Search NASA⌕ Search

SEARCH · Search NASA

Results for “sample thickness”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2

Sensing depths in frequency domain thermoreflectance

In this work, a method is developed to calculate the length into a sample to which a Frequency Domain Thermoreflectance (FDTR) measurement is sensitive. Sensing depth and sensing radius are defined as limiting cases for the spherically spreading FDTR measurement. A finite element model for FDTR measurements is developed in COMSOL multiphysics and used to calculate sensing depth and sensing radius for silicon and silicon dioxide samples for a variety of frequencies and laser spot sizes. The model is compared to experimental FDTR measurements. Design recommendations for sample thickness are made for experiments where semi-infinite sample depth is desirable. For measurements using a metal transducer layer, the recommended sample thickness is three thermal penetration depths, as calculated from the lowest measurement frequency.

36 MATERIALS SCIENCE↗

Temperature-dependent transmission and self-indication measurements upon depleted U in the unresolved region

Neutron transmission and self-indication ratio measurements have been carried out at the RPI LINAC on depleted U up to 100 KeV in order to investigate the temperature dependence of resonance self-shielding. These measurements were performed at three sample temperatures (77 deg k, 295 deg k, and 973 deg k) and with sample thicknesses ranging from 0.0076 to 0.0621 atom/barn. Both stochastic sampling and analytical methods have been used to interpret these data. Average resonance parameters have been obtained and temperature dependence as well as sample thickness dependence of the data have been extensively studied.

Byoun, T. Y.↗

The role of geological surfaces in determining visible-near infra red spectral signatures

The goal of the study described here is to determine new criteria for improved target discrimination in areas of hydrothermal mineralization. It is noted that the portion of materials, that is, geological surfaces detected by sensing devices, must be accurately determined before elemental and mineralogical characterization. The depth from which visible-near infrared radiation is reflected from target surfaces depends on composition and fabric. Reflectance spectra are obtained from binary mixtures of hematite, goethite, kaolinite and montmorillonite with a reflecting sphere spectrometer over a wavelength range of 400-2500 nm. The reflection (or absorption) intensity is plotted vs. the sample thickness (determined by scanning electron microscopy) to determine the sample thickness at which absorption saturates. The optical depth is seen to vary as a function of mineralogy and wavelength. In general, the maximum depth from which reflection features are discerned is from 12 to 47 microns measured in the visible-near infrared spectral region.

Sommer, S. E.↗

Crossover from Conventional to Unconventional Superconductivity in 2M-WS 2

Leveraging the reciprocal-space proximity effect between superconducting bulk and topological surface states (TSSs) offers a promising way to topological superconductivity. However, elucidating the mutual influence of bulk and TSSs on topological superconductivity remains a challenge. Here, we report pioneering transport evidence of a thickness-dependent transition from conventional to unconventional superconductivity in 2M-phase WS 2 (2M-WS 2 ). As the sample thickness reduces, we see clear changes in key superconducting metrics, including critical temperature, critical current, and carrier density. Notably, while thick 2M-WS 2 samples show conventional superconductivity, with an in-plane (IP) upper critical field constrained by the Pauli limit, samples under 20 nm exhibit a pronounced IP critical field enhancement, inversely correlated with 2D carrier density. This marks a distinct crossover to unconventional superconductivity with strong spin-orbit-parity coupling. Furthermore, our findings underscore the crucial role of sample thickness in accessing topological states in 2D topological superconductors, offering pivotal insights into future studies of topological superconductivity.

2D topological superconductor↗

Tensile testing and fracture mechanism analysis of polyvinyl alcohol nanofibrous webs

Abstract A tensile properties testing study was conducted to understand the influence of thickness, cross‐head speed (speed of testing), gauge length (GL; specimen test length), and sample shape on important tensile properties of polyvinyl alcohol (PVA) nanofiber webs. The effects of each testing parameter on load at break, extension at break, Young's modulus, and tensile stress–strain curve of PVA nanofiber webs are analyzed. The Welch two sample t ‐tests show the significant difference among tested data. Using interaction plots, two‐way analysis of variance, and margin mean plots, the interaction effects among testing parameters have been analyzed. Of all the factors, cross‐head speed, the interaction among GL, and sample thickness (GL: Thickness) and the interaction among GL, testing speed and sample thickness (GL: Speed: Thickness) have significant influence on the tensile properties of PVA nanofiber webs. Moreover, the hypothesized model of mechanism of tensile strain–stress curve of PVA nanofiber webs has been proposed. Based on the model, the tensile strain–stress curve can be split into three stages: linear elastic, partial break up, and complete breakage. This study will provide a better understanding of tensile testing parameters' effects and their interaction effects on the tensile properties of nanowebs.

