Search NASA⌕ Search

SEARCH · Search NASA

Results for “radiation-hard”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

VIPER project

The VIPER project has so far produced a formal specification of a 32 bit RISC microprocessor, an implementation of that chip in radiation-hard SOS technology, a partial proof of correctness of the implementation which is still being extended, and a large body of supporting software. The time has now come to consider what has been achieved and what directions should be pursued in the future. The most obvious lesson from the VIPER project was the time and effort needed to use formal methods properly. Most of the problems arose in the interfaces between different formalisms, e.g., between the (informal) English description and the HOL spec, between the block-level spec in HOL and the equivalent in ELLA needed by the low-level CAD tools. These interfaces need to be made rigorous or (better) eliminated. VIPER 1A (the latest chip) is designed to operate in pairs, to give protection against breakdowns in service as well as design faults. We have come to regard redundancy and formal design methods as complementary, the one to guard against normal component failures and the other to provide insurance against the risk of the common-cause failures which bedevil reliability predictions. Any future VIPER chips will certainly need improved performance to keep up with increasingly demanding applications. We have a prototype design (not yet specified formally) which includes 32 and 64 bit multiply, instruction pre-fetch, more efficient interface timing, and a new instruction to allow a quick response to peripheral requests. Work is under way to specify this device in MIRANDA, and then to refine the spec into a block-level design by top-down transformations. When the refinement is complete, a relatively simple proof checker should be able to demonstrate its correctness. This paper is presented in viewgraph form.

Kershaw, John↗
NASA NTRS1991

InP/Ga0.47In0.53As monolithic, two-junction, three-terminal tandem solar cells

The work presented has focussed on increasing the efficiency of InP-based solar cells through the development of a high-performance InP/Ga(0.47)In(0.53)As two-junction, three-terminal monolithic tandem cell. Such a tandem is particularly suited to space applications where a radiation-hard top cell (i.e., InP) is required. Furthermore, the InP/Ga(0.47)In(0.53)As materials system is lattice matched and offers a top cell/bottom cell bandgap differential (0.60 eV at 300 K) suitable for high tandem cell efficiencies under AMO illumination. A three-terminal configuration was chosen since it allows for independent power collection from each subcell in the monolithic stack, thus minimizing the adverse impact of radiation damage on the overall tandem efficiency. Realistic computer modeling calculations predict an efficiency boost of 7 to 11 percent from the Ga(0.47)In(0.53)As bottom cell under AMO illumination (25 C) for concentration ratios in the 1 to 1000 range. Thus, practical AMO efficiencies of 25 to 32 percent appear possible with the InP/Ga(0.47)In(0.53)As tandem cell. Prototype n/p/n InP/Ga(0.47)In(0.53)As monolithic tandem cells were fabricated and tested successfully. Using an aperture to define the illuminated areas, efficiency measurements performed on a non-optimized device under standard global illumination conditions (25 C) with no antireflection coating (ARC) give 12.2 percent for the InP top cell and 3.2 percent for the Ga(0.47)In(0.53)As bottom cell, yielding an overall tandem efficiency of 15.4 percent. With an ARC, the tandem efficiency could reach approximately 22 percent global and approximately 20 percent AMO. Additional details regarding the performance of individual InP and Ga(0.47)In(0.53)As component cells, fabrication and operation of complete tandem cells and methods for improving the tandem cell performance, are also discussed.

Wanlaas, M. W.↗
NASA NTRS1990

Fault tolerant, radiation hard, high performance digital signal processor

An architecture has been developed for a high-performance VLSI digital signal processor that is highly reliable, fault-tolerant, and radiation-hard. The signal processor, part of a spacecraft receiver designed to support uplink radio science experiments at the outer planets, organizes the connections between redundant arithmetic resources, register files, and memory through a shuffle exchange communication network. The configuration of the network and the state of the processor resources are all under microprogram control, which both maps the resources according to algorithmic needs and reconfigures the processing should a failure occur. In addition, the microprogram is reloadable through the uplink to accommodate changes in the science objectives throughout the course of the mission. The processor will be implemented with silicon compiler tools, and its design will be verified through silicon compilation simulation at all levels from the resources to full functionality. By blending reconfiguration with redundancy the processor implementation is fault-tolerant and reliable, and possesses the long expected lifetime needed for a spacecraft mission to the outer planets.

