SEARCH · Search NASA

Results for “power conversion harmonics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2

All sources NASA NTRS DOE OSTI

NASA NTRS2001

Intersymbol Interference Investigations Using a 3D Time-Dependent Traveling Wave Tube Model

For the first time, a physics based computational model has been used to provide a direct description of the effects of the TWT (Traveling Wave Tube) on modulated digital signals. The TWT model comprehensively takes into account the effects of frequency dependent AM/AM and AM/PM conversion; gain and phase ripple; drive-induced oscillations; harmonic generation; intermodulation products; and backward waves. Thus, signal integrity can be investigated in the presence of these sources of potential distortion as a function of the physical geometry of the high power amplifier and the operational digital signal. This method promises superior predictive fidelity compared to methods using TWT models based on swept amplitude and/or swept frequency data. The fully three-dimensional (3D), time-dependent, TWT interaction model using the electromagnetic code MAFIA is presented. This model is used to investigate assumptions made in TWT black box models used in communication system level simulations. In addition, digital signal performance, including intersymbol interference (ISI), is compared using direct data input into the MAFIA model and using the system level analysis tool, SPW (Signal Processing Worksystem).

Kory, Carol L.↗

NASA NTRS2002

Intersymbol Interference Investigations Using a 3D Time-Dependent Traveling Wave Tube Model

For the first time, a time-dependent, physics-based computational model has been used to provide a direct description of the effects of the traveling wave tube amplifier (TWTA) on modulated digital signals. The TWT model comprehensively takes into account the effects of frequency dependent AM/AM and AM/PM conversion; gain and phase ripple; drive-induced oscillations; harmonic generation; intermodulation products; and backward waves. Thus, signal integrity can be investigated in the presence of these sources of potential distortion as a function of the physical geometry and operating characteristics of the high power amplifier and the operational digital signal. This method promises superior predictive fidelity compared to methods using TWT models based on swept- amplitude and/or swept-frequency data. First, the TWT model using the three dimensional (3D) electromagnetic code MAFIA is presented. Then, this comprehensive model is used to investigate approximations made in conventional TWT black-box models used in communication system level simulations. To quantitatively demonstrate the effects these approximations have on digital signal performance predictions, including intersymbol interference (ISI), the MAFIA results are compared to the system level analysis tool, Signal Processing Workstation (SPW), using high order modulation schemes including 16 and 64-QAM.

Kory, Carol L.↗

NASA NTRS2002

Higher Order Modulation Intersymbol Interference Caused by Traveling-wave Tube Amplifiers

For the first time, a time-dependent, physics-based computational model has been used to provide a direct description of the effects of the traveling wave tube amplifier (TWTA) on modulated digital signals. The TWT model comprehensively takes into account the effects of frequency dependent AM/AM and AM/PM conversion; gain and phase ripple; drive-induced oscillations; harmonic generation; intermodulation products; and backward waves, Thus, signal integrity can be investigated in the presence of these sources of potential distortion as a function of the physical geometry and operating characteristics of the high power amplifier and the operational digital signal. This method promises superior predictive fidelity compared to methods using TWT models based on swept-amplitude and/or swept-frequency data. First, the TWT model using the three dimensional (3D) electromagnetic code MAFIA is presented. Then, this comprehensive model is used to investigate approximations made in conventional TWT black-box models used in communication system level simulations, To quantitatively demonstrate the effects these approximations have on digital signal performance predictions, including intersymbol interference (ISI), the MAFIA results are compared to the system level analysis tool, Signal Processing, Workstation (SPW), using high order modulation schemes including 16 and 64-QAM.

Kory, Carol L.↗

NASA NTRS1980

Analysis of mode-locked and intracavity frequency-doubled Nd:YAG laser

The paper presents analytical and computer studies of the CW mode-locked and intracavity frequency-doubled Nd:YAG laser which provide new insight into the operation, including the detuning behavior, of this type of laser. Computer solutions show that the steady-state pulse shape for this laser is much closer to a truncated cosine than to a Gaussian; there is little spectral broadening for on-resonance operation; and the chirp is negligible. This leads to a simplified analytical model carried out entirely in the time domain, with atomic linewidth effects ignored. Simple analytical results for on-resonance pulse shape, pulse width, signal intensity, and harmonic conversion efficiency in terms of basic laser parameters are derived from this model. A simplified physical description of the detuning behavior is also developed. Agreement is found with experimental studies showing that the pulsewidth decreases as the modulation frequency is detuned off resonance; the harmonic power output initially increases and then decreases; and the pulse shape develops a sharp-edged asymmetry of opposite sense for opposite signs of detuning.