Lou, Lihua↗

Optimize Electron Beam Energy toward In Situ Imaging of Thick Frozen Bio-Samples with Nanometer Resolution Using MeV-STEM

To optimize electron energy for in situ imaging of large biological samples up to 10 μm in thickness with nanoscale resolutions, we implemented an analytical model based on elastic and inelastic characteristic angles. This model has been benchmarked by Monte Carlo simulations and can be used to predict the transverse beam size broadening as a function of electron energy while the probe beam traverses through the sample. As a result, the optimal choice of the electron beam energy can be realized. In addition, the impact of the dose-limited resolution was analysed. While the sample thickness is less than 10 μm, there exists an optimal electron beam energy below 10 MeV regarding a specific sample thickness. However, for samples thicker than 10 μm, the optimal beam energy is 10 MeV or higher depending on the sample thickness, and the ultimate resolution could become worse with the increase in the sample thickness. Moreover, a MeV-STEM column based on a two-stage lens system can be applied to reduce the beam size from one micron at aperture to one nanometre at the sample with the energy tuning range from 3 to 10 MeV. In conjunction with the state-of-the-art ultralow emittance electron source that we recently implemented, the maximum size of an electron beam when it traverses through an up to 10 μm thick bio-sample can be kept less than 10 nm . This is a critical step toward the in situ imaging of large, thick biological samples with nanometer resolution.

36 MATERIALS SCIENCE↗

Investigation of Microstructures and Tensile Properties of 316L Stainless Steel Fabricated via Laser Powder Bed Fusion

In this study, a thorough investigation of the microstructures and tensile properties of 316L stainless steel fabricated via laser powder bed fusion (L-PBF) was done. 316L stainless steel specimens with two different thicknesses of 1.5 mm and 4.0 mm fabricated under similar conditions were utilized. Microstructural characterization was performed using optical microscopy (OM) and scanning electron microscopy (SEM) equipped with electron backscatter diffraction (EBSD). Melt pools and cellular structures were observed using OM, whereas EBSD was utilized to obtain the grain size, grain boundary characteristics, and crystallographic texture. The 1.5 mm thick sample demonstrated a yield strength (YS) of 538.42 MPa, ultimate tensile strength (UTS) of 606.47 MPa, and elongation to failure of 69.88%, whereas the 4.0 mm thick sample had a YS of 551.21 MPa, UTS of 619.58 MPa, and elongation to failure of 73.66%. These results demonstrated a slight decrease in mechanical properties with decreasing thickness, with a 2.4% reduction in YS, 2.1% reduction in UTS, and 5.8% reduction in elongation to failure. In addition to other microstructural features, the cellular structures were observed to be the major contributors to the high mechanical properties. Using the inverse pole figure (IPF) maps, both thicknesses depicted a crystallographic texture of {001} <101> in their as-built state. However, when subjected to tensile loads, texture transitions to {111} <001> and {111} <011> were observed for the 1.5 mm and 4.0 mm samples, respectively. Additionally, EBSD analysis revealed the pre-existence of high-density dislocation networks and a high fraction of low-angle grain boundaries. Interestingly, twinning was observed, suggesting that the plastic deformation occurred through dislocation gliding and deformation twinning.

316L stainless steel↗

Dielectric function of InGaAs in the visible

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X(0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

Alterovitz, S. A.↗

Dielectric function of InGaAs in the visible

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X (0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

Alterovitz, S. A.↗

Towards Construction of a Novel Nanometer-Resolution MeV-STEM for Imaging Thick Frozen Biological Samples

Driven by life-science applications, a mega-electron-volt Scanning Transmission Electron Microscope (MeV-STEM) has been proposed here to image thick frozen biological samples as a conventional Transmission Electron Microscope (TEM) may not be suitable to image samples thicker than 300–500 nm and various volume electron microscopy (EM) techniques either suffering from low resolution, or low speed. The high penetration of inelastic scattering signals of MeV electrons could make the MeV-STEM an appropriate microscope for biological samples as thick as 10 μm or more with a nanoscale resolution, considering the effect of electron energy, beam broadening, and low-dose limit on resolution. The best resolution is inversely related to the sample thickness and changes from 6 nm to 24 nm when the sample thickness increases from 1 μm to 10 μm. To achieve such a resolution in STEM, the imaging electrons must be focused on the specimen with a nm size and an mrad semi-convergence angle. This requires an electron beam emittance of a few picometers, which is ~1000 times smaller than the presently achieved nm emittance, in conjunction with less than 10 -4 energy spread and 1 nA current. We numerically simulated two different approaches that are potentially applicable to build a compact MeV-STEM instrument: (1) DC (Direct Current) gun, aperture, superconducting radio-frequency (SRF) cavities, and STEM column; (2) SRF gun, aperture, SRF cavities, and STEM column. Beam dynamic simulations show promising results, which meet the needs of an MeV-STEM, a few-picometer emittance, less than 10 -4 energy spread, and 0.1–1 nA current from both options. Also, we designed a compact STEM column based on permanent quadrupole quintuplet, not only to demagnify the beam size from 1 μm at the source point to 2 nm at the specimen but also to provide the freedom of changing the magnifications at the specimen and a scanning system to raster the electron beam across the sample with a step size of 2 nm and the repetition rate of 1 MHz. This makes it possible to build a compact MeV-STEM and use it to study thick, large-volume samples in cell biology.

