Search NASA⌕ Search

SEARCH · Search NASA

Results for “series resistance”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Generalized and Mechanistic PV Module Performance Prediction From Computer Vision and Machine Learning on Electroluminescence Images

Electroluminescence (EL) imaging of photovoltiac (PV) modules offers high-speed, high-resolution information about device performance, affording opportunities for greater insight and efficiency in module characterization across manufacturing, research and development, and power plant operations and management. Predicting module electrical properties from EL image features is a critical step toward these applications. In this article, we demonstrate quantification of both generalized and performance mechanism-specific EL image features, using pixel intensity-based and machine learning classification algorithms. From EL image features, we build predictive models for PV module power and series resistance, using time-series current-voltage (I-V) and EL data obtained stepwise on five brands of modules spanning three Si cell types through two accelerated exposures: damp heat (DH) (85°C/85% RH) and thermal cycling (TC) (IEC 61215). Overall, 195 pairs of EL images and I-V characteristics were analyzed, yielding 11700 individual PV cell images. A convolutional neural network was built to classify cells by the severity of busbar corrosion with high accuracy (95%). Generalized power predictive models estimated the maximum power of PV modules from EL images with high confidence and an adjusted-R 2 of 0.88, across all module brands and cell types in extended DH and TC exposures. Mechanistic degradation prediction was demonstrated by quantification of busbar corrosion in EL images of three module brands in DH, and subsequent modeling of series resistance using these mechanism-specific EL image features. For modules exhibiting busbar corrosion, we demonstrated series resistance predictive models with adjusted-R 2 of up to 0.73.

14 SOLAR ENERGY↗
DOE OSTI2021

Screening candidate supplementary cementitious materials under standard and accelerated curing through time-series surface resistivity measurements and change-point detection

Time-series surface resistivity (SR) measurements are evaluated as an indicator of pozzolanicity in concretes containing 13 materials of both known and unknown pozzolanicity, under standard and accelerated curing conditions, and the results were validated against portlandite consumption obtained through thermogravimetric analysis. Change-point detection (CPD) analysis is applied to the data to provide a rigorous indicator of hydration age of the onset and rate of the pozzolanic reaction, if occurring. The SR measurements were able to capture the onset of the pozzolanic reactions in concretes curing at elevated temperature regimes, which allows determination of pozzolanicity weeks earlier than at standard curing temperatures. Using CPD along with slope analysis allows a comprehensive analysis of a material's reactivity and determination of pozzolanicity in as quickly as two days. Time-series SR measurements at elevated curing conditions, along with limits on material composition, are recommended for determination of pozzolanic reactivity in novel or variable materials.

36 MATERIALS SCIENCE↗
NASA NTRS2008

SiC vs. Si for High Radiation Environments: NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Commercial silicon carbide and silicon Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. Changes in forward bias I-V characteristics are reported for fluences up to 4 x 10(exp 14) p/cm2. For devices of both material types, the series resistance is observed to increase as the fluence increases. The changes in series resistance result from changes in the free carrier concentration due to carrier removal by the defects produced. A simple model is presented that allows calculation of the series resistance of the device and then relates the carrier removal rate to the changes in series resistance. Using this model to calculate the carrier removal rate in both materials reveals that the carrier removal rate in silicon is less than that in silicon carbide, indicating that silicon is the more radiation tolerant material.

Schottky barrier power diodes↗
DOE OSTI2020

High-Energy Density Capacitors for Electric Vehicle Traction Inverters

DC bus capacitors take up substantial space in a traction inverter, limiting the traction drive power density. Thus, several commercial capacitor technologies, under consideration for use as DC bus capacitors for electric vehicle traction inverters, were reviewed for their ability to optimize the volume of traction inverters and are evaluated in this paper. Three promising capacitor technologies--film, ceramic, and PLZT have been selected for detailed experimental characterization. Experimental results for equivalent series resistance, equivalent series inductance, and effective capacitance with respect to DC bias voltage for various operating frequencies and temperatures are presented. The results reveal the superiority of the PLZT capacitor in terms of power density, current conduction capability, and redundancy.

