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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Platform-agnostic waveguide integration of high-speed photodetectors with evaporated tellurium thin films

Many attractive photonics platforms still lack integrated photodetectors due to inherent material incompatibilities and lack of process scalability, preventing their widespread deployment. Here, we address the problem of scalably integrating photodetectors in a photonics-platform-independent manner. Using a thermal evaporation and deposition technique developed for nanoelectronics, we show that tellurium, a quasi-2D semi-conductive element, can be evaporated at low temperatures directly onto photonic chips to form air-stable, high-speed, ultrawide-band photodetectors. We demonstrate detection from visible (520 nm) to short-wave infrared (2.4 µm), a bandwidth of more than 40 GHz, and platform-independent scalable integration with photonic structures in silicon, silicon nitride, and lithium niobate.

42 ENGINEERING↗
DOE OSTI2020

Evaporated Se x Te 1-x Thin Films with Tunable Bandgaps for Short-Wave Infrared Photodetectors

Semiconducting absorbers in high-performance short-wave infrared (SWIR) photodetectors and imaging sensor arrays are dominated by single-crystalline germanium and III-V semiconductors. However, these materials require complex growth and device fabrication procedures. In this work, thermally evaporated Se x Te 1- x alloy thin films with tunable bandgaps for the fabrication of high-performance SWIR photodetectors are reported. From absorption measurements, it is shown that the bandgaps of Se x Te 1- x films can be tuned continuously from 0.31 eV (Te) to 1.87 eV (Se). Owing to their tunable bandgaps, the peak responsivity position and photoresponse edge of Se x Te 1- x film-based photoconductors can be tuned in the SWIR regime. By using an optical cavity substrate consisting of Au/Al 2 O 3 to enhance its absorption near the bandgap edge, the Se 0.32 Te 0.68 film (an optical bandgap of ≈0.8 eV)-based photoconductor exhibits a cut-off wavelength at ≈1.7 μm and gives a responsivity of 1.5 AW -1 and implied detectivity of 6.5 × 10 10 cm Hz 1/2 W -1 at 1.55 μm at room temperature. Importantly, the nature of the thermal evaporation process enables the fabrication of Se 0.32 Te 0.68 -based 42 × 42 focal plane arrays with good pixel uniformity, demonstrating the potential of this unique material system used for infrared imaging sensor systems.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Investigation on the AgPt and AgPd hybrid alloy nanoparticles (HANPs) for the hybrid MoS 2 /ZnO/HANP UV photodetector application

We report hybrid photodetectors made of two or more nanomaterial components can offer the high potential for advanced photodetection applications with enhanced light absorption, improved efficiency and structural tunability. A hybrid UV photodetector (PD) configuration incorporating the plasmonic hybrid alloy nanoparticles (HANP), ZnO quantum dots (QDs) and MoS 2 nanoflakes, namely MoS2/ZnO/HANP PD, is demonstrated. The optimized MoS 2 /ZnO/HANP PD exhibits a high photocurrent of 5.66 mA at 0.34 mW/mm 2 under 385 nm illumination with two orders of improvement from the bare ZnO, which is one of the highest photocurrents by the ZnO-based PDs. It also demonstrates high figure-of-merits with the responsivity of 14,523 mA/W, detectivity of 8.13 x 10 11 jones, and external quantum efficiency (EQE) of 4,680 %, outperforming most of the ZnO-based hybrid architectures. The enhanced photoresponse is primarily attributed to the significantly enhanced hot electron generation by the AgPd HANPs and photocarrier collection through the ZnO QD layer. MoS 2 nanoflakes also provide additional photon absorption sites and boost the photo-carrier transfer process. HANPs are grown by adapting a dual-step solid-state dewetting process (SSD) approach and the superiority of AgPd HANPs is confirmed by systematic investigation, FDTD simulation and comparison of AgPt and AgPd HANPs.

MoS2↗
DOE OSTI2021

Organic photodetector with built-in amplification for the detection of visible light with low optical power

We report on an organic-based photodetector that integrates a dual-gate organic thin-film transistor (DG-OTFT) with an organic photodiode (OPD) to produce a device with a high effective responsivity at low optical power and video-rate compatible response. In this device, the OPD operates in photovoltaic mode, instead of the commonly used photoconductive mode, to modulate one of the gate voltages of the DG-OTFT. Effective responsivity values of 10 A W –1 are measured at optical power values lower than 10 nW at 635 nm. Here, modeling of the operation of this new photodetector suggests that effective responsivity values up to 10 5 A W –1 can be achieved at optical powers of 1 nW using current printing technology and state-of-the-art organic semiconductors.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Broadband Infrared Carbon Nanotube Linear Photodetector Arrays

