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At least 37 records · Page 2

The Effects of Absorber Thickness on Reverse-Bias Damage in Cu(In,Ga)Se2 Solar Cells

We studied a variety of absorber thicknesses in Cu(In,Ga)Se 2 devices to examine the ability of the cell to withstand reverse current flow without damage. Absorbers were varied from 2.5 um to 0.4 um, with the expectation that larger reverse current would be allowed to flow at lower voltages as absorbers were made thinner. Our initial experiments showed promise. However, as the efficiency of thin devices was improved, the reverse current allowed at a given voltage decreased. Here we present our negative results on the ability of thin devices to allow higher reverse currents at lower voltages. We also give details on our procedures for reverse-bias testing small-area solar cells. We hope this information will be useful for those who want to study reverse-bias at the cell level.

14 SOLAR ENERGY↗

Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.

Lebron-Velilla, Ramon C.↗

Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

Lebron-Velilla, Ramon C.↗

Large area vertical Ga 2 O 3 Schottky diodes for X-ray detection

In this work, the Schottky barrier diodes were fabricated from a bulk Sn-doped (001) n-type Ga 2 O 3 substrate with a Si-doped epitaxial layer grown by hydride vapor phase epitaxy (HVPE), which demonstrate a good response to X-rays. Circular metal contacts with diameters ranging from 50 to 1500 um and square metal contacts ranging from 100 X 100 to 1600 X 1600 um 2 were deposited on the wafer. The devices were characterized for their electrical performance including forward current–voltage (FIV), reverse current–voltage (RIV), and capacitance-voltage (CV) measurements. The best device showed a breakdown voltage of –804 V and the devices tested had an average ideality of 1.12. The devices exhibited a clear response to X-rays even at zero bias with an experimentally observed response time 1.03 s and a linear response of detector signal to the X-ray dose rate. The experimentally observed device response time improved to 0.25 s when bias voltage is applied. The device also survived a long-term stability test of over 2 h under a constant X-ray irradiation. The sensitivity and the lower limit of detection for X-ray by Ga2O3 epitaxial Schottky detectors were discussed and determined as 43.5 C/mGy cm –2 at –200 V and 8.31 nGy Air /s, respectively.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Probing Electrode Transformation under Dynamic Operation for Alkaline Water Electrolysis

Alkaline water electrolyzers (AWEs) play a pivotal role in the realm of large-scale hydrogen production. However, AWEs face significant challenges in electrode degradation particularly under dynamic operating conditions, induced by reverse current phenomenon during frequent startup/shutdown. Herein, this study aims to rationalize the degradation mechanisms of AWEs under these conditions. A three-electrode membrane electrode assembly (MEA) setup is first utilized to decouple polarization behaviors of anode and cathode in AWEs. Following a proposed accelerated stress testing protocol, the setup allows for tracking individual electrode performance transformations during frequent reverse current operation. Integrating operando cell studies with in situ and post-mortem characterizations, it is showed that continuous formation of highly active species, nickel (oxy)hydroxides, improves the anode performance for oxygen evolution reaction. On the contrary, irreversible oxidation of nickel to β-nickel hydroxide results in a severe degradation of cathode, leading to material dissolution, poor electrical conductivity and loss of catalytic activity for hydrogen evolution reaction. These results provide insights in nickel-based electrode transformation mechanisms for alkaline water electrolysis and indicate that cathode with higher redox reversibility can potentially improve durability of AWEs under dynamic conditions.

08 HYDROGEN↗

Design and Varactors: Operational Considerations. A Reliability Study for Robust Planar GaAs

Preliminary conclusions include: Limits for reverse currents cannot be set. Based on current data we want to avoid any reverse bias current. We know 1 micro-A is too high. Leakage current gets suppressed when operated at 120K. Migration and verification: a) Reverse Bias Voltage will be limited; b) Health check with I/V curve: 1) Minimal reverse voltage shall be x0.75 of the calculated voltage breakdown Vbr; 2) Degradation of the Reverse Bias voltage at given current will be used as indication of ESD incidents or other Damages (high RF power, heat); 3) Calculation of diodes parameter to verify initial health check result in forward direction. RF output power starts to degrade when diode I/V curve is very strongly degraded only. Experienced on 400GHz doubler and 200GHz doubler

