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DOE OSTI2026

Uranium Doped Gallium Nitride Epitaxial Thin Films

Gallium nitride (GaN) is near ubiquitous in modern day technologies, forming the backbone of solid-state lighting and high-power electronics. Engineering the physical properties of GaN has been investigated to some degree by the incorporation or doping of most of the elements of the periodic table, but the actinides remain unexplored. Molecular beam epitaxy is used to demonstrate uranium doping of GaN single crystals. High structural quality of the host matrix is maintained despite partial elemental segregation of the uranium dopant into 1D structures at the levels presented here. Electronic transport measurements reveal relatively high conductivity, which persists down to cryogenic temperature and is characterized by the formation of narrow gaps in the electronic band structures very close to the Fermi level. Photoluminescence measurements reveal that the U-doped GaN exhibits optical behavior similar to that of the GaN substrate. The addition of actinide materials to a non-centrosymmetric, optically active, radiation-hard, and electronically tunable host matrix opens a world of possibilities for investigating and leveraging elements with high electron correlations in the pursuit of novel devices.

36 - MATERIALS SCIENCE↗

DOE OSTI2025

SUDA: A SUrface Dust Analyser for Compositional Mapping of the Galilean Moon Europa

Abstract The Surface Dust Analyser (SUDA) is a mass spectrometer onboard the Europa Clipper mission for investigating the surface composition of the Galilean moon Europa. Atmosphereless planetary moons such as the Galilean satellites are wrapped into a ballistic dust exosphere populated by tiny samples from the moon’s surface produced by impacts of fast micrometeoroids. SUDA will measure the composition of such surface ejecta during close flybys of Europa to obtain key chemical signatures for revealing the satellite’s composition such as organic molecules and salts, history, and geological evolution. Because of their ballistic orbits, detected ejecta can be traced back to the surface with a spatial resolution roughly equal to the instantaneous altitude of the spacecraft. SUDA is a Time-Of-Flight (TOF), reflectron-type impact mass spectrometer, optimized for a high mass resolution which only weakly depends on the impact location. The instrument will measure the mass, speed, charge, elemental, molecular, and isotopic composition of impacting grains. The instrument’s small size of$268 ~\mathrm {mm} \times 250 ~\mathrm {mm} \times 171$ 268 mm × 250 mm × 171 $~\mathrm {mm}$ mm , radiation-hard design, and rather large sensitive area of 220 cm 2 matches well the challenging demands of the Clipper mission.

Astronomy & Astrophysics↗

DOE OSTI2025

Prediction of Alpha-Particle-Immune Gate-All-Around Field-Effect Transistors (GAA-FET) Based SRAM Design

Alpha particles are known to be a major source of particles creating soft errors in semiconductor devices, such as content flipping in Static Random-Access Memory (SRAM). Recent advancements in transistor nodes have led to the introduction of Gate-All-Around Field Effect Transistors (GAA-FETs), which have better gate control, thus better electrostatics. Moreover, the introduction of bottom dielectric isolation (BDI) eliminates substrate leakage and thus is expected to enhance its radiation hardness. It is thus important to explore if one can design an SRAM that is completely radiation-hard to alpha particles. In this paper, using 3D Technology Computer-Aided-Design (TCAD) simulations, we show that it is possible to design an SRAM using GAA-FET technology so that it is immune to single alpha particle radiation error. In other words, with the design, there will be no single-event upset (SEU) due to alpha particles. We first use ab initio calculations in PHITS to show that there is a maximum linear energy transfer (LET), LET max , for the alpha particle in Si and Si x Ge 1-x . Based on that, by de signing a sub-7nm GAA-FET-based SRAM with BDI, we show that the SRAM does not flip even if the particle strike is in the worst-case scenario for LET > LET max .

42 ENGINEERING↗

DOE OSTI2026

Neutrino Beam Monitoring

Accelerator facilities produce neutrino beams from meson decays in a decay volume. Experiments measure event rates that depend on flux, cross sections, and detector response, so the flux is predicted using hadron production and beamline modeling and constrained by beam instrumentation, since near detectors alone cannot separate flux from cross section. Proton, hadron, and muon monitors can track the parent particle distributions and beam conditions, providing the inputs needed for flux predictions in long-baseline experiments such as NOvA, T2K, and DUNE. This talk reviews how beam monitors are used in practice to understand neutrino flux. Proton beam monitors tell where the beam hits the target and how stable it is. Farther downstream, hadron and muon monitors sample particles produced in meson decays. Because those muons come from the same parents as the neutrinos, their profiles reveal focusing, alignment shifts, and other changes in the beam, and they are routinely used to detect problems and guide flux predictions. The muon information can be used more quantitatively; for example, to infer the parent meson phase space, and fast radiation-hard timing detectors can add sensitivity to the momentum dependence of the focusing. These developments show both how tightly beam measurements can constrain the flux and where the current limits still lie. These approaches complement monitored-beam concepts, in which the decay region is instrumented to detect charged leptons from meson decays and to measure the neutrino flux directly.