Carbon nanotubes (CNTs) possess exceptional optoelectronic properties, including broadband absorption and high absorption coefficients, making them promising candidates for photodetector applications. However, conventional designs often rely on single or aligned nanotubes, which restrict device scalability and require complex fabrication techniques. Here, in this work, we address these limitations by utilizing CNT-suspended solutions to fabricate large-area photodetectors based on CNT networks via vacuum filtration and direct laser scribing. CNT networks are uniformly formed onto low-thermal-conductance polymeric filter papers that serve as substrates and mitigate the need for suspended structures, reducing the fabrication complexity and cost. The CNT films are patterned into single devices and 49-pixel linear arrays by using a laser-cutting process, enabling scalable and cost-effective production. The resulting devices operate as bolometers and exhibit broad spectral sensitivity extending from visible to midwave infrared, showing stable operation at room temperature. We further demonstrate proof-of-concept IR imaging using linear arrays.

IR imaging↗
DOE OSTI2023

Ultrathin Amorphous Gallium Oxide Vacuum Ultraviolet Photodetectors

Gallium oxide is demonstrated to be an effective material for the detection of vacuum-ultraviolet (VUV) photons. Nanometer thick films of amorphous gallium oxide deposited by atomic layer deposition are found to exhibit large absorptivity in the VUV region 120–200 nm. We leverage the strong absorption of the ultrathin film to fabricate self-powered Schottky diode photodetectors using graphene as a VUV-transparent electrode. In conclusion, responsivity throughout the VUV is calculated, significantly extending the demonstrated spectral range of gallium oxide-based photodetectors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE

Here we report ultra-high responsivity of epitaxial (Sn x Ga 1–x ) 2 O 3 (TGO) Schottky UV-C photodetectors and experimentally identified the source of gain as deep-level defects, supported by first principles calculations. Epitaxial TGO films were grown by plasma-assisted molecular beam epitaxy on (–201) oriented n-type β-Ga 2 O 3 substrates. Fabricated vertical Schottky devices exhibited peak responsivities as high as 3.5 ×10 4 A/W at –5 V applied bias under 250 nm illumination with sharp cutoff shorter than 280 nm and fast rise/fall time in milliseconds order. Hyperspectral imaging cathodoluminescence (CL) spectra were examined to find the mid-bandgap defects, the source of this high gain. Irrespective of different tin mole fractions, the TGO epilayer exhibited extra CL peaks at the green band (~2.20 eV) not seen in β-Ga 2 O 3 along with enhancement of the blue emission-band (~2.64 eV) and suppression of the UV emission-band. Based on hybrid functional calculations of the optical emission expected for defects involving Sn in β-Ga 2 O 3 , V Ga –Sn complexes are proposed as potential defect origins of the observed green and blue emission-bands. Such complexes behave as acceptors that can efficiently trap photogenerated holes and are predicted to be predominantly responsible for the ultra-high photoconductive gain in the Sn-alloyed Ga 2 O 3 devices by means of thermionic emission and electron tunneling. Regenerating the V Ga –Sn defect complexes by optimizing the growth techniques, we have demonstrated a planar Schottky UV-C photodetector of the highest peak responsivity.

36 MATERIALS SCIENCE↗
DOE OSTI2022

All‐Printed Ultrahigh‐Responsivity MoS 2 Nanosheet Photodetectors Enabled by Megasonic Exfoliation

Abstract Printed 2D materials, derived from solution‐processed inks, offer scalable and cost‐effective routes to mechanically flexible optoelectronics. With micrometer‐scale control and broad processing latitude, aerosol‐jet printing (AJP) is of particular interest for all‐printed circuits and systems. Here, AJP is utilized to achieve ultrahigh‐responsivity photodetectors consisting of well‐aligned, percolating networks of semiconducting MoS 2 nanosheets and graphene electrodes on flexible polyimide substrates. Ultrathin (≈1.2 nm thick) and high‐aspect‐ratio (≈1 μm lateral size) MoS 2 nanosheets are obtained by electrochemical intercalation followed by megasonic atomization during AJP, which not only aerosolizes the inks but also further exfoliates the nanosheets. The incorporation of the high‐boiling‐point solvent terpineol into the MoS 2 ink is critical for achieving a highly aligned and flat thin‐film morphology following AJP as confirmed by grazing‐incidence wide‐angle X‐ray scattering and atomic force microscopy. Following AJP, curing is achieved with photonic annealing, which yields quasi‐ohmic contacts and photoactive channels with responsivities exceeding 10 3 A W −1 that outperform previously reported all‐printed visible‐light photodetectors by over three orders of magnitude. Megasonic exfoliation coupled with properly designed AJP ink formulations enables the superlative optoelectronic properties of ultrathin MoS 2 nanosheets to be preserved and exploited for the scalable additive manufacturing of mechanically flexible optoelectronics.

