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At least 37 records · Page 2

Spin switchable optical phenomena in Rashba band structures through intersystem crossing in momentum space in solution-processing 2D-superlattice perovskite film

Spin-switchable phenomena are a critical element for the development of spintronic and chiroptic devices. Herein we combine a 2D-superlattice perovskite (4,4-DFPD2PbI4) film with a ferromagnetic cobalt (Co) layer to form a multiferroic perovskite/Co interface, and demonstrate spin-switchable circularly polarized luminescence (CPL) between right-handed σ+ and left-handed σ− polarizations. When the ferromagnetic spins of Co at the Co/perovskite interface are altered between positive and negative magnetic field directions, the CPL from the 2D-superlattice perovskite switches from σ+ to σ− polarization. The magnetic field effects present a unique method to confirm that CPL is generated by the circular-orbital momentum of light-emitting excitons within Rashba band structures, eliminating artifacts involving structural birefringence. Our polarized neutron reflectometry measurements confirm a super long-range spin-orbit interaction occurring in the 2D-superlattice perovskite films. The temperature dependence of spin-switchable phenomenon indicates an extraordinarily long orbital polarization lifetime, reaching microseconds at room temperature and milliseconds at 5 K.

36 MATERIALS SCIENCE↗

Solution processed high aspect ratio ultra-long vertically well-aligned ZnO nano scintillators for potential X-ray imaging applications

We report the photon (PL), electron (CL) and X-ray (XEL) induced luminescence characteristics of high aspect ratio ultra-long (~ 50 µm) ZnO nanorods (NRs) and discuss the potential for fast X-ray detection based on the consistent and efficient visible emission (~ 580 nm) from ZnO NRs. Nanostructured ZnO scintillators were rearranged to form a vertically well-aligned NR design in order to help light absorption and coupling resulting in luminescent and fast scintillation properties. The design of the nanorod array combines the key advantages of a low-cost growth technique together with environmentally friendly and widely available materials. A low temperature hydrothermal method was adopted to grow ZnO NRs in one cycle growth and their structural, optical and X-ray scintillation properties were investigated. The relatively short (~ 10 µm) ZnO NRs emitting in the near-band-edge region were found to be almost insensitive to X-rays. On the other hand, the higher XEL response of long ZnO NRs, which is a key parameter for evaluation of materials to be used as scintillators for high quality X-ray detection and imaging, along with a decay time response in the order of ns confirmed promising scintillation properties for fast and high-resolution X-ray detector applications.

47 OTHER INSTRUMENTATION↗

Solution-Processed Oxide Thin Films for Perovskite Photovoltaics (Final Report)

The overarching goal of the voucher project is to evaluate the suitability of NexTC materials as functional layers in perovskite photovoltaic technology. There are several different perovskite device configurations that are being pursued for commercialization. Most are superstrate configuration (light enters the device through the glass substrate) and can be subdivided into two categories: PIN and NIP. At minimum, PIN devices have a transparent conductor (typically Indium Tin Dioxide [ITO] or Fluorine-Doped Tin Oxide [FTO]) and hole transport layer (HTL) deposited on glass before the perovskite is deposited. Alternatively, NIP devices have a transparent conductor and electron transport layer (ETL) deposited before the perovskite is deposited. NexTC produces several inks that can be deposited to replace or modify the transparent conductor and/or the ETL or HTL, depending on the device. NLR will produce PIN and NIP perovskite devices on substrates that have been coated by NexTC and compare to NLR-standard devices that perform among the best for research labs across the world. The work will ultimately expose NexTC products to the up-and-coming perovskite PV industry.

14 SOLAR ENERGY↗

Remote Americium Detection Using an Optical Sensor: A D-Optimal Strategy for Efficient PLS-Based Modeling

A fiber-optic visible–near-infrared absorption spectroscopy system in a glove box was demonstrated for remote quantification of Am(III) (0–500 µM) and HNO 3 (0.1–9 M) using partial least squares regression (PLSR) models. The sensor platform, featuring a simple plug-and-play spectrophotometer, can enable noninvasive, real-time monitoring of actinide process solutions. To establish a flexible PLSR model calibration strategy, a D-optimal design developed using Nd(III) in previous studies was successfully extended to an actinide system with Am(III) to effectively minimize sample set size while maintaining robust prediction performance. The results suggest strong spectral similarities between Nd(III) and Am(III) and validate Nd(III) as an effective optical surrogate for trivalent actinide species. This work also supports the generalizability of a D-optimal training set selection approach for two-factor systems. The PLS1 models for Am(III) and HNO 3 outperformed a PLS2 model and maintained reasonable performance in the presence of interfering U(VI). The resulting sensor system and multivariate approach provides a flexible and scalable solution for process monitoring, control, and safety in diverse nuclear applications.

actinide↗

Selective Isolation of Surface Grain Boundaries by Oxide Dielectrics Improves Cd(Se,Te) Device Performance