THz frequencies↗

Current-Induced Reversal of Anomalous Hall Conductance in Twisted Bilayer Graphene

It is observed experimentally that the sign of the Hall resistance can be flipped by a dc electric current in the twisted bilayer graphene (TBG) at 3/4 filling of the fourfold degenerate conduction flat bands. The experiment implies a switching of the valley polarization (VP) and topology in TBG. In this work, we present a theory on the current-induced switching of VP and topology. The presence of current in the bulk causes the redistribution of electron occupation in bands near the Fermi energy, which then deforms and shifts the band dispersion due to the Coulomb interaction. Above a critical current, the original occupied and empty bands can be swapped, resulting in the switching of VP and topology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Development of an Accelerated Test Method for the Determination of Susceptibility to Atmospheric Corrosion

The theoretical rationale is presented for use of a repetitive cyclic current reversal voltammetric technique for characterization of localized corrosion processes, including atmospheric corrosion. Applicability of this proposed experimental protocol is applied to characterization of susceptibility to crevice and pitting corrosion, atmospheric corrosion and stress corrosion cracking. Criteria upon which relative susceptibility is based were determined and tested using two iron based alloys commonly in use at NASA-Kennedy; A36 (a low carbon steel) and 4130 (a low alloy steel). Practicality of the procedure was demonstrated by measuring changes in anodic polarization behavior during high frequency current reversal cycles of 25 cycles per second with 1 mA/sq cm current density amplitude in solutions containing Cl anions. The results demonstrated that, due to excessive polarization which affects conductivity of barrier corrosion product layers, A36 was less resistant to atmospheric corrosion than its 4130 counterpart; behavior which was also demonstrated during exposure tests.

Ambrose, John R.↗

New examples of ferroelectric nematic materials showing evidence for the antiferroelectric smectic-Z phase

Abstract We present a new ferroelectric nematic material, 4-((4′-((trans)-5-ethyloxan-2-yl)-2′,3,5,6′-tetrafluoro-[1,1′-biphenyl]-4-yl)difluoromethoxy)-2,6-difluorobenzonitrile (AUUQU-2-N) and its higher homologues, the molecular structures of which include fluorinated building blocks, an oxane ring, and a terminal cyano group, all contributing to a large molecular dipole moment of about 12.5 D. We observed that AUUQU-2-N has three distinct liquid crystal phases, two of which were found to be polar phases with a spontaneous electric polarization P s of up to 6 µC cm –2 . The highest temperature phase is a common enantiotropic nematic (N) exhibiting only field-induced polarization. The lowest-temperature, monotropic phase proved to be a new example of the ferroelectric nematic phase (N F ), evidenced by a single-peak polarization reversal current response, a giant imaginary dielectric permittivity on the order of 10 3 , and the absence of any smectic layer X-ray diffraction peaks. The ordinary nematic phase N and the ferroelectric nematic phase N F are separated by an antiferroelectric liquid crystal phase which has low permittivity and a polarization reversal current exhibiting a characteristic double-peak response. In the polarizing light microscope, this antiferroelectric phase shows characteristic zig-zag defects, evidence of a layered structure. These observations suggest that this is another example of the recently discovered smectic Z A (SmZ A ) phase, having smectic layers with the molecular director parallel to the layer planes. The diffraction peaks from the smectic layering have not been observed to date but detailed 2D X-ray studies indicate the presence of additional short-range structures including smectic C-type correlations in all three phases—N, SmZ A and N F —which may shed new light on the understanding of polar and antipolar order in these phases.

36 MATERIALS SCIENCE↗

Simulated Impact of Shortened Strings in Commercial and Utility-Scale Photovoltaic Arrays

The deliberate removal of photovoltaic modules from a string can occur for various reasons encompassing maintenance, measurements, theft, or failure, reducing that string length relative to others when replacement modules are not available and there are not any viable alternative makes and models that could be inserted. This phenomenon, delineated in our prior experimentally validated research, manifests two significant effects: (1) a shift in the ideal maximum power point and (2) the induction of potentially substantial reverse currents in the shortened strings at open-circuit voltage, VOC. However, the scalability and asymptotic limits of these observed behaviors concerning array size remained undetermined. In this study, we elucidate the operational dynamics of such arrays by manipulating two mismatch-contributing variables in simulated arrays of up to 900 strings: the number of removed modules per string (indicative of the level of mismatch, ranging up to 5) and the quantity of shortened strings (1 to 60). Simulation outcomes underscore that mismatch severity impacts array operation more than the proportion of shortened strings. This research delves into the practical ramifications of operating with shortened strings, including implications for low-irradiance operation and the manifestation of deleterious reverse currents (>35 A in specific cases), emphasizing the need for careful array configuration for optimal performance and safety in these implementations.