Holmann, Edgar↗
NASA NTRS1990

GaAs VLSI for aerospace electronics

Advanced aerospace electronics systems require high-speed, low-power, radiation-hard, digital components for signal processing, control, and communication applications. GaAs VLSI devices provide a number of advantages over silicon devices including higher carrier velocities, ability to integrate with high performance optical devices, and high-resistivity substrates that provide very short gate delays, good isolation, and tolerance to many forms of radiation. However, III-V technologies also have disadvantages, such as lower yield compared to silicon MOS technology. Achieving very large scale integration (VLSI) is particularly important for fast complex systems. At very short gate delays (less than 100 ps), chip-to-chip interconnects severely degrade circuit clock rates. Complex systems, therefore, benefit greatly when as many gates as possible are placed on a single chip. To fully exploit the advantages of GaAs circuits, attention must be focused on achieving high integration levels by reducing power dissipation, reducing the number of devices per logic function, and providing circuit designs that are more tolerant to process and environmental variations. In addition, adequate noise margin must be maintained to ensure a practical yield.

Larue, G.↗
NASA NTRS1993

Mongoose ASIC microcontroller programming guide

The 'Mongoose' ASIC microcontroller is a radiation-hard implementation of the R3000 microprocessor. This document describes the internals of the microcontroller in a level of detail necessary for someone implementing a software design.

Smith, Brian S.↗
NASA NTRS1995

Diffusion lengths in irradiated N/P InP-on-Si solar cells

Indium phosphide (InP) solar cells are being made on silicon (Si) wafers (InP/Si) to take advantage of both the radiation-hardness properties of the InP solar cell and the light weight and low cost of Si wafers compared to InP or germanium (Ge) wafers. The InP/Si cell application is for long duration and/or high radiation orbit space missions. InP/Si cells have higher absolute efficiency after a high radiation dose than gallium arsenide (GaAs) or silicon (Si) solar cells. In this work, base electron diffusion lengths in the N/P cell are extracted from measured AM0 short-circuit photocurrent at various irradiation levels out to an equivalent 1 MeV fluence of 1017 1 MeV electrons/sq cm for a 1 sq cm 12% BOL InP/Si cell. These values are then checked for consistency by comparing measured Voc data with a theoretical Voc model that includes a dark current term that depends on the extracted diffusion lengths.

Wojtczuk, Steven↗
NASA NTRS1995

Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen-passivated HE InP cell results will also be presented.

Chatterjee, B.↗
NASA NTRS1996

The role of radiation hard solar cells in minimizing the costs of global satellite communication systems

An analysis embodied in a PC computer program is presented, which quantitatively demonstrates how the availability of radiation hard solar cells can help minimize the cost of a global satellite communications system. An important distinction between the currently proposed systems, such as Iridium, Odyssey and Ellipsat, is the number of satellites employed and their operating altitudes. Analysis of the major costs associated with implementing these systems shows that operation at orbital altitudes within the earth's radiation belts (10(exp 3) to 10(exp 4)km) can reduce the total cost of a system by several hundred percent, so long as radiation hard components including solar cells can be used. A detailed evaluation of the predicted performance of photovoltaic arrays using several different planar solar cell technologies is given, including commercially available Si and GaAs/Ge, and InP/Si which is currently under development. Several examples of applying the program are given, which show that the end of life (EOL) power density of different technologies can vary by a factor of ten for certain missions. Therefore, although a relatively radiation-soft technology can usually provide the required EOL power by simply increasing the size of the array, the impact upon the total system budget could be unacceptable, due to increased launch and hardware costs. In aggregate, these factors can account for more than a 10% increase in the total system cost. Since the estimated total costs of proposed global-coverage systems range from $1B to $9B, the availability of radiation-hard solar cells could make a decisive difference in the selection of a particular constellation architecture.

