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NASA NTRS1994

Status of diffused junction p+n InP solar cells for space applications

Recently, we have succeeded in fabricating diffused junction p(sup +)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3 percent. The maximum AMO, 25 C internal losses due to date on bare cells is, however, only 13.2 percent. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(sup +)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: (1) the formation on thin p(sup +) InP:Cd emitter layers, (2) electroplated front contacts, (3) surface passivation and (4) the design of a new native oxide/Al2O3/MgF2 tree layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

Faur, Mircea↗

NASA NTRS1994

Status of Diffused Junction p(+)n InP Solar Cells for Space Applications

Recently, we have succeeded in fabricating diffused junction p(+)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3%. The maximum AMO, 25 C efficiency recorded to date on bare cells is, however, only 13.2%. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(+)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: 1) the formation of thin p(+) InP:Cd emitter layers, 2) electroplated front contacts, 3) surface passivation and 4) the design of a new native oxide/AI203/MgF2 three layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

Faur, Mircea↗

NASA NTRS2008

Optical Coating Performance and Thermal Structure Design for Heat Reflectors of JWST Electronic Control Unit

The James Webb Space Telescope (JWST) consists of an infrared-optimized Optical Telescope Element (OTE) that is cooled down to 40 degrees Kelvin. A second adjacent component to the OTE is the Integrated Science Instrument Module, or ISIM. This module includes the electronic compartment, which provides the mounting surfaces and ambient thermally controlled environment for the instrument control electronics. Dissipating the 200 watts generated from the ISIM structure away from the OTE is of paramount importance so that the spacecraft's own heat does not interfere with the infrared light detected from distant cosmic sources. This technical challenge is overcome by a thermal subsystem unit that provides passive cooling to the ISIM control electronics. The proposed design of this thermal radiator consists of a lightweight structure made out of composite materials and low-emittance metal coatings. In this paper, we will present characterizations of the coating emittance, bidirectional reflectance, and mechanical structure design that will affect the performance of this passive cooling system.

Quijada, Manuel A.↗

NASA NTRS1998

Development of Tailorable Electrically Conductive Thermal Control Material Systems

Deshpande, M. S.↗

NASA NTRS1997

Development of Tailorable Electrically Conductive Thermal Control Material Systems

The optical characteristics of surfaces on spacecraft are fundamental parameters in controlling its temperature. Passive thermal control coatings with designed solar absorptance and infrared emittance properties have been developed and have been in use for some time. In this total space environment, the coating must be stable and maintain its desired optical properties as well as mechanical properties for the course of the mission lifetime. The mission lifetimes are increasing and in our quest to save weight, newer substrates are being integrated which limit electrical grounding schemes. All of this has added to already existing concerns about spacecraft charging and related spacecraft failures or operational failures. The concern is even greater for thermal control surfaces that are very large. One way of alleviating such concerns is to design new thermal control material systems (TCMS) that can help to mitigate charging via providing charge leakage paths. The objective of this program was to develop two types of passive electrically conductive TCMS. The first was a highly absorbing/emitting black surface and the second was a low (alpha(sub s)/epsilon(sub N)) type white surface. The surface resistance goals for the black absorber was 10(exp 4) to 10(exp 9) Omega/square, and for the white surfaces it was 10(exp 6) to 10(exp 10) Omega/square. Several material system concepts were suggested and evaluated for space environment stability and electrical performance characterization. Our efforts in designing and evaluating these material systems have resulted in several developments. New concepts, pigments and binders have been developed to provide new engineering quality TCMS. Some of these have already found application on space hardware, some are waiting to be recognized by thermal designers, and some require further detailed studies to become state-of-the-art for future space hardware and space structures. Our studies on baseline state-of-the-art materials and conductive concepts have resulted in several important findings that are of interest to all thermal designers and systems integrators.

Deshpande, M. S.↗

NASA NTRS1995

Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen-passivated HE InP cell results will also be presented.

Chatterjee, B.↗

NASA NTRSDate not supplied

VO 2 -based Thermochromic Variable Emittance Coating

As NASA’s Artemis program requirements become increasingly challenging for thermal control, novel passive thermal control solutions are needed to enable lunar surface and lunar transit operations. A thermochromic coating which changes its heat rejection with temperature could eliminate the need for dual loop thermal control architecture in human spacecraft and could reduce or eliminate the need for survival heaters in robotic spacecraft. The variable heat rejection is accomplished by incorporating a vanadium dioxide (VO 2 ) layer into a multilayer coating stack up. Intrinsically, VO 2 changes from an insulator to a metal at 68 °C, so a tungsten dopant is introduced to reduce the transition temperature to room temperature or below. This project is focused on developing a process for doping the VO 2 to achieve the desired transition temperature

