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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS2003

High-Temperature RF Probe Station For Device Characterization Through 500 deg C and 50 GHz

A high-temperature measurement system capable of performing on-wafer microwave testing of semiconductor devices has been developed. This high temperature probe station can characterize active and passive devices and circuits at temperatures ranging from room temperature to above 500 C. The heating system uses a ceramic heater mounted on an insulating block of NASA shuttle tile material. The temperature is adjusted by a graphical computer interface and is controlled by the software-based feedback loop. The system is used with a Hewlett-Packard 8510C Network Analyzer to measure scattering parameters over a frequency range of 1 to 50 GHz. The microwave probes, cables, and inspection microscope are all shielded to protect from heat damage. The high temperature probe station has been successfully used to characterize gold transmission lines on silicon carbide at temperatures up to 540 C.

Schwartz, Zachary D.↗
NASA NTRS2010

Fully Printed High-Frequency Phased-Array Antenna on Flexible Substrate

To address the issues of flexible electronics needed for surface-to-surface, surface-to-orbit, and back-to-Earth communications necessary for manned exploration of the Moon, Mars, and beyond, a room-temperature printing process has been developed to create active, phased-array antennas (PAAs) on a flexible Kapton substrate. Field effect transistors (FETs) based on carbon nanotubes (CNTs), with many unique physical properties, were successfully proven feasible for phased-array antenna systems. The carrier mobility of an individual CNT is estimated to be at least 100,000 sq cm/V(dot)s. The CNT network in solution has carrier mobility as high as 46,770 sq cm/V(dot)s, and has a large current-density carrying capacity of approx. 1,000 mA/sq cm , which corresponds to a high carrying power of over 2,000 mW/ sq cm. Such high carrier mobility, and large current carrying capacity, allows the achievement of high-speed (>100 GHz), high-power, flexible electronic circuits that can be monolithically integrated on NASA s active phasedarray antennas for various applications, such as pressurized rovers, pressurized habitats, and spacesuits, as well as for locating beacon towers for lunar surface navigation, which will likely be performed at S-band and attached to a mobile astronaut. A fully printed 2-bit 2-element phasedarray antenna (PAA) working at 5.6 GHz, incorporating the CNT FETs as phase shifters, is demonstrated. The PAA is printed out at room temperature on 100-mm thick Kapton substrate. Four CNT FETs are printed together with microstrip time delay lines to function as a 2-bit phase shifter. The FET switch exhibits a switching speed of 0.2 ns, and works well for a 5.6-GHz RF signal. The operating frequency is measured to be 5.6 GHz, versus the state-of-the-art flexible FET operating frequency of 52 MHz. The source-drain current density is measured to be over 1,000 mA/sq cm, while the conventional organic FETs, and single carbon nanotube-based FETs, are typically in the mA to mA/sq cm range. The switching voltage used is 1.8 V, while the state-of-the-art flexible FET has a gate voltage around 50 V. The gate voltage can effectively control the source-drain current with an ON-OFF ratio of over 1,000 obtained at a low Vds bias of 1.8 V. The azimuth steering angles of PAA are measured at 0deg, -14.5deg, -30deg, and 48.6deg. The measured far-field patterns agree well with simulation results. The efficiency of the 2-bit 2-element PAA is measured to be 39 percent, including the loss of transmission line, FET switch, and coupling loss of RF probes. With further optimization, the efficiency is expected to be around 50-60 percent.

