Equatorial electrojet - Seasonal variation of the reversal times
Morning and evening current reversals in equatorial electrojet, discussing seasonal variation data for refining models
Balsley, B. B.↗
SEARCH · Search NASA
Results for “reverse current”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Development of an Accelerated Test Method for the Determination of Susceptibility to Atmospheric Corrosion
The theoretical rationale is presented for use of a repetitive cyclic current reversal voltammetric technique for characterization of localized corrosion processes, including atmospheric corrosion. Applicability of this proposed experimental protocol is applied to characterization of susceptibility to crevice and pitting corrosion, atmospheric corrosion and stress corrosion cracking. Criteria upon which relative susceptibility is based were determined and tested using two iron based alloys commonly in use at NASA-Kennedy; A36 (a low carbon steel) and 4130 (a low alloy steel). Practicality of the procedure was demonstrated by measuring changes in anodic polarization behavior during high frequency current reversal cycles of 25 cycles per second with 1 mA/sq cm current density amplitude in solutions containing Cl anions. The results demonstrated that, due to excessive polarization which affects conductivity of barrier corrosion product layers, A36 was less resistant to atmospheric corrosion than its 4130 counterpart; behavior which was also demonstrated during exposure tests.
Ambrose, John R.↗
Electrodynamic Tethers. 1: Power Generator in LEO. 2: Thrust for Propulsion and Power Storage
An electrodynamic tether consists of a long insulated wire in space whose orbital motion cuts across lines of magnetic flux to produce an induce voltage that in typical low orbits averages about 200 v/km. Such a system should be capable of generating substantial electrical power, at the expense of IXB drag acting on its orbital energy. If a reverse current is driven against the induced voltage, the system should act as a motor producing IXB thrust. A reference system was designed, capable of generating 20 KW of power into an electrical load located anywhere along the wire at the expense of 2.6N (20,000 J/sec) drag on the wire. In an ideal system, the conversion between mechanical and electrical energy would reach 100% efficiency. In the actual system part of the 20 KW is lost to internal resistance of the wire, plasma and ionosphere, while the drag force is increased by residual air drag. The 20 KW PMG system as designed is estimated to provide 18.7 KW net power to the load at total drag loss of 20.4 KJ/sec, or an overall efficiency of 92%. Similar systems using heavier wire appear capable of producing power levels in excess of 1 Megawatt at voltages of 2-4 KV, with conversion efficiency between mechanical and electrical power better than 95%. The hollow cathode based system should be readily reversible from generator to motor operation by driving a reverse current using onboard power.
Mccoy, J. E.↗
Effects of nuclear radiation on a high-reliability silicon power diode. 4: Analysis of reverse bias characteristics
The effects of nuclear radiation on the reverse bias electrical characteristics of one hundred silicon power diodes were investigated. On a percentage basis, the changes in reverse currents were large but, due to very low initial values, this electrical characteristic was not the limiting factor in use of these diodes. These changes were interpreted in terms of decreasing minority carrier lifetimes as related to generation-recombination currents. The magnitudes of reverse voltage breakdown were unaffected by irradiation.
Been, J. F.↗
High rate of reversal in Nicd cells
Pressure response to reverse current, pressure decay after reversal, and discharge performance of nickel cadmium cells are presented.
Killian, H.↗
Does the resistive tearing instability nonlinearly evolve to a fast reconnection mode
A fundamental problem in applying linear tearing instability theory to the rapid processes (particle acceleration, heating) in flares was the characteristically slow rate of reconnection. This problem can be at least partially overcome if the tearin mode nonlinearly evolves to a regime in which the reconnection rate is substantially enhanced, such as that for the Petschek configuration. This possibility was often suggested, and some numerical simulations appear to provide support for such a view. Numerical simulation are used to study the nonlinear evolution of the tearing stability and show that a fast Petschek-like regime may not be achieved. This conclusion follows when there are sufficient grid points within the diffusion region to completely resolve the nonlinear dynamic interactions in the diffusion layer. When the numerical resolution is not adequate, the solution does appear to approach a Petschek configuration. The resolved solution contains reverse flow vortices and current sheets, terminated with a current reversal, similar to those obtained by Syrovatsky (JEPT, 33, 933, 1971).
Steinolfson, R. S.↗
Magnetic-field dependence of direct interband tunneling in germanium.
