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Lattice vibration theory of solid state diffusion for Cu including anharmonic effects formulated using equilibrium statistical mechanics, considering interacting phonon events
The anharmonic properties of low and high frequency E2 modes of ZnO and Co doped ZnO were investigated using Raman scattering spectroscopy. We have determined the behavior of frequency, linewidths, and lifetime of E2 modes in the temperature range from 80 to 800 K. In the case of E2(high) mode the frequency shift towards the lower energy side was analyzed in light of the theory of anharmonic phonon-phonon interaction and thermal expansion of the lattice, and the linewidth behavior was analyzed in terms of anharmonic effect of three-phonon decay mechanism. But in the case of E2(low), the linewidth and frequency behaved practically harmonic with respect to temperature and independent of Co substitutions. It is found that the E2(high) phonon anharmonicity is higher for ZnCoO alloys than in pure ZnO and it increases with the compositional disorder. The low temperature lifetime of E2 phonon in ZnO, 1 % and 3% Co doped ZnO were found to be 1.S2, 1.74, and 1.54 ps, respectively.
Photon-phonon interaction in gallium arsenide alloy single crystal studied by infrared reflection and transmission spectroscopy
The High T(sub c) oxides are highly polarizable materials and are charge transfer insulators. The charge transfer polarization wave formalism is developed in these oxides. The dispersion relationships due to long range dipole-dipole interaction of a charge transfer dipole lattice are obtained in 3-D and 2-D. These are high frequency bosons and their coupling with carriers is weak and antiadiabatic in nature. As a result, the mass renormalization of the carriers is negligible in complete contrast to conventional electron-phonon interaction, that give polarons and bipolarons. Both bound and superconducting pairing is discussed for a model Hamiltonian valid in the antiadiabatic regime, both in 3-D and 2-D. The stability of the charge transfer dipole lattice has interesting consequences that are discussed.
Electron-phonon interaction superconductivity in transition metals
Studies and experiments to determine time dependency of plasma density, high frequency electron-phonon interactions in magnetic fields, and operation of stuffed-cusp plasma facility
Recombination luminescence of irradiated silicon, and hole-optical phonon interaction in degenerate silicon
Ultrasonic attenuation temperature dependence in aluminum oxide explained by three phonon interaction
Polaron coupling approximation applied to electron-longitudinal optical phonon interaction on spheroidal energy band surface of strontium titanate
Polarons large to nearly small transitions, studying ground state mass dependence on bare electron mass, electron-phonon interactions model, superconducting strontium titanate, etc
Evaluation of experimental data concerning the normal spectral absorptivities of the transition metals, nickel, iron, platinum, and chromium, at both room and liquid-helium temperatures in the wavelength range from 2.5 to 50 microns. The absorptivities were derived from reflectivity measurements made relative to a room-temperature vapor-deposited gold reference mirror. The absorptivity of the gold reference mirror was measured calorimetrically, by use of infrared laser sources. Investigation of various methods of sample-surface preparation resulted in the choice of a vacuum-annealing process as the final stage. The experimental results are discussed on the basis of the anomalous-skin-effect theory modified for multiple conduction bands. As predicted, the results approach a single-band model toward the longer wavelengths. Agreement between theory and experiment is considerably improved by taking into account the modification of the relaxation time due to the photon-electron-phonon interaction proposed by Holstein (1954) and Gurzhi (1958); but, particularly at helium temperatures, the calculated curve is consistently below the experimental results.
We have found what we believe to be a universal characteristic of layered superconductors: a positive curvature of the Hc2-versus-Tc boundary. The origins of the effect are believed to be associated with strong anisotropies of the Fermi surface and electron-phonon interaction.
Extended measurements and theory on the recently developed monolithic wavelength demultiplexer consisting of voltage-tunable superlattice p-i-n photodetectors in a waveguide configuration are discussed. It is shown that the device is able to demultiplex and detect two optical signals with a wavelength separation of 20 nm directly into different electrical channels at a data rate of 1 Gb/s and with a crosstalk attenuation varying between 20 and 28 dB, depending on the polarization. The minimum acceptable crosstalk attenuation at a data rate of 100 Mb/s is determined to be 10 dB. The feasibility of using the device as a polarization angle sensor for linearly polarized light is also demonstrated. A theory for the emission of photogenerated carriers out of the quantum wells is included, since this is potentially a speed limiting mechanism in these detectors. It is shown that a theory of thermally assisted tunneling by polar optical phonon interaction is able to predict emission times consistent with the observed temporal response.
