume fraction (damage) during void nucleation, growth, as well as the coalescence stage. The parameters in the MNAG model were fitted to molecular dynamics (MD) shock data for single-crystal and nanocrystalline Ta, and the corresponding nucleation, growth, and coalescence rates were extracted. The results suggested that void nucleation, growth, and coalescence rates were dependent on the orientation as well as grain size. Compared to other models, such as NAG, Cocks–Ashby, Tepla, and Tonks, which were only able to reproduce early or later stage damage evolution, the MNAG model was able to reproduce all stages associated with nucleation, growth, and coalescence. The MNAG model could provide the basis for hydrodynamic simulations to improve the fidelity of the damage nucleation and evolution in 3-D microstructures.
Controlling the nucleation and growth of nanoparticles in low temperature plasma systems is imperative for controlling nanoparticle size distributions; and for some applications such as deposition and etching in microelectronic processing, preventing particle contamination. In this work, silicon nanoparticle (NP) production from silane is used as a model system to investigate the nucleation process. Although the mechanisms responsible for silicon NP nucleation and growth have been studied, it is unclear how controllable system parameters (e.g., pressure, system geometry, and gas composition) can be used to inhibit or promote NP formation. For example, the transport of reactive silane species is expected to significantly affect the feed fraction of silane required to nucleate silicon NP (the nucleation onset fraction) due to losses at the reactor walls. In this work, NP mass density was determined as a function of system pressure, gas composition, and reactor diameter for a tubular flow-through radiofrequency (RF) plasma using Ar/H2/He/SiH4 gas mixtures. A quartz crystal microbalance (QCM) impactor was developed to measure the total aerosol mass density downstream of the plasma and thereby identify the nucleation onset and its dependence on process parameters. Finally, a reaction mechanism was developed and incorporated into a global plasma chemistry model to better understand the nucleation onset and NP growth.
We report on atomic-scale analyses of nucleation and growth of Zr oxide precipitates and the microstructural evolution of internally oxidized Nb3Sn wires for high-field superconducting magnet applications, utilizing atom probe tomography (APT), transmission electron microscopy (TEM), and first-principles calculations. APT analyses reveal that oxygen and zirconium are already segregated at grain boundaries (GBs) in the unreacted Nb-1Zr-4Ta (at%) alloy prior to forming Nb3Sn through reacting the Nb alloy with Sn and SnO2. After forming Nb3Sn, Zr oxide precipitates nucleate both at the Nb3Sn/Nb heterophase interfaces and in the Nb3Sn grains, driven by the small solubilities of Zr and O in Nb3Sn compared to their value in Nb. A high number density (Nv) of Zr oxide nanoprecipitates is observed in the Nb3Sn layers, ∼10 23 m −3 , with a mean diameter <10 nm for a heat treatment at 625 °C. Quantitative APT and TEM analyses of the Zr oxide precipitates in the reacted Nb3Sn layers elucidate details of the nucleation, growth, and coarsening processes of the Zr oxide precipitates in Nb3Sn. First-principles calculations and classical nucleation theory are employed to study the nucleation of Zr oxide precipitates in Nb3Sn and to estimate the maximum energy barrier and critical radius for nucleation. Our research unveils the kinetic pathways for nucleation and growth of Zr oxide precipitates and the microstructural evolution of Nb3Sn layers, which helps to understand and improve the superconducting properties of internally oxidized Nb3Sn wires for use in high-field superconducting magnets. •We investigated the nucleation and growth of Zr oxide nanoprecipitates in Nb3Sn superconductors for magnet applications.•APT and TEM analyses reveals the nucleation and growth process of Zr oxide precipitates in Nb3Sn layers.•Classical nucleation theory with DFT is employed to describe the nucleation process of Zr oxide precipitates in Nb3Sn.•We find that the interfacial reactions at Nb/Nb3Sn interface play a critical role in the nucleation of Zr oxide precipitates.•Current study provides a pathway to improve the properties of internally oxidized Nb3Sn superconducting wires.
Ferroelectric polarization switching is one common example of a process that occurs via nucleation and growth, and understanding switching kinetics is crucial for applications such as ferroelectric memory. Here we describe and interpret anomalous switching dynamics in the wurtzite-structured nitride thin film ferroelectrics Al 0.7 Sc 0.3 N and Al 0.94 B 0.06 N using a general model that can be directly applied to other abrupt transitions that proceed via nucleation and growth. When substantial growth and impingement occur while nucleation rate is increasing, such as in these wurtzite-structured ferroelectrics under high electric fields, abrupt polarization reversal leads to very large Avrami coefficients ( e.g., n = 11), inspiring an extension of the KAI (Kolmogorov–Avrami–Ishibashi) model. We apply this extended model to two related but distinct scenarios that crossover between (typical) behavior described by sequential nucleation and growth and a more abrupt transition arising from significant growth prior to peak nucleation rate. This work therefore provides a more complete description of general nucleation and growth kinetics applicable to any system while specifically addressing the anomalously abrupt polarization reversal behavior in new wurtzite-structured ferroelectrics.