36 MATERIALS SCIENCE↗

A machine-learning approach to measure 3D sample properties from 2D Transmission Electron Microscopy images

Transmission Electron Microscopy (TEM) is a powerful tool for the characterization of materials at the nanoscale; however, its inherent two-dimensional (2D) nature poses significant challenges to accurately measure three-dimensional (3D) properties. We introduce a supervised machine-learning model that predicts 3D structural information, such as sample thickness and curvature, from a series of conventional 2D TEM images. The model, a U-Net convolutional neural network, is trained on a large synthetic dataset generated from dynamical diffraction simulations that model TEM’s complex, nonlinear image formation, accounting for sample thickness and curvature. This physically realistic framework enables exploration of a broad parameter space impractical to sample experimentally. We demonstrate that the trained model has accurate predictions for experimental single-crystal silicon samples, achieving performance comparable to established measurement techniques. This work highlights the critical role of robust, simulation-based training in overcoming the limitations of real-world imaging artifacts and inconsistent sample geometries. By integrating machine learning with numerical simulations, we offer an efficient and scalable framework for quantitative TEM analysis, paving the way for more sophisticated 3D characterization of complex materials.

Dynamical diffraction↗

Infrared band extinctions and complex refractive indices of crystalline C2H2 and C4H2

Thermal IR absorption intensities are obtained for thin films of crystalline C2H2 and C4H2 at 70 K, and their n and k complex refractive indices are ascertained by separating true film absorption from interface reflection on the basis of an analysis of the transmission spectrum ratio for two sample thicknesses. This method significantly simplifies the n and k iteration process. The n and k values determined in the laboratory will in most cases reproduce a given sample thickness' observed transmission to within + or - 5 percent.

Khanna, R. K.↗

Atomic resolution convergent beam electron diffraction analysis using convolutional neural networks

Two types of convolutional neural network (CNN) models, a discrete classification network and a continuous regression network, were trained to determine local sample thickness from convergent beam diffraction (CBED) patterns of SrTiO 3 collected in a scanning transmission electron microscope (STEM) at atomic column resolution. Acquisition of atomic resolution CBED patterns for this purpose requires careful balancing of CBED feature size in pixels, acquisition speed, and detector dynamic range. The training datasets were derived from multislice simulations, which must be convolved with incoherent source broadening. Sample thicknesses were also determined using quantitative high-angle annular dark-field (HAADF) STEM images acquired simultaneously. The regression CNN performed well on sample thinner than 35 nm, with 70% of the CNN results within 1 nm of HAADF thickness, and 1.0 nm overall root mean square error between the two measurements. The classification CNN was trained for a thicknesses up to 100 nm and yielded 66% of CNN results within one classification increment of 2 nm of HAADF thickness. Our approach depends on methods from computer vision including transfer learning and image augmentation.

36 MATERIALS SCIENCE↗

Pyrolysis Rate and Yield Strength Reduction Incarbon Fiber and Glass Fiber Composites Underreentry Heating Conditions

