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At least 37 records · Page 2

Nonequilibrium chemical potential in a two-dimensional electron gas in the quantum-Hall-effect regime

The nonequilibrium state of a two-dimensional electron gas in the quantum-Hall-effect regime is studied in Hall bars equipped with additional inner contacts situated within the bar. The magnetic-field dependence of the voltage drop between different contact pairs are studied at various temperatures. It was found that the voltage between the inner and outer contacts exhibits peaks of significant amplitude in narrow magnetic-field intervals near integer filling factors. Furthermore, the magnetic-field dependence of the voltage in these intervals exhibits a hysteresis, whereas the voltage between the outer contacts remains zero in the entire magnetic-field range. The appearance of the observed voltage peaks and their hysteretic behavior can be explained by an imbalance between the chemical potentials of edge and bulk states, resulting from nonequilibrium charge redistribution between the edge and bulk states when the magnetic field sweeps under conditions of the quantum Hall effect. The results of the study significantly complement the conventional picture of the quantum Hall effect, explicitly indicating the existence of a significant imbalance at the edge of the two-dimensional electron gas: the experimentally observed difference between the electrochemical potentials of the edge and bulk exceeds the distance between Landau levels by tens of times.

36 MATERIALS SCIENCE↗

Kohn-Sham Theory of the Fractional Quantum Hall Effect

We formulate the Kohn-Sham (KS) equations for the fractional quantum Hall effect by mapping the original electron problem into an auxiliary problem of composite fermions that experience a density dependent effective magnetic field. Self-consistent solutions of the KS equations demonstrate that our formulation captures not only configurations with nonuniform densities but also topological properties such as fractional charge and fractional braid statistics for the quasiparticles excitations. Lastly, this method should enable a realistic modeling of the edge structure, the effect of disorder, spin physics, screening, and of fractional quantum Hall effect in mesoscopic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Density-Functional Theory of the Fractional Quantum Hall Effect

Here, a conceptual difficulty in formulating the density functional theory of the fractional quantum Hall effect is that while in the standard approach the Kohn-Sham orbitals are either fully occupied or unoccupied, the physics of the fractional quantum Hall effect calls for fractionally occupied Kohn- Sham orbitals. This has necessitated averaging over an ensemble of Slater determinants to obtain meaningful results. We develop an alternative approach in which we express and minimize the grand canonical potential in terms of the composite fermion variables. This provides a natural resolution of the fractional-occupation problem because the fully occupied orbitals of composite fermions automatically correspond to fractionally occupied orbitals of electrons. We demonstrate the quantitative validity of our approach by evaluating the density profile of fractional Hall edge as a function of temperature and the distance from the delta dopant layer and showing that it reproduces edge reconstruction in the expected parameter region.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantum Hall effect in a Weyl-Hubbard model: Interplay between topology and correlation

The interplay between topology and electronic correlations offer a rich avenue for discovering emergent quantum phenomena in condensed matter systems. Here, in this work, starting from the Weyl-Hubbard model, we investigate the quantum Hall effect to explore the consequence of onsite Hubbard repulsion on nontrivial Weyl band topology in the presence of an external magnetic field. Within the Gutzwiller projected wavefunction method, we find the system to undergo multiple topological phase transitions by tuning on-site Coulomb interaction, including two distinct Weyl phases with different numbers of Weyl node pairs and a trivial narrow band insulator. Crucially, these two Weyl phases may be identified by the sign of their chiral Landau levels. The possible experimental signature of these topological phases and correlation effects is provided by the magnetic-field dependent quantum Hall conductivity within the Kubo response theory.

36 MATERIALS SCIENCE↗

Three-dimensional quantum Hall effect and metal–insulator transition in ZrTe 5

The discovery of the quantum Hall effect (QHE) in two-dimensional electronic systems has given topology a central role in condensed matter physics. Although the possibility of generalizing the QHE to three-dimensional (3D) electronic systems was proposed decades ago, it has not been demonstrated experimentally. Here we report the experimental realization of the 3D QHE in bulk zirconium pentatelluride (ZrTe 5 ) crystals. We perform low-temperature electric-transport measurements on bulk ZrTe 5 crystals under a magnetic field and achieve the extreme quantum limit, where only the lowest Landau level is occupied, at relatively low magnetic fields. In this regime, we observe a dissipationless longitudinal resistivity close to zero, accompanied by a well-developed Hall resistivity plateau proportional to half of the Fermi wavelength along the field direction. This response is the signature of the 3D QHE and strongly suggests a Fermi surface instability driven by enhanced interaction effects in the extreme quantum limit. By further increasing the magnetic field, both the longitudinal and Hall resistivity increase considerably and display a metal–insulator transition, which represents another magnetic-field-driven quantum phase transition. Lastly, our findings provide experimental evidence of the 3D QHE and a promising platform for further exploration of exotic quantum phases and transitions in 3D systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Domain Textures in the Fractional Quantum Hall Effect

