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DOE OSTI2021

Resolving buried optoelectronic features in metal halide perovskites via modulation spectroscopy studies

As research on both bulk and low dimensional metal halide perovskites (MHPs) continues to grow, the tools necessary to gain insights into their exotic and highly convoluted optoelectronic features must also expand. Electroabsorption (EA) is a modulation spectroscopy technique that is exceptionally valuable at deconvoluting overlapping spectral features as well as discerning between different electronic environments in semiconductors. This review outlines the critical shortcomings of traditional optical spectroscopy in determining essential properties such as the bandgap and exciton binding energy. In this report we provide a brief overview of the working principles of EA, focusing on the differences between bound and unbound charge carriers that result in unique behavior when interacting with an applied electric field. We discuss key studies highlighting the unique characterization available when coupling EA spectroscopy with traditional steady-state optical tools to investigate interesting and complex optical features in MHPs. We conclude that EA is a crucial tool for pushing the boundaries of our understanding of the optoelectronic properties of MHP thin films. When other optical characterization methods fall short in the richness of data provided, EA can bridge the knowledge gap to provide a complete optoelectronic characterization of novel MHPs and deepen the understanding of current structures and compositions as a function of their structural and morphological dimensionality.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

DOE OSTI2026

Thin Film Synthesis of SrZn2P2 with SrI2 Post-Annealing for Enhanced Crystallinity and Optoelectronic Quality

Ternary Zintl phosphides are promising light-absorbing semiconductors for thin-film optoelectronic applications, but strategies for controlling their microstructure and optoelectronic quality remain underexplored. Here, we report the synthesis of phase-pure SrZn2P2 thin films using radio-frequency co-sputtering in a PH3 + Ar atmosphere and investigate the impact of post-growth processing on their structural and optical properties. Grazing-incidence X-ray scattering and Raman spectroscopy confirm the formation of crystalline SrZn2P2 films over a finite compositional window. Optical measurements reveal clear absorption near the direct-band-gap energy (~1.8 eV) and near-band-edge photoluminescence. Further, we have studied the effects of chemically compatible halide-assisted annealing. It is found that SrI2 treatments lead to pronounced grain growth and reduced diffraction peak broadening while preserving phase purity, in contrast to rapid thermal or forming-gas annealing. Notably, annealing with SrI2 at 450 degrees C significantly enhances both the intensity and spatial uniformity of the photoluminescence, thus connecting the observed microstructural consolidation with improved radiative recombination. Our study demonstrates that halide-assisted annealing provides an effective pathway for microstructural control in SrZn2P2 thin films and highlights a generalizable processing strategy for advancing Zintl phosphide semiconductors toward optoelectronic applications.

14 SOLAR ENERGY↗

DOE OSTI2023

Moiré photonics and optoelectronics

Moiré superlattices, the artificial quantum materials, have provided a wide range of possibilities for the exploration of completely new physics and device architectures. In this Review, we focus on the recent progress on emerging moiré photonics and optoelectronics, including but not limited to moiré excitons, trions, and polaritons; resonantly hybridized excitons; reconstructed collective excitations; strong mid- and far-infrared photoresponses; terahertz single-photon detection; and symmetry-breaking optoelectronics. We also discuss the future opportunities and research directions in this field, such as developing advanced techniques to probe the emergent photonics and optoelectronics in an individual moiré supercell; exploring new ferroelectric, magnetic, and multiferroic moiré systems; and using external degrees of freedom to engineer moiré properties for exciting physics and potential technological innovations.

Science & Technology - Other Topics↗

DOE OSTI2021

Silicon Nanosheets as Candidates for Silicon-Based Optoelectronics

The growth in computational ability over the past decades has positively impacted global development, the economy, healthcare, and science. As on-chip components are approaching the atomic scale, alternative paradigms are needed to address the thermal and electronic issues that impose bottlenecks for computing. One approach to address this is with optoelectronics. However, silicon—the backbone of microelectronics—is a poor choice due to its indirect bandgap, while existing optoelectronic materials are incompatible with CMOS infrastructure. Monolayer silicon nanosheets (SiNSs) are an intriguing material that exhibit photoluminescence, and are compositionally-compatible with the CMOS process. Here, we synthesize and characterize monolayer SiNSs, and show spectroscopic evidence that they exhibit a quasi-direct bandgap, which is corroborated by DFT calculations. We probe their thermal stability, demonstrating their structure and photoluminescence are stable beyond the required operating temperatures for computing applications. These optoelectronic properties, CMOS-compatibility, and stability make SiNSs a viable candidate for silicon-based photonics.