Energy & Fuels↗

Electrodynamic Tethers. 1: Power Generator in LEO. 2: Thrust for Propulsion and Power Storage

An electrodynamic tether consists of a long insulated wire in space whose orbital motion cuts across lines of magnetic flux to produce an induce voltage that in typical low orbits averages about 200 v/km. Such a system should be capable of generating substantial electrical power, at the expense of IXB drag acting on its orbital energy. If a reverse current is driven against the induced voltage, the system should act as a motor producing IXB thrust. A reference system was designed, capable of generating 20 KW of power into an electrical load located anywhere along the wire at the expense of 2.6N (20,000 J/sec) drag on the wire. In an ideal system, the conversion between mechanical and electrical energy would reach 100% efficiency. In the actual system part of the 20 KW is lost to internal resistance of the wire, plasma and ionosphere, while the drag force is increased by residual air drag. The 20 KW PMG system as designed is estimated to provide 18.7 KW net power to the load at total drag loss of 20.4 KJ/sec, or an overall efficiency of 92%. Similar systems using heavier wire appear capable of producing power levels in excess of 1 Megawatt at voltages of 2-4 KV, with conversion efficiency between mechanical and electrical power better than 95%. The hollow cathode based system should be readily reversible from generator to motor operation by driving a reverse current using onboard power.

Mccoy, J. E.↗

Effects of nuclear radiation on a high-reliability silicon power diode. 4: Analysis of reverse bias characteristics

The effects of nuclear radiation on the reverse bias electrical characteristics of one hundred silicon power diodes were investigated. On a percentage basis, the changes in reverse currents were large but, due to very low initial values, this electrical characteristic was not the limiting factor in use of these diodes. These changes were interpreted in terms of decreasing minority carrier lifetimes as related to generation-recombination currents. The magnitudes of reverse voltage breakdown were unaffected by irradiation.

Been, J. F.↗

High rate of reversal in Nicd cells

Pressure response to reverse current, pressure decay after reversal, and discharge performance of nickel cadmium cells are presented.

Killian, H.↗

Does the resistive tearing instability nonlinearly evolve to a fast reconnection mode

A fundamental problem in applying linear tearing instability theory to the rapid processes (particle acceleration, heating) in flares was the characteristically slow rate of reconnection. This problem can be at least partially overcome if the tearin mode nonlinearly evolves to a regime in which the reconnection rate is substantially enhanced, such as that for the Petschek configuration. This possibility was often suggested, and some numerical simulations appear to provide support for such a view. Numerical simulation are used to study the nonlinear evolution of the tearing stability and show that a fast Petschek-like regime may not be achieved. This conclusion follows when there are sufficient grid points within the diffusion region to completely resolve the nonlinear dynamic interactions in the diffusion layer. When the numerical resolution is not adequate, the solution does appear to approach a Petschek configuration. The resolved solution contains reverse flow vortices and current sheets, terminated with a current reversal, similar to those obtained by Syrovatsky (JEPT, 33, 933, 1971).

Steinolfson, R. S.↗

Methods and algorithms of cyclic coulometry

Systems, devices, and methods of diagnosing an electrochemical cell using cyclic coulometry are discussed. An exemplary battery diagnostic system comprises a current generator to generate symmetric charge current and discharge current to excite an electrochemical cell, and a cyclic coulometer to evaluate performance of the electrochemical cell. The cyclic coulometer can adjust at least one of a charge time for applying the charge current, or a discharge time for applying the discharge current, to keep a monitored cell voltage toward a specific setpoint. The adjustment of charge or discharge time can be achieved by changing a current switch timing for reversing current from a first to a second current direction. The cyclic coulometer measures one or more electrical parameters during the charge or discharge cycle, and generates a performance metric using the measured electrical parameters.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