Impacts of domain textures on low-lying neutral excitations in the bulk of fractional quantum Hall effect (FQHE) systems are probed by resonant inelastic light scattering. We demonstrate that large domains of quantum fluids support long-wavelength neutral collective excitations with well-defined wave vector (momentum) dispersion that could be interpreted by theories for uniform phases. Access to dispersive low-lying neutral collective modes in large domains of FQHE fluids such as long wavelength magnetorotons at filling factor v=1/3 offer significant experimental access to strong electron correlation physics in the FQHE.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Fractional Quantum Hall Effect with Unconventional Pairing in Monolayer Graphene

Motivated by the observation of even denominator fractional quantum Hall effect in the n = 3 Landau level of monolayer graphene [Kim et al., Nat. Phys. 15, 154 (2019)], we consider a Bardeen-Cooper-Schrieffer variational state for composite fermions and find that the composite-fermion Fermi sea in this Landau level is unstable to an f-wave pairing. Analogous calculation suggests the possibility of a p-wave pairing of composite fermions at half filling in the n = 2 graphene Landau level, whereas no pairing instability is found at half filling in the n = 0 and n = 1 graphene Landau levels. The relevance of these results to experiments is discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Anderson Localization in the Fractional Quantum Hall Effect

The interplay between interaction and disorder-induced localization is of fundamental interest. This article addresses localization physics in the fractional quantum Hall state, where both interaction and disorder have nonperturbative consequences. We provide compelling theoretical evidence that the localization of a single quasiparticle of the fractional quantum Hall state at filling factor ν=n/(2n+1) has a striking quantitative correspondence to the localization of a single electron in the (n+1)th Landau level. By analogy to the dramatic experimental manifestations of Anderson localization in integer quantum Hall effect, this leads to predictions in the fractional quantum Hall regime regarding the existence of extended states at a critical energy, and the nature of the divergence of the localization length as this energy is approached. Within a mean field approximation, these results can be extended to situations where a finite density of quasiparticles is present.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Topological approach to electron correlations at fractional quantum Hall effect

Highlights: • Braids in 2D electron systems in magnetic field acquire a cyclotron metrics. • Commensurability of 2D braids with Wigner crystal of electrons leads to FQHE. • Homotopy invariants define the hierarchy of FQHE universal in all 2D Hall systems. • Composite fermions illustrate multiloop braids in the simplest homotopy case. • Correlations in FQHE reveal long-range quantum entanglement of all electrons. The classification of homotopy invariants in interacting multi-electron 2D systems at quantizing magnetic fields is presented, explaining the topologically protected correlations occurring at integer and fractional quantum Hall effects. The long-range quantum entanglement is essential for homotopy correlated phases in contrast to the binary entanglement for conventional phases with local order parameters. The classification of homotopy long-range correlated phases induced by the Coulomb interaction of electrons has been derived in terms of homotopy invariants, which are universal and robust against local disorder and single-particle crystal field, as illustrated by experimental observations in various materials with different microscopic structure, like GaAs 2DES, graphene monolayer and bilayer and in Chern topological insulators. The homotopy phases are demonstrated to be topologically protected and immune to single-particle perturbations, temperature chaos and variation of the electron interaction strength. The nonzero repulsive interaction between electrons is shown, however, to be essential for the definition of the homotopy invariants, which disappear in gaseous systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Spectral sum rules and magneto-roton as emergent graviton in fractional quantum Hall effect

Here, we consider gapped fractional quantum Hall states on the lowest Landau level when the Coulomb energy is much smaller than the cyclotron energy. We introduce two spectral densities, ρ T (ω) and $\bar{p}$ T (ω), which are proportional to the probabilities of absorption of circularly polarized gravitons by the quantum Hall system. We prove three sum rules relating these spectral densities with the shift S, the q 4 coefficient of the static structure factor S 4 , and the high-frequency shear modulus of the ground state μ ∞ , which is precisely defined. We confirm an inequality, first suggested by Haldane, that S 4 is bounded from below by |S–1|/8. The Laughlin wavefunction saturates this bound, which we argue to imply that systems with ground state wavefunctions close to Laughlin’s absorb gravitons of predominantly one circular polarization. We consider a nonlinear model where the sum rules are saturated by a single magneto-roton mode. In this model, the magneto-roton arises from the mixing between oscillations of an internal metric and the hydrodynamic motion. Implications for experiments are briefly discussed.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Colloquium : Quantum anomalous Hall effect

The quantum Hall (QH) effect, quantized Hall resistance combined with zero longitudinal resistance, is the characteristic experimental fingerprint of Chern insulators—topologically nontrivial states of two-dimensional matter with broken time-reversal symmetry. In Chern insulators, nontrivial bulk band topology is expressed by chiral states that carry current along sample edges without dissipation. Here, the quantum anomalous Hall (QAH) effect refers to QH effects that occur in the absence of external magnetic fields due to spontaneously broken time-reversal symmetry. The QAH effect has now been realized in four different classes of two-dimensional materials: (i) thin films of magnetically (Cr- and/or V-) doped topological insulators in the (Bi,Sb) 2 T 3 family, (ii) thin films of the intrinsic magnetic topological insulator MnBi 2 Te 4 , (iii) moiré materials formed from graphene, and (iv) moiré materials formed from transition-metal dichalcogenides. In this Colloquium, the physical mechanisms responsible for each class of QAH insulator are reviewed, with both differences and commonalities highlighted, and potential applications of the QAH effect are commented upon.