Siegman, A. E.↗

NASA NTRS1992

InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

Bhapkar, Udayan V.↗

NASA NTRS1978

Dynamics of drive systems for wind energy conversion

Calculations are performed to determine the dynamic effects of mechanical power transmission from the nacelle of a horizontal axis wind machine to the ground or to an intermediate level. It is found that resonances are likely at 2 or 4/REV, but they occur at low power only, and seem easily correctable. Large reductions are found in the harmonic torque inputs to the generator at powers near rated.

Martinez-Sanchez, M.↗

NASA NTRS1995

An X-Band Mixer Engineered for 77 K Operation

An X-band Si-diode singly balanced mixer developed specifically for cryogenic operation is presented. In order to reduce thermal demands on a mechanical cooler, the mixer was designed to operate with a minimum of local oscillator (LO) power. That is, since the LO had to be cooled to reduce phase noise, it was desirable to minimize the LO drive. Novel embedding circuit strategy was responsible for nearly theoretical performance. The signal-matching circuit simultaneously provided a reactive termination to the image, sum, and first, second, and third LO harmonic frequencies. A conversion loss of 3.2 dB at 77 K with an LO drive of +1 dBm was measured. This loss included IF filter, dc block, and hybrid coupler losses. Mixer conversion loss is shown to be consistent with the theoretical performance limit expected from the intrinsic diode. The relationship among junction capacitance, flat-band potential, and conversion loss is examined.

Romanofsky, Robert R.↗

NASA NTRS2001

The HP 85192B EEFet3 GaAs FET Nonlinear Model Used in the High Efficiency Microwave Power Amplifier (HEMPA)

Most nonlinear circuit analysis programs that exist today were designed primarily for transient analysis. By incorporating more accurate models in simulation programs, accurate predictions of GaAs field effect transistors (FET) behavior can be accomplished. However, should the designer need to simulate GaAs FETs that operate at high DC-to-RF conversion efficiencies, a more sophisticated model is needed. A relevant and appropriate method is called harmonic-balance, as described by Quere et al.

Sims, William Herbert, III↗

NASA NTRS1976

Second NASA Conference on Laser Energy Conversion

The possible transmission of high power laser beams over long distances and their conversion to thrust, electricity, or other useful forms of energy is considered. Specific topics discussed include: laser induced chemistry; developments in photovoltaics, including modification of the Schottky barrier devices and generation of high voltage emf'sby laser radiation of piezoelectric ceramics; the thermo electronic laser energy converter and the laser plasmadynamics converters; harmonic conversion of infrared laser radiation in molecular gases; and photon engines.

Billman, K. W.↗

NASA NTRS2010

An Integrated 520-600 GHz Sub-Harmonic Mixer and Tripler Combination Based on GaAs MMIC Membrane Planar Schottky Diodes

We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results on the metal block give best DSB mixer noise temperature of 2360 K and conversion losses of 7.7 dB at 520 GHz. Preliminary results on the silicon micro-machined blocks give a DSB mixer noise temperature of 4860 K and conversion losses of 12.16 dB at 540 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer for both packages is between 30 and 50 mW.

