Search NASA⌕ Search

SEARCH · Search NASA

Results for “pulse power system switches”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Pulse charging system

A system, method, and apparatus for pulsed charging applications comprises a bulk capacitor operably connected to a power source, an inductor connected to the bulk capacitor with a charge switch, a pulse capacitor connected to the inductor, a freewheeling diode connecting a point between the charge switch and the inductor to a point after the pulse capacitor, a second diode connecting the inductor to the pulse capacitor, and a pulse switch connecting the pulse capacitor to a load.

42 ENGINEERING↗
DOE OSTI2025

Wide-Bandgap Semiconductor Amplifiers for Fusion Plasma Heating and Control

This paper discusses power electronics developed under the ARPA-E GAMOW program to support nuclear fusion power production. The goal of this project was to develop and assess the potential for wide-bandgap (WBG) semiconductor devices in power electronics to enable high-efficiency and high-voltage solid-state systems for fusion plasma generation, heating, and control. The power electronics use an architecture in which multiple high-power boards can be combined to produce megawatt-level power, where using multiple boards provides high reliability. Two main areas of power electronics boards are developed in this project for fusion plasma heating and control applications: (1) pulse generation and control and (2) radiofrequency generation. The first area is for boards capable of driving high-voltage millisecond pulses at high duty cycles. The envisioned application of these pulses is in plasma control of magnetohydrodynamic instabilities, plasma position, and edge-localized modes. Pulse-width modulation allows for the implementation of a wide variety of linear and nonlinear control systems. The boards developed for this project could actuate control coils based on digital input signals and can be parallelized to provide megawatts of output power. The design of the pulse generator is a low-side load switch. A load switch was designed and constructed that utilized 2-kV-rated field-effect transistor (FET)-based cascodes developed by Qorvo under this project to perform initial testing of these cascodes. The second area is being implemented using class E amplifiers with WBG devices and a reactance steering network to handle inductive or capacitive plasma loads. Applications include ion cyclotron resonance heating (ICRH) and high-harmonic fast-wave (HHFW) heating. A class E reactance steering network is demonstrated in modeling and experiment with a resistive-inductive load that models an inductively-coupled plasma. Power combining of boards with class E reactance steering networks is also simulated and demonstrated experimentally, to enable scaling up to high power. Modeling of high-power-density cooling and remaining useful life is conducted to enable reliable, effectively cooled high-power electronics for fusion applications.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2023

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities

A wide range of utility applications require controllable switches with features such as high-voltage blocking and high-current carrying capacity, especially at high pulse width modulation (PWM) frequency. Low- and medium-voltage utility applications such as motor drives and flexible AC transmission systems as well as solid state transformers could also benefit from a low-cost high-voltage switching module. Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) metal oxide semiconductor field effect transistors (MOSFETs) are considered to be the present and next-generation device choices, although they have limitations. For relatively high-voltage applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low-voltage regime. This manuscript proposes a new half-bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in high-voltage applications. Constructed from bare SiC dies, this half-bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold, and cooling, (3) integrated gate driver module with pulse width modulation (PWM) over wi-fi to eliminate the need for low-voltage signals, (4) wireless power transfer (WPT)-enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state-of-health (SOH) estimator module. The entire architecture has been designed and built at the National Renewable Energy Laboratory (NREL) in Golden, CO.

Ga2O3 devices↗
DOE OSTI2025

Design and Preliminary Experimental Results on a Uniform-Field Test Fixture for Power Flow Experiments

Electrodes that produce a uniform electric field across their surfaces are desired for a variety of high-voltage systems including spark-gap switches and transversely excited atmospheric lasers. Here, the implementation of uniform-field electrodes to a parallel-plate load is described for the study of vacuum power flow under pulsed-power applications. We begin with an overview of general uniform-field geometries, and provide an open-source program that generates these geometries as described by Ernst. Following that, a modification to an existing power-flow experimental platform, that adopts a uniform-field geometry, is introduced and its utility is described. Lastly, preliminary experimental results are presented and future steps are outlined.

