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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Self‐Strain Suppression of the Metal‐to‐Insulator Transition in Phase‐Change Oxide Devices

Strongly correlated materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond conventional semiconductor transistors. Devices that take advantage of structural phase transitions have inherent built‐in memory, reminiscent of synapses and neurons, and are thus natural candidates for neuromorphic computing. Of particular interest are phase‐change oxides, which allow for control over the metal‐to‐insulator transition. Here, X‐ray nano‐diffraction structural imaging of micro‐devices fabricated with the archetypal phase‐change material vanadium sesquioxide (V 2 O 3 ) is reported. The devices contain a Ga ion‐irradiated region where the metal‐to‐insulator transition critical temperature is lowered, a useful feature for controlling neuron‐like spiking behavior. Results show that strain, induced by crystal lattice mismatch between the pristine and irradiated material, leads to a suppression of the metal‐to‐insulator‐transition. Suppression occurs within the irradiated region or along its edges, depending on the defect‐distribution and the size of the region. The observed self‐straining effect can extend to other phase‐change oxides and dominate as device dimensions are reduced and become too small to dissipate strain within the irradiated region. The findings are important for phase engineering in phase‐change devices and highlight the necessity to study phase transitions at the nanoscale.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Yb:Lu 2 O 3 hydrothermally grown single-crystal high-resolution absorption spectra obtained between 8 and 300 K

Here we present new high-resolution absorption data for the important sesquioxide laser material Yb:Lu 2 O 3 for the spectral range of 880–1020 nm, at various temperatures between 8 and 300 K, and for the zero-phonon region from 960 to 990 nm, at temperatures from 8 to 300 K. We have experimentally observed the C 3i (0,1)–(1,3) transition for the first time, located at 880.7 nm at 8 K. Based on high confidence fitting functions to the experimental data, we provide the first complete compilation of all observed electronic and electronic–vibrational transitions. Detailed fitting and plots of the C 2 and C 3i zero-line data show an evolution of the linewidth from being predominantly electronic below about 100 K to being dominated by thermal processes above 100 K. We have also found evidence for a “soft” phase transition between 80 and 100 K that changes the local coordination environment.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Tuning the melting point and phase stability of rare-earth oxides to facilitate their crystal growth from the melt

The challenge of growing rare-earth (RE) sesquioxide crystals can be overcome by tailoring their structural stability and melting point via composition engineering. This work contributes to the advancement of the field of crystal growth of high-entropy oxides. A compound with only small REs (Lu,Y,Ho,Yb,Er) 2 O 3 maintains a cubic C-type structure upon cooling from the melt, as observed via in-situ high-temperature neutron diffraction on aerodynamically levitated samples. On the other hand, a compound with a mixture of small and large REs (Lu,Y,Ho,Nd,La) 2 O 3 crystallizes as a mixture of a primary C-type phase with an unstable secondary phase. Crystals of compositions (Lu,Y,Ho,Nd,La) 2 O 3 and (Lu,Y,Gd,Nd,La) 2 O 3 were grown by the micro-pulling-down (mPD) method with a single monoclinic B-type phase, while a powder of (Lu,Y,Ho,Yb,Er) 2 O 3 did not melt at the maximum operating temperature of an iridium-rhenium crucible. The minimization of the melting point of the two grown crystals is attributed to the mismatch in cation sizes. The electron probe microanalysis reveals that the general element segregation behavior in the crystals depends on the composition.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Lattice Dynamics and Structural Phase Transitions in Eu 2 O 3

Using the density functional theory, we study the structural and lattice dynamical properties of europium sesquioxide (Eu 2 O 3 ) in the cubic, trigonal, and monoclinic phases. The obtained lattice parameters and energies of the Raman modes show a good agreement with the available experimental data. The Eu-partial phonon density of states calculated for the cubic structure is compared with the nuclear inelastic scattering data obtained from a 20 nm thick Eu 2 O 3 film deposited on a YSZ substrate. A small shift of the experimental spectrum to higher energies results from a compressive strain induced by the substrate. On the basis of lattice and phonon properties, we analyze the mechanisms of structural transitions between different phases of Eu 2 O 3 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Interaction of Molecular Hydrogen on α-Pu at 300 K: Nucleation of Hydrides and Pu-Catalyzed Carbides

