Search NASA⌕ Search

SEARCH · Search NASA

Results for “single event transients”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2

Single Event Transient Response of Vertical and Lateral Waveguide-Integrated Germanium Photodiodes

Pulsed-laser induced single event current measurements on two geometries of waveguide-integrated germanium photodiodes were conducted over a range of operating voltages to examine the impact of photodiode geometry on the transient response. Vertical PIN photodiodes exhibit transients with a duration that is relatively independent of the operating voltage while the transient duration in lateral PIN photodiodes depends on operating voltage. Furthermore, the experimental measurements facilitate identification of device dimensions that impact the transient response. In this work, these results can be used to identify potential radiation mitigation strategies for photodiodes operating in a radiation environment. Understanding the implications of design choices is critical for designing integrated photonic systems that balance system performance with tolerance for radiation degradation.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Mechanisms of Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Single Event Transients in an Epitaxial Silicon Diode

Heavy ion-, focused X ray-, and pulsed laser induced single event effects in an epitaxial silicon diode were simulated using Sentaurus Technology Computer Aided Design (TCAD). The variation of the potential with time in simulation agrees with previous experimental data, which suggests that the different radiation sources result in different amounts of potential modulation. The charge generation spatial profile strongly affects the potential modulation. The longitudinal range and starting location of generated charge most strongly impacts the amount of potential modulation, while the radial width has a slight effect, and the temporal duration of charge injection has negligible impact on potential modulation

Kaitlyn L. Ryder↗

Single Event Transients in Linear Integrated Circuits

On November 5, 2001, a processor reset occurred on board the Microwave Anisotropy Probe (MAP), a NASA mission to measure the anisotropy of the microwave radiation left over from the Big Bang. The reset caused the spacecraft to enter a safehold mode from which it took several days to recover. Were that to happen regularly, the entire mission would be compromised, so it was important to find the cause of the reset and, if possible, to mitigate it. NASA assembled a team of engineers that included experts in radiation effects to tackle the problem. The first clue was the observation that the processor reset occurred during a solar event characterized by large increases in the proton and heavy ion fluxes emitted by the sun. To the radiation effects engineers on the team, this strongly suggested that particle radiation might be the culprit, particularly when it was discovered that the reset circuit contained three voltage comparators (LM139). Previous testing revealed that large voltage transients, or glitches appeared at the output of the LM139 when it was exposed to a beam of heavy ions [NI96]. The function of the reset circuit was to monitor the supply voltage and to issue a reset command to the processor should the voltage fall below a reference of 2.5 V [PO02]. Eventually, the team of engineers concluded that ionizing particle radiation from the solar event produced a negative voltage transient on the output of one of the LM139s sufficiently large to reset the processor on MAP. Fortunately, as of the end of 2004, only two such resets have occurred. The reset on MAP was not the first malfunction on a spacecraft attributed to a transient. That occurred shortly after the launch of NASA s TOPEX/Poseidon satellite in 1992. It was suspected, and later confirmed, that an anomaly in the Earth Sensor was caused by a transient in an operational amplifier (OP-15) [KO93]. Over the next few years, problems on TDRS, CASSINI, [PR02] SOHO [HA99,HA01] and TERRA were also attributed to transients. In some cases, such events produced resets by falsely triggering circuits designed to protect against over- voltage or over-current. On at least three occasions, transients caused satellites to switch into "safe mode" in which most of the systems on board the satellites were powered down for an extended period. By the time the satellites were reconfigured and returned to full operational state, much scientific data had been lost. Fortunately, no permanent damage occurred in any of the systems and they were all successfully re-activated.

Buchner, Stephen↗

Single-Event Transient Testing of Low Dropout PNP Series Linear Voltage Regulators

As demand for high-speed, on-board, digital-processing integrated circuits on spacecraft increases (field-programmable gate arrays and digital signal processors in particular), the need for the next generation point-of-load (POL) regulator becomes a prominent design issue. Shrinking process nodes have resulted in core rails dropping to values close to 1.0 V, drastically reducing margin to standard switching converters or regulators that power digital ICs. The goal of this task is to perform SET characterization of several commercial POL converters, and provide a discussion of the impact of these results to state-of-the-art digital processing IC through laser and heavy ion testing

Adell, Philippe↗

Single-event transient testing of low dropout PNP series linear voltage regulators

As demand for high-speed, on-board, digital-processing integrated circuits on spacecraft increases (field-programmable gate arrays and digital signal processors in particular), the need for the next generation point-of-load (POL) regulator becomes a prominent design issue. Shrinking process nodes have resulted in core rails dropping to values close to 1.0 V, drastically reducing margin to standard switching converters or regulators that power digital ICs. The goal of this task is to perform SET characterization of several commercial POL converters, and provide a discussion of the impact of these results to state-of-the-art digital processing IC through laser and heavy ion testing

Allen, Gregory↗

Board Level Proton Testing Book of Knowledge for NASA Electronic Parts and Packaging Program