Monolithic Microwave Integrated Circuit, (MMIC)↗

NASA NTRS2011

An Integrated 520-600 GHz Sub-Harmonic Mixer and Tripler Combination Based on GaAs MMIC Membrane Planar Schottky Diodes

passively cooled detectors↗

NASA NTRS2002

Digital Distortion Caused by Traveling- Wave-Tube Amplifiers Simulated

Future NASA missions demand increased data rates in satellite communications for near real-time transmission of large volumes of remote data. Increased data rates necessitate higher order digital modulation schemes and larger system bandwidth, which place stricter requirements on the allowable distortion caused by the high-power amplifier, or the traveling-wave-tube amplifier (TWTA). In particular, intersymbol interference caused by the TWTA becomes a major consideration for accurate data detection at the receiver. Experimentally investigating the effects of the physical TWTA on intersymbol interference would be prohibitively expensive, as it would require manufacturing numerous amplifiers in addition to acquiring the required digital hardware. Thus, an accurate computational model is essential to predict the effects of the TWTA on system-level performance when a communication system is being designed with adequate digital integrity for high data rates. A fully three-dimensional, time-dependent, TWT interaction model has been developed using the electromagnetic particle-in-cell code MAFIA (Solution of Maxwell's equations by the Finite-Integration-Algorithm). It comprehensively takes into account the effects of frequency-dependent AM (amplitude modulation)/AM and AM/PM (phase modulation) conversion, gain and phase ripple due to reflections, drive-induced oscillations, harmonic generation, intermodulation products, and backward waves. This physics-based TWT model can be used to give a direct description of the effects of the nonlinear TWT on the operational signal as a function of the physical device. Users can define arbitrary excitation functions so that higher order modulated digital signals can be used as input and that computations can directly correlate intersymbol interference with TWT parameters. Standard practice involves using communication-system-level software packages, such as SPW, to predict if adequate signal detection will be achieved. These models use a nonlinear, black-box model to represent the TWTA. The models vary in complexity, but most make several assumptions regarding the operation of the high-power amplifier. When the MAFIA TWT interaction model was used, these assumptions were found to be in significant error. In addition, digital signal performance, including intersymbol interference, was compared using direct data input into the MAFIA model and using the system-level analysis tool SPW for several higher order modulation schemes. Results show significant differences in predicted degradation between SPW and MAFIA simulations, demonstrating the significance of the TWTA approximations made in the SPW model on digital signal performance. For example, a comparison of the SPW and MAFIA output constellation diagrams for a 16-ary quadrature amplitude modulation (16-QAM) signal (data shown only for second and fourth quadrants) is shown. The upper-bound degradation was calculated from the corresponding eye diagrams. In comparison to SPW simulations, the MAFIA data resulted in a 3.6-dB larger degradation.

Kory, Carol L.↗

NASA NTRS2007

WGM-Based Photonic Local Oscillators and Modulators

Photonic local oscillators and modulators that include whispering-gallery mode (WGM) optical resonators have been proposed as power-efficient devices for generating and detecting radiation at frequencies of the order of a terahertz. These devices are intended especially to satisfy anticipated needs for receivers capable of detecting lowpower, narrow-band terahertz signals to be used for sensing substances of interest in scientific and military applications. At present, available terahertz-signal detectors are power-inefficient and do not afford the spectral and amplitude resolution needed for detecting such signals. The proposed devices would not be designed according to the conventional approach of direct detection of terahertz radiation. Instead, terahertz radiation would first be up-converted into the optical domain, wherein signals could be processed efficiently by photonic means and detected by optical photodetectors, which are more efficient than are photodetectors used in conventional direct detection of terahertz radiation. The photonic devices used to effect the up-conversion would include a tunable optical local oscillator and a novel electro-optical modulator. A local oscillator according to the proposal would be a WGM-based modelocked laser operating at a desired pulserepetition rate of the order of a terahertz. The oscillator would include a terahertz optical filter based on a WGM microresonator, a fiber-optic delay line, an optical amplifier (which could be either a semiconductor optical amplifier or an erbium-doped optical fiberamplifier), and a WGM Ka-band modulator. The terahertz repetition rate would be obtained through harmonic mode locking: for example, by modulating the light at a frequency of 33 GHz and locking each 33d optical mode, one would create a 1.089-THz pulse train. The high resonance quality factors (Q values) of WGM optical resonators should make it possible to decrease signal-generation threshold power levels significantly below those of other optical-signal-generation devices.

