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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Surface and bulk two-level-system losses in lithium niobate acoustic resonators

Lithium niobate (LN) is a promising material for building acoustic resonators used in quantum applications, but its performance is limited by poorly understood material defects called two-level systems (TLSs). Here, in this work, we fabricate high-performance acoustic resonators from LN with quality factors up to 6 ×10 7 and use them to separate bulk and surface contributions to TLS loss. By comparing these bulk acoustic wave (BAW) resonators with previous surface-acoustic-wave and phononic-crystal studies, we show that devices with high surface-participation ratios are limited by surface TLSs, while our BAW devices reveal an intrinsic bulk TLS limit. Through systematic surface treatments and microscopy, we demonstrate that BAW resonator performance remains unchanged despite surface modifications, confirming operation in a bulk-limited regime. Here, our work establishes quantitative bounds on both surface and bulk TLS losses in LN within the context of the material growth and fabrication approaches we have pursued, and it provides guidance for future device engineering and materials development.

acoustic wave phenomena↗
DOE OSTI2022

Elastocaloric determination of the phase diagram of Sr 2 RuO 4

One of the main developments in unconventional superconductivity in the past two decades has been the discovery that most unconventional superconductors form phase diagrams that also contain other strongly correlated states. Many systems of interest are therefore close to more than one instability, and tuning between the resultant ordered phases is the subject of intense research. In recent years, uniaxial pressure applied using piezoelectric-based devices has been shown to be a particularly versatile new method of tuning, leading to experiments that have advanced our understanding of the fascinating unconventional superconductor Sr 2 RuO 4 . Here we map out its phase diagram using high-precision measurements of the elastocaloric effect in what we believe to be the first such study including both the normal and the superconducting states. We observe a strong entropy quench on entering the superconducting state, in excellent agreement with a model calculation for pairing at the Van Hove point, and obtain a quantitative estimate of the entropy change associated with entry to a magnetic state that is observed in proximity to the superconductivity. The phase diagram is intriguing both for its similarity to those seen in other families of unconventional superconductors and for extra features unique, so far, to Sr 2 RuO 4 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Contrasting c -axis and in-plane uniaxial stress effects on superconductivity and stripe order in La 1.885 Ba 0.115 CuO 4

The cuprate superconductor La 2−x Ba x CuO 4 (LBCO) near x = 0.125 is a striking example of intertwined electronic orders, where 3D superconductivity is anomalously suppressed, allowing spin and charge stripe order to develop. Understanding this interplay remains a key challenge in cuprates, highlighting the necessity of external tuning for deeper insight. While in-plane uniaxial stress enhances superconductivity and suppresses stripe order, the effects of c -axis compression remains largely unexplored. Here, we use muon spin rotation ( μ SR) and AC susceptibility with an in situ piezoelectric stress device to investigate the spin-stripe order and superconductivity in LBCO-0.115 under c-axis compression. The measurements reveal a gradual suppression of the superconducting transition temperature ( T c ) with increasing c -axis stress, in stark contrast to the strong enhancement observed under in-plane stress. We further show that while in-plane stress rapidly reduces both the magnetic volume fraction ( V m ) and the spin-stripe ordering temperature ( T so ), c-axis compression has no effect, with V m and T so exhibiting an almost unchanged behavior up to the highest applied stress of 0.21 GPa. These findings demonstrate a strong anisotropy in stress response.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Comparison of amplification via the acousto-electric effect of Rayleigh and Leaky-SAW modes in a monolithic surface InP:InGaAs/lithium niobate heterostructure

This work demonstrates a monolithic surface acoustic wave amplifier fabricated by state-of-the-art heterogenous integration of a III-V InGaAs-based epitaxial material stack and LiNbO 3 . We compare amplification of Raleigh-SAW and leaky-SAW modes on a on Y-cut, X-propagating delay line amplifier. Due to the superior properties of the materials employed, we observe a net terminal gain of 3dB for an LSAW overtone mode This platform enables further advances in active and non-reciprocal piezoelectric acoustic devices.