Capacitors↗
DOE OSTI2024

Heterogeneous Integration Technologies for High-temperature, High-density, Low-profile Power Modules of Wide Bandgap Devices in Electric Drive Applications (Final Technical Report)

The goal of this project is to develop packaging technologies for making high-temperature, high-density, and low-profile wide-bandgap (WBG) power electronics modules for electric drives. These modules are aimed at enabling the DOE’s University Consortium to reach its 2025 inverter targets of ≥ 100 kW/L and ≤ 2.7 $/kW. The specific objectives are to: design and fabricate SiC half-bridge power modules with double-sided cooling and parasitic inductances < 5 nH, heat flux density > 400 W/cm 2 , and working junction temperature of 200 o C; design, fabricate, and deliver a gate driver with double-sided cooled modules for the construction of a 100 kW/L inverter at Oak Ridge National Lab; and design and prototype intelligent gate drivers with integrated current sensor and a low-profile DC-DC power supply with air-core transformer for testing power modules at 200 o C junction temperature. We followed an iterative technical approach of design, simulation, fabrication, and testing of various versions of modules, current sensors, and power supply. The state-of-the-art silicon carbide devices rated at 1.2 kV and 149 A were packaged by sintered-silver bonding on an aluminum nitride direct-bond-copper substrate for high thermal conductivity, high working temperature, and high joint reliability. Porous silver posts were used to interconnect the device’s source pads to the other direct-bond-copper substrate for low mechanical stresses, ease of manufacturing, and double-sided cooling. A current sensor based on package parasitic inductance was developed to measure switching current. A dynamic feedback scheme was developed to compensate the effect of parasitic resistance and temperature variation. A constant-current class-E dc-dc converter with air-core transformer was developed. Air-core transformer was used due to the unavailability of magnetic core at high temperatures. Gate driver and power supply were integrated with the double-side cooled, high temperature SiC power modules for testing the modules at 200 o C junction temperature. Double-pulse and continuous testing of the integrated technologies validated the design and fabrication of the three component technologies. Throughout the project, we overcame the challenge for design verification caused by low prototyping yield, which then helped train the graduate students, the future workforce, to learn the engineering know-how for low-cost manufacturing of reliable products. Below is a summary of the major accomplishments of this project: development of a prototyping process for fabricating double-side cooled (1200 V, 149 A) SiC phase-leg modules capable of working to 200 o C Tj; simulation and experimental verification of the improvement of thermo-mechanical reliability of the double-side cooled SiC phase-leg module by using rigid encapsulant; design and experimental validation of a current sensor based on package parasitic inductance and a compensation solution for eliminating the effect of parasitic resistance; design and experimental validation of a low-profile power supply with six-output air-core transformer for gate driver; functional demonstration of a SiC phase-leg module integrated with its gate driver, current sensor, and an air-core power supply at 200 o C Tj in a double-pulse switching test setup and Buck converter continuous test setup; successful completion of six PhD and two MS students who are or will work at Apple Inc., Tesla Inc., Wolfspeed Inc., Microchip Inc., Monolithic Power Systems Inc., and LG Magna Inc.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2023

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities: Preprint

A wide range of utility applications require controllable switches with features such as high-voltage (HV) blocking and high-current carrying capacity especially at high pulse width modulation (PWM) frequency. Low and medium voltage utility applications such as motor drives and flexible AC transmission systems (FACTS) as well as solid state transformers (SST) could also benefit from a low-cost HV switching module. Wide band gap (WBG) semiconductors such as SiC and GaN MOSFETs are considered to be the present and next generation device choices, although they have their own limitations. For relatively HV applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low voltage regime. This manuscript proposes a new half bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in HV applications. Constructed from bare SiC dies, this half bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold and cooling, (3) integrated gate driver module with PWM over wi-fi to eliminate the need for low voltage signals, (4) wireless power transfer (WPT) enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state of health (SOH) estimator module onboard. The entire architecture has been designed and built at National Renewable Energy Laboratory (NREL), Golden, CO.

baseplate design↗
DOE OSTI2024

Wireless Pulse-Width Modulation Control of Power Converters Using Ultra-Wideband Technology for Distributed High-Voltage Systems: Preprint