Cd(Se,Te) photovoltaics (PV) are the most widely deployed thin-film solar technology globally, yet continued efficiency improvements are stymied by challenges at the device hole contacts. The inclusion of solution-processed oxide layers such as AlGaO x in the contact stack has yielded improved device open-circuit voltages (V OC ) and fill factors (FF). However, contradictory mechanisms by which these layers improve the device properties have been proposed by the research community. We demonstrate in this work that an underappreciated property of such spin-coated layers is the preferential deposition at grain boundaries, a process that isolates the grain boundaries during contact metallization. The effects of grain-boundary isolation are probed by varying the coverage of solution-processed AlGaO x “barrier” layers on the Cd(Se,Te) surface, quantified by scanning Auger microscopy. Examining coverage-dependent V OC and FF, it was observed that isolating the grain boundaries during metallization is sufficient to prevent damage to the absorber that occurs in devices lacking a barrier layer, while additional coverage contributes to the increased series resistance. Such an effect is agnostic to the material used as a barrier layer, as long as the material does not itself damage the absorber. Spin-coated SiO x was used in place of AlGaO x for an equally beneficial effect. This grain-boundary isolation phenomenon is also observed during Mo deposition and in absorbers that have been contacted with a nitrogen-doped ZnTe layer. The mechanisms by which metallization may degrade the absorber are discussed, as are contact design strategies leveraging barrier layers, which may lead to improved device efficiencies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Interface Engineering using Vapor Transport Deposited Perovskite Films for Solar Cells

The overarching goal of this project was to demonstrate the viability of vapor transport deposition (VTD) for the fabrication of efficient and stable metal-halide perovskite solar cells. VTD is a solvent-free alternative to conventional solution-processing of the light-absorbing, perovskite active layer. Since solution-processing frequently requires the use of toxic solvents, transition to a dry-processing approach has the potential to remove an obstacle to facile and economically meaningful commercialization. Further, VTD bears similarity to existing industrially-relevant processing approaches used for the production of thin-film CdTe solar modules, suggesting the potential for rapid adoption and transition to industry. The results described within this report offer design rules for the processing of metal-halide perovskites via VTD and new insights into the design of deposition systems to inform future applications.

14 SOLAR ENERGY↗

Silyl Hot-Injection Versus Thiocyanate Heat-Up Synthesis of Chalcohalides: Pushing the Size and Composition Envelope

Chalcohalide semiconductors are rapidly gaining traction as stable, biocompatible materials for energy conversion applications. While the solid-state synthesis of bulk chalcohalides is relatively well-developed, the colloidal chemistry of these materials is still in its early stages. Colloidal semiconductors are often advantageous in device fabrication due to the cost effectiveness of solution processing. Thus, we aim to increase the utility of chalcohalides in device fabrication by establishing solution phase chemistry of promising compositions. We show that silyl hot-injection is a versatile and effective method of making colloidal PnChI (Pn = Sb, Bi; Ch = S, Se) and Sn 2 PnS 2 I 3 (Pn = Sb, Bi) chalcohalides of tunable sizes and compositions. Furthermore, we demonstrate the preparation of mixed-pnictide chalcohalides through direct hot-injection and/or postsynthetic cation exchange, the latter being one of the few reported instances in chalcohalides. Additionally, we use the thiocyanate heat-up approach in combination with density functional theory to study halide mixing in quaternary tin chalcohalides. By pushing the limits of each synthetic technique, we have designed more soluble chalcohalides with tunable compositions while also gaining a better understanding of the efficacy of each procedure in respect to thin film and subsequent device fabrication. In addition to size and composition tuning, silyl hot-injection can help facilitate the future development and wide-scale application of chalcohalide-based devices by expanding the selection of solution-processable chalcohalides.

halogens↗

Dimensional Control in Phase-Pure Coevaporated Quasi-2D Ruddlesden–Popper Structures

Fast, uncontrolled crystallization with several competing pathways makes solution-processing of phase-pure quasi-two-dimensional (quasi-2D) metal halide Ruddlesden–Popper thin films challenging. Typically, solution-processing results in the formation of different structural phases with varying dimensionality ranging from 2D, to quasi-2D, and 3D, introducing bandgap disorder and inhibiting charge transport. In this work, we eliminate interactions between precursor salts and solvents by using controlled thermal coevaporation to grow quasi-2D thin films that show high phase purity and narrow phase distribution. We study the structural landscape using synchrotron-based X-ray scattering and charge-carrier dynamics using ultrafast pump–probe spectroscopy. We then demonstrate a strategy to control the crystallographic phase of the film through phosphonic acid-based surface modification. We use density functional theory to study the interactions between propylphosphonic acid and the organic precursors and find that the interactions of loosely bound phosphonic acid molecules with evaporated precursors, followed by the migration of phosphonic acids through the deposited thin film, dictate the film structure between 2D and quasi-2D phases. These findings introduce new solvent-free methods for the fabrication of phase-pure quasi-2D Ruddlesden–Popper thin films and control phase selectivity across different dimensional (2D and quasi-2D) structures.