Ganguly, Sudeshna [Fermilab] (ORCID:00000003163482↗

DOE OSTI2026

Neutrino Beam Monitoring

Ganguly, Sudeshna [Fermilab] (ORCID:00000003163482↗

DOE OSTI2025

Crystal Calorimetry for Charged Lepton Flavor Violation Searches

The Mu2e experiment at Fermilab aims to search for Charged Lepton Flavor Violation (CLFV) through the coherent conversion of a muon into an electron in the field of an aluminum nucleus. This process, highly suppressed in the Standard Model, would clearly indicate new physics if observed. A crucial component of Mu2e is its electromagnetic calorimeter, which enhances the identification and measurement of conversion electrons. The calorimeter consists of two disks of undoped CsI crystals read out by custom-designed SiPMs and fast front-end electronics. This paper presents an overview of the calorimeter’s design, its custom SiPM technology, the readout and data acquisition system, and the results from commissioning tests.Building on the experience from Mu2e, the proposed Mu2e-II upgrade aims to enhance further the experiment’s sensitivity by an order of magnitude. This requires significant advancements in calorimeter technology, particularly in crystal materials and photodetector performance. Studies on BaF$_2$ and LYSO crystals, as well as the development of radiation-hard Silicon Photomultipliers (SiPMs), are currently underway. Test beam results demonstrate promising improvements in energy resolution and timing capabilities, ensuring the feasibility of next-generation calorimetry solutions for Mu2e-II.

Atanov, N. [Dubna, JINR]↗

NASA NTRS1981

A radiation-hardened star scanner for spacecraft guidance and control

A star scanner for the Galileo Project is described. Because it must function in the intense Jupiter radiation field, which consists primarily of high-energy electrons and protons, this star scanner is designed with radiation-hardness as a prime objective. The optics and the multiplier phototube are specially designed to minimize fluorescence and Cerenkov effects, and the electronic components to minimize ionization and displacement damage. The star-scanner layout provides maximum shielding for the optics and phototube. Test results predict successful operation in the expected Jovian radiation environment.

Birnbaum, M. M.↗

NASA NTRS1983

Growth and characterization of Czochralski-grown n and p-type GaAs for space solar cell substrates

Progress in LEC (liquid encapsulated Czochralski) crystal growth techniques for producing high-quality, 3-inch-diameter, n- and p-type GaAs crystals suitable for solar cell applications is described. The LEC crystals with low dislocation densities and background impurities, high electrical mobilities, good dopant uniformity, and long diffusion lengths were reproducibly grown through control of the material synthesis, growth and doping conditions. The capability for producing these large-area, high-quality substrates should positively impact the manufacturability of highly efficiency, low cost, radiation-hard GaAs solar cells.

Chen, R. T.↗

NASA NTRS1983

A sun acquisition sensor for spacecraft guidance and control

The combination of a strap-down analog sun acquisition sensor (AS) and an on-board digital programmable signal processor results in a versatile guidance and control system. The combination can orient the rotation axis of a spin-stabilized spacecraft to the sun no matter what the initial attitude of the spacecraft. During the sun orientation process, spacecraft spin rate can be sensed and supplied as an input to the control algorithm. If needed, the AS-signal processor combination can be used to perform a rhumb-line turn maneuver. In case of unexpected spacecraft operating conditions, or unplanned pointing directions, the signal processor program can be updated via earth-based transmission of another program to cover the new situation. Using only three radiation-hard cadmium-sulfide detectors, containing no moving parts, needing only a few microwatts of power, included in a volume of 550 cubic cm (a redundant pair), and weighing only 540 grams, the AS is a small, simple, sturdy sensing device.

