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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2

Numerical simulation of solidification in a horizontal cylindrical annulus charged with an aqueous salt solution

A computational study of solidification of a binary Na2CO3 solution in a horizontal cylindrical annulus is performed using a continuum formulation with a control-volume based, finite-difference scheme. The initial conditions were selected to facilitate the study of counter thermal and solutal convection, accompanied by extensive mushy region growth. Numerical results are compared with experimental data with mixed success. Qualitative agreement is obtained for the overall solidification process and associated physical phenomena. However, the plume thickness calculated for the solutally-driven convective upflow is substantially smaller than the observed value. Evolution of double-diffusive layers is predicted, but over a time scale much smaller than that observed experimentally. Good agreement is obtained between predicted and measured results for solid growth, but the mushy region thickness is significantly overpredicted.

Neilson, D. G.↗

Automated microorganism Sample Collection Module

Modified Gelman Sampler obtains representative sample of microorganism population. Proposed Sample Collection Module is based on direct inoculation of selected solid growth media encased in a cartridge at all times except during inoculation. Cartridge can be handled with no danger of contamination to sample or operator.

Gall, L. S.↗

Silicon nanowire synthesis by a vapor-liquid-solid approach

Synthesis of silicon nanowires is studied by using a vapor-liquid-solid growth technique. Silicon tetrachloride reduction with hydrogen in the gas phase is used with gold serving as catalyst to facilitate growth. Only a narrow set of conditions of SiCl4 concentration and temperature yield straight nanowires. High concentrations and temperatures generally result in particulates, catalyst coverage and deactivation, and coatinglike materials.

Evaluation Studies↗

Next Generation Microbiology Requirements

As humans continue to explore deep into space, microorganisms will travel with them. The primary means to mitigate the risk of infectious disease are a combination of prudent spacecraft design and rigorous operational controls. The effectiveness of these methods are evaluated by microbiological monitoring of spacecraft, food, water, and the crew that is performed preflight, in-flight, and post-flight. Current NASA requirements associated with microbiological monitoring are based on culture-based methodology where microorganisms are grown on a semi-solid growth medium and enumerated. Subsequent identification of the organisms requires specialized labor and large equipment, which historically has been performed on Earth. Requirements that rely strictly on culture-based units limit the use of non-culture based monitoring technology. Specifically, the culture-based "measurement criteria" are Colony Forming Units (CFU, representing the growth of one microorganism at a single location on the agar medium) per a given volume, area, or sample size. As the CFU unit by definition is culture-based, these requirements limit alternative technologies for spaceflight applications. As spaceflight missions such as those to Mars extend further into space, culture-based technology will become difficult to implement due to the (a) limited shelf life of the culture media, (b) mass/volume necessary to carry these consumables, and (c) problems associated with the production of biohazardous material in the habitable volume of the spacecraft. In addition, an extensive amount of new knowledge has been obtained during the Space Shuttle, NASA-Mir, and International Space Station Programs, which gave direction for new or modified microbial control requirements for vehicle design and mission operations. The goal of this task is to develop and recommend a new set of requirements for vehicle design and mission operations, including microbiological monitoring, based upon "lessons learned" and new technology. During 2011, this study focused on evaluating potable water requirements by assembling a forum of internal and external experts from NASA, other federal agencies, and academia. Key findings from this forum included: (1) Preventive design and operational strategies should be stringent and the primary focus of NASA's mitigation efforts, as they are cost effective and can be attained with conventional technology. (2) Microbial monitoring hardware should be simple and must be able to measure the viability of microorganisms in a sample. Multiple monitoring technologies can be utilized as long as at the microorganisms being identified can also be confirmed as viable. (3) Evidence showing alterations in the crew immune function and microbial virulence complicates risk assessments and creates the need for very conservative requirements. (4) One key source of infectious agents will always be the crew, and appropriate preventative measures should be taken preflight. (5) Water systems should be thoroughly disinfected (sterilized if possible) preflight and retain a residual biocide throughout the mission. Future forums will cover requirements for other types of samples, specifically spaceflight food and environmental samples, such as vehicle air and vehicle and cargo surfaces. An interim report on the potable water forum has been delivered to the Human Research Program with a final report on the recommendations for all sample types being delivered in September 2013.