Our understanding of the process of mineral nucleation is starting to evolve from the solely thermodynamical aspects in classical nucleation theory toward a mechanistic study of reactions influenced by solvation structures of ions and their dynamics. A knowledge of how these atomic and molecular interactions respond to changing solution composition and/or the nature of an interface will form a fundamental foundation to understand rate-limiting reactions and processes for nucleation and growth. Here, we review recent advances from multidisciplinary experimental and computational approaches of the structure and dynamics of aqueous solutions and mineral–liquid interfaces that will influence rates of nucleation (and growth behavior) both homogeneously in aqueous solutions and heterogeneously at mineral–liquid interfaces. Furthermore, these processes include structure (and extent) of solute clustering, solvent degrees of freedom, and the presence of noninnocent charge-balancing ions, all of which can drive the selectivity and exert control over nucleation mechanisms. Similar controlling reactions can also occur at interfaces with the added complexities of how solute ions interact with and assemble on surface sites and use different mechanisms from bulk solutes, such as lateral solvent exchanges between distinct surface sites. To gain a predictive understanding of nucleation chemistry, we emphasize several key knowledge gaps that will need to be addressed in this field and highlight the importance of combining computations and experiments.
The nucleation and growth of CrSi2 on Si(111) by MBE and solid-phase epitaxy (SPE), was investigated using SEM and TEM observations of 2-mm-thick layers grown under a variety of conditions, including the use of a CoSi2 buffer. During growth, the wafers were monitored in situ using reflection high-energy electron diffraction. Island growth was observed, with islands found to nucleate with three epitaxial orientations. The morphology of CrSi2 islands was found to be affected by the degree and direction of substrate misorientation, the growth technique, and the use of CoSi2 buffer. However, the reconstruction of the Si surface does not appear to be an important factor in controlling SPE growth.
Formation mechanisms and nucleation processes are examined, and nucleation in the stratosphere is considered, taking into account binary nucleation, ternary nucleation, binary heterogeneous nucleation, and heteromolecular nucleation. Attention is also given to the growth of aerosol particles, nucleation and growth in models, and the role of aerosols in the upper atmosphere. It is pointed out that various sampling studies and numerical models have provided evidence that the in situ oxidation of sulfur-bearing gases is responsible for the sulfate mass of the stratospheric aerosol. Data obtained by Castleman et al. (1974) suggest that there is a common source of sulfur compounds for the stratosphere of both the northern and southern hemispheres.
Homogeneous nucleation, a textbook transition path for phase transitions, is typically understood on thermodynamic grounds through the prism of classical nucleation theory. However, recent studies have suggested the applicability of classical nucleation theory to systems far from equilibrium. Here, in this article, we formulate a purely mechanical perspective of homogeneous nucleation and growth, elucidating the criteria for the properties of a critical nucleus without appealing to equilibrium notions. Applying this theory to active fluids undergoing motility-induced phase separation, we find that nucleation proceeds in a qualitatively similar fashion to equilibrium systems, with concepts such as the Gibbs–Thomson effect and nucleation barriers remaining valid. We further demonstrate that the recovery of such concepts allows us to extend classical theories of nucleation rates and coarsening dynamics to active systems upon using the mechanically derived definitions of the nucleation barrier and surface tensions. Three distinct surface tensions—the mechanical, capillary, and Ostwald tensions—play a central role in our theory. While these three surface tensions are identical in equilibrium, our work highlights the distinctive role of each tension in the stability of active interfaces and the nucleation and growth of motility-induced phases.
The effects of cooling rate on acicular ferrite (AF) nucleation, growth, and inclusion characteristics in Ti-Zr deoxidation steel were studied by utilizing the high temperature confocal laser scanning microscope (HT-CLSM). The results indicated that with the increase of cooling rate, the ferrite start nucleation temperature decreased, and the difference of first nucleation temperature between AF and ferrite side plate (FSP) reduced. When the cooling rate increased to 10.0 °C/s, AF and FSP simultaneously nucleated at 564.5 °C. In addition, the AF actual growth rate rose with the increase of cooling rate and reached 30.13 µm/s at 10.0 °C/s cooling rate. The AF ratio in microstructure increased first and then decreased with the cooling rate increase and was up to the maximum 45.83 pct at 1.0 °C/s cooling rate. For inclusion characteristics, cooling rates had no obvious effect on inclusion types, but had a great influence on inclusions size distribution. With the cooling rate increase, the inclusion average diameter reduced, and diminished to 1.39 µm at 10.0 °C/s cooling rate. Finally, the AF nucleation on the Ti-Zr-Mn-O-S + TiN inclusion could be explained by the low lattice misfit between ferrite and TiN that precipitated on the Ti-Zr-Mn-O-S inclusion surface.