Summers, Geoffrey P.↗
NASA NTRS1996

Diffusion lengths in irradiated N/P InP-on-Si solar cells

Indium phosphide (InP) solar cells were made on silicon (Si) wafers (InP/Si) by to take advantage of both the radiation-hardness properties of the InP solar cell and the light weight and low cost of Si wafers. The InP/Si cell application is for long duration and/or high radiation orbit space missions. Spire has made N/P InP/Si cells of sizes up to 2 cm by 4 cm with beginning-of-life (BOL) AM0 efficiencies over 13% (one-sun, 28C). These InP/Si cells have higher absolute efficiency and power density after a high radiation dose than gallium arsenide (GaAs) or silicon (Si) solar cells after a fluence of about 2e15 1 MeV electrons/sq. cm. In this work, we investigate the minority carrier (electron) base diffusion lengths in the N/P InP/Si cells. A quantum efficiency model was constructed for a 12% BOL AM0 N/P InP/Si cell which agreed well with the absolutely measured quantum efficiency and the sun-simulator measured AM0 photocurrent (30.1 mA/sq. cm). This model was then used to generate a table of AM0 photocurrents for a range of base diffusion lengths. AM0 photocurrents were then measured for irradiations up to 7.7e16 1 MeV electrons/sq. cm (the 12% BOL cell was 8% after the final irradiation). By comparing the measured photocurrents with the predicted photocurrents, base diffusion lengths were assigned at each fluence level. A damage coefficient K of 4e-8 and a starting (unirradiated) base electron diffusion length of 0.8 microns fits the data well. The quantum efficiency was measured again at the end of the experiment to verify that the photocurrent predicted by the model (25.5 mA/sq. cm) agreed with the simulator-measured photocurrent after irradiation (25.7 mA/sq. cm).

Wojtczuk, Steven↗
NASA NTRS2000

Recent Developments and Applications of Quantum Well Infrared Photodetector Focal Plane Arrays

There are many applications that require long wavelength, large, uniform, reproducible, low cost, stable, and radiation-hard infrared (IR) focal plane arrays (FPAs). For example, the absorption lines of many gas molecules, such as ozone, water, carbon monoxide, carbon dioxide, and nitrous oxide occur in the wavelength region from 3 to 18 micron. Thus, IR imaging systems that operate in the long wavelength IR (LWIR) region (6 - 18 micron) are required in many space borne applications such as monitoring the global atmospheric temperature profiles, relative humidity profiles, cloud characteristics, and the distribution of minor constituents in the atmosphere which are being planned for future NASA Earth and planetary remote sensing systems. Due to higher radiation hardness, lower 1/f noise, and larger array size the GaAs based Quantum Well Infrared Photodetector (QWIP) FPAs are very attractive for such space borne applications compared to intrinsic narrow band gap detector arrays. In this presentation we will discuss the optimization of the detector design, material growth and processing that has culminated in realization of large format long-wavelength QWIP FPAs, portable and miniature LWIR cameras, holding forth great promise for myriad applications in 6-18 micron wavelength range in science, medicine, defense and industry. In addition, we will present some system demonstrations using broadband, two-color, and high quantum efficiency long-wavelength QWIP FPAs.

Gunapala, S. D.↗
NASA NTRS2000

Acousto-Optic Imaging Spectrometers for Mars Surface Science

NASA's long term plan for Mars sample collection and return requires a highly streamlined approach for spectrally characterizing a landing site, documenting the mineralogical make-up of the site and guiding the collections of samples which represent the diversity of the site. Ideally, image data should be acquired at hundreds of VIS and IR wavelengths, in order to separately distinguish numerous anticipated species, using principal component analysis and linear unmixing. Cameras with bore-sighted point spectrometers can acquire spectra of isolated scene elements, but it requires 10(exp 2) to 10(exp 2) successive motions and precise relative pointing knowledge in order to create a single data cube which qualifies as a spectral map. These and other competing science objectives have to be accomplished within very short lander/rover operational lifetime (a few sols). True, 2-D imaging spectroscopy greatly speeds up the data acquisition process, since the spectra of all pixels in the scene are collected at once. This task can be accomplished with cameras that use electronically tunable acousto-optic tunable filters (AOTFs) as the optical tuning element. AOTFs made from TeO2 are now a mature technology, and operate at wavelengths from near-UV to about 5 microns. Because of incremental improvements in the last few years, present generation devices are rugged, radiation-hard and operate at temperatures down to at least 150K so they can be safely integrated into the ambient temperature optics of in-situ instruments such as planetary or small-body landers. They have been used for ground-based astronomy, and were also baselined for the ST-4 Champollion IR comet lander experiment (CIRCLE), prior to cancellation of the ST-4 mission last year. AIMS (for Acousto-optic Imaging spectrometer), is a prototype lander instrument which is being built at GSFC with support by the NASA OSS Advanced Technologies and Mission Studies, Mars Instrument Definition and Development Program (MIDP). AIMS is capable of tunable spectroscopic imaging of surface mineralogy, ices and dust between 0.5 and 2.4 microns, at a resolving power (lambda/delta lambda) which is typically several hundred. The design spatial resolution, similar to IMP and SSI, will allow mapping at scales down to about 1 cm.