The behavior of composite materials, specifically carbon fiber reinforced plastic (CFRP) and glass fiber reinforced plastic (GFRP), under reentry conditions poses a problem for space debris reentry risk modeling. Since these materials pyrolyze rather than melt and their different components demise at different rates, modeling their destruction to determine ground impact risk is complex. Modern spacecraft are using these materials in ever-greater quantities owing to their superior strength-to-weight characteristics, and this has required that the orbital debris community improve its understanding of how these materials demise on reentry. The NASA Orbital Debris Program Office undertook an extensive test campaign to better understand the rate at which several types of GFRP and CFRP materials pyrolyze under reentry heating conditions and how that pyrolysis affects the ultimate strength of the material. GFRP with a polyester resin (G10/FR-4) and CFRP with epoxy, cyanate ester, vinyl ester, and phenolic resins were tested. The test campaign was carried out at the Inductively Coupled Plasma (ICP) Torch Facility at the University of Texas at Austin. Because the ICP facility operates in a shirt-sleeve environment, test samples can be changed within seconds or minutes, allowing many samples to be tested in a short period. Two heat flux rates, 20 W/m2 and 30W/m2, and two oxygen concentration conditions, 0% and 2% of atmospheric, were applied to all five types of material. To measure both the char rate and the effect of pyrolysis on the ultimate material strength, two types of test were carried out for each material: a char rate test on a ~10 mm thick sample of material and an in-situ bending stress test of a ~2 mm thick sample of material. Measurements of the char rate showed very similar average pyrolysis front velocity in epoxy resin CFRP as in G10 at 3.6 mm/min and 3.4 mm/min, respectively. However, the total mass loss rate in theG10 was nearly double that of the CFRP at 3.8 g/min and 2.2 g/min, respectively. This result represented a slow ablation rate of carbon fibers in the CFRP at the temperatures encountered in low Earth orbit reentry and a comparatively rapid removal of the glass fibers in G10 due to melting and spallation. Pyrolysis front velocity was more significantly affected by the type of plastic than the type of fiber, with the cyanate ester CFRP samples displaying an average pyrolysis front velocity of only 1.9 mm/min. Similarly, the effect of thermal exposure on the ultimate strength of the material depended heavily on the type of plastic and very little on the type of fiber in the material. Epoxy, vinyl ester, and polyester resins all behaved very similarly, with complete structural failure at between 400 J/g and 600 J/g of specific absorbed heat. Phenolic and cyanate ester resins, on the other hand, displayed a change in structural properties that was only barely measurable with the current apparatus even after the maximum exposure time tested. These data are being incorporated into a numerical model of the ablation and demise of composite materials that will be used to more accurately calculate the ground casualty risk of future spacecraft.

Benton R. Greene↗

Precision Thickness Variation Mapping via One-Transducer Ultrasonic High Resolution Profilometry for Sample with Irregular or Rough Surface

An apparatus and method for determination of sample thickness and surface depression utilizing ultrasonic pulses. The sample is held in a predetermined position by a support member having a reference surface. Ultrasonic pulses travel through a medium of known velocity propagation and reflect off the reference surface and a sample surface. Time of flight data of surface echoes are converted to distances between sample surfaces to obtain computer-generated thickness profiles and surface mappings.

Roth, Don J.↗

Precision Thickness Variation Mapping Via One-Transducer Ultrasonic High Resolution Profilometry for Sample With Irregular or Rough Surface

An apparatus and method for determination of sample thickness and surface depression utilizing ultrasonic pulses is discussed. The sample is held in a predetermined position by a support member having a reference surface. Ultrasonic pulses travel through a medium of known velocity propagation and reflect off the reference surface and a sample surface. Time of flight data of surface echoes are converted to distances between sample surfaces to obtain computer-generated thickness profiles and surface mappings.

Roth, Don J.↗

Monte Carlo Simulation of Electron Interactions in an MeV-STEM for Thick Frozen Biological Sample Imaging

A variety of volume electron microscopy techniques have been developed to visualize thick biological samples. However, the resolution is limited by the sliced section thickness (>30–60 nm). To preserve biological samples in a hydrated state, cryo-focused ion beam scanning electron microscopy has been developed, providing nm resolutions. However, this method is time-consuming, requiring 15–20 h to image a 10 μm thick sample with an 8 nm slice thickness. There is a pressing need for a method that allows the rapid and efficient study of thick biological samples while maintaining nanoscale resolution. The remarkable ability of mega-electron-volt (MeV) electrons to penetrate thick biological samples, even exceeding 10 μm in thickness, while maintaining nanoscale resolution, positions MeV-STEM as a suitable microscopy tool for such applications. Our research delves into understanding the interactions between MeV electrons and frozen biological specimens through Monte Carlo simulations. Single elastic scattering, plural elastic scattering, single inelastic scattering, and plural inelastic scattering events have been simulated. The electron trajectories, the beam profile, and the intensity change of electrons in each category have been investigated. Additionally, the effects of the detector collection angle and the focal position of the electron beam were investigated. As electrons penetrated deeper into the specimen, single and plural elastic scattered electrons diminished, and plural inelastic scattered electrons became dominant, and the beam profile became wider. Even after 10 μm of the specimen, 42% of the MeV electrons were collected within 10 mrad. This confirms that MeV-STEM can be employed to study thick biological samples.

electron specimen interaction↗

A simple model of electron beam initiated dielectric breakdown

A steady state model that describes the internal charge distribution of a planar dielectric sample exposed to a uniform electron beam was developed. The model includes the effects of charge deposition and ionization of the beam, separate trap-modulated mobilities for electrons and holes, electron-hole recombination, and pair production by drifting thermal electrons. If the incident beam current is greater than a certain critical value (which depends on sample thickness as well as other sample properties), the steady state solution is non-physical.

Beers, B. L.↗