An α-Pu sample was studied in its “as-received” and “sputtered” state by both X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectroscopy (ToF-SIMS). Analysis of the “as-received” surface indicated significant carbon and oxygen, with oxygen signal pertaining to plutonium dioxide (PuO 2 ) and sesquioxide (Pu 2 O 3 ). The “sputtered” clean metal surface was then dosed with hydrogen (H 2 ) gas at 300 K and found to nucleate hydride species (PuH x ). Interestingly, H 2 was observed to be critical for nucleation of carbides (Pu x C y ) by acting as a catalyst for Pu’s reaction with background gases. Because Pu metal has a high affinity for oxygen, reoxidation occurred under UHV, forming Pu x O y and disrupting both PuH x and Pu x C y growth. Observations from the experiments were modeled for the α-Pu(020) surface, illustrating the ability of H 2 to readily dissociate onto sputtered and speciated surfaces at 300 K. The projected density of states from these calculations were compared to experiments, showing good agreement between the Pu 5f, 6d, and 7s states and the H 1s, O 2p, and C 2p valence states. Overall, the above results indicated that the formed hydride layer is unstable at 300 K in UHV conditions.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Raman spectroscopic study of anhydrous and hydrous REE phosphates, oxides, and hydroxides

Rare earth elements (REE) include the lanthanides (La–Lu), Y, and Sc which are critical elements for the green energy transition. The REE show a decrease in ionic radii with increased atomic numbers, which results in a so-called lanthanide contraction systematically affecting crystal structures and mineral properties. Here we present a compilation of reference Raman spectra of ten REE sesquioxides (A-, B- and C-type), five REE hydroxides, eight xenotime-structured REE phosphate endmembers and two solid solutions, seven monazite-structured REE phosphate endmembers and two solid solutions and seven rhabdophane endmembers with up to five Ce 1–x LREE x rhabdophane solid solutions (LREE = La–Gd). Raman mode assignment is based on a detailed literature review summarizing existing analytical work and theoretical calculations and systematic trends observed in this study by analyzing different REE-bearing solids. Here, the wavenumbers of the main REE-O Raman band systematically increase with decreasing ionic radii forming discrete linear trends within isostructural mineral groups, that can be used to estimate the REE-O mode in other solids with known REE-O coordination numbers. Photoluminescence using 266 nm, 532 nm and 633 nm excitation laser wavelengths for REE-bearing oxides, hydroxides, anhydrous and hydrous phosphates is also presented providing a new framework for identifying REE-phases in phosphate-bearing natural mineral deposits.

58 GEOSCIENCES↗
DOE OSTI2020

Acoustoelectric drag current in vanadium oxide films

Two different Mott insulator wires, vanadium dioxide and vanadium sesquioxide, were prepared on the piezoelectric LiNbO 3 substrates. Coupling of acoustic waves propagating in LiNbO 3 with free carriers in vanadium oxide gives rise to the acoustoelectric effect that manifests itself as the generation of direct electric current by the acoustic wave. According to a phenomenological model, the value of the effect strongly depends on the wires conductivity, which, for the vanadium-oxide films, changes by a few orders of magnitude. We demonstrated that this yields a significant enhancement of the direct current (DC) current generated in the wires at the metal–insulator transition temperatures. The sign of the generated DC voltage is different for excitations by surface and bulk acoustic wave modes, which may happen due to reverse wave propagation at the substrate surface. For each resonance mode, polarities of the generated DC signal are the same in both wires, despite the signs of charge carriers being different for these materials. It was shown that two complementary techniques (acoustoelectric and Hall effect measurements) yield opposite signs of charge carriers in VO 2 .

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Percolation and nanosecond fluctuators in V 2 O 3 films within the metal–insulator transition

Vanadium sesquioxide (V 2 O 3 ) exhibits a metal–insulator transition (MIT) at 160 K between a low temperature, monoclinic, antiferromagnetic Mott insulator and a high temperature, rhombohedral, paramagnetic, metallic phase. In thin films, a percolative transition takes place over a finite temperature range of phase coexistence. We study the fluctuating dynamics of this percolative MIT by measuring voltage noise spectra at both low frequencies (up to 100 kHz) and radio frequencies (between 10 MHz and 1 GHz). Noise intensity quadratic in bias is observed in the MIT region, as expected for resistive fluctuations probed nonperturbatively by the current. The low frequency noise resembles flicker-type 1/f β noise, often taking on the form of Lorentzian noise dominated by a small number of fluctuators as the volume fraction of the insulating phase dominates. Radio frequency noise intensity also quadratic in the bias current allows the identification of resistance fluctuations with lifetimes below 1 ns, approaching timescales seen in non-equilibrium pump–probe studies of the transition. We find quantitative consistency with a model for fluctuations in the percolative fraction. The thermodynamics of the MIT suggests that dominant fluctuations are ones that alter small volumes affecting the connectivity of domain boundaries. This noise serves as a sensitive and nonperturbative probe for the dynamics of switching phenomena in this system.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Wide bandgap semiconductor materials and devices