Ott, C. M.↗

Oxygen scrubbing and sensing in plant growth chambers using solid oxide electrolyzers

The maintenance of optimal levels of oxygen in the gaseous environment of a plant growth chamber during light and dark periods is an essential criterion for the correct growth of plants. The use of solid oxide electrolyzers to control the oxygen levels by removing the excess gaseous oxygen during periods of illumination and full-scale photosynthesis is described. A part of the oxygen removed can be stored and supplied back to the plants during dark periods. The excess oxygen can be used by the crew. The electrolizer can be additionally used in its open circuit mode, to sense the oxygen concentrations in the plant chamber. The solid oxide electrolysis process is described.

Sridhar, K. R.↗

Slow and fast motion of cracks in inelastic solids. Part 1: Slow growth of cracks in a rate sensitive tresca solid. Part 2: Dynamic crack represented by the Dugdale model

An extension is proposed of the classical theory of fracture to viscoelastic and elastic-plastic materials in which the plasticity effects are confined to a narrow band encompassing the crack front. It is suggested that the Griffith-Irwin criterion of fracture, which requires that the energy release rate computed for a given boundary value problem equals the critical threshold, ought to be replaced by a differential equation governing the slow growth of a crack prior to the onset of rapid propagation. A new term which enters the equation of motion in the dissipative media is proportional to the energy lost within the end sections of the crack, and thus reflects the extent of inelastic behavior of a solid. A concept of apparent surface energy is introduced to account for the geometry dependent and the rate dependent phenomena which influence toughness of an inelastic solid. Three hypotheses regarding the condition for fracture in the subcritical range of load are compared. These are: (1) constant fracture energy (Cherepanov), (2) constant opening displacement at instability (Morozov) and (3) final stretch criterion (Wnuk).

Wnuk, M. P.↗

Vapor transport growth of organic solids in microgravity and unit gravity: some comparisons and results to date

Thin films of an organic nonlinear optical (NLO) material, N, N-dimethyl-p-(2,2-dicyanovinyl) aniline (DCVA), have been grown in space and on the ground by physical vapor transport in an effusive ampoule arrangement. The thin film growth technique developed on the ground is a direct result of information gleaned from experiments in microgravity. This paper covers the results of our experimental investigations for establishing "ideal" terrestrial conditions for deposition of a DCVA film. The active control during the deposition process was exercised by three deposition variables: the material source temperature, the background pressure external to the growth ampoule and the substrate temperature. Successful growth occurred when the difference in temperature between the source material and the copper substrate was 14 degrees C and the background nitrogen pressure was such that the transport was either diffusive or convective. A qualitative diffusion limited boundary was estimated to occur at a pressure of approximately 20 torr. We have probed the DCVA thin films with visible-near infrared reflection absorption spectroscopy, polarized Fourier transform infrared spectrometry, differential interference contrast optical microscopy, and stylus profilometry.

short duration↗

Modeling of thin-film GaAs growth

A solid Monte Carlo model is constructed for the simulation of crystal growth. The model assumes thermally accommodated adatoms impinge upon the surface during a delta time interval. The surface adatoms are assigned a random energy from a Boltzmann distribution, and this energy determines whether the adatoms evaporate, migrate, or remain stationary during the delta time interval. For each addition or migration of an adatom, potential wells are adjusted to reflect the absorption, migration, or desorption potential changes.