42 ENGINEERING↗
DOE OSTI2022

Direct ink write multi-material printing of PDMS-BTO composites with MWCNT electrodes for flexible force sensors

Here, with recent advances of additive manufacturing technology, direct ink write (DIW) printing has allowed to incorporate multi-material printing of various materials with freedom of design and complex geometric shapes to complete functional sensors in a one-step fabrication. This paper introduces the use of DIW 3D printing of polydimethylsiloxane (PDMS) with barium titanate (BTO) filler as stretchable composites with tunable piezoelectric properties that can be used for force sensors applications. To improve the bonding between stretchable piezoelectric composites and electrodes, multi-walled carbon nanotubes was included in the fabrication of electrodes at a fixed ratio of 11 wt. %. The alignment of the BTO dipoles was achieved through corona poling method, which applies an electric charge on the surface layer of the functional material, aligning the dipoles in the desired direction and thus gaining the piezoelectricity. Different BTO mixing ratios (10–50 wt. %) were evaluated in order to obtain tunable piezoelectric properties and compare the sensitivity with respect their elastic properties. Tensile testing and piezoelectric testing were carried out to characterize mechanical and piezoelectric properties. Results showed that fabricated PDMS with 50 wt. % BTO gave the highest piezoelectric coefficient (d 33 ) of 11.5 pC N -1 and with an output voltage of 385 mV under compression loading of >200 lbF. This demonstrates feasibility of using multi-material DIW printing to fabricate piezoelectric force sensors with integrated electrodes in one-step without compromising the flexibility of the material.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Hybrid semiconductor-piezoacoustic radiofrequency device

An amplifying radiofrequency device includes a piezoelectric film and a semiconductor amplifier layer. The piezoelectric film is conformed as an acoustic waveguide. The piezoelectric film has a principal acoustic propagation direction parallel to the principal conduction direction of the amplifier layer. Interdigitated transducers are positioned on the piezoelectric film to respectively launch an acoustic wave in response to an input RF signal, and transduce the acoustic wave back to an output RF signal. There is a distance of less than the acoustic wavelength between the semiconductor amplifier layer and the piezoelectric film. The piezoelectric film has a thickness of less than the acoustic wavelength. According to a method for making such a device, a stack of III-V layers is epitaxially grown on a III-V substrate, wherein the stack comprises a first etch stop layer, a second etch stop layer, an amplifier layer, and a contact layer. The stack is bonded to a lithium niobate film. The III-V substrate is removed by etching down to the first etch stop layer. Deposition windows are opened by etching from the first etch stop layer down to the contact layer. Metal contact electrodes are deposited in the deposition windows.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Density Functional Theory Study of Epitaxially Strained Monolayer Transition Metal Chalcogenides for Piezoelectricity Generation

Two-dimensional transition metal chalcogenides (2D TMCs) are known for their wide range of bandgaps, flexibility, and high strength. Recent synthesis and data mining efforts indicate that 56 2D TMCs have low exfoliation energies and are relatively stable in monolayer form. Under epitaxial strain, we predict using density functional theory (DFT) calculations that the majority of these 2D TMCs can accommodate ±10% strain without breaking their crystal symmetry. The elastic and piezoelectric tensors indicate that 22 of 56 candidates are piezoelectric, and we derive their in-plane piezoelectric coefficient d 11 . The epitaxial strain is further predicted to enhance the d 11 by over 100% at 10% tensile epitaxial strain for most of these piezoelectric 2D TMCs. ReSe 2 at pristine state and Au 2 Se 2 at +5% epitaxial strain are predicted to obtain the extreme d 11 coefficients at -120 and 326 pm/V, respectively. Lastly, these findings have implications for the use of high-performance 2D piezoelectric materials in devices.

2D materials↗
DOE OSTI2025

Gigahertz-frequency acousto-optic phase modulation of visible light in a CMOS-fabricated photonic circuit