Chen, Yihong↗
NASA NTRS1973

Inelastic Light Scattering Processes

Five different inelastic light scattering processes will be denoted by, ordinary Raman scattering (ORS), resonance Raman scattering (RRS), off-resonance fluorescence (ORF), resonance fluorescence (RF), and broad fluorescence (BF). A distinction between fluorescence (including ORF and RF) and Raman scattering (including ORS and RRS) will be made in terms of the number of intermediate molecular states which contribute significantly to the scattered amplitude, and not in terms of excited state lifetimes or virtual versus real processes. The theory of these processes will be reviewed, including the effects of pressure, laser wavelength, and laser spectral distribution on the scattered intensity. The application of these processes to the remote sensing of atmospheric pollutants will be discussed briefly. It will be pointed out that the poor sensitivity of the ORS technique cannot be increased by going toward resonance without also compromising the advantages it has over the RF technique. Experimental results on inelastic light scattering from I(sub 2) vapor will be presented. As a single longitudinal mode 5145 A argon-ion laser line was tuned away from an I(sub 2) absorption line, the scattering was observed to change from RF to ORF. The basis, of the distinction is the different pressure dependence of the scattered intensity. Nearly three orders of magnitude enhancement of the scattered intensity was measured in going from ORF to RF. Forty-seven overtones were observed and their relative intensities measured. The ORF cross section of I(sub 2) compared to the ORS cross section of N2 was found to be 3 x 10(exp 6), with I(sub 2) at its room temperature vapor pressure.

Fouche, Daniel G.↗
NASA NTRS1996

A Single-Block TRL Test Fixture for the Cryogenic Characterization of Planar Microwave Components

The High-Temperature-Superconductivity (HTS) group of the RF Technology Branch, Space Electronics Division, is actively involved in the fabrication and cryogenic characterization of planar microwave components for space applications. This process requires fast, reliable, and accurate measurement techniques not readily available. A new calibration standard/test fixture that enhances the integrity and reliability of the component characterization process has been developed. The fixture consists of 50 omega thru, reflect, delay, and device under test gold lines etched onto a 254 microns (0.010 in) thick alumina substrate. The Thru-Reflect-Line (TRL) fixture was tested at room temperature using a 30 omega, 7.62 mm (300 mil) long, gold line as a known standard. Good agreement between the experimental data and the data modelled using Sonnet's em(C) software was obtained for both the return (S(sub 11)) and insertion (S( 21)) losses. A gold two-pole bandpass filter with a 7.3 GHz center frequency was used as our Device Under Test (DUT), and the results compared with those obtained using a Short-Open-Load-Thru (SOLT) calibration technique.

Mejia, M.↗
NASA NTRS2011

Sub-Shot Noise Power Source for Microelectronics

Low-current, high-impedance microelectronic devices can be affected by electric current shot noise more than they are affected by Nyquist noise, even at room temperature. An approach to implementing a sub-shot noise current source for powering such devices is based on direct conversion of amplitude-squeezed light to photocurrent. The phenomenon of optical squeezing allows for the optical measurements below the fundamental shot noise limit, which would be impossible in the domain of classical optics. This becomes possible by affecting the statistical properties of photons in an optical mode, which can be considered as a case of information encoding. Once encoded, the information describing the photon (or any other elementary excitations) statistics can be also transmitted. In fact, it is such information transduction from optics to an electronics circuit, via photoelectric effect, that has allowed the observation of the optical squeezing. It is very difficult, if not technically impossible, to directly measure the statistical distribution of optical photons except at extremely low light level. The photoelectric current, on the other hand, can be easily analyzed using RF spectrum analyzers. Once it was observed that the photocurrent noise generated by a tested light source in question is below the shot noise limit (e.g. produced by a coherent light beam), it was concluded that the light source in question possess the property of amplitude squeezing. The main novelty of this technology is to turn this well-known information transduction approach around. Instead of studying the statistical property of an optical mode by measuring the photoelectron statistics, an amplitude-squeezed light source and a high-efficiency linear photodiode are used to generate photocurrent with sub-Poissonian electron statistics. By powering microelectronic devices with this current source, their performance can be improved, especially their noise parameters. Therefore, a room-temperature sub-shot noise current source can be built that will be beneficial for a very broad range of low-power, low-noise electronic instruments and applications, both cryogenic and room-temperature. Taking advantage of recent demonstrations of the squeezed light sources based on optical micro-disks, this sub-shot noise current source can be made compatible with the size/power requirements specific of the electronic devices it will support.

Strekalov, Dmitry V.↗
NASA NTRS2003

An Innovative Method for Manufacturing Gamma-TiAl Foil

The manufacture and entrance into service of thin gage gamma-TiAl product has been hampered by the inherent low room temperature ductility of the material. In the present study a new approach was explored for the efficient manufacture of gamma-TiAl foil with improved ductility. The objective was to produce a very clean material (low interstitial content) with a highly refined, homogeneous microstructure placed in a fully lamellar condition. The processing route involved the use of RF plasma spray deposition of pre-alloyed powders, followed by consolidation via vacuum hot pressing and heat treatment. The approach took advantage of a deposition process which included no electrodes, no binders and high cooling rates. Results and discussion of the work performed to date are presented.