Birnbaum, M. M.↗

NASA NTRS1984

Study of factors determining the radiation sensitivity of quartz crystal oscillators (A0189)

The correlation between defect cluster concentrations observed for different grades of quartz examined by transmission electron microscopy (TEM) and the electrical stability of quartz resonators exposed to complex radiation in an orbital LDEF was determined. It is demonstrated that the technique TEM provides a powerful method for studying the effect of radiation on crystalline quartz. Two factors suggest that the observed clusters may be responsible for the radiation-induced frequency drift and acoustic absorption effects associated with irradiated quartz resonators: (1) the clusters are expected to be very effective in modifying the piezoelectric properties of quartz because of the large strain fields associated with them; (2) both phenomena appear to be sensitive to the impurity concentration. It is suggested that TEM can be used to classify grades of quartz according to their suitability for use in radiation-hard resonators. This technique may identify the impurities that are responsible and thereby effect an improvement in the stability of quartz oscillators.

Venables, J. D.↗

NASA NTRS1982

Electron lithography STAR design guidelines. Part 2: The design of a STAR for space applications

The STAR design system developed by NASA enables any user with a logic diagram to design a semicustom digital MOS integrated circuit. The system is comprised of a library of standard logic cells and computr programs to place, route, and display designs implemented with cells from the library. Also described is the development of a radiation-hard array designed for the STAR system. The design is based on the CMOS silicon gate technology developed by SANDIA National Laboratories. The design rules used are given as well as the model parameters developed for the basic array element. Library cells of the CMOS metal gate and CMOS silicon gate technologies were simulated using SPICE, and the results are shown and compared.

Trotter, J. D.↗

NASA NTRS1985

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

Li, S. B.↗

NASA NTRS1989

Read disturb errors in a CMOS static RAM chip

Results are reported from an extensive investigation into pattern-sensitive soft errors (read disturb errors) in the TCC244 CMOS static RAM chip. The TCC244, also known as the SA2838, is a radiation-hard single-event-upset-resistant 4 x 256 memory chip. This device is being used by the Jet Propulsion Laboratory in the Galileo and Magellan spacecraft, which will have encounters with Jupiter and Venus, respectively. Two aspects of the part's design are shown to result in the occurrence of read disturb errors: the transparence of the signal path from the address pins to the array of cells, and the large resistance in the Vdd and Vss lines of the cells in the center of the array. Probe measurements taken during a read disturb failure illustrate how address skews and the data pattern in the chip combine to produce a bit flip. A capacitive charge pump formed by the individual cell capacitances and the resistance in the supply lines pumps down both the internal cell voltage and the local supply voltage until a bit flip occurs.

Wood, Steven H.↗

NASA NTRS1990

VIPER project

The VIPER project has so far produced a formal specification of a 32 bit RISC microprocessor, an implementation of that chip in radiation-hard SOS technology, a partial proof of correctness of the implementation which is still being extended, and a large body of supporting software. The time has now come to consider what has been achieved and what directions should be pursued in the future. The most obvious lesson from the VIPER project was the time and effort needed to use formal methods properly. Most of the problems arose in the interfaces between different formalisms, e.g., between the (informal) English description and the HOL spec, between the block-level spec in HOL and the equivalent in ELLA needed by the low-level CAD tools. These interfaces need to be made rigorous or (better) eliminated. VIPER 1A (the latest chip) is designed to operate in pairs, to give protection against breakdowns in service as well as design faults. We have come to regard redundancy and formal design methods as complementary, the one to guard against normal component failures and the other to provide insurance against the risk of the common-cause failures which bedevil reliability predictions. Any future VIPER chips will certainly need improved performance to keep up with increasingly demanding applications. We have a prototype design (not yet specified formally) which includes 32 and 64 bit multiply, instruction pre-fetch, more efficient interface timing, and a new instruction to allow a quick response to peripheral requests. Work is under way to specify this device in MIRANDA, and then to refine the spec into a block-level design by top-down transformations. When the refinement is complete, a relatively simple proof checker should be able to demonstrate its correctness. This paper is presented in viewgraph form.