Ryan, Bradley↗

NASA NTRS1987

Optoelectronic Docking System

Sensors and computers control approach and coupling. Proposed optoelectronic system with no moving parts automatically controls approach of two spacecraft as they closed from distance of about 1 km to within few cm. System concept modified for use on Earth in robotic assembly, to control docking of large ships, or to guide placement of large structural components. Optoelectronic docking system automatically controls approach of active vehicle or mechanism to passive vehicle or object. Maneuvers of approaching vehicle controlled in response to optoelectronically sensed relative position of approached vehicle.

Ward, S. M.↗

NASA NTRS1992

GaAs Optoelectronic Integrated-Circuit Neurons

Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

Lin, Steven H.↗

NASA NTRS1993

Single event test methodology for integrated optoelectronics

A single event upset (SEU), defined as a transient or glitch on the output of a device, and its applicability to integrated optoelectronics are discussed in the context of spacecraft design and the need for more than a bit error rate viewpoint for testing and analysis. A methodology for testing integrated optoelectronic receivers and transmitters for SEUs is presented, focusing on the actual test requirements and system schemes needed for integrated optoelectronic devices. Two main causes of single event effects in the space environment, including protons and galactic cosmic rays, are considered along with ground test facilities for simulating the space environment.

Label, Kenneth A.↗

NASA NTRS2008

Web-Enabled Optoelectronic Particle-Fallout Monitor

A Web-enabled optoelectronic particle- fallout monitor has been developed as a prototype of future such instruments that (l) would be installed in multiple locations for which assurance of cleanliness is required and (2) could be interrogated and controlled in nearly real time by multiple remote users. Like prior particle-fallout monitors, this instrument provides a measure of particles that accumulate on a surface as an indication of the quantity of airborne particulate contaminants. The design of this instrument reflects requirements to: Reduce the cost and complexity of its optoelectronic sensory subsystem relative to those of prior optoelectronic particle fallout monitors while maintaining or improving capabilities; Use existing network and office computers for distributed display and control; Derive electric power for the instrument from a computer network, a wall outlet, or a battery; Provide for Web-based retrieval and analysis of measurement data and of a file containing such ancillary data as a log of command attempts at remote units; and Use the User Datagram Protocol (UDP) for maximum performance and minimal network overhead.

Lineberger, Lewis P.↗

NASA NTRS2009

Simple Optoelectronic Feedback in Microwave Oscillators

A proposed method of stabilizing microwave and millimeter-wave oscillators calls for the use of feedback in optoelectronic delay lines characterized by high values of the resonance quality factor (Q). The method would extend the applicability of optoelectronic feedback beyond the previously reported class of optoelectronic oscillators that comprise two-port electronic amplifiers in closed loops with high-Q feedback circuits.

Maleki, Lute↗

NASA NTRS2011

Single-sided lateral-field and phototransistor-based optoelectronic tweezers

Described herein are single-sided lateral-field optoelectronic tweezers (LOET) devices which use photosensitive electrode arrays to create optically-induced dielectrophoretic forces in an electric field that is parallel to the plane of the device. In addition, phototransistor-based optoelectronic tweezers (PhOET) devices are described that allow for optoelectronic tweezers (OET) operation in high-conductivity physiological buffer and cell culture media.

Ohta, Aaron↗

DOE OSTI2022

Topological Materials for Functional Optoelectronic Devices

The recent realization of topology as a mathematical concept in condensed matter systems has shattered Landau's widely accepted classification of phases by spontaneous symmetry breaking as he famously said, “a particular symmetry property exists or does not exist.” Topological materials (TMs) such as topological insulators and topological semimetals, are characterized by properties that depend on the topology of the band structure. Such dependence has drastic implications on the optical, electrical, and thermal properties of the material. Fundamental physics of TMs is currently under active research in condensed matter, materials science, and high energy physics. Here, recent advances in exploiting the unique properties of TMs to realize functional optoelectronic devices are surveyed. Current and future applications that are, or may be, enabled by their unique properties are discussed. Although many theoretical ideas have been proposed over the past decade or so on using TMs in optoelectronic applications, the focus will be on experimentally realized devices.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Fabrication methods for high reflectance dielectric-metal point contact rear mirror for optoelectronic devices

