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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Skin-like low-noise elastomeric organic photodiodes

Stretchable optoelectronics made of elastomeric semiconductors could enable the integration of intelligent systems with soft materials, such as those of the biological world. Organic semiconductors and photodiodes have been engineered to be elastomeric; however, for photodetector applications, it remains a challenge to identify an elastomeric bulk heterojunction (e-BHJ) photoactive layer that combines a low Young’s modulus and a high strain at break that yields organic photodiodes with low electronic noise values and high photodetector performance. Here, a blend of an elastomer, a donor-like polymer, and an acceptor-like molecule yields a skin-like e-BHJ with a Young’s modulus of a few megapascals, comparable to values of human tissues, and a high strain at break of 189%. Elastomeric organic photodiodes based on e-BHJ photoactive layers maintain low electronic noise current values in the tens of femtoamperes range and noise equivalent power values in the tens of picowatts range under at least 60% strain.

42 ENGINEERING↗
NASA NTRS1976

Photoelectron counting with an image intensifier tube and a self-scanned photodiode array

A self-scanned photodiode array was fiber-optically coupled to an ITT proximity-focused image intensifier tube. It was determined that a single photoelectron event produces 34,000 charge carriers in a photodiode. This charge is only a factor of 2.8 above the rms noise level of the preamplifier used in the tests, but standard charge-sensitive techniques are at least a factor of 12 better. The image tube and photodiode array combination can be packaged in a disk 5.1 cm in diameter and 2.6 cm thick.

Sandel, B. R.↗
NASA NTRS1980

Some n-p (Hg,Cd)Te photodiodes for 8-14 micrometer heterodyne applications

The results describing the dc and CO2 laser heterodyne characteristics of a three element photodiode array and single element and four element photodiode arrays are presented. The measured data shows that the n(+)-p configuration is capable of achieving bandwidths of 475 to 725 MHz and noise equivalent powers of 3.2 x 10 to the minus 20th power W/Hz at 77 K and 1.0 x 10 to the minus 19th power W/Hz at 145 K. The n(+)-n(-)-p photodiodes exhibited wide bandwidths (approximately 2.0 GHz) and fairly good effective heterodyne quantum efficiencies (approximately 13-30 percent at 2.0 GHz). Noise equivalent powers ranging from 1.44 x 10 to the minus 19th power W/Hz to 6.23 x 10 to the minus 20th power W/Hz were measured at 2.0 GHz.

Shanley, J. F.↗
NASA NTRS1980

Comparative performance of HgCdTe photodiodes for heterodyne application

Photodiodes used as photomixers in heterodyne applications display quantum efficiencies that are lower than the dc quantum efficiency of the device. Measurement techniques used to obtain dc quantum efficiencies, midband heterodyne quantum efficiencies, and frequency roll off characteristics are described. Measurement results for two HgCdTe photodiodes are given and discussed. It is recommended that photodiodes used in heterodyne applications be tested for heterodyne quantum efficiency over the frequency band of interest for the particular application.

Kowitz, H. R.↗
NASA NTRS1984

The Use of Self-scanned Silicon Photodiode Arrays for Astronomical Spectrophotometry

The use of a Reticon self scanned silicon photodiode array for precision spectrophotometry is discussed. It is shown that internal errors are + or - 0.003 mag. Observations obtained with a photodiode array are compared with observations obtained with other types of detectors with agreement, from 3500 A to 10500 A, of 1%. The photometric properties of self scanned photodiode arrays are discussed. Potential pitfalls are given.

Cochran, A. L.↗
NASA NTRS1984

Photodiodes for Astronomical Stellar Radiometry

The theory of photodiodes and their application to radiometric measurements is reviewed. Some suggestions concerning photodiode detectors for use in stellar radiometric measurements are given. Quantum efficiency, linear response characteristics, and noise current values of silicon photodiodes are considered.

Schaefer, A. R.↗
NASA NTRS1987

Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodes

The properties of In(0.24)Ga(0.76)As/GaAs and GaAs/In(0.05)Ga(0.58)Al(0.37)As superlattice photodiodes grown by molecular beam epitaxy have been investigated. From the temporal response characteristics, deconvolved rise times about 60-100 ps are obtained. The measured responsivities of the photodiodes with dark currents of 5-10 nA at 10 V are about 0.4 A/W, which correspond to peak external quantum efficiencies of about 60 percent. These results indicate that very high performance photodiodes can be realized with strained layers.

