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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Optimal strategies for optical quantum memories using long-lived noble-gas spins

Nuclear spins of noble gases exhibit exceptionally long coherence times and can potentially serve as a long-lived storage medium for quantum information. We analyze and compare the performance of two mechanisms for mapping the quantum state of light onto the collective spin state of noble gases. The first mechanism utilizes collisional exchange with the electronic spin state of metastable noble-gas atoms, while the second relies on spin-exchange collisions with ground-state alkali-metal atoms. We describe the operation of an optical quantum memory relying on these two mechanisms using a compact model and study strategies that optimize the memory storage efficiency. Through numerical simulations, we identify optimal sequences for storing optical signals with different signal bandwidths and electronic spin relaxation rates. This work highlights the qualitative difference between the two approaches for using noble gases as long-lived quantum memories at noncryogenic conditions and outlines the regimes in which they are expected to be efficient.

atomic ensemble↗
DOE OSTI2017

Off-resonant Raman quantum memory in impurity crystals: signal-to-noise ratio analysis

The possibility of implementing an off-resonant Raman scheme of optical quantum memory on the basis of an ensemble of three-level atoms is investigated under the condition of equal polarisations of resonant transitions forming the Λ-scheme. The developed model is used to analyse the signal-to-noise ratio at the output of an optical quantum memory device in {sup 143}Nd{sup 3+} : Y {sup 7}LiF{sub 4}. It is shown that this ratio can significantly exceed unity for single-photon input pulses. The required values of the parameters can be obtained by using an impurity crystal in the form of a whispering-gallery mode ring resonator. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Surpassing millisecond coherence in on chip superconducting quantum memories by optimizing materials and circuit design

The performance of superconducting quantum circuits for quantum computing has advanced tremendously in recent decades; however, a comprehensive understanding of relaxation mechanisms does not yet exist. In this work, we utilize a multimode approach to characterizing energy losses in superconducting quantum circuits, with the goals of predicting device performance and improving coherence through materials, process, and circuit design optimization. Using this approach, we measure significant reductions in surface and bulk dielectric losses by employing a tantalum-based materials platform and annealed sapphire substrates. With this knowledge we predict the relaxation times of aluminum- and tantalum-based transmon qubits, and find that they are consistent with experimental results. We additionally optimize device geometry to maximize coherence within a coaxial tunnel architecture, and realize on-chip quantum memories with single-photon Ramsey times of 2.0 – 2.7 ms, limited by their energy relaxation times of 1.0 – 1.4 ms. These results demonstrate an advancement towards a more modular and compact coaxial circuit architecture for bosonic qubits with reproducibly high coherence.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Nanometer scale nonvolatile memory device and method for storing binary and quantum memory states

Example implementations include an electronic memory device with a metallic layer having a first planar crystalline structure, a first encapsulating layer including an encapsulating material having a second planar crystalline structure, and disposed adjacent to a first planar surface of the metallic layer, and a second encapsulating layer including the encapsulating material, and disposed adjacent to a second planar surface of the metallic layer. Example implementations also include a method of depositing graphite crystals onto a substrate to form a gate bottom layer, depositing BN crystals onto the graphite bottom layer to form a BN bottom layer, depositing tungsten ditelluride (WTe2) crystals onto the BN bottom layer to form a metallic layer, depositing the BN crystals onto the BN bottom layer and the metallic layer to form a BN top layer, and depositing the graphite crystals onto the BN top layer to form a gate top layer.

Xiao, Jun↗
DOE OSTI2017

A single-atom quantum memory in silicon

Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a ‘quantum memory’ while idle. The 31 P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the 31 P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically-enriched 28 Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity Fp ! 81%, a memory fidelity Fm ! 92%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following highpower radiofrequency pulses.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2018

Generation of narrow-band single-photon states via spontaneous parametric down-conversion for quantum memories in doped crystals

We present experimental results on the generation of narrow-band single-photon states via cavity-enhanced spontaneous parametric down-conversion in a PPLN crystal and demonstrate the feasibility of conditional preparation of single 867-nm photons with a 70-MHz linewidth, compatible with optical quantum memory devices based on Nd{sup 3+}-doped isototopically pure Y{sup 7}LiF{sub 4} crystals. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Enhancing quantum memory lifetime with measurement-free local error correction and reinforcement learning

Reliable quantum computation requires systematic identification and correction of errors that occur and accumulate in quantum hardware. To diagnose and correct such errors, standard quantum error-correcting protocols utilize global error information across the system obtained by mid-circuit readout of ancillary qubits. We investigate circuit-level error-correcting protocols that are measurement-free and based on local error information. Such a local error correction (LEC) circuit consists of faulty multi-qubit gates to perform both syndrome extraction and ancilla-controlled error removal. We develop and implement a reinforcement learning framework that takes a fixed set of faulty gates as inputs and outputs an optimized LEC circuit. To evaluate this approach, we quantitatively characterize an extension of logical qubit lifetime by a noisy LEC circuit. For the two-dimensional (2D) classical Ising model and four-dimensional toric code, our optimized LEC circuit performs better at extending a memory lifetime compared with a conventional LEC circuit based on Toom's rule in a subthreshold gate error regime. We further show that such circuits can be used to reduce the rate of mid-circuit readouts to preserve a 2D toric code memory. Lastly, we discuss the application of the LEC protocol on dissipative preparation of quantum states with topological phases.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2019

Context-aware quantum simulation of a matrix stored in quantum memory

In this paper, a storage method and a context-aware circuit simulation idea are presented for the sum of block diagonal matrices. Additionally, using the design technique for a generalized circuit for the Hamiltonian dynamics through the truncated series, we generalize the idea to (0–1) matrices and discuss the generalization for the real matrices. The presented circuit requires O(n) number of quantum gates and yields the correct output with the success probability depending on the number of elements: For matrices with poly(n), the success probability is 1 / poly(n). Since the operations on the circuit are controlled by the data itself, the circuit can be considered as a context-aware computing gadget. In addition, it can be used in variational quantum eigensolver and in the simulation of molecular Hamiltonians.

97 MATHEMATICS AND COMPUTING↗