In this study, we present a new approach for wireless pulse-width modulation (PWM) control of a power converter, applicable to numerous power converters within a complex electrical distribution system. This method eliminates the need for multiple physical connections of gating/PWM signals among distributed converter modules. By using ultra-wideband-based communication, the PWM control signals can be wirelessly transmitted from a central controller to multiple converters simultaneously and seamlessly. System stability is thoroughly analyzed, and experimental results validate the efficacy of the wireless control scheme for a buck converter operating at a 50-kHz switching frequency. The minimum latency obtained from this setup is 5.38 mus. This control concept offers easier implementation of distributed control in high-voltage power systems, especially in multilevel architectures, even under harsh conditions with ambient noise.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2025

Wireless Pulse-Width Modulation Control of Power Converters Using Ultra-Wideband Technology for Distributed High-Voltage Systems

In this study, we present a new approach for wireless pulse-width modulation (PWM) control of a power converter, applicable to numerous power converters within a complex electrical distribution system. This method eliminates the need for multiple physical connections of gating/PWM signals among distributed converter modules. By using ultra-wideband-based communication, the PWM control signals can be wirelessly transmitted from a central controller to multiple converters simultaneously and seamlessly. System stability is thoroughly analyzed, and experimental results validate the efficacy of the wireless control scheme for a buck converter operating at a 50-kHz switching frequency. The minimum latency obtained from this setup is 5.38 ..mu..s. This control concept offers easier implementation of distributed control in high-voltage power systems, especially in multilevel architectures, even under harsh conditions with ambient noise.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

Greater than Five-Order-of-Magnitude Postcompression Temporal Contrast Improvement with an Ionization Plasma Grating

High-intensity lasers require suppression of prepulses and other nonideal temporal structure to avoid target disruption before the arrival of the main pulse. Here, to address this, we demonstrate that ionization gratings act as a controllable optical switch for high-power light with a temporal contrast improvement of at least 3 ×10 5 and a switching time less than 500 fs. We also show that a grating system can run for hours at 10 Hz without degradation. The contrast improvement from an ionization grating compares favorably to that achievable with plasma mirrors.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

High power actively Q-switched downhole LIBS analysis systems

An actively Q-switched laser induced breakdown spectroscopy (LIBS) probe, utilizing an optical fiber, a pump beam transmitted through the optical fiber, a coupler, and a lens for collimating the pump beam. The actively Q-switched laser, coupled to a sensor which provides information to a computer that controls a high voltage pulser providing a pulse to a Pockels cell located within the laser which can selectively cause the laser to pulse, resulting in high energy pulses and a second lens for focusing the output pulse such that it creates a plasma or spark. The light from the spark is captured and directed back through an optical system to remote equipment for elemental and/or molecular analysis.

McIntyre, Dustin Langdon↗
DOE OSTI2021

A Novel Decentralized PWM Interleaving Technique for Ripple Minimization in Series-Stacked DC-DC Converters

Cascaded dc-dc converters are commonly used in applications where distributed energy sources or loads are connected to elevated voltage levels for power transfer. In such systems, it is advantageous to minimize the ripple on the bus current and voltage by proper phase shifting of the pulse-width modulation (PWM) pulses among the converters via a method known as interleaving. Existing approaches use either a centralized controller or separate communication lines among the stacked converters to control their relative PWM switch transitions. The key drawbacks are that these methods entail significant wiring, the central controller acts as a single point of failure, and implementation on very large numbers of units is impractical. In this paper, we introduce a decentralized interleaving control (DIC) strategy that acts on local current measurements at every converter and achieves communication-free PWM interleaving among the series-stacked converters. The proposed controller is simple in structure and is shown to converge asymptotically to the interleaved state irrespective of clock drifts among the digital signal processors. Experimental results are provided for a system of five series-connected converters showing a 10× reduction in the current ripple compared to normal operation.

cascaded converter↗
DOE OSTI2021

A Novel Decentralized PWM Interleaving Technique for Ripple Minimization in Series-Stacked DC-DC Converters: Preprint