Das, Utpal↗
NASA NTRS1988

Optical and electrical measurements on UV sensitive photodiodes

The optical and electrical characteristics of the various types of photodiodes potentially useful for UV radiometers were studied. It was concluded that both GaAsP and GaP photodiodes have advantages over silicon photodiodes in terms of spectral response and UV stability. Both GaAsP and GaP have excellent electrical characteristics for low frequency radiometers, although their high capacitance could be inconvenient for high frequency applications. GaAsP is particularly good with respect to dynamic range.

Lyall, H.↗
NASA NTRS1988

Characterization of avalanche photodiodes for lidar atmospheric return signal detectors

Results are presented from tests to characterize noise, dark current, overload, and gain versus bias, relationships of ten avalanche photodiodes. The advantages of avalanche photodiodes over photomultiplier tubes for given laser wavelengths and return signal amplitudes are outlined. The relationship between responsivity and temperature and dark current and temperature are examined. Also, measurements of the noise equivalent power, the excess noise factor, and linearity are given. The advantages of using avalanche photodiodes in the Lidar Atmospheric Sensing Experiment and the Lidar In-Space Technology Experiment are discussed.

Antill, C. W., Jr.↗
NASA NTRS2000

Analysis and Enhancement of Low-Light-Level Performance of Photodiode-Type CMOS Active Pixel Images Operated with Sub-Threshold Reset

Noise in photodiode-type CMOS active pixel sensors (APS) is primarily due to the reset (kTC) noise at the sense node, since it is difficult to implement in-pixel correlated double sampling for a 2-D array. Signal integrated on the photodiode sense node (SENSE) is calculated by measuring difference between the voltage on the column bus (COL) - before and after the reset (RST) is pulsed. Lower than kTC noise can be achieved with photodiode-type pixels by employing "softreset" technique. Soft-reset refers to resetting with both drain and gate of the n-channel reset transistor kept at the same potential, causing the sense node to be reset using sub-threshold MOSFET current. However, lowering of noise is achieved only at the expense higher image lag and low-light-level non-linearity. In this paper, we present an analysis to explain the noise behavior, show evidence of degraded performance under low-light levels, and describe new pixels that eliminate non-linearity and lag without compromising noise.

Pain, Bedabrata↗
NASA NTRS2013

Low-Noise Large-Area Photoreceivers with Low Capacitance Photodiodes

A quad photoreceiver includes a low capacitance quad InGaAs p-i-n photodiode structure formed on an InP (100) substrate. The photodiode includes a substrate providing a buffer layer having a metal contact on its bottom portion serving as a common cathode for receiving a bias voltage, and successive layers deposited on its top portion, the first layer being drift layer, the second being an absorption layer, the third being a cap layer divided into four quarter pie shaped sections spaced apart, with metal contacts being deposited on outermost top portions of each section to provide output terminals, the top portions being active regions for detecting light. Four transimpedance amplifiers have input terminals electrically connected to individual output terminals of each p-i-n photodiode.

Joshi, Abhay M.↗
NASA NTRS2017

Successful Space Flight of High-Speed InGaAs Photodiode Onboard the International Space Station

Photonic systems are required for several space applications, including satellite communication links and lidar sensors. Although such systems are ubiquitous in terrestrial applications, deployment in space requires the constituent components to withstand extreme environmental conditions, including wide operating temperature range, mechanical shock and vibration, and radiation. These conditions are significantly more stringent than alternative standards, namely Bellcore GR-468 and MIL-STD 883, which may be satisfied by typical, commercially available, photonic components. Furthermore, it is very difficult to simultaneously reproduce several aspects of space environment, including exposure to galactic cosmic rays (GCR), in a laboratory. Therefore, it is necessary to operate key photonic components in space to achieve a technology readiness level of 7 and beyond. Accordingly, the International Space Station (ISS) provides an invaluable test bed for qualifying such components for space missions. We present a fiber-pigtailed photodiode module, having a -3 dB bandwidth of 16.8 GHz, that survived 18 months on the ISS as part of the Materials International Space Station Experiment (MISSE) 7 mission. This module was launched by NASA Langley Research Center on November 16, 2009 on the Space Shuttle Atlantis (STS-129), as part of their lidar transceiver components. While orbiting on the ISS in a passive experiment container, the photodiode module was exposed to extreme temperature cycling from -157 degrees Celsius to +121 degrees Celsius 16 times a day, proton radiation from the inner Van Allen belt at the South Atlantic Anomaly, and galactic cosmic rays. The module returned to Earth on the Space Shuttle Endeavor (STS-134) on June 1, 2011 for further characterization. The post flight test of the photodiode module, shown in Fig. 1a, demonstrates no change in the module's performance, thus proving its survivability during launch and in space environment.