2D materials↗
DOE OSTI2025

Large‐Scale 2D Perovskite Nanocrystals Photodetector Array via Ultrasonic Spray Synthesis

Abstract 2D perovskite (PVSK) single crystals have received significant attention due to their unique optical and optoelectronic properties. However, current synthesis methods face limitations, particularly in large‐area fabrication, which remain critical barriers to practical applications. In this study, the synthesis of red/green/purple‐blue‐colored 2D PVSK nanocrystals over a large area (4‐inch wafer) and the fabrication of high‐performance photodetector arrays are presented via a facile yet efficient spray‐coating approach with a liquid‐bridge transport effect. The photodetector array achieves 100% working yield, high photo‐responsivity (1.5 × 10 6 A W −1 ) and specific‐detectivity (1.1 × 10 16 Jones) with competitive photomapping characteristics. An intelligent vision system for automatic shape recognition is further demonstrated with a recognition rate exceeding 90%. This study provides significant advances in the scalable synthesis of nanoscale 2D PVSK crystals, their integration into large‐area optoelectronic devices, and their potential use in artificial‐intelligence systems.

Lee, Yoon Ho [Davidson School of Chemical Engineer↗
DOE OSTI2021

High-Performance All-Polymer Solar Cells and Photodetectors Enabled by a High-Mobility n-Type Polymer and Optimized Bulk-Heterojunction Morphology

All-polymer solar cells (all-PSCs) and all-polymer photodetectors (all-PPDs) are promising for application in flexible electronics, but their performance is greatly limited by the lack of polymer acceptors and the difficulties in morphology control. Herein, we report the use of a high-mobility n-type polymer semiconductor, PNDI-DTBT, for fabricating high-performance all-PSCs and all-PPDs. By pairing PNDI-DTBT with a matched polymer donor, a prominent power conversion efficiency of 8.5% was obtained in all-PSCs, demonstrating the great potential of high-mobility n-type polymers with a conventional donor–acceptor skeleton for photovoltaic application. Moreover, all-PPDs with a low dark current density of 1.32 × 10 –8 A cm –2 at –0.1 V bias and a high specific detectivity of 4.77 × 10 12 Jones were achieved, which belong to the best results of organic photodetectors. Morphology investigations revealed that the formation of a bicontinuous interpenetrating network with optimal phase separation scale, high domain purity, and preferential vertical composition distribution in the bulk-heterojunction active layer contribute to the remarkable device performance. Furthermore, these results suggest that combining high-mobility n-type polymers and morphology optimization is fruitful to achieving high-performance all-PSCs and all-PPDs.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Surmounting the interband threshold limit by the hot electron excitation of multi-metallic plasmonic AgAuCu NPs for UV photodetector application

We report multi-metallic alloy NPs composed of various elemental compositions can surmount the interband threshold limit of mono-metallic NPs and thus can offer a promising route to boost up the performance limit of conventional ultraviolet photodetectors (PDs). In this work, a hybrid UV-PD configuration has been demonstrated by combining the multi-metallic plasmonic alloy NPs of AgCu, AuCu, and AgAuCu on a GaN photoactive layer in order to exploit the improved photo carrier injection by the strong hot electrons and LSPR. Among various devices, the tri-metallic AgAuCu NP PD demonstrates the highest performance with a remarkably high photocurrent of 1.47 x 10 -2 A at 1 V with fast rise (T r ) and fall (T f ) times of 170 and 700 ms with a very stable current. This leads to the superior figure-of-merit parameters of the PD with a photoresponsivity of 4.3 x 10 6 mA W-1, detectivity of 3.52 x 10 12 Jones and EQE of 1.39 x 10 6 %, which is ~16 times higher than the bare GaN PD. This ranks the AgAuCu PD as one of the best GaN based UV photodetectors. The photocurrent enhancement and excellent figure-of-merit can be attributed to the significantly increased photo carrier injection by the efficient hot electron generation via the LSPR and improved interfacial barrier characteristics by the tri-metallic elemental synergy.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Initial assessment of second generation of large-area picosecond photodetectors with multi-channel systems-on-a-chip readout