Sydney Taylor↗

NASA NTRS2005

High Power SiGe X-Band (8-10 GHz) Heterojunction Bipolar Transistors and Amplifiers

Limited by increased parasitics and thermal effects as the device size becomes large, current commercial SiGe power HBTs are difficult to operate at X-band (8-12 GHz) with adequate power added efficiencies at high power levels. We found that, by changing the heterostructure and doping profile of SiGe HBTs, their power gain can be significantly improved without resorting to substantial lateral scaling. Furthermore, employing a common-base configuration with proper doping profile instead of a common-emitter configuration improves the power gain characteristics of SiGe HBTs, which thus permits these devices to be efficiently operated at X-band. In this paper, we report the results of SiGe power HBTs and MMIC power amplifiers operating at 8-10 GHz. At 10 GHz, 22.5 dBm (178 mW) RF output power with concurrent gain of 7.32 dB is measured at the peak power-added efficiency of 20.0% and the maximum RF output power of 24.0 dBm (250 mW) is achieved from a 20 emitter finger SiGe power HBT. Demonstration of single-stage X-band medium-power linear MMIC power amplifier is also realized at 8 GHz. Employing a 10-emitter finger SiGe HBT and on-chip input and output matching passive components, a linear gain of 9.7 dB, a maximum output power of 23.4 dBm and peak power added efficiency of 16% is achieved from the power amplifier. The MMIC exhibits very low distortion with third order intermodulation (IM) suppression C/I of -13 dBc at output power of 21.2 dBm and over 20dBm third order output intercept point (OIP3).

Ma, Zhenqiang↗

NASA NTRSDate not supplied

Variable Emittance Coatings

Variable emittance coatings (VECs) can reduce thermal control system mass and power by passively changing radiator heat rejection according to spacecraft and environment heat loads. VECs make establishing a lunar presence easier since this technology helps overcome challenges with harsh thermal environments on the lunar surface and in transit. This CIF focuses on creating testing capabilities to assess VECs from collaborators in academia and industry. Two main testing capabilities were created. First, a set of temperature dependent Fourier Transform Infrared Spectroscopy (FTIR) measurement accessories were designed, fabricated, and used to measure samples received from collaborators. These accessories are capable of measuring the transmittance and reflectance of semi transparent and opaque samples. Second, a vacuum calorimetry experiment was designed and built to assess the variable heat rejection of larger coupons.

Sydney Taylor↗

NASA NTRS1995

Design of a three-layer antireflection coating for high efficiency indium phosphide solar cells using a chemical oxide as first layer

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 mu m of the surface of the illuminated cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3-layer AR coating for thermally diffused p+n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p+ emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as an efficient antireflective layer yielding a measured record high AMO open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3 and MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductors materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating should work well for all III-V compound-based solar cells.

Moulot, Jacques↗

NASA NTRS1995

Design of a Three-Layer Antireflection Coating for High Efficiency Indium Phosphide Solar Cells Using a Chemical Oxide as First Layer

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 microns of the illuminated surface of the cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with the p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally, a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown, thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3- layer AR coating for thermally diffused p(+)n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p(+) emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as a fairly efficient antireflective layer yielding a measured record high AM0, 25 C, open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3, MgF2 or ZnS, MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductor materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating, should work well for essentially all III-V compound-based solar cells.

Moulot, Jacques↗

NASA NTRS1993

A tri-state optical switch for local area network communications

This novel structure is a heterojunction phototransistor which can be used as an emitter-detector, and when placed in a quiescent mode, the device becomes a passive transmitter. By varying the voltage bias, this novel device will switch between all three modes of operation. Such a device has broad application in network environments with operation speeds of less than 50 MHz and distances of less than 1 km, e.g. automobiles, airplanes, and intra-instrumentation. During this period, the emission mode for this device was studied and mathematically modeled.

Simms, Garfield↗

NASA NTRS1982

Radiation damage and annealing in large area n+/p/p+ GaAs shallow homojunction solar cells

Annealing of radiation damage was observed for the first time in VPE-grown, 2- by 2-cm, n+/p/p+ GaAs shallow homojunction solar cells. Electrical performance of several cells was determined as a function of 1-MeV electron fluence in the range of 10 to the 13th power to 10 to the 15th power e-/sq cm and as a function of thermal annealing time at various temperatures. Degradation of normalized power output after a fluence of 10 to the 15th power 1-MeV electrons/sq cm ranged from a low of 24 to 31 percent of initial maximum power. Normalized short circuit current degradation was limited to the range from 10 to 19 percent of preirradiated values. Thermal annealing was carried out in a flowing nitrogen gas ambient, with annealing temperatures spanning the range from 125 to 200 C. Substantial recovery of short circuit current was observed at temperatures as low as 175 C. In one case improvement by as much as 10 percent of the postirradiated value was observed. The key features of these cells are their extremely thin emitter layers (approxmately 0.05 micrometers), the absence of any Al sub xGd sub 1-x As passivating window layer, and their fabrication by vapor phase epitaxy.