Chowdhury, Shajjad↗
DOE OSTI2021

Local Resistance Measurement for Degradation of c-Si Heterojunction with Intrinsic Thin Layer (HIT) Solar Modules

Silicon heterojunction with intrinsic thin layer (or HIT) modules typically degrade at a rate of less than 1% annually in solar fields with dominant degradation in open-circuit voltage and some degradation in series resistance. However, detailed mechanisms can differ from module to module. Here, we study increases in local series resistance that occur over long-term field deployment, indicated by cell areas where the photoluminescence intensity does not degrade but the electroluminescence degrades significantly. To directly measure the local series resistance, we have cored out the local electroluminescence-degraded area, and we measured the sheet resistance by 4-point-probe and local nm-scale resistance using scanning spreading resistance microscopy (SSRM). The results by 4-point-probe show scattered sheet resistance that can be caused, for example, by nonuniform current paths through the transparent conductive oxide layer, the a-Si:H emitter, or the near-junction c-Si inversion layer. In contrast, the SSRM results indicate a relatively uniform and non-degraded resistivity on smaller nanometer spatial scales. SSRM is an atomic force microscopy-based two-terminal resistance mapping technique that measures the local resistance in nm-volume beneath the probe. The consistent resistances measured on the control and degraded samples can exclude the degradation of transparent conductive oxide resistance.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2022

Comment on “Introduction of a Novel Figure of Merit for the Assessment of Transparent Conductive Electrodes in Photovoltaics: Exact and Approximate Form”

Anand et al. introduce an implicit equation for transparent conductive electrode (TCE) merit in photovoltaics (PV) by lumping series resistance in with the diode. However, an explicit equation has been previously derived by lumping series resistance external to the diode. For TCEs of practical interest for PV, the choice of where to lump series resistance does not affect merit, so external lumping is preferred. On the other hand, monolith deadspace, metal grid shadowing, and grid resistance shift TCE merit away from the figure of merit behavior published by Anand et al.

14 SOLAR ENERGY↗
DOE OSTI2019

Reverse Heterojunction (Al)GaInP Solar Cells for Improved Efficiency at Concentration

Mitigating series resistance is crucial to the efficiency of concentrator solar cells at high current density. Conventional AlGaInP junction designs for the top junction of III-V multijunction cells present a challenging tradeoff between series resistance on the one hand and current collection and voltage on the other hand. In this article we discuss the physics of a reverse heterojunction solar cell that aims to improve on this tradeoff by combining a high bandgap Al 0.18 Ga 0.33 In 0.49 P base and a lower bandgap (Al)GaInP emitter. The high mobility of the emitter leads to a relatively low series resistance, compared with a high bandgap homojunction cell. Furthermore, the electroluminescence spectrum shows emission peaks from both the emitter and base, leading to an open-circuit voltage that is not strictly dominated by either layer. The reverse heterojunction design is increasingly beneficial as the one-sun voltage increases.

14 SOLAR ENERGY↗
DOE OSTI2023

Improvement of screen-printable metallization paste for low-cost silicon solar cells utilizing silver coated copper powders

This aims of this project were to develop low-cost screen-printable Ag|Cu metallization, as alternative to Ag paste, for contacting PERC solar cells with transparent emitter for high performance and reliability. The intended goal was to achieve 81% fill factor with a screen-printable Ag|Cu paste alternative. This was attempted through a three strand approach including Ag|Cu formulation by SVMT, production using cavitation technology by ACI and contact formation through the understanding of (i) the liquid phase sintering of the nano/macro particles of Ag|Cu to achieve bulk metal with very low series resistance, (ii) optimization of contact firing to avoid penetration of Cu into the silicon bulk, and finally (iii) proper analysis to quantify the contributions of each resistance component and keep the total series resistance at 0.2 Ω-cm2, which would result in high fill factor of 81% by UNC Charlotte. The objectives also involved i) the implementation of glass frit with Cu metal that will etch through the ARC for low contact resistance and adhesion, ii) development of Ag|Cu pastes with the optimized glass frit, iii) investigation of the impact of Cu particle size, morphology and loading on the gridline resistance, iv) narrow gridline screen designs along with narrow gridline prints, v) development of fast belt speeds of up to 375 inches per minute (ipm) sintering, and vi) stability study on Ag|Cu contact to high performance and reliability.

