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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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23 records · Page 2

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DOE OSTI2021

Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation

Heavy ion, focused x-ray, and pulsed laser single event transient experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between the different sources. It is observed that these transient shape characteristics depend on the source (ion, x-ray, or laser), even when similar amounts of charge are generated. Finally, the observed differences are examined and explained in terms of basic charge collection mechanisms.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

NASA NTRS2021

Angle Dependence of Focused X-Ray-Induced Single Event Transients in an Epitaxial Silicon Diode

Focused X-Ray single event transient (SET) experiments are performed at small angles on an epitaxial silicon diode at two reverse bias conditions. For both biases, the collected charge and peak current results follow the cosine law, while the transient fall time remains independent of incident angle. This demonstrates that only the amount of charge being generated is affected by angle and not the fundamental device response.

Heavy ions↗

NASA NTRS2022

Angle Dependence of Focused X-Ray-Induced Single Event Transients in an Epitaxial Silicon Diode

Focused X-ray↗

NASA NTRS2003

Broad Beam and Ion Microprobe Studies of Single-Event Upsets in High Speed 0.18micron Silicon Germanium Heterojunction Bipolar Transistors and Circuits

Combining broad-beam circuit level SEU response with ion microprobe tests on single silicon germanium heterojunction bipolar transistors allows for a better understanding of the charge collection mechanisms responsible for SEU response of HBT technology.

Robert A Reed↗

NASA NTRS2004

Single-event upset in highly scaled commercial silicon-on-insulator PowerPc microprocessors

Single event upset effects from heavy ions are measured for Motorola and IBM silicon-on-insulator (SOI) microprocessors with different feature sizes, and core voltages. The results are compared with results for similar devices with build substrates. The cross sections of the SOI processors are lower than their bulk counterparts, but the threshold is about the same, even though the charge collections depth is more than an order of magnitude smaller in the SOI devices. The scaling of the cross section with reduction of feature size and core voltage dependence for SOI microprocessors discussed.

single event upset (SEU)↗