Flood, D. J.↗

NASA NTRS1999

Shuttle and Transfer Orbit Thermal Analysis and Testing of the Chandra X-Ray Observatory Charge-Couple Device Imaging Spectrometer Radiator Shades

Thermal analyses of the Shuttle and Transfer Orbit of the Advanced X-Ray Astrophysics Facility Charge-Coupled Device (CCD) Imaging Spectrometer (ACIS), one of two science instruments on the Chandra X-Ray Observatory, revealed a low-earth orbit (LEO) overheating problem on the goldized Kapton faces of two radiator shades. The shades were coated with the goldized Kapton to provide a low hemispherical emittance to minimize direct and backloaded heating from the sun and the observatory and high specularity to optimize the coupling to space on two passive radiators which cool the focal plane to -120 C +/- 1 C during on-orbit operations. Since the observatory has a highly elliptical final orbit of 10,000 kilometers by 140,000 kilometers and the ACIS radiators and shades are oriented anti-sun, the high solar absorptance to emittance ratio of the goldized Kapton was not an issue. However, during Shuttle bay-to-earth operations, the short duration solar heating occurring near the eclipse entry and exit resulted in shade temperatures in excess of the cure temperature of the adhesive used to bond the goldized Kapton and honeycomb face-sheets. The detailed thermal analysis demonstrating the LEO overheating as well as the redesign options and thermal testing of a redesigned development unit shade are presented.

Sharp, John R.↗

NASA NTRS1987

The effect of internal stresses on solar cell efficiency

Diffusion induced stresses in silicon are shown to result in large localized changes in the minority carrier mobility which in turn have a significant effect on cell output. Evidence is given that both compressive and tensile stresses can be generated in either the emitter or the base region. Tensile stresses appear to be much more effective in altering cell performance. While most stress related effects appear to degrade cell efficiency, this is not always the case. Evidence is presented showing that arsenic induced stresses can result in emitter characteristics comparable to those found in the MINP cell without requiring a high degree of surface passivation.

Weizer, Victor G.↗

NASA NTRS1987

Piezoresistance and solar cell efficiency

Diffusion-induced stresses in silicon are shown to result in large localized changes in the minority-carrier mobility which in turn can have a significant effect on cell output. Evidence is given that both compressive and tensile stresses can be generated in either the emitter or the base region. Tensile stresses in the base appear to be much more effective in altering cell performance than do compressive stresses. While most stress-related effects appear to degrade cell efficiency, this is not always the case. Evidence is presented showing that arsenic-induced stresses can result in emitter characteristics comparable to those found in the MINP cell without requiring a high degree of surface passivation.

Weizer, Victor G.↗

NASA NTRS1986

Analysis of cirrus from airborne lidar and radiometer observations

Lidar and passive radiance sensing data on cirrus clouds gathered in instrumented high altitude aircraft flights are analyzed, with emphasis on cirrus emittance characteristics. The data were collected with a U-2 aircraft flying at about 19 km altitude. Lidar data defined the vertical structure of the cloud which, when combined with independent atmospheric temperature data, permitted radiance to be derived from thermal radiance data. Sample return lidar images are provided of cirrus and cirrostratus clouds, along with the calculated emittance data.

Spinhirne, J. D.↗

NASA NTRS1984

Advanced passive radiator for spaceborne cryogenic cooling

A novel design to improve the cooling capability of spaceborne cryogenic passive radiators is described. The design is based on the use of lightweight angled radiation shields, low-conductance structural supports, and a separate detachable launch-support system to reduce the parasitic heat leaks from the warm spacecraft to the cold radiator. The effectiveness of this design is demonstrated by thermal-vacuum-chamber experiments which indicate that the angled-radiation-shield assembly has an effective emittance that is an order of magnitude lower than that of the best multilayer insulation used in flight. Performance predictions based on the experiments and analytical model indicate that an advanced passive-radiator design based on this technology would be between 10 and 57% of the size and 10 and 36% of the mass of the best state-of-the-art passive radiators and would make lower temperatures (< 60 K) and larger heat loads practical. The cooling requirements of many new spaceborne instruments could be accommodated by application of this new passive-radiator design.

Steven Bard↗