14 SOLAR ENERGY↗
NASA NTRS1986

The 60 GHz IMPATT diode development

The objective is to develop 60 GHz IMPATT diodes suitable for communications applications. The performance goals of the 60 GHz IMPATT is 1W CW output power with a conversion efficiency of 15 percent and 10-year lifetime. The final design of the 60 GHz IMPATT structure evolved from computer simulations performed at the University of Michigan. The initial doping profile, involving a hybrid double-drift (HDD) design, was derived from a drift-diffusion model that used the static velocity-field characteristics for GaAs. Unfortunately, the model did not consider the effects of velocity undershoot and delay of the avalanche process due to energy relaxation. Consequently, the initial devices were oscillating at a much lower frequency than anticipated. With a revised simulation program that included the two effects given above, a second HDD profile was generated and was used as a basis for fabrication efforts. In the area of device fabrication, significant progress was made in epitaxial growth and characterization, wafer processing, and die assembly. The organo-metallic chemical vapor deposition (OMCVD) was used. Starting with a baseline X-Band IMPATT technology, appropriate processing steps were modified to satisfy the device requirements at V-Band. In terms of efficiency and reliability, the device requirements dictate a reduction in its series resistance and thermal resistance values. Qualitatively, researchers were able to reduce the diodes' series resistance by reducing the thickness of the N+ GaAs substrate used in its fabrication.

Dat, Rovindra↗
NASA NTRS1985

Two years of on-orbit gallium arsenide performance from the LIPS solar cell panel experiment

The LIPS on-orbit performance of the gallium arsenide panel experiment was analyzed from flight operation telemetry data. Algorithms were developed to calculate the daily maximum power and associated solar array parameters by two independent methods. The first technique utilizes a least mean square polynomial fit to the power curve obtained with intensity and temperature corrected currents and voltages; whereas, the second incorporates an empirical expression for fill factor based on an open circuit voltage and the calculated series resistance. Maximum power, fill factor, open circuit voltage, short circuit current and series resistance of the solar cell array are examined as a function of flight time. Trends are analyzed with respect to possible mechanisms which may affect successive periods of output power during 2 years of flight operation. Degradation factors responsible for the on-orbit performance characteristics of gallium arsenide are discussed in relation to the calculated solar cell parameters. Performance trends and the potential degradation mechanisms are correlated with existing laboratory and flight data on both gallium arsenide and silicon solar cells for similar environments.

Francis, R. W.↗
DOE OSTI2024

Optical and photoelectric properties of surface barrier diodes based on n- Hg3In2Te6 crystals

The high radiation resistance of Hg3In2Te6 (MIT) single crystals to large doses of ionizing radiation makes devices quite attractive. Such a feature of the crystal structure has not only important advantages, but also causes serious technological difficulties in doping and controlling the specific resistance within the required limits and type of conductivity of single crystals. These technological difficulties create serious problems when creating structures with a potential barrier, especially with a p-n junction. At the moment, there are no publications on the creation of a p-n junction based on MIT. The only alternative is to create a potential barrier such as a Schottky diode or a metal-dielectric-semiconductor structure. This limits the use of MIT to produce, for example, rectifier diodes that can operate at relatively high reverse bias voltages. The typical resistivity of single crystals of MIT of n-type conductivity, which are used for the manufacture of diodes and photodiodes, is approximately equal to ρ≈103-104 Ω×cm. Such a specific resistance leads to a relatively large resistance of the neutral part of the single crystal, which in turn limits the direct currents of the rectifier diodes and significantly limits an important parameter of photodiodes - the dynamic range of the watt-ampere characteristic. This problem arises from the relatively high series resistance of the substrate. For rectifier diodes, this relatively large series resistance leads to a significant forward bias voltage drop, which reduces both the rectification factor and the amount of rectified current. We have already created diodes and photodiodes on Cr/MIT/Cr single crystals with a specific resistance of ρ≈103-104 Ω×cm. The diodes had relatively small dark currents but had the disadvantage of a relatively large specific resistance of the substrate, which we have already discussed above [1,2,3].

Sklyarchuk, V.↗
NASA NTRS1978

Growth, evaluation and modeling of silicon-on-ceramic solar cells

The silicon-on-ceramic (SOC) process uses inexpensive ceramic substrates to provide supported growth of silicon from the melt. The conditions for unidirectional solidification, the grain structure and other properties are quite similar to those of EFG silicon ribbon. Solar cells with interdigital electrodes have demonstrated AMl conversion efficiencies (active area) of 7.8% without AR coatings and 10.1% efficiencies with an AR coating of SiO. Mathematical modeling of the series resistance of cells shows the feasibility of making electrical contact to the base layer of the cell through slots in the substrate. However, series resistance in the base layer sets an upper limit on slot spacing for efficient cell performance.