The technological and societal impacts of electronic devices based on Ge, Si, and compound semiconductors like GaAs have been profound, fueling the decades long quest in identifying ever-larger bandgap semiconductors to untap new applications and possibilities. Specifically, an increase in the bandgap leads to shorter wavelength emission and an increased breakdown electric field, which has direct consequences for solid-state lighting like light-emitting diodes (LEDs) and laser diodes (LDs) from the visible (blue-green, blue, and violet) and beyond (UV and deep-UV) spectral range and for radically improved power devices supported by a higher intrinsic breakdown strength. Wide bandgap (WBG) semiconductors represent the frontier of materials that satisfy these criteria and include group IV, III–V, and II–VI material families like SiC (3.2 eV), GaN (3.4 eV), and ZnO (3.4 eV), respectively. With even larger bandgaps exceeding 4 eV, ultrawide bandgap (UWBG) semiconductors include diamond, III-nitrides incorporating Al and B (e.g., AlN, BN, and AlGaN), and sesquioxides like Ga 2 O 3 and (Al,Ga) 2 O 3 . These materials span widely varying stages of technological maturity, with SiC and GaN platforms among the most mature with commercially available devices in RF and high-power electronics, while other platforms such as Ga 2 O 3 rapidly advancing and poised to enable new UV and deep-UV optoelectronic devices. This Special Topic on Wide Bandgap Semiconductor Materials and Devices covers broad research subtopics on WBG and UWBG materials that span bulk crystals, epitaxy and substrate technologies, fundamental defect science, and doping, as well as electronic and optoelectronic device fabrication and characterization. Here, we highlight works from the collection, which we categorize by material platform of SiC, III-nitrides, and Ga 2 O 3 and related alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Crystal structure and magnetism of actinide oxides: a review

In actinide systems, the 5f electrons experience a uniquely delicate balance of effects and interactions having similar energy scales, which are often difficult to properly disentangle. This interplay of factors such as the dual nature of 5f-states, strong electronic correlations, and strong spin–orbit coupling results in electronically unusual and intriguing behavior such as multi-k antiferromagnetic ordering, multipolar ordering, Mott-physics, mixed valence configurations, and more. Despite the inherent allure of their exotic properties, the exploratory science of even the more basic, binary systems like the actinide oxides has been limited due to their toxicity, radioactivity, and reactivity. In this article, we provide an overview of the available synthesis techniques for selected binary actinide oxides, including the actinide dioxides, sesquioxides, and a selection of higher oxides. For these oxides, here we also review and evaluate the current state of knowledge of their crystal structures and magnetic properties. In many aspects, substantial knowledge gaps exist in the current body of research on actinide oxides related to understanding their electronic ground states. Bridging these gaps is vital for improving not only a fundamental understanding of these systems but also of future nuclear technologies. To this end, we note the experimental techniques and necessary future investigations which may aid in better elucidating the nature of these fascinating systems.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Relationship between atomic and electronic structure in Ln-bearing oxides

Metastable states of matter are of great interest as they offer the promise of novel functionality. They are often a natural consequence of exposure to nonequilibrium environments. In oxides, metastability can take the form of new polymorphs, chemical disorder, and even amorphization. While significant attention has been given to the impact those changes have on the atomic properties of the material, the corresponding changes in the electronic structure have received less attention. Here, using density functional theory, we consider how the electronic structure varies with potential metastable structures in two classes of lanthanide-bearing oxides—pyrochlores and interlanthanide sesquioxides. We find that the changes depend strongly on both the crystal structure and crystal chemistry of the compound with, for example, disordering and amorphization either increasing or decreasing the bandgap depending on the chemistry. For the 𝐴 2 ⁢𝐵 2 ⁢O 7 pyrochlores, we find different dependencies of the bandgap on the 𝐴 = 𝐿⁢𝑛 cations as the 𝐵 cation is changed, which we relate to the nature of the density of states at the conduction band minimum for different 𝐵 chemistries. Our calculations are validated by electron energy loss spectroscopy measurements for two pyrochlore compounds in which amorphization does reduce the bandgap, consistent with our calculations on these two compounds. In conclusion, our results highlight the relationship between atomic and electronic structure and how radiation can be used to modify and potentially control the electronic properties of oxides.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Metal-insulator transition in V 2 O 3 with intrinsic defects

Vanadium sesquioxide (V 2 O 3 ) is a Mott insulator exhibiting a temperature-dependent metal-insulator transition (MIT) at 165 K accompanied by both a magnetic and structural transition. Although it is expected to be a metal under conventional band theory, electron interactions at low temperature cause it to behave like an insulator, making it difficult to accurately model its electronic properties with standard ab initio methods. As such, accurate theoretical assessments of the MIT with point defects requires special attention to the type of functionals used. In this study, we conclude that the PBE + U functional provides the best compromise between accuracy and efficiency in calculating the properties related to the MIT between low-temperature and high-temperature V 2 O 3 . We use this functional to explore the various influences that intrinsic point defects will have on the MIT in V 2 O 3 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Antiferromagnetic V 2 ⁢O 3 based exchange coupling