Here, we first briefly describe the history and motivation behind Cherenkov and scintillation light detection. We then discuss the instrumentation needed to detect these photons as it applies to both photodetectors and readout electronics. One of the motivations is future large neutrino detectors that could, in principle, differentiate between Cherenkov and scintillation light if using novel water-based scintillators. In this paper, we present the first measurements utilizing the second generation of Large Area Picosecond Photodetectors (LAPPDs) in conjunction with commercial system-on-a-chip readouts from Nalu Scientific—in particular, the High Density System on Chip (HDSoC) and Advanced ASoC Rapid Digitizer, Variable Adaptive Readout Chip (AARDVARC) platforms. These state-of-the-art full-waveform digitizers feature sampling rates on the order of 1 and 10 samples per nanosecond, respectively. Using a picosecond laser, we measured the timing jitter between a pair of LAPPD channels, demonstrating the potential of this setup for precise timing applications.

Li, V. A. [Lawrence Livermore National Laboratory ↗
DOE OSTI2024

Performance analysis of photodetectors based on 2D materials and heterostructures

The unprecedented demand for sophisticated, self-powered, compact, ultrafast, cost-effective, and broadband light sensors for a myriad of applications has spurred a lot of research, precipitating in a slew of studies over the last decade. Apart from the photosensing ability of an active element in the light sensor, the device architecture is crucial in terms of photoinduced charge carrier generation and separation. Since the inception of graphene and the subsequent research growth in the atomically thin 2D materials, researchers have developed and adapted different families of 2D materials and device architectures, including single element 2D, 0D/2D, 2D/2D, 1D/2D stacked structures, and so on. Here this review discusses the recent reports on the light-sensing properties of various 2D materials, their heterostructures, and characteristics applicable to the ultraviolet-near infrared (UV-NIR), short-wave IR (SWIR), mid-wave IR (MWIR), long-wave IR (LWIR), and terahertz (THz) spectral ranges. It highlights the novelty of the burgeoning field, the heightened activity at the boundaries of engineering and materials science, particularly in the generation of charge carriers, their separation, and extraction, and the increased understanding of the underpinning science through modern experimental approaches. Devices based on the simultaneous effects of the pyro-phototronic effect (PPE) and the localized surface plasmon resonance (LSPR) effect, the photothermoelectric effect (PTE)-assisted photodetectors (PDs), waveguide-integrated silicon-2D PDs, metal-2D-metal PDs, and organic material PDs are examined rigorously. Theoretical treatment utilizing various computational approaches to investigate 2D materials and heterostructures for photodetection applications is also briefly discussed. At the end, current challenges and solutions to enhance the figures of merit of photodetectors are proposed.

2D transition metal chalcogenides↗
DOE OSTI2023

A Large Area Picosecond Photodetector for Neutron Transmission Measurements at DICER at LANSCE

The Device for Indirect Capture Experiments on Radionuclides (DICER) is a new instrument that is being developed at the Los Alamos Neutron Science Center (LANSCE) to study neutron capture reactions on short-lived radionuclides. To achieve that, DICER is using an indirect technique based on measuring the neutron transmission through very small samples (0.12–1.2 mm in diameter, $\mu \text{g}$ -mg in mass). The main detection system of DICER consists of two dual photomultiplier (PMT)-based detectors which are sensitive to the scintillation light produced when neutrons interact with 6 Li glass disks. DICER is developing a new collimation system that includes a 0.1-mm collimator. In such small sizes, the need for neutron beam imaging is crucial and necessary to confirm the appropriate alignment between the irradiated sample and the neutron detectors. The large area picosecond photodetector (LAPPD) is a multichannel plate (MCP)-based photodetector, with picosecond-level timing, single-photon detection capabilities, and spatial resolution of the order of 1 mm. Coupling the LAPPD with a 6 Li glass scintillator results in a neutron imaging detector. The first irradiation of the LAPPD at DICER indicated that apart from imaging the beam, the LAPPD can be used as the main neutron detection system. Furthermore, these results were proof of principle measurements demonstrating the capabilities of the beamline, and the challenge with small samples will be addressed in the future. The first efforts and developments, including irradiations of the LAPPD and the first beam images, will be presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Multiple-polarization-sensitive photodetector based on a perovskite metasurface