Optical phase modulators operating at visible wavelengths are essential components for photonic technologies such as those for quantum control, communications, and laser ranging. However, they remain challenging to implement in scalable, integrated platforms capable of handling high optical powers. Here we present a visible-light, gigahertz-frequency acousto-optic phase modulator, fabricated on a 200-mm wafer in a volume CMOS foundry, that supports greater than 500 mW of optical power at 730 nm. The device combines a piezoelectric transducer and a photonic waveguide within a single, wavelength-scale structure that confines both a propagating optical mode and an electrically excitable breathing-mode mechanical resonance. By tuning the device’s geometry to optimize the optomechanical interaction, we achieve modulation depths up to 4.85 rad with 80 mW of applied microwave power at 2.31 GHz in a 2-mm-long device. This corresponds to resonant modulation figures of merit of V π = 1.32V and V π ⋅ L = 0.26V cm. To our knowledge, this is the lowest V π ever demonstrated in any acousto-optic phase modulator and represents a 15-fold reduction in V π and a 100-fold reduction in required microwave power relative to state-of-the-art modulators with high visible-wavelength power handling commonly employed in quantum control systems.

Freedman, Jacob M. [Univ. of Arizona, Tucson, AZ (↗
DOE OSTI2021

Nanocomposite‐Seeded Epitaxial Growth of Single‐Domain Lithium Niobate Thin Films for Surface Acoustic Wave Devices

Epitaxial lithium niobate (LNO) thin films are an attractive material for devices across a broad range of fields, including optics, acoustics, and electronics. These applications demand high‐quality thin films without in‐plane growth domains to reduce the optical/acoustical losses and optimize efficiency. Twin‐free single‐domain‐like growth has been achieved previously, but it requires specific growth conditions that might be hard to replicate. In this work, a versatile nanocomposite‐seeded approach is demonstrated as an effective approach to grow single‐domain epitaxial lithium niobate thin films. Films are grown through a pulsed laser deposition method and growth conditions are optimized to achieve high‐quality epitaxial film. A comprehensive microstructure characterization is performed and optical properties are measured. A piezoelectric acoustic resonator device is developed to demonstrate the future potential of the nanocomposite‐seeded approach for high‐quality LNO growth for radio frequency (RF) applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Ultrasonic oscillatory two-phase flow in microchannels

Experimental and numerical investigations are performed to provide an assessment of the transport behavior of an ultrasonic oscillatory two-phase flow in a microchannel. The work is inspired by the flow observed in an innovative ultrasonic fabric drying device using a piezoelectric bimorph transducer with microchannels, where a water-air two-phase flow is transported by harmonically oscillating microchannels. The flow exhibits highly unsteady behavior as the water and air interact with each other during the vibration cycles, making it significantly different from the well-studied steady flow in microchannels. Here, the computational fluid dynamics (CFD) modeling is realized by combing the turbulence Reynolds-averaged Navier-Stokes (RANS) k – ω model with the phase-field method to resolve the dynamics of the two-phase flow. The numerical results are qualitatively validated by the experiment. Through parametric studies, we specifically examined the effects of vibration conditions (i.e., frequency and amplitude), microchannel taper angle, and wall surface contact angle (i.e., wettability) on the flow rate through the microchannel. The results will advance the potential applications where oscillatory or general unsteady microchannel two-phase flows may be present.

42 ENGINEERING↗
DOE OSTI2025

Strain-tunable microwave-resonance technique for quantum materials

By integrating a dielectric microwave resonator with a piezoelectric-based strain device, we develop an in situ strain-tunable microwave spectroscopy technique that enables contactless measurements of material properties under strain. To demonstrate the capability of this device, we measure the strain-dependent microwave surface impedance of the representative iron-based superconductor Ba⁢Fe 2 (As 1−𝑥 ⁢P 𝑥 ) 2 at the slightly overdoped composition. We successfully control and observe the suppression of superconductivity under both compressive and tensile anisotropic lattice distortions along the tetragonal [110] T direction, as manifested by changes in the quality factor and resonance frequency shifts of microwave resonance. Furthermore, strain-induced changes in microwave surface resistivity, an extension of conventional DC-limit transport elastoresistivity to the microwave regime, provide information on electronic anisotropy equivalent to that of DC elastoresistivity, while offering a contactless alternative. Furthermore, our strain-tunable cavity therefore serves as a powerful, contactless probe of fundamental material properties under strain and may also potentially facilitate the design of hybrid quantum systems with strain-engineered quantum degrees of freedom.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Determining the oxidation stability of SnSe under atmospheric exposure