Heterodyne measurements have been made at 533 GHz using a novel superconducting hot-electron bolometer in a waveguide mixer. The bolometer is a 0.3 micrometer long niobium microbridge with a superconducting transition temperature of 5 K. The short length ensures that electron diffusion dominates over electron-phonon interactions as the electron cooling mechanism, which should allow heterodyne detection with intermediate frequencies (if) of several GHz. A Y-factor response of 1.15 dB has been obtained at an if of 1.4 GHz with 77 and 295 K loads, indicating a receiver noise temperature of 650 K DSB. The -3 dB rolloff in the if response occurs at 1.7 GHz.
A hot-electron transition-edge superconducting bolometer with adjustable thermal relaxation speed is proposed. The bolometer contacts are made from a superconductor with high critical temperature which blocks the thermal diffusion of hot carriers into the contacts. Thus electron-phonon interaction is the only mechanism for heat removal. The speed of thermal relaxation for hot electrons in a nanometer-size superconducting bolometer with T(sub c) = 100-300 mK is controlled by the elastic electron mean free path l. The relaxation rate behaves as T(sup 4)l at subkelvin temperatures and can be reduced by a factor of 10-100 by decreasing 1. Then an antenna- or wave guide-coupled bolometer with a time constant approx. = 10(exp -3) to 10(exp -4) s will exhibit photon-noise limited performance at millimeter and submillimeter wavelengths. The bolometer will have a figure-of-merit NEPtau = 10(exp -22) - 10(exp -21) W/Hz at 100 mK which is 10(exp 3) to 10(exp 4) times better (ie: smaller) than that of a state-of-the-art bolometer. A tremendous increase in speed and sensitivity will have a significant impact for observational mapping applications.
Modulation and switching of semiconductor lasers are important for laser-based information technology. Typically the speed of modulation and switching is limited by interband processes such as stimulated and spontaneous recombinations which occur on a nanosecond time scale. This is why the diode laser modulation has been restricted to tens of GHz. Modulation at higher speed is highly desirable as the information technology enters into the so-called tera-era. In this paper, we study the possibility of utilizing THz-field-induced plasma heating to modulate quantum-well lasers. This is a timely study since, with the advancement of THz solid-state sources and free-electron lasers, THz physics and related technology is currently coming out of its infancy. The investigation of interplaying THz and optical fields is also of intruiging fundamental interest. First, we introduce theoretical plasma heating results for the quantum-well optical amplifier in the presense of an intense half-cycle THz pulse. The heated carrier distributions are then utilized to calculate the THz-pulse-induced change in refractive index and gain profile. Since the electron-hole-plasma is heated using intraband transitions, we circumvent the usual complications due to an overall change in density, and the nonlinear recovery is governed solely by the carrier-LO-phonon interactions, typically 5 ps for a complete recovery. This procedure implies THz and sub-THz switching and recovery rates, respectively; using either gain modulation or index modulation. Plasma heating via steady-state THz fields is also studied. Finally, numerical simulation of a coupled set of equations to investigate the THz modulation based on a simplified model for quantum-well lasers is presented. Our results show that a semiconductor laser can be modulated at up to 1 THz with little distortion with a THz field amplitude at the order of a few kV/cm. Laser responses to a change in THz frequency will be shown. Constraints, practicalities, and applications will be discussed.
Linear absorption spectra arising from intersubband transitions in semiconductor quantum well heterostructures are analyzed using quantum kinetic theory by treating correlations to the first order within Hartree-Fock approximation. The resulting intersubband semiconductor Bloch equations take into account extrinsic dephasing contributions, carrier-longitudinal optical phonon interaction and carrier-interface roughness interaction which is considered with Ando s theory. As input for resonance lineshape calculation, a spurious-states-free 8-band kp Hamiltonian is used, in conjunction with the envelop function approximation, to compute self-consistently the energy subband structure of electrons in type II InAs/AlSb single quantum well structures. We demonstrate the interplay of nonparabolicity and many-body effects in the mid-infrared frequency range for such heterostructures.
Recent interest in bolometers for heterodyne mixing applications has prompted development of microbridges which are small enough to allow electron diffusion to dominate over electron-phonon interaction as a cooling mechanism.