Vanadium sesquioxide (V 2 ⁢O 3 ) is a strongly correlated electronic material that famously undergoes a triple coupled first-order transition where it transitions from a paramagnetic metal with a rhombohedral structure at high temperature to an antiferromagnetic insulator with a monoclinic structure. While several studies have used one of both electronic and structural transitions to control the properties of a heterostructure, evidence of magnetic coupling has notoriously yet to be found. In this paper, we report on a robust magnetic coupling between the antiferromagnetic (AFM) V 2 ⁢O 3 and ferromagnetic (FM) Permalloy (Py) layers that results in a significant exchange bias and strain-induced coercivity enhancement. We provide a temperature and angle-dependent study of magnetic properties, which clearly indicates exchange bias at the AFM/FM interface that appears at the onset of the metal-insulator transition. The magnitude of the exchange bias is strongest when the field is applied along the [001] V 2 ⁢O 3 crystallographic orientation which corresponds to an AFM spin configuration on the [110] surface. Here, this opens the door to designing and implementing novel functionalities in transition metal oxide-based computing using the connection between magnetism and the metal-insulator transition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

FEFF analysis of americium oxides

The Am N 4,5 (4d 3/2 and 4d 5/2 ) and Am O 4,5 (5d 3/2 and 5d 5/2 ) x-ray absorption spectroscopy (XAS) of americium sesquioxide (Am 2 O 3 ) and americium dioxide (AmO 2 ) has been evaluated with FEFF, a Green's function–based, multiple scattering code. Taking guidance from the intermediate coupling model (ICM), applicable to local and nonmagnetized samples, it is possible to completely reconstruct the experimental results for the N 4,5 spectra, including the observed differences between the Am 2 O 3 and the AmO 2 cases. Although complicated by a more asymmetric line shape and difficult background variations, the FEFF analysis confirms the absence of core hole angular momentum coupling in Am O 4,5 spectroscopy.

36 MATERIALS SCIENCE↗
NASA NTRS1973

Thermogravimetric study of the reduction of oxides of nickel and chromium

The controlled hydrogen, carbon, and hydrogen-carbon reductions of the oxides of nickel and chromium were evaluated by thermogravimetric means. The materials studied were nickel (nickelous) oxide (NiO) and chromic sesquioxide (Cr2O3), mixed NiO-Cr2O3, and oxidized nickel - 20-percent chromium (Ni-20Cr). NiO was effectively reduced by all three atmospheres, Cr2O3 only by hydrogen-carbon, NiO-Cr2O3 by hydrogen and hydrogen-carbon, and oxidized Ni-20Cr by hydrogen and hydrogen-carbon and to a considerable extent by carbon alone. The results suggest that the presence of nickel promotes the reduction of Cr2O3. However, no definite explanation could be reached for the effectiveness of the hydrogen-carbon reduction of Cr2O3.

Herbell, T. P.↗
NASA NTRS1974

Effects of composition and testing conditions on oxidation behavior of four cast commercial nickel-base superalloys

Four cast nickel-base superalloys were oxidized at 1000 and 1100 C for times up to 100 hr in static air and a Mach 1 gas stream. The oxidation resistance was judged by weight change, metal thickness loss, depletion-zone formation, and oxide formation and morphology. The alloys which formed mostly nickel aluminate (NiAl2O4) and aluminum oxide (Al2O3) (B-1900, VIA, and to a lesser extent 713C) were more oxidation resistant. Poorer oxidation resistance was associated with the appearance of chromium sesquioxide (Cr2O3) and chromite spinel (738X). Refractory metal content had little effect on oxidation resistance. Refractory metals appeared in the scale as tapiolite (NiM2O6, where M represents the refractory metal). Thermal cycling in static air appeared to supply sufficient data for the evaluation of oxidation resistance, especially for alloys which form oxides of low volatility. For alloys of higher chromium levels with high propensities toward forming a chromium-bearing scale of higher volatility, testing under conditions of high gas velocity is necessary to assess fully the behavior of the alloy.

Lowell, C. E.↗
NASA NTRS1978

Condensation of nonequilibrium phases of refractory silicates from the vapor

Silicon monoxide solid was evaporated in a bell jar containing reducing, neutral, or oxidizing atmospheres at pressures of a few torr. The vapor invariably condensed as smoke-sized particles of silicon sesquioxide, Si2O3. The condensation of a solid whose composition differs from that of the parent gas and is apparently the least stable of the three solid species illustrates the importance of specific nucleation effects in the condensation process. This result has significant implications for theories of formation of grains in space.

Day, K. L.↗