Abstract Understanding surface stability becomes critical as 2D materials like SnSe are developed for piezoelectric and optical applications. SnSe thin films deposited by molecular beam epitaxy showed no structural changes after a two-year exposure to atmosphere, as confirmed by X-ray diffraction and Raman spectroscopy. X-ray photoelectron spectroscopy and reflectivity show a stable 3.5 nm surface oxide layer, indicating a self-arresting oxidative process. Resistivity measurements show an electrical response dominated by SnSe post-exposure. This work shows that SnSe films can be used in ambient conditions with minimal risk of long-term degradation, which is critical for the development of piezoelectric or photovoltaic devices. Graphical Abstract

Chin, Jonathan R. (ORCID:0000000273205678)↗
DOE OSTI2021

Conducting metal oxides integrated with the surface acoustic wave (SAW) sensor platform

One or more embodiments relates a single port surface acoustic wave sensor (SAW) device adapted for use in a wide range of operational temperatures and gas phase chemical species. The device includes a piezoelectric crystal substrate; at least one interdigitated electrode/transducer (IDT) positioned on the piezoelectric crystal substrate; and at least one conducting metal oxide film positioned on the piezoelectric crystal substrate and in communication with at least the IDT.

Ohodnicki, Jr., Paul R.↗
DOE OSTI2023

Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution

A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are some of the outstanding properties that have made Sc x Al 1-x N a promising material in numerous MEMS and optoelectronics applications. One of the substantial challenges of fabricating Sc x Al 1-x N devices is its difficulty in etching, specifically with higher scandium concentration. In this work, we have developed an experimental approach with high temperature annealing followed by a wet etching process using tetramethyl ammonium hydroxide (TMAH), which maintains etching uniformity across various Sc compositions. The experimental results of etching approximately 730 nm of Sc x Al 1-x N (x = 0.125, 0.20, 0.40) thin films show that the etch rate decreases with increasing scandium content. Nevertheless, sidewall verticality of 85°~90° (±0.2°) was maintained for all Sc compositions. Based on these experimental outcomes, it is anticipated that this etching procedure will be advantageous in the fabrication of acoustic, photonic, and piezoelectric devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Localized strain profile in surface electrode array for programmable composite multiferroic devices

In this work, we investigate localized in-plane strains on the microscale, induced by arrays of biased surface electrodes patterned on piezoelectrics. Particular focus is given to the influence that adjacent electrode pairs have on one another to study the impact of densely packed electrode arrays. We present a series of X-ray microdiffraction studies to reveal the spatially resolved micrometer-scale strain distribution. The strain maps with micrometer-scale resolution highlight how the local strain profile in square regions up to 250 x 250 lm 2 in size is affected by the surface electrodes that are patterned on ferroelectric single-crystal [Pb(Mg 1/3 Nb 2/3 )O 3 ] x -[PbTiO 3 ] 1-x . The experimental measurements and simulation results show the influence of electrode pair distance, positioning of the electrode pair, including the angle of placement, and neighboring electrode pair arrangements on the strength and direction of the regional strain. Our findings are relevant to the development of microarchitected strain-mediated multiferroic devices. The electrode arrays could provide array-addressable localized strain control for applications including straintronic memory, probabilistic computing platforms, microwave devices, and magnetic-activated cell sorting platforms.

42 ENGINEERING↗
DOE OSTI2021

Equalization of Intensity-Modulated Fiber-Optic Voltage Sensors for Power Distribution Systems

We test fiber-optic voltage sensors based on optical reflection from a piezoelectric transducer. Our specific devices possess a 2 kHz fundamental resonance, and we verify a readily usable frequency band from approximately 10 Hz to 3 kHz, with a dynamic range of 60 dB for a detection system integrating over this entire band. Additionally, we demonstrate a digital signal processing approach to equalize the measured frequency response, enabling accurate retrieval of short-pulse inputs. These results suggest the value and applicability of intensity-modulated fiber-optic voltage sensors for measuring both steady-state waveforms and broadband transients which, coupled with the straightforward and compact design of the sensors, should make them effective tools in electric grid monitoring.

42 ENGINEERING↗
DOE OSTI2024

Continuously tunable uniaxial strain control of van der Waals heterostructure devices

Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based in situ uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to –0.15% at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures and can be easily extended to include additional characterization techniques.

Electrical properties and parameters↗