The patterned dielectric back contact (PDBC) structure can be used to form a point-contact architecture that features a dielectric spacer with spatially distributed, reduced-area metal point contacts between the semiconductor back not recognized contact layer and the metal back contact. In this structure, the dielectric-metal region provides higher reflectance and is electrically insulating. Reduced-area metal point contacts provide electrical conduction for the back contact but typically have lower reflectance. The fabrication methods discussed in this article were developed for thermophotovoltaic cells, but they apply to any III-V optoelectronic device requiring the use of a conductive and highly reflective back contact. Patterned dielectric back contacts may be used for enhanced sub-bandgap reflectance, for enhanced photon recycling near the bandgap energy, or both depending on the optoelectronic application. The following fabrication methods are discussed in the article: PDBC fabrication procedures for spin-on dielectrics and commonly evaporated dielectrics to form the spacer layer; methods to selectively etch a parasitically absorbing back contact layer using metal point contacts as an etch mask; methods incorporating a dielectric etch through different process techniques such as reactive ion and wet etching.

14 SOLAR ENERGY↗

DOE OSTI2025

One-Step Transfer of Symmetric and Asymmetric Contacts for Large-Scale 2D Electronics and Optoelectronics

Two-dimensional (2D) semiconductors are highly promising candidates for thin-film transistor applications due to their scalability, transferability, atomic thickness, and relatively high carrier mobility. However, a substantial performance gap remains between individual devices based on single-crystalline 2D films and wafer-scale integrated circuits, primarily due to defects introduced during conventional fabrication processes. Here, we report a diamond-assisted electrode transfer technique for the van der Waals integration of wafer-scale prefabricated electrode arrays onto 2D materials, enabling scalable electronics and optoelectronics. Implemented on metal–organic chemical vapor deposition-grown monolayer molybdenum disulfide, this method forms ultraclean metal–semiconductor interfaces, yielding field-effect transistors with excellent ohmic contacts, a low contact resistance of 400 Ω·μm, and a Schottky barrier height of only 9 meV. Furthermore, we demonstrate a scalable transistor array on monolayer molybdenum disulfide with excellent device performance uniformity, achieving an average field-effect mobility of 30 cm 2 V –1 s –1 and an on/off current ratio exceeding 105. Additionally, high photocurrent and responsivity were demonstrated in the array devices, showing their potential for excellent image detection. We further demonstrate the versatility of this technique by fabricating a Schottky diode array through a single-step transfer of asymmetric electrodes─low work function aluminum and high work function gold─onto monolayer tungsten diselenide. This approach provides a clean, effective solution for contact engineering in 2D materials, offering a viable pathway toward wafer-scale, high-performance 2D electronics, optoelectronics, and integrated circuits.

2D electronics↗

DOE OSTI2020

Inorganic Halide Double Perovskites with Optoelectronic Properties Modulated by Sublattice Mixing

All-inorganic halide double perovskites have emerged as a promising class of materials that are potentially more stable and less toxic than lead-containing hybrid organic-inorganic perovskite optoelectronic materials. In this work, 311 cesium chloride double perovskites (Cs 2 BB'Cl 6 ) were selected from a set of 903 compounds as likely being stable on the basis of a statistically learned tolerance factor (t) for perovskite stability. First-principles calculations on these 311 double perovskites were then performed to assess their stability and identify candidates with band gaps appropriate for optoelectronic applications. We predict that 261 of the 311 Cs 2 BB'Cl 6 compounds are likely synthesizable on the basis of a thermodynamic analysis of their decomposition to competing compounds (decomposition enthalpy <0.05 eV/atom). Of these 261 likely synthesizable compounds, 47 contain no toxic elements and have direct or nearly direct (within 100 meV) band gaps between 1 and 3 eV, as computed with hybrid density functional theory (HSE06). Within this set, we identify the triple-alkali perovskites Cs 2 [Alk] + [TM] 3+ Cl 6 , where Alk is a group 1 alkali cation and TM is a transition-metal cation, as a class of Cs 2 BB'Cl 6 double perovskites with remarkable optical properties, including large and tunable exciton binding energies as computed by the GW-Bethe-Salpeter equation (GW-BSE) method. We attribute the unusual electronic structure of these compounds to the mixing of the Alk-Cl and TM-Cl sublattices, leading to materials with small band gaps, large exciton binding energies, and absorption spectra that are strongly influenced by the identity of the transition metal. The role of the double-perovskite structure in enabling these unique properties is probed through an analysis of the electronic structures and chemical bonding of these compounds in comparison with other transition-metal and alkali transition-metal halides.