Cascaded dc-dc converters are commonly used in applications where distributed energy sources or loads are connected to elevated voltage levels for power transfer. In such systems, it is advantageous to minimize the ripple on the bus current and voltage by proper phase shifting of the pulse-width modulation (PWM) pulses among the converters via a method known as interleaving. Existing approaches use either a centralized controller or separate communication lines among the stacked converters to control their relative PWM switch transitions. The key drawbacks are that these methods entail significant wiring, the central controller acts as a single point of failure, and implementation on very large numbers of units is impractical. In this paper, we introduce a decentralized interleaving control (DIC) strategy that acts on local current measurements at every converter and achieves communication-free PWM interleaving among the series-stacked converters. The proposed controller is simple in structure and is shown to converge asymptotically to the interleaved state irrespective of clock drifts among the digital signal processors. Experimental results are provided for a system of five series-connected converters showing a 10 times reduction in the current ripple compared to normal operation.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2026

Electrode Erosion and Prefire Studies Towards Fusion Scale Pulsed Power

This study presents a comprehensive investigation of electrode erosion and discharge behavior in spark gap switches over long switching cycle lifetimes. Brass, copper–tungsten (CuW), and stainless steel electrodes are tested under controlled conditions to quantify material degradation, debris accumulation, and changes in breakdown voltage. High-resolution imaging and statistical analysis of spark channel locations and gap breakdown voltages reveal how surface evolution influences long-term performance and reliability. These results provide essential data for lifetime modeling and inform design strategies for pulsed power systems in emerging applications such as private sector fusion energy and large-scale facilities like Sandia’s Z Machine and proposed ZX upgrades, where high repetition reliability and predictable behavior are critical.

electrical breakdown↗
DOE OSTI2024

Electron Density Measurements Using USPR (Final Scientific/Technical Report)

UC Davis has fabricated an ultrashort pulse reflectometer (USPR) diagnostic instrument for electron density profile measurements on compact, short duration, magnetically-confined fusion-energy concept devices such as spheromaks and FRCs. The USPR system transmits extremely short duration (~few nsec) chirped waveforms that together span 29 to 75 GHz. These chirped waveforms illuminate and reflect from the target plasma, with each frequency component reflecting from a different density layer (higher frequencies probe deeper into the plasma before reflecting). The reflected waveforms are split into roughly 42 different frequencies; time-of-flight (TOF) measurements made at each frequency with high resolution (~25 psec measurement resolution which corresponds to ~5 mm). These TOF data may then be inverted via software to generate electron density profiles with high time resolution (~10 μsec). At the heart of the system is a field programmable gate array (FPGA) based controller which collects and processes all of the USPR data in addition to generating all of the control signals required for maximum flexibility. The FPGA controller has the software flexibility to be easily reconfigured for different plasma devices, and the entire system sufficiently compact to be easily and quickly transported between devices. A high speed impulse generator was transformed into a set of three ultrashort pulse transmitter chirps using a combination of dispersive waveguide, frequency doublers and high-pass filters. A mm-wave controller was fabricated to sequentially switch between the three chirps, directing the chirps one-by-one to three different mm-wave assemblies spanning 29-75 GHz. Each mm-wave assembly consists of a high power active multiplier chain which converts the transmitter chirp to higher frequencies, and a broadband mixer which downconverts the reflected waveform to the 2-18 GHz range of the UPSR receiver. The 16-channel receiver (shared by all 3 mm-wave assemblies) was fabricated employing custom TOF modules capable of operating at a high 1 MHz sampling rate. Laboratory testing of the full system revealed the presence of unwanted harmonics from the multiplication process, with interference observed in the downconverted reflections at selected frequency channels that could not be completely filtered out. Additional interference effects arising from internal reflections within the mm-wave assemblies were minimized using a high-speed switch which served to “gate out” much of these reflections. The USPR diagnostic was transported and installed onto the HIT-SIU plasma device, becoming operational on 11/08/2022. Although designed to span 3 distinct mm-wave bands, the HIT-SIU plasmas at this time were sufficiently low density such that only the lowest of the three bands was likely to have strong plasma reflections. The system was then set to operate on only the lowest band (assembly #1), with data collected every 1 μsec rather than 3 μsec which would have been the case when cycling through all three bands. Connected to HIT-SIU, time-varying plasma reflections were observed on 9 of 16 possible frequency channels. Close examination of the data collected revealed issues previously unobserved in laboratory testing, associated with (a) reflections from the small aperture horns required for operation within the HIT-SIU device, and (b) a dependence of the recorded TOF with the threshold voltage of a given channel. Plans were made to address each of these issues before undertaking any future campaigns.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics

Researchers have been extensively studying wide-bandgap (WBG) semiconductor materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size, weight, and power of power electronics beyond current devices based on silicon (Si). However, the increased operating power densities and reduced areal footprints of WBG device technologies result in significant levels of self-heating that can ultimately restrict device operation through performance degradation, reliability issues, and failure. Typically, self-heating in WBG devices is studied using a single measurement technique while operating the device under steady-state direct current measurement conditions. However, for switching applications, this steady-state thermal characterization may lose significance since the high power dissipation occurs during fast transient switching events. Therefore, it can be useful to probe the WBG devices under transient measurement conditions in order to better understand the thermal dynamics of these systems in practical applications. In this work, the transient thermal dynamics of an AlGaN/GaN high electron mobility transistor (HEMT) were studied using thermoreflectance thermal imaging and Raman thermometry. Also, the proper use of iterative pulsed measurement schemes such as thermoreflectance thermal imaging to determine the steady-state operating temperature of devices is discussed. These studies are followed with subsequent transient thermal characterization to accurately probe the self-heating from steady-state down to submicrosecond pulse conditions using both thermoreflectance thermal imaging and Raman thermometry with temporal resolutions down to 15 ns.

42 ENGINEERING↗
DOE OSTI2022

A Prototype High-Voltage Pulsed Power Supply for Control of the ITER Shattered Pellet Injection System Flyer Plate Valve

A high-voltage pulsed power supply (HVPPS) has been designed, prototyped, and tested for driving an eddy current actuated propellant valve for the International Thermonuclear Experimental Reactor (ITER) disruption mitigation system. The high-voltage (HV) dc supply output voltage is software programmable, and the energy storage capacitor bank can be readily reconfigured as 200, 400, 600, and 800 μ F, enabling testing and optimization of both the valve drive and valve systems. Multiple system parameters are monitored before, during, and after each firing of the valve. The system parameters are both displayed and stored for further analysis. Control of the setup, firing sequence, and data collection is automated using a LabVIEW-based control program. The programmability and reconfigurability of this system collectively provide a flexible and robust platform for system refinement and optimization. In this article, a summary of the system will be provided including operational sequences, HV switching and associated triggering methods and circuits, and results measured while firing a solid frozen pellet. Additionally, planned refinement activities toward meeting all requirements for ITER integration will be discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Unfolder-based single-stage AC-AC conversion system

A power converter includes an unfolder connected to a three-phase source and has an output connection with three output terminals. A three-input converter connected to the unfolder produces a quasi-sinusoidal output voltage across converter output terminals. Switches of the converter selectively connect each of the three output terminals across the converter output terminals. A pulse-width modulation controller controls a first duty ratio and a second duty ratio for the converter based on a phase angle of the source and a modulation index generated from an error signal related to a control variable. The duty ratios are time varying at a rate related to a fundamental frequency of the source. The modulation index relates to output voltage of the converter, peak voltage or current of the source and/or peak current at the output terminals.

Teeneti, Chakridhar Reddy↗
DOE OSTI2021

Room temperature, nanosecond, 60 mJ/pulse Fe:ZnSe master oscillator power amplifier system operating at 3.8-5.0 µm

We report on a RT gain-switched Fe:ZnSe master oscillator power amplifier (MOPA) system tunable over 3.8–5.0 µm pumped by radiation of Er:YAG laser operating at 2.94 µm. The mechanically Q-switched Er:YAG laser with output energy up to 220 mJ was used as a pump source for a master oscillator and three-stage power amplifier. The maximum output energies in 200 ns pulses exceeded 60, 56, and 48 mJ at 4.4, 4.3, and 4.1 µm, respectively, under 220 mJ of pump energy. The extraction energy efficiencies were measured to be 25, 30, and 40% at the first, second, and third stages, respectively.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