Glenar, D. A.↗
NASA NTRS2001

Low Temperature Testing of a Radiation Hardened CMOS 8-Bit Flash Analog-to-Digital (A/D) Converter

Power processing electronic systems, data acquiring probes, and signal conditioning circuits are required to operate reliably under harsh environments in many of NASA:s missions. The environment of the space mission as well as the operational requirements of some of the electronic systems, such as infrared-based satellite or telescopic observation stations where cryogenics are involved, dictate the utilization of electronics that can operate efficiently and reliably at low temperatures. In this work, radiation-hard CMOS 8-bit flash A/D converters were characterized in terms of voltage conversion and offset in the temperature range of +25 to -190 C. Static and dynamic supply currents, ladder resistance, and gain and offset errors were also obtained in the temperature range of +125 to -190 C. The effect of thermal cycling on these properties for a total of ten cycles between +80 and - 150 C was also determined. The experimental procedure along with the data obtained are reported and discussed in this paper.

Gerber, Scott S.↗
NASA NTRS2001

A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (< 4 V) and short duration (< 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

Liu, S. Q.↗
NASA NTRS2004

Design and Performance of a Miniature Radar L-Band Transceiver

Radar electronics developed for past JPL space missions historically had been custom designed and as such, given budgetary, time, and risk constraints, had not been optimized for maximum flexibility or miniaturization. To help reduce cost and risk of future radar missions, a generic radar module was conceived. The module includes a 1.25-GHz (L-band) transceiver and incorporates miniature high-density packaging of integrated circuits in die/chip form. The technology challenges include overcoming the effect of miniaturization and high packaging density to achieve the performance, reliability, and environmental ruggedness required for space missions. The module was chosen to have representative (generic) functionality most likely required from an L-band radar. For very large aperture phased-array spaceborne radar missions, the large dimensions of the array suggest the benefit of distributing the radar electronics into the antenna array. For such applications, this technology is essential in order to bring down the cost, mass, and power of the radar electronics module replicated in each panel of the array. For smaller sized arrays, a single module can be combined with the central radar controller and still provide the bene.ts of configuration .exibility, low power, and low mass. We present the design approach for the radar electronics module and the test results for its radio frequency (RF) portion: a miniature, low-power, radiation-hard L-band transceiver.

McWatters, D.↗
NASA NTRS2004

Scientific Data Collection/Analysis: 1994-2004

This custom bibliography from the NASA Scientific and Technical Information Program lists a sampling of records found in the NASA Aeronautics and Space Database. The scope of this topic includes technologies for lightweight, temperature-tolerant, radiation-hard sensors. This area of focus is one of the enabling technologies as defined by NASA s Report of the President s Commission on Implementation of United States Space Exploration Policy, published in June 2004.

Source record↗
NASA NTRS2006

Alpha-Voltaic Sources Using Diamond as Conversion Medium

A family of proposed miniature sources of power would exploit the direct conversion of the kinetic energy of a particles into electricity in diamond semiconductor diodes. These power sources would function over a wide range of temperatures encountered in terrestrial and outer-space environments. These sources are expected to have operational lifetimes of 10 to 20 years and energy conversion efficiencies >35 percent. A power source according to the proposal would include a pair of devices like that shown in the figure. Each device would contain Schottky and p/n diode devices made from high-band-gap, radiation-hard diamond substrates. The n and p layers in the diode portion would be doped sparsely (<1014 cm-3) in order to maximize the volume of the depletion region and thereby maximize efficiency. The diode layers would be supported by an undoped diamond substrate. The source of a particles would be a thin film of 244Cm (half-life 18 years) sandwiched between the two paired devices. The sandwich arrangement would force almost every a particle to go through the active volume of at least one of the devices. Typical a particle track lengths in the devices would range from 20 to 30 microns. The a particles would be made to stop only in the undoped substrates to prevent damage to the crystalline structures of the diode portions. The overall dimensions of a typical source are expected to be about 2 by 2 by 1 mm. Assuming an initial 244Cm mass of 20 mg, the estimated initial output of the source is 20 mW (a current of 20 mA at a potential of 1 V).

Patel, Jagadish U.↗
NASA NTRS2000

Quantitative analysis of charge injection and discharging of Si nanocrystals and arrays by electrostatic force microscopy

NASA requirements for computing and memory for microspacecraft emphasizes high density, low power, small size, and radiation hardness. The distributed nature of a storage elements in nanocrystal floating-gate memories leads to instrinsic fault tolerance and radiation-hardness. Nanocrystal-based memories also offer the possibility of a faster, lower power operation.

atomic↗