Hales, Stephen J.↗
NASA NTRS1979

Absolute rate constants for the reaction of atomic hydrogen with ketene from 298 to 500 K

Rate constants for the reaction of atomic hydrogen with ketene have been measured at room temperature by two techniques, flash photolysis-resonance fluorescence and discharge flow-resonance fluorescence. The measured values are (6.19 + or - 1.68) x 10 to the -14th and (7.3 + or - 1.3) x 10 to the -14th cu cm/molecule/s, respectively. In addition, rate constants as a function of temperature have been measured over the range 298-500 K using the FP-RF technique. The results are best represented by the Arrhenius expression k = (1.88 + or - 1.12) x 10 to the -11th exp(-1725 + or - 190/T) cu cm/molecule/s, where the indicated errors are at the two standard deviation level.

Michael, J. V.↗
NASA NTRS1977

Effects of high temperature and e-beam irradiation on the stability of refractory thin films

Refractory thin films of Al2O3, ZrO2, MgO, ThO2, and BN have been investigated in situ in an UHV transmission electron microscope. The electron transparent refractory films were prepared by electron-beam evaporation, anodization, RF sputtering, and thinning of bulk crystal materials. The study concentrates on monitoring the thermal and mechanical stability of the films, phase and structural changes, and electron irradiation effects as a function of film-preparation conditions. With increasing temperatures, five different crystallographic phases were observed for both anodized and electron-beam-evaporated alumina films. Zirconia films exhibited two phase transitions upon heating to 1200 C and electron-irradiation-induced crystallization of ZrO2 even at room temperature. MgO, ThO2, and BN films did not undergo any noticeable phase transformation but ruptured due to sintering below 1200 C.

Lee, E. H.↗
NASA NTRS2004

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

Mueller, Carl↗
NASA NTRS2012

Amplifier Module for 260-GHz Band Using Quartz Waveguide Transitions

Packaging of MMIC LNA (monolithic microwave integrated circuit low-noise amplifier) chips at frequencies over 200 GHz has always been problematic due to the high loss in the transition between the MMIC chip and the waveguide medium in which the chip will typically be used. In addition, above 200 GHz, wire-bond inductance between the LNA and the waveguide can severely limit the RF matching and bandwidth of the final waveguide amplifier module. This work resulted in the development of a low-loss quartz waveguide transition that includes a capacitive transmission line between the MMIC and the waveguide probe element. This capacitive transmission line tunes out the wirebond inductance (where the wire-bond is required to bond between the MMIC and the probe element). This inductance can severely limit the RF matching and bandwidth of the final waveguide amplifier module. The amplifier module consists of a quartz E-plane waveguide probe transition, a short capacitive tuning element, a short wire-bond to the MMIC, and the MMIC LNA. The output structure is similar, with a short wire-bond at the output of the MMIC, a quartz E-plane waveguide probe transition, and the output waveguide. The quartz probe element is made of 3-mil quartz, which is the thinnest commercially available material. The waveguide band used is WR4, from 170 to 260 GHz. This new transition and block design is an improvement over prior art because it provides for better RF matching, and will likely yield lower loss and better noise figure. The development of high-performance, low-noise amplifiers in the 180-to- 700-GHz range has applications for future earth science and planetary instruments with low power and volume, and astrophysics array instruments for molecular spectroscopy. This frequency band, while suitable for homeland security and commercial applications (such as millimeter-wave imaging, hidden weapons detection, crowd scanning, airport security, and communications), also has applications to future NASA missions. The Global Atmospheric Composition Mission (GACM) in the NRC Decadel Survey will need low-noise amplifiers with extremely low noise temperatures, either at room temperature or for cryogenic applications, for atmospheric remote sensing.

