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Results for “recombination layers”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Limiting process in shallow junction solar cells

In extending the violet and nonreflective cell technology to lower resistivities, several processes limiting output power were encountered. The most important was the dark diffusion current due to recombination at the front grid contacts. After removal of this problem by reduction of the silicon metal contact area (to 0.14 percent of the total area), the electric field enhanced junction recombination current J sub r was the main limitation. Alteration of the diffusion profile to reduce the junction field is shown to be an effective means of influencing J sub r. The remaining problems are the bulk recombination in the n+ layer and the surface recombination at the oxide-silicon interface; both of these problems are aggravated by band-narrowing resulting from heavy doping in the diffused layer. Experimental evidence for the main limitations is shown, where increased diffusion temperature is seen to reduce both the influence of the front grid contacts and the junction electric field by increasing the junction depth. The potential for further significant improvement in efficiency appears to be high.

Meulenberg, A.↗
NASA NTRS1977

Performance limitations of silicon solar cells

This paper discusses the performance limitations of silicon solar cells which have been identified and investigated using a detailed numerical analysis of solar cell operation. Efficiency limitations are discussed as related to doping densities, minority carrier lifetimes, widths of solar cell regions, surface recombination, antireflecting layers, and ohmic contact stripes. Areas in which improvements can be expected in performance are identified and discussed.

Hauser, J. R.↗
NASA NTRS1984

Lifetimes in Si CVD-epitaxial and other layers determined by spectral LBIC

In an effort to evaluate the minority carrier lifetimes in CVD-epitaxially grown layers in their dependence on the CVD process variables, the absolute spectral LBIC method was found to be the only available method capable of yielding both lifetime and surface recombination velocity in layers, independent of the resistivity of this layer or that of the substrate, as long as they are separated by a pn-junction. With this method, it was not only possible to determine the minority carrier lifetimes in as-grown epi-layers, but to observe their changes through the device fabrication processes. In addition, it was possible for the first time to determine the lifetimes in the alloy-regrowth p(+) layers of base high/low junction structures.

Wolf, M.↗
NASA NTRS1989

A magnetohydrodynamical model of the inner coma of Comet Halley

The magnetometer onboard the Giotto spacecraft observed a diamagnetic cavity surrounding the nucleus of Comet Halley. The location of the boundary of this diamagnetic cavity is determined by a balance between an inward magnetic pressure gradient force and an outward ion-neutral drag force, associated with collisions between the outwardly flowing neutrals and the stagnated ions. A one-dimensional time-dependent MHD model has been developed for the inner coma of Comet Halley, and includes ion-neutral collisions, photochemical production and loss of plasma, and finite conductivity. This model is used to investigate the plasma dynamics in the vicinity of the diamagnetic cavity boundary surface. A narrow transition layer with enhanced plasma density is shown to exist just inside the boundary, although a full understanding of this layer will require a two- or three-dimensional MHD model. The flux of cometary ions into this shocklike layer is removed by electron-ion recombination. The thickness of this layer is determined by the Mach number of the incident flow.

Cravens, T. E.↗
NASA NTRS1977

Surface recombination velocity and diffusion length of minority carriers in heavily doped silicon layers

Quantitative analysis of the electron beam-induced current and the dependence of the effective diffusion length of the minority carriers on the penetration depth of the electron beam were employed for the analysis of the carrier recombination characteristics in heavily doped silicon layers. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two dimensional mapping of the surface recombination velocity of P-diffused Si layers will be presented together with a three dimensional mapping of minority carrier lifetime in ion implanted Si. Layers heavily doped with As exhibit improved recombination characteristics as compared to those of the layers doped with P.

Gatos, H. C.↗
NASA NTRS1972

6300 A quantum efficiency of the recombination mechanism in the night-time F layer.

Simultaneous airglow and electron content measurements made at Hawaii are used to infer the number of 6300 and 6364 A quanta produced per electron lost in the nighttime F layer of the ionosphere. The equation of continuity of electrons is then solved numerically to obtain the electron density profile, and the amount of quenching is estimated. This leads to the number of excitations of O(super-1 D) per O2(+) recombination (epsilon). We find, for an exospheric temperature of 1100 K, epsilon is equal to 1.1 plus or minus 0.6, in good agreement with Zipf's laboratory measurement at 300 K.