Matsko, Andrey↗

NASA NTRS1991

System and component design and test of a 10 hp, 18,000 rpm AC dynamometer utilizing a high frequency AC voltage link, part 1

Hard and soft switching test results conducted with one of the samples of first generation MOS-controlled thyristor (MCTs) and similar test results with several different samples of second generation MCT's are reported. A simple chopper circuit is used to investigate the basic switching characteristics of MCT under hard switching and various types of resonant circuits are used to determine soft switching characteristics of MCT under both zero voltage and zero current switching. Next, operation principles of a pulse density modulated converter (PDMC) for three phase (3F) to 3F two-step power conversion via parallel resonant high frequency (HF) AC link are reviewed. The details for the selection of power switches and other power components required for the construction of the power circuit for the second generation 3F to 3F converter system are discussed. The problems encountered in the first generation system are considered. Design and performance of the first generation 3F to 3F power converter system and field oriented induction moter drive based upon a 3 kVA, 20 kHz parallel resonant HF AC link are described. Low harmonic current at the input and output, unity power factor operation of input, and bidirectional flow capability of the system are shown via both computer and experimental results. The work completed on the construction and testing of the second generation converter and field oriented induction motor drive based upon specifications for a 10 hp squirrel cage dynamometer and a 20 kHz parallel resonant HF AC link is discussed. The induction machine is designed to deliver 10 hp or 7.46 kW when operated as an AC-dynamo with power fed back to the source through the converter. Results presented reveal that the proposed power level requires additional energy storage elements to overcome difficulties with a peak link voltage variation problem that limits reaching to the desired power level. The power level test of the second generation converter after the addition of extra energy storage elements to the HF link are described. The importance of the source voltage level to achieve a better current regulation for the source side PDMC is also briefly discussed. The power levels achieved in the motoring mode of operation show that the proposed power levels achieved in the generating mode of operation can also be easily achieved provided that no mechanical speed limitation were present to drive the induction machine at the proposed power level.

Lipo, Thomas A.↗

NASA NTRS1992

Progress on single barrier varactors for submillimeter wave power generation

Theoretical work on Single Barrier Varactor (SBV) diodes, indicate that the efficiency for a multiplier has a maximum for a considerably smaller capacitance variation than previously thought. The theoretical calculations are performed, both with a simple theoretical model and a complete computer simulation using the method of harmonic balance. Modeling of the SBV is carried out in two steps. First, the semiconductor transport equations are solved simultaneously using a finite difference scheme in one dimension. Secondly, the calculated I-V, and C-V characteristics are input to a multiplier simulator which calculates the optimum impedances, and output powers at the frequencies of interest. Multiple barrier varactors can also be modeled in this way. Several examples on how to design the semiconductor layers to obtain certain characteristics are given. The calculated conversion efficiencies of the modeled structures, in a multiplier circuit, are also presented. Computer simulations for a case study of a 750 GHz multiplier show that InAs diodes perform favorably compared to GaAs diodes. InAs and InGaAs SBV diodes have been fabricated and their current vs. voltage characteristics are presented. In the InAs diode, was the large bandgap semiconductor AlSb used as barrier. The InGaAs diode was grown lattice matched to an InP substrate with InAlAs as a barrier material. The current density is greatly reduced for these two material combinations, compared to that of GaAs/AlGaAs SBV diodes. GaAs based diodes can be biased to higher voltages than InAs diodes.

Nilsen, Svein M.↗

NASA NTRS1994

Integrated Back-to-Back Barrier-N-N + Varactor Diode Tripler Using a Split-waveguide Block

The back-to-back barrier-N-N + (bbBNN) varactor is a nonlinear device being developed for frequency multiplier applications above 100 GHz. Its symmetrical C-V characteristic, low series resistance and suitability to planarization make it ideal choice for high frequency, low power, odd harmonic generation. In this paper, development of an integrated planar multiplier device and its performance as a 220 GHz tripler is presented. A new split-waveguide block design has been used to provide the proper embedding impedances to the device. The performance over 200-240 GHz has been measured and the integrated bbBNN device is shown to provide as much as 734 microwatts output power. A flange-to-flange tripling efficiency of 7% has been obtained. This is believed to be the highest conversion efficiency yet reported for all planar tripler at this frequency. The performance is expected to be improved further with minor changes to the device and circuit parameters.