Nucleation of barite (BaSO 4 ) has broad implications in geological, environmental, and materials sciences. While impurity metals are common, our understanding of how they impact nucleation remains dim. In this work, we used classical optical microscopy compared to fast X-ray nanotomography (XnT) to investigate heterogeneous nucleation of barite on silica in situ with Sr 2+ as an impurity ion. The observed barite nucleation rates were consistent with classical nucleation theory (CNT), where barite crystals displayed a nonuniform size distribution, exhibiting distinct morphologies and incubation periods in Sr-free solutions. While undetectable with optical microscopy, nanotomography revealed that addition of Sr2+ enhances nucleation rates driven by the pre-factor in CNT, likely because both adsorbed Ba 2+ and Sr 2+ act as precursor sites on which nucleation occurs. Sr 2+ simultaneously inhibits growth, however, leading to a homogeneous distribution of smaller crystals. This finding will enable an improved predictive understanding of nucleation in natural and synthetic environments.
The crystallization kinetics of FK-800, a commercial semicrystalline copolymer of chlorotrifluoroethylene and vinylidene fluoride (poly(CTFE-co-VDF)), dictate its microstructure and functional performance. Crystallization occurs between the glass transition (T g ≈ 31 °C) and melting point (T m ≈ 110 °C), with grain boundaries playing a key role in applications such as memristors, where they regulate filament growth. This study integrates in situ atomic force microscopy (AFM), grazing-incidence wide-angle X-ray scattering (GIWAXS), and differential scanning calorimetry (DSC) to characterize nucleation, growth, and morphology across the full crystallization window. Hot-stage AFM reveals a transition from homogeneous to heterogeneous nucleation near 45 °C and a shift from reaction-limited to diffusion-limited growth above 60 °C. Kinetics are analyzed using Lauritzen–Hoffman, Turnbull–Fisher, and Avrami models to extract surface free energies and activation barriers. A multiscale modeling framework is developed in which nucleation densities and growth rates measured by AFM are used to reconstruct Avrami kinetics, which are then validated against coverage data, and extrapolated to predict bulk crystallization behavior observed by DSC. GIWAXS confirms a primarily flat-on chain orientation at all temperatures, linking orientation to domain morphology. This integrative approach quantitatively connects nanoscale crystallization dynamics with macroscopic phase evolution, establishing a quantitative framework for modeling crystallization across time, temperature, and length scales.
In condensed matter, the correlation length is an essential parameter which describes the distance over which a material maintains its structural properties. In liquid crystals, for the orientational order parameter this characteristic length is of the order of nanometers, while in solid crystals it can extend to macroscopic length scales. Here, we report the measurement of the correlation length, or persistence length, of the crystallographic orientation of blue phases (BPs)—chiral liquid crystals with long-range 3D-crystalline structures and submicron-sized lattice-parameters. These materials exhibit phase transformations that have been identified as the liquid analog of crystal-crystal martensitic transformations. In this work, we use liquid epitaxial growth to achieve spontaneous BP-crystal nucleation and subsequent growth. Specifically, we design patterned substrates made of a binary array of regions with different liquid crystal anchoring, which facilitate a uniform nucleation and growth of BP-crystals with (100)-lattice orientation and a simple cubic symmetry. Furthermore, our results indicate that this simple cubic BP, the so-called blue phase II (BPII), forms first on the patterned surface, thereby propagating the growth of domains in directions parallel or perpendicular to the patterned regions. These results are used to understand the emergence of a surface anchoring assisted BPII-correlation length, taken as the distance over which the BP preserves its lattice orientation, as a function of time and pattern characteristics. We found that BPII single crystals can be achieved on patterned regions whose lateral dimensions are equal to or larger than 10 μm, consistent with our measurements of the BPII-correlation length. This newly acquired understanding of the role of surfaces on the formation of BPs is then used to design processes that permit formation of macroscopically large mono-domain, single-crystal BPs by relying on significantly reduced patterned areas (only part of the area is patterned), a feature that could benefit the applications of this intriguing class of materials.
The nucleation and growth of diamond crystals on single-crystal copper surfaces implanted with carbon ions is studied. Microwave plasma-enhanced chemical-vapor deposition is used for diamond growth. The single-crystal copper substrates were implanted either at room or elevated temperature with carbon ions prior to diamond nucleation. This procedure leads to the formation of a graphite film on the copper surface which greatly enhances diamond crystallite nucleation. A simple lattice model is constructed for diamond growth on graphite as 111 line (diamond) parallel to 0001 line (graphite) and 110 line (diamond) parallel to 1 1 -2 0 (graphite).
Reverse magnetization spike domains analyzed for nucleation and growth