Most polarization-sensitive photodetectors detect either linearly polarized (LP) or circularly polarized (CP) light. Here, we experimentally demonstrate a multiple-polarization photodetector based on a hybrid organic–inorganic perovskite (HOIP) metasurface, which is sensitive to both LP and CP light simultaneously. The perovskite metasurface is composed of a HOIP antenna array on a single-crystal HOIP film. Owing to the antenna anisotropy, the absorption of linearly polarized light at the metasurface depends on the polarization angle; also, due to the mirror asymmetry of the antenna elements, the metasurface is also sensitive to different circular polarizations. Polarization-dependent photocurrent responses to both LP and CP light are detected. Our results highlight the potential of perovskite metasurfaces for integrated photoelectric applications.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Understanding the optoelectronic properties of doped 2D organic-inorganic halide perovskite quantum wells: towards efficient quantum well IR photodetectors

Metal halide perovskite (MHP) multiple quantum wells which consist of multilayers of alternate organic and inorganic layers exhibit large exciton binding energies due to the dielectric confinement between the inorganic and organic layers. These naturally formed multiple quantum wells have strong spin-orbit coupling (SOC) due to the presence of heavy elements in their crystal structures. Although the fundamental properties of 2D MHPs are far from being entirely understood, it is widely accepted that their band edge absorption coefficient results from strong exciton interactions. However, studies demonstrating how different exciton interactions and doping effects influence electronic traps and disorder on the band edge absorption coefficient of 2D MHPs have not been demonstrated. Understanding these interactions in MHPs will allow us to access low energy optical transitions for the fabrication of solution processable short-to-mid-wavelength IR photodetectors (1 – 8 μm). Moreover, upon doping, it is possible to move the Fermi energy into the conduction band (CB) to favorably promote the transport of charges in a working device. Herein, we study the development of 2D MHPs having strong SOC, high carrier mobility, and tunable quantum well structures. Our studies shed light on the design and modulation of fundamental physical phenomena by carefully elucidating the role of dopants (n-type and p-type), exciton heterogeneity, orientation, structure, and bias stress effects on the performance of MHPs as potential IR photodetectors.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Neutrino Interactions observed with Large Area Picosecond Photodetectors in ANNIE

The Accelerator Neutrino Neutron Interaction Experiment (ANNIE) is a 26-ton water-based neutrino detector located at Fermilab, approximately 110 m downstream of the Booster Neutrino Beam (BNB). ANNIE utilizes both photomultiplier tubes (PMTs) and advanced photodetectors, specifically Large Area Picosecond Photodetectors (LAPPDs), to detect Cherenkov light emitted by leptons produced in neutrino interactions within ANNIE. LAPPDs are a novel technology designed to detect photons with picosecond-level temporal resolution and sub-millimetre spatial precision. Multiple LAPPDs have been deployed in the ANNIE detector. This is the first use of this technology in a running particle physics experiment and has yielded the first detection of light from neutrino interactions in water with LAPPDs. In this poster, I will showcase the operational performance and functionality of LAPPDs in the ANNIE experiment. Neutrino beam data from the BNB is used to evaluate the timing precision, hit reconstruction performance, and beam response of deployed LAPPDs, demonstrating how this novel picosecond-resolution technology performs in a running neutrino water Cherenkov detector. This work highlights the successful integration of LAPPDs in ANNIE and provides quantitative benchmarks that inform their application in future neutrino experiments requiring high-resolution photon detection.

Aman, Mohammad Adil [Florida State U.] (ORCID:0009↗
DOE OSTI2020

Laser-induced digital oxidation for copper-based flexible photodetectors

Copper oxide compounds (Cu x O) with bandgaps of 1.3–2.1 eV (CuO) and 2.1–2.6 eV (Cu 2 O) have been investigated as promising p-type semiconducting materials. Cu x O is generally obtained by deposition or thermal oxidation, but those methods are not optimal for flexible substrates. Furthermore, additional patterning steps are required to fabricate devices. In this work, we present an easy, controllable method to fabricate a metal-semiconductor-metal (MSM) photodetector using laser-induced oxidation of a thin Cu film. After laser irradiation, the Cu film is heated under ambient conditions, and this leads to a thermal oxidation reaction, in which Cu oxide is monolithically formed in the Cu film and a Cu-Cu x O-Cu MSM structure is produced. Since the laser offers localized heating, an arbitrary CuxO pattern can be written in the Cu film by spatially controlled heating. In addition, by optimizing the heating time, the laser-induced oxidation can be successfully performed even on a flexible substrate. To study the laser-induced oxidation, we examined the correlation between laser parameters and the oxidation pattern and analyzed the composition using scanning electron microscopy, Raman spectroscopy, and X-ray photoemission spectroscopy. Furthermore, we measured the transient photoresponse and employed scanning photocurrent microscopy to investigate the mechanism of carrier transport behavior.

36 MATERIALS SCIENCE↗