This book of knowledge (BoK) provides a critical review of the benefits and difficulties associated with using proton irradiation as a means of exploring the radiation hardness of commercial-off-the-shelf (COTS) systems. This work was developed for the NASA Electronic Parts and Packaging (NEPP) Board Level Testing for the COTS task. The fundamental findings of this BoK are the following. The board-level test method can reduce the worst case estimate for a board's single-event effect (SEE) sensitivity compared to the case of no test data, but only by a factor of ten. The estimated worst case rate of failure for untested boards is about 0.1 SEE/board-day. By employing the use of protons with energies near or above 200 MeV, this rate can be safely reduced to 0.01 SEE/board-day, with only those SEEs with deep charge collection mechanisms rising this high. For general SEEs, such as static random-access memory (SRAM) upsets, single-event transients (SETs), single-event gate ruptures (SEGRs), and similar cases where the relevant charge collection depth is less than 10 μm, the worst case rate for SEE is below 0.001 SEE/board-day. Note that these bounds assume that no SEEs are observed during testing. When SEEs are observed during testing, the board-level test method can establish a reliable event rate in some orbits, though all established rates will be at or above 0.001 SEE/board-day. The board-level test approach we explore has picked up support as a radiation hardness assurance technique over the last twenty years. The approach originally was used to provide a very limited verification of the suitability of low cost assemblies to be used in the very benign environment of the International Space Station (ISS), in limited reliability applications. Recently the method has been gaining popularity as a way to establish a minimum level of SEE performance of systems that require somewhat higher reliability performance than previous applications. This sort of application of the method suggests a critical analysis of the method is in order. This is also of current consideration because the primary facility used for this type of work, the Indiana University Cyclotron Facility (IUCF) (also known as the Integrated Science and Technology (ISAT) hall), has closed permanently, and the future selection of alternate test facilities is critically important. This document reviews the main theoretical work on proton testing of assemblies over the last twenty years. It augments this with review of reported data generated from the method and other data that applies to the limitations of the proton board-level test approach. When protons are incident on a system for test they can produce spallation reactions. From these reactions, secondary particles with linear energy transfers (LETs) significantly higher than the incident protons can be produced. These secondary particles, together with the protons, can simulate a subset of the space environment for particles capable of inducing single event effects (SEEs). The proton board-level test approach has been used to bound SEE rates, establishing a maximum possible SEE rate that a test article may exhibit in space. This bound is not particularly useful in many cases because the bound is quite loose. We discuss the established limit that the proton board-level test approach leaves us with. The remaining possible SEE rates may be as high as one per ten years for most devices. The situation is actually more problematic for many SEE types with deep charge collection. In cases with these SEEs, the limits set by the proton board-level test can be on the order of one per 100 days. Because of the limited nature of the bounds established by proton testing alone, it is possible that tested devices will have actual SEE sensitivity that is very low (e.g., fewer than one event in 1 × 10(exp 4) years), but the test method will only be able to establish the limits indicated above. This BoK further examines other benefits of proton board-level testing besides hardness assurance. The primary alternate use is the injection of errors. Error injection, or fault injection, is something that is often done in a simulation environment. But the proton beam has the benefit of injecting the majority of actual SEEs without risk of something being missed, and without the risk of simulation artifacts misleading the SEE investigation.

Guertin, Steven M.↗

SEE Test Report for Texas Instruments TLV5618 2.7-V to 5.5-V Low-Power Dual 12-Bit Digital-to-Analog Converter with Power Down

The primary purpose of this testing was to characterize the Texas Instruments TLV5618 12-bit digital-to-analog converter (DAC) for single-event latchup (SEL) susceptibility. These data will be used to assess the SEL risk for the OSIRIS-REx Laser Altimeter (OLA). A secondary goal is to assess the susceptibility of the DAC to single-event transients (SET), single-event upsets (SEU), and other nondestructive SEE.

Raymond Ladbury↗

Analysis and Simulations of Space Radiation Induced Single Event Effects and Transients

Spacecraft electronic are affected by the space radiation environment. Among the different types of radiation effects that can affect spacecraft electronics is the single event transient (SET). The space environment is responsible for many of the single event transients which can upset the performance of the spacecraft avionics hardware. In this chapter we first explore the origins of single event transients, then explore the modeling of a single event transient in digital and analog circuit. The chapter also addresses the concept of crosstalk that could develop among digital circuits in the present of a SET event. The chapter also provides a discussion of SET hardening. We then provide a discussion concerning propagation of a single event transient event at the local, subsystem, and system level in a spacecraft using two different models, one of the models developed by the author, known as the state transition model. The final goal of the chapter is to provide a qualitatively methodology for assessing single event transients and its effects so that spacecraft avionics engineers can develop either hardware or software countermeasures in their designs. SET is not a form of electromagnetic interference (EMI) in its origin, but semantically SET is very similar to EMI because they are both caused a current source not previously accounted for. SET has the same effects as EMI and it can cause interference problems in electronic circuits via multiple coupling mechanisms similar to EMI, and therefore makes such circuits incompatible.

Perez, Reinaldo J.↗

Single event induced transients in I/O devices - A characterization

The results of single-event upset (SEU) testing performed to evaluate the parametric transients, i.e., amplitude and duration, in several I/O devices, and the impact of these transients are discussed. The failure rate of these devices is dependent on the susceptibility of interconnected devices to the resulting transient change in the output of the I/O device. This failure rate, which is a function of the susceptibility of the interconnected device as well as the SEU response of the I/O device itself, may be significantly different from an upset rate calculated without taking these factors into account. The impact at the system level is discussed by way of an example.

Newberry, D. M.↗