Magnetic field effect on direct band-to-band tunnel current in doped germanium, noting decreases in reverse current and current-voltage characteristics
GERMANIUM↗
Surface and implantation effects on p-n junctions
The contribution of the graded region of implanted p-n junctions is analyzed using an exponential profile. Though previously neglected, it was recently shown that this contribution to the saturation current of HgCdTe diodes is significant. Assuming a dominant Auger recombination, an analytical solution to the continuity equation is obtained. An expression for the current generation by the graded region is presented for both ohmic and reflecting boundary conditions. A revised condition for a wide region is derived. When the region is narrow, the current differs drastically from that of the zero-gradient case. The effects of the junction depth and the substrate and surface concentrations on the current are investigated. It is shown that the reverse current does not saturate.
Schacham, Samuel E.↗
Silicon controlled rectifier polyphase bridge inverter commutated with gate-turn-off thyristor
A polyphase SCR inverter (10) having N switching poles, each comprised of two SCR switches (1A, 1B; 2A, 2B . . . NA, NB) and two diodes (D1B; D1B; D2A, D2B . . . DNA, DNB) in series opposition with saturable reactors (L1A, L1B; L2A, L2B . . . LNA, LNB) connecting the junctions between the SCR switches and diodes to an output terminal (1, 2 . . . 3) is commutated with only one GTO thyristor (16) connected between the common negative terminal of a dc source and a tap of a series inductor (14) connected to the positive terminal of the dc source. A clamp winding (22) and diode (24) are provided, as is a snubber (18) which may have its capacitance (c) sized for maximum load current divided into a plurality of capacitors (C.sub.1, C.sub.2 . . . C.sub.N), each in series with an SCR switch S.sub.1, S.sub.2 . . . S.sub.N). The total capacitance may be selected by activating selected switches as a function of load current. A resistor 28 and SCR switch 26 shunt reverse current when the load acts as a generator, such as a motor while braking.
Edwards, Dean B.↗
5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits
Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of μs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high‐power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre‐ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn‐off Thyristors (GTOs) and Silicon‐Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast‐switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn‐off), and lower‐magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).
Toftul, Alexandra↗
The Giacobini-Zinner magnetotail - Tail configuration and current sheet
The configuration and properties of the draped Giacobini-Zinner magnetotail and its field-reversing current sheet are studied using the combined magnetic field and plasma electron data sets obtained from the International Cometary Explorer spacecraft when it traversed (in October 1985) the comet 7800 km downstream of the nucleus. The MHD equations are used to derive pressure balance and plasma acceleration conditions. The implications of the various properties derived are examined, particularly with regard to the upstream near-nucleus region where the tail formation process occurs.
Mccomas, D. J.↗
Return currents in solar flares - Collisionless effects
If the primary, precipitating electrons in a solar flare are unstable to beam plasma interactions, it is shown that strong Langmuir turbulence can seriously modify the way in which a return current is carried by the background plasma. In particular, the return (or reverse) current will not be carried by the bulk of the electrons, but by a small number of high velocity electrons. For beam/plasma densities greater than 0.01, this can reduce the effects of collisions on the return current. For higher density beams where the return current could be unstable to current driven instabilities, the effects of strong turbulence anomalous resistivity is shown to prevent the appearance of such instabilities. Again in this regime, how the return current is carried is determined by the beam generated strong turbulence.
Rowland, H. L.↗
Oscillatory behavior of the tunneling current in germanium in a longitudinal magnetic field.
Longitudinal magnetic fields effects at low temperature on Sb doped Ge tunnel diodes reverse current, noting tunneling current oscillations
Bernard, W.↗
Reaction products on current or potential reversal in Li/SOCl2 cells
The products formed during abnormal operation due to current or potential reversal in Li/SOCl2 cells have been identified by several complementary analytical techniques. In addition to the expected corrosion of cell components, the following compounds were found: Cl2, SO2, SO2Cl2, S2Cl2 and SCl2. The presence of Cl2O and ClO2 reported by Salmon el al. (1982) has not been confirmed.