Zook, J. D.↗
NASA NTRS1983

GaAs solar cells for concentrator systems in space

Cells for operation in space up to more than 100 suns were made, and an AMO efficiency of 21% at 100 suns with these cells was obtained. The increased efficiency resulted not only from the higher open circuit voltage associated with the higher light intensity (higher short circuit current); it also benefitted from the increase in fill factor caused by the lower relative contribution of the generation recombination current to the forward bias current when the cell's operating current density is increased. The experimental cells exhibited an AMO efficiency close to 16% at 200 C. The prospect of exploiting this capability for the continuous annealing of radiation damage or for high temperature missions (e.g., near Sun missions) remains therefore open. Space systems with concentration ratios on the order of 100 suns are presently under development. The tradeoff between increased concentration ratio and increased loss due to the cell's series resistance remains attractive even for space applications at a solar concentrator ratio of 100 suns. In the design of contact configuration with low enough series resistance for such solar concentration ratios, the shallow junction depth needed for good radiation hardness and the thin AlGaAs layer thickness needed to avoid excessive optical absorption losses have to be retained.

Loo, R. Y.↗
DOE OSTI2025

Empirical thermophotovoltaic performance predictions and limits

Significant progress has been made in the field of thermophotovoltaics, with efficiency recently rising to over 40% due to improvements in cell design and material quality, higher emitter temperatures, and better spectral management. However, inconsistencies in trends for efficiency with semiconductor bandgap energy across various temperatures pose challenges in predicting optimal bandgaps or expected performance for different applications. To address these issues, here we present realistic performance predictions for various types of single-junction cells over a broad range of emitter temperatures using an empirical model based on past cell measurements. Our model is validated using data from different authors with various bandgaps and emitter temperatures, and an excellent agreement is seen between the model and the experimental data. Using our model, we show that in addition to spectral losses, it is important to consider practical electrical losses associated with series resistance and cell quality to avoid overestimation of system efficiency. Here, we also show the effect of modifying various system parameters such as bandgap, above and below-bandgap reflectance, saturation current, and series resistance on the efficiency and power density of thermophotovoltaics at different temperatures. Finally, we predict the bandgap energies for best performance over a range of emitter temperatures for different cell material qualities.

14 SOLAR ENERGY↗
NASA NTRS1982

Determination of optimum sunlight concentration level in space for 3-5 cascade solar cells

The optimum range of concentration levels in space for III-V cascade cells was calculated using a realistic solar cell diode equation. Temperature was varied with concentration using several models and ranged from 55 C at 1 sun to between 80 and 200 C at 100 suns. A variety of series resistance and internal resistances were used. Coefficients of the diffusion and recombination terms are strongly temperature dependent. The study indicates that the maximum efficiency of 30 percent occurs in the 50 to 100 sun concentration range provided series resistance is below 0.015 ohm-sq cm and cell temperature is about 80 C at 100 suns.

Curtis, H. B.↗
NASA NTRS1982

Determination of optimum sunlight concentration level in space for 3-4 cascade solar cells

The optimum range of concentration in space for III-V cascade cells has been calculated using a realistic solar cell diode equation. Temperature was varied with concentration using several models and ranged from 55 deg at one sun to between 80 deg and 200 deg C at 100 suns. A variety of series resistance and internal resistances were used. Coefficients of the diffusion and recombination terms are strongly temperature dependent. The study indicates that the maximum efficiency of 30 percent occurs in the 50 to 100 X sun concentration range provided series resistance is below 0.015 ohm sq cm and cell temperature is about 80 C at 100 suns.

Curtis, H. B.↗
NASA NTRS1985

Thin film module electrical configuration versus electrical performance

The as made and degraded states of thin film silicon (TFS) based modules have been modelled in terms of series resistance losses. The origins of these losses lie in interface and bulk regions of the devices. When modules degrade under light exposure, increases occur in both the interface and bulk components of the loss based on series resistance. Actual module performance can thus be simulated by use of only one unknown parameter, shunt losses. Use of the simulation to optimize module design indicates that the current design of 25 cells per linear foot is near optimum. Degradation performance suggests a shift to approx. 35 cells to effect maximum output for applications not constrained to 12 volts. Earlier studies of energy based performance and tandem structures should be updated to include stability factors, not only the initial loss factor tested here, but also appropriate annealing factors.

Morel, D. L.↗