Brown, W. E.↗
NASA NTRS1976

Experimental investigation of the excess charge and time constant of minority carriers in the thin diffused layer of 0.1 ohm-cm silicon solar cells

An experimental method is presented that can be used to interpret the relative roles of bandgap narrowing and recombination processes in the diffused layer. This method involves measuring the device time constant by open-circuit voltage decay and the base region diffusion length by X-ray excitation. A unique illuminated diode method is used to obtain the diode saturation current. These data are interpreted using a simple model to determine individually the minority carrier lifetime and the excess charge. These parameters are then used to infer the relative importance of bandgap narrowing and recombination processes in the diffused layer.

Godlewski, M. P.↗
NASA NTRS1976

Determination of surface recombination velocity in heavily doped silicon

A method was developed and successfully tested for the determination of the effective surface recombination velocity of silicon layers doped by diffusion of phosphorus to a level of 10 to the 19th to 10 to the 21st per cu cm. The effective recombination velocity was obtained from the dependence of the electron-beam-induced current on the penetration of the electron beam of a scanning electron microscope. A special silicon diode was constructed which permitted the collection at the p-n junction of the carriers excited by the electron beam. This diode also permitted the study of the effects of surface preparation on the effective surface recombination velocity.

Watanabe, M.↗
NASA NTRS1979

Optimum bandgap of several III-V heterojunction solar cells

Results of computer analysis of AlAs/Ga(1-x)As n-on-p heterojunction solar cells are presented with particular consideration given to interface recombination effects. It is found that, for an AlAs window layer, GaAs appears to be the optimum semiconductor for the active layer. Furthermore, even if the interface recombination is neglected, GaAs comes so close to being the optimum III-V active layer material that the additional effort required to incorporate a few percent of InAs into the active layer appears to be much greater than any expected efficiency increase.

Sutherland, J. E.↗
NASA NTRS1981

Transport velocity transformation - A convenient method for performance analysis of multilayer solar cell structure

It is noted that in the case of low-level injection, space-charge quasi-neutrality, and spatially constant material parameters (including an electrostatic field), the individual layer can be treated analytically and the basic solar cell performance parameters can be evaluated from three equations. The first equation represents the transformation of the transport velocity across the layer from the other layer boundary. The second establishes the light-generated current output from the layer interface, under the influence of the transport velocities and minority-carrier density at both layer boundaries and of bulk recombination. The third equation describes the flow of these carriers across other layers. The power of the approach is considered to lie in its facility for analysis of the solar cell's performance layer by layer, giving a clear picture of the individual layer's influence on cell efficiency.

Wolf, M.↗
NASA NTRS1982

Viscous-shock-layer heating analysis for the shuttle windward-symmetry plane with surface finite catalytic recombination rates

The paper demonstrates the capability of a reacting, two-dimensional viscous-shock-layer solution using the equivalent axisymmetric body concept to predict heating rates on the shuttle windward centerline for a wide range of altitudes. Results indicate that the nonequilibrium effects persist through most of the STS-2 entry heating pulse down to an altitude of about 50 km. When results are compared to those of the inviscid flowfield plus boundary layer solution of Scott (1980), agreement is fair to poor for nonequilibrium calculations, although very good for equilibrium calculations. A parametric study to demonstrate the effect of uncertainties in oxygen surface recombination rate for RCG coated HRSI on heating, indicates favorable results when a wall recombination rate of 100 cm/sec is used in the temperature range 1400-900 K.

Shinn, J. L.↗
NASA NTRS1983

Orbiter windward surface entry Heating: Post-orbital flight test program update

Correlations of orbiter windward surface entry heating data from the first five flights are presented with emphasis on boundary layer transition and the effects of catalytic recombination. Results show that a single roughness boundary layer transition correlation developed for spherical element trips works well for the orbiter tile system. Also, an engineering approach for predicting heating in nonequilibrium flow conditions shows good agreement with the flight test data in the time period of significant heating. The results of these correlations, when used to predict orbiter heating for a high cross mission, indicate that the thermal protection system on the windward surface will perform successfully in such a mission.

Harthun, M. H.↗
NASA NTRS1982

Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

Ho, C.-T.↗