Padmanabhan, Sharmila↗
NASA NTRS1994

Antenna sunshield membrane

An RF-transparent sunshield membrane covers an antenna reflector such as a parabolic dish. The blanket includes a single dielectric sheet of polyimide film 1/2-mil thick. The surface of the film facing away from the reflector is coated with a transparent electrically conductive coating such as vapor-deposited indium-tin oxide. The surface of the film facing the reflector is reinforced by an adhesively attached polyester or glass mesh, which in turn is coated with a white paint. In a particular embodiment of the invention, polyurethane paint is used. In another embodiment of the invention, a layer of paint primer is applied to the mesh under a silicone paint, and the silicone paint is cured after application for several days at room temperature to enhance adhesion to the primer.

Bogorad, Alexander↗
NASA NTRS2012

Development of Field-Controlled Smart Optic Materials (ScN, AlN) with Rare Earth Dopants

The purpose of this investigation is to develop the fundamental materials and fabrication technology for field-controlled spectrally active optics that are essential for industry, NASA, and DOD applications such as: membrane optics, filters for LIDARs, windows for sensors, telescopes, spectroscopes, cameras, flat-panel displays, etc. ScN and AlN thin films were fabricated on c-axis Sapphire (0001) or quartz substrate with the RF and DC magnetron sputtering. The crystal structure of AlN in fcc (rocksalt) and hcp (wurtzite) were controlled. Advanced electrical characterizations were performed, including I-V and Hall Effect Measurement. ScN film has a free carrier density of 5.8 x 10(exp 20)/per cubic centimeter and a conductivity of 1.1 x 10(exp 3) per centimeter. The background ntype conductivity of as-grown ScN has enough free electrons that can readily interact with the photons. The high density of free electrons and relatively low mobility indicate that these films contain a high level of shallow donors as well as deep levels. Also, the UV-Vis spectrum of ScN and AlN thin films with rare earth elements (Er or Ho) were measured at room temperature. Their optical band gaps were estimated to be about 2.33eV and 2.24eV, respectively, which are obviously smaller than that of undoped thin film ScN (2.4eV). The red-shifted absorption onset gives direct evidence for the decrease of band gap (Eg) and the energy broadening of valence band states are attributable to the doping. As the doped elements enter the ScN crystal lattices, the localized band edge states form at the doped sites with a reduction of Eg. Using a variable angle spectroscopic ellipsometer, the decrease in refractive index with applied field is observed with a smaller shift in absorption coefficient.

Kim, Hyun-Jung↗
NASA NTRS1993

Thin film processing of photorefractive BaTiO3

During the period covered by this report, October 11, 1991 through October 10, 1992, the research has progressed in a number of different areas. The sol-gel technique was initially studied and experimentally evaluated for depositing films of BaTiO3. The difficulties with the precursors and the poor quality of the films deposited lead to the investigation of pulsed laser deposition as an alternative approach. The development of the pulsed laser deposition technique has resulted in continuous improvements to the quality of deposited films of BaTiO3. The initial depositions of BaTiO3 resulted in amorphous films, however, as the pulsed laser deposition technique continued to evolve, films were deposited in the polycrystalline state, then the textured polycrystalline state, and most recently heteroepitaxial films have also been successfully deposited on cubic (100) oriented SrTiO3 substrates. A technique for poling samples at room temperature and in air is also undergoing development with some very preliminary but positive results. The analytical techniques, which include x-ray diffraction, ferroelectric analysis, UV-Vis spectrophotometry, scanning electron microscopy with x-ray compositional analysis, optical and polarized light microscopy, and surface profilometry have been enhanced to allow for more detailed evaluation of the samples. In the area of optical characterization, a pulsed Nd:YAG laser has been incorporated into the experimental configuration. Now data can also be acquired within various temporal domains resulting in more detailed information on the optical response of the samples and on their photorefractive sensitivity. The recent establishment of collaborative efforts with two departments at Johns Hopkins University and the Army Research Lab at Fort Belvoir has also produced preliminary results using the metallo-organic decomposition technique as an alternative method for thin film processing of BaTiO3. RF and DC sputtering is another film deposition approach that should be initiated in the near future. Other techniques for optical characterization, which may even allow for intragrannular (within single grains) investigations, are also being considered.

Schuster, Paul R.↗