interstellar↗

NASA NTRS2013

An All-Solid-State, Room-Temperature, Heterodyne Receiver for Atmospheric Spectroscopy at 1.2 THz

Heterodyne receivers at submillimeter wavelengths have played a major role in astrophysics as well as Earth and planetary remote sensing. All-solid-state heterodyne receivers using both MMIC (monolithic microwave integrated circuit) Schottky-diode-based LO (local oscillator) sources and mixers are uniquely suited for long-term planetary missions or Earth climate monitoring missions as they can operate for decades without the need for any active cryogenic cooling. However, the main concern in using Schottky-diode-based mixers at frequencies beyond 1 THz has been the lack of enough LO power to drive the devices because 1 to 3 mW are required to properly pump Schottky diode mixers. Recent progress in HEMT- (high-electron-mobility- transistor) based power amplifier technology, with output power levels in excess of 1 W recently demonstrated at W-band, as well as advances in MMIC Schottky diode circuit technology, have led to measured output powers up to 1.4 mW at 0.9 THz. Here the first room-temperature tunable, all-planar, Schottky-diode-based receiver is reported that is operating at 1.2 THz over a wide (≈20%) bandwidth. The receiver front-end (see figure) consists of a Schottky-diode-based 540 to 640 GHz multiplied LO chain (featuring a cascade of W-band power amplifiers providing around 120 to 180 mW at W-band), a 200-GHz MMIC frequency doubler, and a 600-GHz MMIC frequency tripler, plus a biasable 1.2-THz MMIC sub-harmonic Schottky-diode mixer. The LO chain has been designed, fabricated, and tested at JPL and provides around 1 to 1.5 mW at 540 o 640 GHz. The sub-harmonic mixer consists of two Schottky diodes on a thin GaAs membrane in an anti-parallel configuration. An integrated metal insulator metal (MIM) capacitor has been included on-chip to allow dc bias for the Schottky diodes. A bias voltage of around 0.5 V/diode is necessary to reduce the LO power required down to the 1 to 1.5 mW available from the LO chain. The epilayer thickness and doping profiles have been specifically optimized to maximize the mixer performance beyond 1 THz. The measured DSB noise temperatures and conversion losses of the receiver are 2,000 to 3,500 K and 12 to 14 dB, respectively, at 120 K, and 4,000 to 6,000 K and 13 to 15 dB, respectively, at 300 K. These results establish the state-of-the-art for all-solid-state, all-planar heterodyne receivers at 1.2 THz operating at either room temperature or using passive cooling only. Since no cryogenic cooling is needed, the receiver is eminently suited to atmospheric heterodyne spectroscopy of the outer planets and their moons.

Siles, Jose V.↗

NASA NTRS1992

Negative Differential Resistance (NDR) frequency conversion with gain

The dependence of the I-V characteristic of the negative differential resistance (NDR) devices on the power level and frequency of the rf input signal has been theoretically analyzed with a modified large- and small-signal nonlinear circuit analysis program. The NDR devices we used in this work include both the tunnel diode (without the antisymmetry in the I-V characteristic) and resonant-tunneling devices (with the antisymmetry in the I-V characteristic). Absolute negative conductance can be found from a zero-biased resonant tunneling device when the applied pump power is within a small range. This study verifies the work of Sollner et al. Variable negative conductances at the fundamental and harmonic frequencies can also be obtained from both the unbiased and biased tunnel diodes. The magnitude of the negative conductances can be adjusted by varying the pump amplitude -- a very useful circuit property. However, the voltage range over which the negative conductance occurs moves towards the more positive side of the voltage axis with increasing frequency. Furthermore, the range of the pumping amplitude to obtain negative conductance varies with the parasitics (resistance and capacitance) of the device. The theoretical observation of the dependence of the I-V characteristic of the NDR devices on the power and frequency of the applied pump signal is supported by the experimental results. In addition, novel functions of a NDR device such as self-oscillating frequency multiplier and mixer with gain have been experimentally demonstrated. The unbiased oscillator have also been successfully realized with a NDR device with an antisymmetrical I-V characteristic. Finally, the applications of these device functions will be discussed.

Hwu, R. J.↗