36 MATERIALS SCIENCE↗

Microwave spectroscopic observation of a Wigner solid within the ν = 1 / 2 fractional quantum Hall effect

We have studied the microwave spectra of a wide quantum well for Landau level fillings, ν, just below 1/2, under conditions where the ν = 1/2 fractional quantum Hall effect (FQHE) is present. One resonance in the spectra exhibits intensity variations with ν in striking agreement with that expected for a pinning mode of a Wigner solid of quasiholes of this FQHE state. This resonance is also quite sensitive to asymmetrization of the growth-direction charge distribution in the quantum well by gate bias. Another resonance in the spectra is associated with a different bilayer Wigner solid that also exists at much lower ν than the 1/2 FQHE, and that appears to coexist with the 1/2 quasihole solid.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Revisiting excitation gaps in the fractional quantum Hall effect

Recent systematic measurements of the quantum well width dependence of the excitation gaps of fractional quantum Hall states in high mobility samples open the possibility of a better quantitative understanding of this important issue. Here we present what we believe to be accurate theoretical gaps including the effects of finite width and Landau level (LL) mixing. While theory captures the width dependence, there still remains a deviation between the calculated and the measured gaps, presumably caused by disorder. It is customary to model the experimental gaps of the n/(2n ± 1) states as Δ n/(2n+1) = Ce 2 /[(2n ± 1)ϵl]-Γ, where ϵ is the dielectric constant of the background semiconductor and l is the magnetic length; the first term is interpreted as the cyclotron energy of composite fermions and Γ as a disorder-induced broadening of composite-fermion LLs. Fitting the gaps for various fractional quantum Hall states, we find that Γ can be nonzero even in the absence of disorder.

36 MATERIALS SCIENCE↗

Fractional Quantum Hall Effect at ν = 2 + 6 / 13 : The Parton Paradigm for the Second Landau Level

Here, the unexpected appearance of a fractional quantum Hall effect (FQHE) plateau at ν = 2 + 6/13 offers a clue into the physical mechanism of the FQHE in the second Landau level (SLL). Here we propose a “ $\bar{3}$ $\bar{2}$111” parton wave function, which is topologically distinct from the 6/13 state in the lowest Landau level. We demonstrate the $\bar{3}$ $\bar{2}$111 state to be a good candidate for the ν = 2 + 6/13 FQHE, and make predictions for experimentally measurable properties that can reveal the nature of this state. Furthermore, we propose that the “n$\bar{2}$111” family of parton states naturally describes many observed SLL FQHE plateaus.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures

The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n-InGaAs/InAlAs heterostructures at temperatures of T = (1.8–30) K in magnetic fields up to B = 9 T. Temperature-induced transport in the region of the longitudinal resistance minima, corresponding to the plateau regions at Hall resistance, is investigated within the framework of the concept of hopping conductivity in a strongly localized electron system. The analysis of variable-range hopping conductivity in the region of the second, third, and fourth plateau of the quantum Hall effect provides the possibility of determining the localization length exponent.

36 MATERIALS SCIENCE↗

Particle-Hole Symmetry and the Fractional Quantum Hall Effect in the Lowest Landau Level

Here, we report on detailed experimental studies of a high-quality heterojunction insulated-gate field-effect transistor (HIGFET) to probe the particle-hole symmetry of the fractional quantum Hall effect (FQHE) states about half-filling in the lowest Landau level. The HIGFET is specially designed to vary the density of a two-dimensional electronic system under constant magnetic fields. We find in our constant magnetic field, variable density measurements that the sequence of FQHE states at filling factors ν = 1/3, 2/5, 3/7… and its particle-hole conjugate states at filling factors 1-ν = 2/3, 3/5, 4/7… have a very similar energy gap. Moreover, a reflection symmetry can be established in the magnetoconductivities between the ν and 1-ν states about half-filling. Our results demonstrate that the FQHE states in the lowest Landau level are manifestly particle-hole symmetric.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Theory of the fractional quantum Hall effect in Weyl semimetals

Here, we develop a hydrodynamic field theory of the three-dimensional fractional quantum Hall effect, which was recently proposed to exist in magnetic Weyl semimetals, when the Weyl nodes are gapped by strong repulsive interactions. This theory takes the form of a BF theory, which contains both one-form and two-form gauge fields, coupling to quasiparticle and loop excitations, respectively. It may be regarded as a generalization of the Chern-Simons theory of two-dimensional fractional quantum Hall liquids to three dimensions.

Thakurathi, Manisha↗