14 SOLAR ENERGY↗

NASA NTRS2006

Radiation Effects on Optoelectronic Devices in Space Missions

Radiation degradation of optoelectronic devices is discussed, including effects on optical emitters, detectors and optocouplers. The importance of displacement damage is emphasized, including the limitations of non-ionizing energy loss (NIEL) in normalizing damage. Failures of optoelectronics in fielded space systems are discussed, along with testing and qualification methods.

optoelectronics↗

DOE OSTI2024

Multicolor Inks of Black Phosphorus for Midwave‐Infrared Optoelectronics

Abstract Black phosphorus (bP) based ink with a bulk bandgap of 0.33 eV ( λ = 3.7 µm) has recently been shown to be promising for large‐area, high performance mid‐wave infrared (MWIR) optoelectronics. However, the development of multicolor bP inks expanding across the MWIR wavelength range has been challenging. Here a multicolor ink process based on bP with spectral emission tuned from 0.28 eV ( λ = 4.4 µm) to 0.8 eV ( λ = 1.5 µm) is demonstrated. Specifically, through the reduction of bP particle size distribution (i.e., lateral dimension and thickness), the optical bandgap systematically blueshifts, reaching up to 0.8 eV. Conversely, alloying bP with arsenic (bP 1− x As x ) induces a redshift in the bandgap to 0.28 eV. The ink processed films are passivated with an infrared‐transparent epoxy for stable infrared emission in ambient air. Utilizing these multicolor bP‐based inks as an infrared light source, a gas sensing system is demonstrated that selectively detects gases, such as CO 2 and CH 4 whose absorption band varies around 4.3 and 3.3 µm, respectively. The presented ink formulation sets the stage for the advancement of multiplex MWIR optoelectronics, including spectrometers and spectral imaging using a low‐cost material processing platform.

Kim, Jae Ik↗

DOE OSTI2024

3D‐Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device

Abstract Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide‐bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically‐active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin‐electric field coupling to measure electronic phenomena. In this work, charge‐state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen‐vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. Optical control is used to change the charge state of background impurities inside the diamond on‐demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. Conducting channels that control carrier flow, key steps toward optically reconfigurable, wide‐bandgap optoelectronics are then engineered using light. This work might be extended to probe other wide‐bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic and quantum technologies.

Wood, Alexander A.↗

DOE OSTI2021

Optically Induced Static Magnetization in Metal Halide Perovskite for Spin‐Related Optoelectronics

Abstract Understanding the feasibility to couple semiconducting and magnetic properties in metal halide perovskites through interface design opens new opportunities for creating the next generation spin‐related optoelectronics. In this work, a fundamentally new phenomenon of optically induced magnetization achieved by coupling photoexcited orbital magnetic dipoles with magnetic spins at perovskite/ferromagnetic interface is discovered. The depth‐sensitive polarized neutron reflectometry combined with in situ photoexcitation setup, constitutes key evidence of this novel effect. It is demonstrated that a circularly polarized photoexcitation induces a stable magnetization signal within the depth up to 7.5 nm into the surface of high‐quality perovskite (MAPbBr 3 ) film underneath a ferromagnetic cobalt layer at room temperature. In contrast, a linearly polarized light does not induce any detectable magnetization in the MAPbBr 3 . The observation reveals that photoexcited orbital magnetic dipoles at the surface of perovskite are coupled with the spins of the ferromagnetic atoms at the interface, leading to an optically induced magnetization within the perovskite’s surface. The finding demonstrates that perovskite semiconductor can be bridged with magnetism through optically controllable method at room temperature in this heterojunction design. This provides the new concept of utilizing spin and orbital degrees of freedom in new‐generation spin‐related optoelectronic devices.

36 MATERIALS SCIENCE↗