Heinbockel, J. H.↗

The 3-5 semiconductor solid solution single crystal growth

Techniques used for liquid and vapor phase epitaxy of gallium indium arsenide are described and the difficulties encountered are examined. Results show that the growth of bulk III-V solid solution single crystals in a low gravity environment will not have a major technological impact. The float zone technique in a low gravity environment is demonstrated using cadmium telluride. It is shown that this approach can result in the synthesis of a class of semiconductors that can not be grown in normal gravity because of growth problems rooted in the nature of their phase diagrams.

Gertner, E. R.↗

A potential-energy scaling model to simulate the initial stages of thin-film growth

A solid on solid (SOS) Monte Carlo computer simulation employing a potential energy scaling technique was used to model the initial stages of thin film growth. The model monitors variations in the vertical interaction potential that occur due to the arrival or departure of selected adatoms or impurities at all sites in the 400 sq. ft. array. Boltzmann ordered statistics are used to simulate fluctuations in vibrational energy at each site in the array, and the resulting site energy is compared with threshold levels of possible atomic events. In addition to adsorption, desorption, and surface migration, adatom incorporation and diffusion of a substrate atom to the surface are also included. The lateral interaction of nearest, second nearest, and third nearest neighbors is also considered. A series of computer experiments are conducted to illustrate the behavior of the model.

Heinbockel, J. H.↗

An Experimental Study of Ignition Effects and Flame Growth Over a Thin Solid Fuel in Low-Speed Concurrent Flow Using Drop-Tower Facilities

An experimental study of ignition and flame growth over a thin solid fuel in oxidizer flow speeds from 0 to 10 cm/sec concurrent flow was performed. This study examined the differences between ignition using a resistively heated wire (woven in a sawtooth pattern over the leading edge of the fuel), and a straight resistively heated wire augmented by a chemical ignitor doped onto the leading edge of the fuel. Results showed that the chemical system yielded non-uniform ignition bursts, while the system using only the hotwire gave more uniform ignition. At speeds up to 2.5 cm/sec, the chemical system yielded non-uniform pyrolysis fronts, while the hotwire system gave more uniform pyrolysis fronts. At speeds of 5 cm/sec or greater, both systems gave uniform pyrolysis fronts. The chemically-ignited flames tended to become too dim to see faster than the hotwire-ignited flames, and the flame lengths were observed to be shorter (after the initial burst subsided) for the chemical system for all speeds. Flame and pyrolysis element velocities were measured. Temperature profiles for selected tests were measured using thermocouples at the fuel surface and in the gas phase. Comparisons between the flame element velocities and peak temperatures recorded in these tests with calculated spread rates and peak temperatures from a steady-state model are presented. Agreement was found to be within 20% for most flame elements for nominal velocities of 5 cm/sec and 7.5 cm/sec.

Pettegrew, Richard Dale↗

Analogy between fluid cavitation and fracture mechanics

When the stresses imposed on a fluid are sufficiently large, rupture or cavitation can occur. Such conditions can exist in many two-phase flow applications, such as the choked flows, which can occur in seals and bearings. Nonspherical bubbles with large aspect ratios have been observed in fluids under rapid acceleration and high shear fields. These bubbles are geometrically similar to fracture surface patterns (Griffith crack model) existing in solids. Analogies between crack growth in solid and fluid cavitation are proposed and supported by analysis and observation (photographs). Healing phenomena (void condensation), well accepted in fluid mechanics, have been observed in some polymers and hypothesized in solid mechanics. By drawing on the strengths of the theories of solid mechanics and cavitation, a more complete unified theory can be developed.

Hendricks, R. C.↗

Modelling melt-solid interfaces in Bridgman growth

Doped epoxy models with abrupt interfaces were prepared to test radiographic and computer enhancement procedures used to study the images of melt-solid interfaces during crystal growth in Bridgman furnaces. A column averaging procedure resulted in improved images that faithfully reproduced the positions and shapes of interfaces even at very low density differences. These techniques were applied to lead tin telluride growing in Bridgman furnaces.