Carter, B. J.↗
2017 NEPP Tasks Update for Ceramic and Tantalum Capacitors
This presentation gives an overview of current NEPP tasks on ceramic and tantalum capacitors and plans for the future. It includes tasks on leakage currents, gas generation and case deformation in wet tantalum capacitors; ESR degradation and acceleration factors in MnO2 and polymer cathode capacitors. Preliminary results on the effect of moisture on degradation of reverse currents in MnO2 tantalum capacitors are discussed. Latest results on mechanical characteristics of MLCCs and modeling of degradation of leakage currents in BME capacitors with defects are also presented.
ceramic capacitors↗
Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications
It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vectors greater than or equal to 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. While not nearly as detrimental to SiC device performance as micropipes, it has recently been demonstrated that elementary screw dislocations somewhat degrade the reverse leakage and breakdown properties of 4H-SiC p(+)n diodes. Diodes containing elementary screw dislocations exhibited a 5% to 35% reduction in breakdown voltage, higher pre-breakdown reverse leakage current, softer reverse breakdown I-V knee, and microplasmic breakdown current filaments that were non-catastrophic as measured under high series resistance biasing. This paper details continuing experimental and theoretical investigations into the electrical properties of 4H-SiC elementary screw dislocations. The nonuniform breakdown behavior of 4H-SiC p'n junctions containing elementary screw dislocations exhibits interesting physical parallels with nonuniform breakdown phenomena previously observed in other semiconductor materials. Based upon experimentally observed dislocation-assisted breakdown, a re-assessment of well-known physical models relating power device reliability to junction breakdown has been undertaken for 4H-SiC. The potential impact of these elementary screw dislocation defects on the performance and reliability of various 4H-SiC device technologies being developed for high-power applications will be discussed.
Neudeck, Philip G.↗
Single-Event Latchup Testing of the Micrel MIC4424 Dual Power MOSFET Driver
We conducted 47 exposures of four different MIC4424 devices and did not observe any SEL or high-current events. This included worst-case conditions with a LET of 81 MeV-sq cm/mg, applied voltage of 18.5 V, a case temperature greater than 120 C, and a final fluence of 1x10(exp 7)/sq cm. We also monitored both the outputs for the presence of SETs. While the period of the 1 MHz square wave was slightly altered in some cases, no pulses were added or deleted. 1. Purpose: The purpose of this testing is to characterize the BiCMOS/DMOS Micrel MIC4424 dual, non-inverting MOSFET driver for single-event latchup (SEL) susceptibility. These data will be used for flight lot evaluation purposes. 2. Devices Tested: The MIC4423/4424/4425 family are highly reliable BiCMOS/DMOS buffer/driver MOSFET drivers. They are higher output current versions of the MIC4426/4427/4428. They can survive up to 5V of noise spiking, of either polarity, on the ground pin. They can accept, without either damage or logic upset, up to half an amp of reverse current (either polarity) forced back into their outputs. Primarily intended for driving power MOSFETs, the MIC4423/4424/4425 drivers are suitable for driving other loads (capacitive, resistive, or inductive) which require low-impedance, high peak currents, and fast switching times. Heavily loaded clock lines, coaxial cables, or piezoelectric transducers are some examples. The only known limitation on loading is that total power dissipated in the driver must be kept within the maximum power dissipation limits of the package. Five (5) parts were provided for SEL testing. We prepared four parts for irradiation and reserved one piece as an un-irradiated control. More information about the devices can be found in Table 1. The parts were prepared for testing by removing the lid from the CDIP package to expose the target die. The parts were then soldered to small copper circuit adapter boards for easy handling. These parts are fabricated in a bulk BiCMOS/DMOS technology. Since we do not know the number of overlayers used in the fabrication processes, linear energy transfer calculations are determined based on the top-surface incident ion species and kinetic energy.
Power MOSFET↗
The near-earth cross-tail current sheet - Detailed ISEE 1 and 2 case studies
Three near geomagnetic tail current sheet crossings of the ISEE 1 and 2 satellites, on April 5, 1979, are examined in detail. All are assoicated with the passage of an interplanetary shock and the region of variable solar wind pressure behind it. The general geometry of field reversing current sheets is discussed, and this geometry is examined for the cases studied, by using the ISEE 1 and 2 coorbiting satellite data sets. A new technique is employed which removes the effects of a variable sheet normal velocity for the first time. This allows us to calculate firm upper bounds on the current sheet thicknesses, and by utilizing certain physically motivated assumptions, determine the most probable actual sheet thicknesses, and inclinations of the field lines within these sheets. Current density profiles derived with this technique show the main cross-tail current sheet to be a structure that is many thermal ion-gyroradii thick and which is sometimes imbedded in a region that is three or more times thicker and contains much smaller current densities. These profiles also exhibit a considerable amount of fine structure in the sheet which appears as narrow peaks in the current density distributions. Possible explanations for these structures, and for the overall sheet structure itself, are examined.
Mccomas, D. J.↗