Joshi, Abhay↗
NASA NTRS2018

Low Excess Noise, High Gain Avalanche Photodiodes

A system, method, and apparatus for an avalanche photodiode with an enhanced multiplier layer are disclosed herein. In particular, the present disclosure teaches an avalanche photodiode having a multiplier with alternating layers of one or more quantum wells and one or more spacers. A method of making the avalanche photodiode includes growing the multiplier on a substrate.

Bai, Xiaogang↗
NASA NTRSDate not supplied

Linear Array Photodiode and Data Acquisition System Development for Multi-Point Line FLDI Measurements

The continuous development and advancement of multi-point line focused laser differential interferometry (FLDI) instruments requires larger numbers of acquisition channels to make more finely spatially resolved measurements of high-frequency flow fluctuations. No current off-the-shelf system exists for these line FLDI measurements, and so a single unified system consisting of a linear array photodiode, required electronics, and a data acquisition system has been developed to enhance the measurement resolution, both spatially and temporally. A printed circuit board was developed on which the linear array photodiode is mounted for inclusion into an existing FLDI system, and amplifier breakout boards incorporate electronics to condition the signal for the data acquisition system while retaining the necessary high frequency response. The data acquisition system uses a National Instruments chassis and multiple oscilloscope modules, with a specially-designed LabVIEW user interface for laboratory and wind tunnel setup, calibration, and testing. Details regarding the development of the linear array photodiode system and the data acquisition system are provided, and systematic testing of all components is presented, culminating in a test of the system integrated into an existing line FLDI system for measurements of a turbulent jet.

Joshua M Weisberger↗
DOE OSTI2022

High power density soft x-ray GaAs photodiodes with tailored spectral response

GaAs photodiode arrays have been designed for non-destructive monitoring of x-ray beam position in soft coherent beamline front ends in synchrotron light sources. A shallow p-on-n junction was employed to reduce the device photocurrent density to optimize the operation with beam power densities up to 20 W mm -2 , mainly coming from hard x-rays. With this approach, the photocurrent is primarily defined by the excess carriers generated by low-energy x-ray photons absorbed near the detector surface. The p–n junction structures were grown by molecular beam epitaxy and processed into 64-element linear photodiode arrays. The devices were characterized first in the visible range with a high-power Ar-ion laser and then tested in the soft and hard x-ray regions up to 10 keV at two beamlines of the National Synchrotron Light Source II. The responsivity was measured to be 0.16 A W -1 at 0.7 keV and 0.05 A W -1 at 6 keV in agreement with modeling. At higher x-ray energies the measured responsivity was lower than predicted in the framework of the carrier diffusion model; a possible explanation is discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Effect of Illumination Area on the Ultrafast Temporal Response of MSM GaN Photodiodes

We investigate the influence of spatial illumination profiles on the temporal response of metal–semiconductor–metal GaN photodiodes. Using both simulation and experimental measurements, we compare the response curves under two scenarios: illumination confined to the active area between electrodes and extended illumination beyond the contacts. The results show that limiting the beam illumination to the active region significantly sharpens the response, reducing the long decay tails associated with slow carrier drift from peripheral regions. As a result, the experimental data closely match simulation predictions, confirming that illumination geometry plays a critical role in optimizing photodiode performance for ultrafast detection applications.

Carrier drift time↗
NASA NTRS1998

Optimum Receiver Structure for PPM Signals with Avalanche Photodiode Statistics

The maximum likelihood decision statistic for detection of pulse-position modulated signals with an avalanche photodiode is derived, using the more accurate Webb density rather than Poisson or Gaussian approximations for the distribution of avalanche photodiode output electrons. It is shown that for Webb-distributed output electtrons, the maximum likelihood rule is to choose the PPM word corresponding to the slot with the maximum electron count.

avalanche photodiode PPM Gaussian Poisson↗
DOE OSTI2022

Demonstration of Spectral Selectivity of Efficient and Ultrafast GaN/AlGaN-Based Metal–Semiconductor–Metal Ultraviolet Photodiodes

Efficient and ultrafast (aluminum)-gallium-nitride-based metal-semiconductor-metal (Al x )Ga 1–x N ultraviolet photodiodes were implemented to investigate the spectral properties of GaN/AlGaN-based photodetectors. Al composition of the GaN templates were varied from 0-% to 30% to demonstrate the impact of Al mole fraction on the cutoff wavelength of these UV photodiodes. Asymmetric metal contact electrodes were fabricated to optimize the external quantum efficiency without compromising their ultrafast photoresponse. Here, the best performing devices exhibited a peak response of 4 V and an oscilloscope limited temporal pulse width of 61 ps at a 20-V bias with a peak spectral responsivity of 36.5 mA/W at 280 nm.

42 ENGINEERING↗