Barber, Patrick G.↗

The Science of Detached Bridgman Growth and Solutocapillary Convection in Solid Solution Crystals

Bridgman and Float-zone crystal growth experiments are planned for NASA's First Materials Science Research Rack using the European Space Agency's Materials Science Laboratory with the Low Gradient Furnace (LGF) and Float Zone Furnace with Rotating Magnetic Field (FMF) inserts, respectively. Samples will include germanium and germanium-silicon alloys with up to 10 atomic percent silicon. The Bridgman part of the investigation includes detached growth samples and so there will be a solid-liquid-gas tri-junction in those experiments just as there will be in all float-zone experiments. There are other similarities as well as significant differences between the types of growth that will be discussed. The presentation will call attention to the reasons that experiments in microgravity will provide information unattainable from Earth-based experiments.

Szofran, F. R.↗

Material growth and characterization for solid state devices

During this period InGaAs and InGaAsP were grown on (100)InP by liquid phase electroepitaxy (LPEE). Results of the epitaxial growth of InGaAs on sputtered quartz masked substrates are presented. The resulting surface morphology can be related to the current density distribution near the edges of a masked pattern. The quaternary InGaAs was grown with compositions corresponding to 1.3 micron and 1.5 micron emission wavelengths. Growth rates were found to be linearly dependent upon current density, and a strong dependence upon composition was noted. These compositions lie in the miscibility gap region of the alloy phase diagram at the 645 C growth temperature. Growths were performed at 685 C to avoid the miscibility gap. Epilayers were characterized by photoluminescence, X-ray diffraction, secondary ion mass spectrometry, and Hall effect measurements. Aluminum oxide was deposited on silicon and InGaAs substrates for the characterization of this material as an insulator in a field effect transistor structure. It was determined that the results did not warrant further work with the deposition from an aluminum isopropoxide source. A metallographic vapor phase epitaxy system installation is nearing completion for use in hybrid III-V semiconductor epilayer growths.

Collis, Ward J.↗

Material growth and characterization for solid state devices

During the period of this research grant, the process of liquid phase electroepitaxy (LPEE) was used to grow ternary and quaternary alloy III-V semiconductor thin films. Selective area growth of InGaAs was performed on InP substrates using a patterned sputtered quartz or spin-on glass layer. The etch back and growth characteristics with respect to substrate orientation were investigated. The etch back behavior is somewhat different from wet chemical etching with respect to the sidewall profiles which are observed. LPEE was also employed to grow epitaxial layers of InGaAsP alloys on InP substrates. The behavior of Mn as an acceptor dopant was investigated with low temperature Hall coefficient and photoluminescence measurements. A metal-organic vapor phase epitaxy system was partially complete within the grant period. This atmospheric pressure system will be used to deposit III-V compound and alloy semiconductor layers in future research efforts.

Collis, Ward J.↗

Material growth and characterization for solid state devices

Manganese was used as the dopant for p-type InGaAs layers grown on semi-insulating (Fe-doped) and n-type (Sn-doped) InP substrates. Optical, electrical (Hall) and SIMS measurements were used to characterize the layers. Mn-diffusion into the substrate (during the growth of In GaAs) was observed only when Fe-doped substrates were used. Quaternary layers of two compositions corresponding to wavelengths (energy gaps) of approximated 1.52 micrometers were successfully grown at a constant temperature of 640 C and InP was grown in the temperature range of 640 C to 655 C. A study of the effect of pulses on the growth velocity of InP indicated no significant change as long as the average applied current was kept constant. A system for depositing films of Al2O3 by the pyrolysis of aluminum isopropoxide was designed and built. Deposited layers on Si were characterized with an ellipsometer and exhibited indices of refraction between 1.582 and 1.622 for films on the order of 3000 A thick. Undoped and p-type (Mn-doped) InGaAs epitaxial layers were also grown on Fe-doped InP substrates through windows in sputtered SiO2 (3200 A thick) layers.

Stefanakos, E. K.↗