Kershaw, John↗

NASA NTRS1991

InP/Ga0.47In0.53As monolithic, two-junction, three-terminal tandem solar cells

The work presented has focussed on increasing the efficiency of InP-based solar cells through the development of a high-performance InP/Ga(0.47)In(0.53)As two-junction, three-terminal monolithic tandem cell. Such a tandem is particularly suited to space applications where a radiation-hard top cell (i.e., InP) is required. Furthermore, the InP/Ga(0.47)In(0.53)As materials system is lattice matched and offers a top cell/bottom cell bandgap differential (0.60 eV at 300 K) suitable for high tandem cell efficiencies under AMO illumination. A three-terminal configuration was chosen since it allows for independent power collection from each subcell in the monolithic stack, thus minimizing the adverse impact of radiation damage on the overall tandem efficiency. Realistic computer modeling calculations predict an efficiency boost of 7 to 11 percent from the Ga(0.47)In(0.53)As bottom cell under AMO illumination (25 C) for concentration ratios in the 1 to 1000 range. Thus, practical AMO efficiencies of 25 to 32 percent appear possible with the InP/Ga(0.47)In(0.53)As tandem cell. Prototype n/p/n InP/Ga(0.47)In(0.53)As monolithic tandem cells were fabricated and tested successfully. Using an aperture to define the illuminated areas, efficiency measurements performed on a non-optimized device under standard global illumination conditions (25 C) with no antireflection coating (ARC) give 12.2 percent for the InP top cell and 3.2 percent for the Ga(0.47)In(0.53)As bottom cell, yielding an overall tandem efficiency of 15.4 percent. With an ARC, the tandem efficiency could reach approximately 22 percent global and approximately 20 percent AMO. Additional details regarding the performance of individual InP and Ga(0.47)In(0.53)As component cells, fabrication and operation of complete tandem cells and methods for improving the tandem cell performance, are also discussed.

Wanlaas, M. W.↗

NASA NTRS1990

Fault tolerant, radiation hard, high performance digital signal processor

An architecture has been developed for a high-performance VLSI digital signal processor that is highly reliable, fault-tolerant, and radiation-hard. The signal processor, part of a spacecraft receiver designed to support uplink radio science experiments at the outer planets, organizes the connections between redundant arithmetic resources, register files, and memory through a shuffle exchange communication network. The configuration of the network and the state of the processor resources are all under microprogram control, which both maps the resources according to algorithmic needs and reconfigures the processing should a failure occur. In addition, the microprogram is reloadable through the uplink to accommodate changes in the science objectives throughout the course of the mission. The processor will be implemented with silicon compiler tools, and its design will be verified through silicon compilation simulation at all levels from the resources to full functionality. By blending reconfiguration with redundancy the processor implementation is fault-tolerant and reliable, and possesses the long expected lifetime needed for a spacecraft mission to the outer planets.

Holmann, Edgar↗

NASA NTRS1990

GaAs VLSI for aerospace electronics

Advanced aerospace electronics systems require high-speed, low-power, radiation-hard, digital components for signal processing, control, and communication applications. GaAs VLSI devices provide a number of advantages over silicon devices including higher carrier velocities, ability to integrate with high performance optical devices, and high-resistivity substrates that provide very short gate delays, good isolation, and tolerance to many forms of radiation. However, III-V technologies also have disadvantages, such as lower yield compared to silicon MOS technology. Achieving very large scale integration (VLSI) is particularly important for fast complex systems. At very short gate delays (less than 100 ps), chip-to-chip interconnects severely degrade circuit clock rates. Complex systems, therefore, benefit greatly when as many gates as possible are placed on a single chip. To fully exploit the advantages of GaAs circuits, attention must be focused on achieving high integration levels by reducing power dissipation, reducing the number of devices per logic function, and providing circuit designs that are more tolerant to process and environmental variations. In addition, adequate noise margin must be maintained to ensure a practical yield.

Larue, G.↗

DOE OSTI2025

Quality concerns caused by quality control — deformation of silicon strip detector modules in thermal cycling tests

The ATLAS experiment at the Large Hadron Collider (LHC) is currently preparing to replace its present Inner Detector (ID) with the upgraded, all-silicon Inner Tracker (ITk) for its High-Luminosity upgrade (HL-LHC). The ITk will consist of a central pixel tracker and the outer strip tracker, consisting of about 19,000 strip detector modules. Each strip module is assembled from up to two sensors, and up to five flexes (depending on its geometry) in a series of gluing, wirebonding and quality control steps. During detector operation, modules will be cooled down to temperatures of about -35 °C (corresponding to the temperature of the support structures on which they will be mounted) after being initially assembled and stored at room temperature. In order to ensure compatibility with the detector's operating temperature range, modules are subjected to thermal cycling as part of their quality control process. Ten cycles between -35 °C and +40 °C are performed for each module, with full electrical characterisation tests at each high and low temperature point. As part of an investigation into the stress experienced by modules during cooling, it was observed that modules generally showed a change in module shape before and after thermal cycling. This paper presents a summary of the discovery and understanding of the observed changes, connecting them with excess module stress, as well as the resulting modifications to the module thermal cycling procedure.

47 OTHER INSTRUMENTATION↗