36 MATERIALS SCIENCE↗

A 2D/3D Heterostructure Perovskite Solar Cell with a Phase‐Pure and Pristine 2D Layer

Abstract Interface engineering plays a critical role in advancing the performance of perovskite solar cells. As such, 2D/3D perovskite heterostructures are of particular interest due to their optoelectrical properties and their further potential improvements. However, for conventional solution‐processed 2D perovskites grown on an underlying 3D perovskite, the reaction stoichiometry is normally unbalanced with excess precursors. Moreover, the formed 2D perovskite is impure, leading to unfavorable energy band alignment at the interface. Here a simple method is presented that solves both issues simultaneously. The 2D formation reaction is taken first to completion, fully consuming excess PbI 2 . Then, isopropanol is utilized to remove excess organic ligands, control the 2D perovskite thickness, and obtain a phase‐pure, n = 2, 2D perovskite. The outcome is a pristine (without residual 2D precursors) and phase‐pure 2D perovskite heterostructure with improved surface passivation and charge carrier extraction compared to the conventional solution process. PSCs incorporating this treatment demonstrate a notable improvement in both stability and power conversion efficiency, with negligible hysteresis, compared to the conventional process.

14 SOLAR ENERGY↗

Interlayer Exciton Polarons in Mesoscopic V 2 O 5 for Broadband Optoelectronic Synapses

Persistent photoconductivity and optoelectronic synaptic behavior are demonstrated in solution-processed mesoscopic α-phase vanadium pentoxide (V 2 O 5 ) thin films. First-principles simulations coupled with the two-site Holstein polaron hopping model show that vacancies at the terminal oxygen position lead to long recombination times because photoexcited electrons and holes reside on different layers separated by the van der Waals gap, forming a weakly coupled interlayer exciton polaron. Mid-gap polaronic states also significantly broaden the photoresponse of the films to span across visible and infrared wavelengths. By controlling the amplitude/intensity, duration, and/or number of optical pulses, tunable optoelectronic memory functions, such as short-term and long-term plasticity, are experimentally established in V 2 O 5 -based optoelectronic synapses. Furthermore, device fabrication was extended to mechanically flexible ultrathin glass substrates. Flexible optoelectronic synapses maintained high performance after 150 bending cycles.

Phan, Thanh Luan [National Renewable Energy Labora↗

All 2D Material Printed Diodes and Circuits on Paper for Sustainable Electronics

Sustainable electronics aim to reduce environmental impact by using ecofriendly materials, energy-efficient manufacturing, and recyclable components. However, existing approaches rely on complex, resource-intensive methods, rare metals, or nanomaterials with limited stability as well as plastic substrates, raising sustainability issues. Solution-processed two-dimensional (2D) materials offer a promising alternative: water-based and biocompatible conductive, semiconductive, and insulating 2D material inks can be produced with scalable techniques and are suitable for the fabrication of fully printed devices on low-cost and biodegradable paper substrates. However, 2D material only and fully printed diodes on paper have not yet been reported. Here, we demonstrate fully inkjet-printed 2D material-based diodes on paper using metal-insulator-semiconductor and metal-insulator-metal-semiconductor architectures. Water-based graphene and MoS2 inks, prepared by liquid-phase exfoliation, are used for the metallic and insulating films, while electrochemical exfoliation is used to produce the semiconducting MoS2 ink. The highest forward-to-reverse current ratio obtained is 330 (at ±2 V), while the forward current density is 1 mA/cm2 (at 1 V), making the diode performance comparable to the best solution-processed diodes reported so far. However, in contrast to previous works, fabrication occurs entirely at room temperature and ambient pressure, without using high-pressure sputtering, thermal evaporation, and any precious metal ink. The devices maintain stable performance under bending up to strain of 4% over 10,000 cycles. Finally, the diodes are successfully integrated with other 2D-material based electrical components to realize fully printed RC circuits, differentiators, integrators, and AC-to-DC converters onto paper, hence demonstrating the suitability of our approach for sustainable and disposable integrated circuits.

2D materials↗

2D Semiconductor Nanosheets Supported on Colloidal Quantum Cubes

Two-dimensional (2D) colloidal nanocrystals bridge the physics of epitaxial quantum wells with the synthetic scalability of solution-processed nanomaterials, making them an attractive platform for future LEDs, lasers, and photodetectors. However, their strongly anisotropic 2D morphology complicates the formation of close-packed films required for electrically interfaced devices. Here, we address this limitation by introducing semiconductor quantum cubes (QCs) in which 2D CdSe nanosheets are conformally grown on six faces of CdS cubic scaffolds. This architecture preserves excitonic physics of quasi-2D nanosheets while leveraging the mechanical rigidity and self-assembly of nanocubes, enabling close-packed films with improved electronic coupling and electrical conductivity. By extending CdS/CdSe QCs into a CdS/CdSe/CdS core/shell/shell structure, we realize 2D quantum wells that exhibit unusual multiexciton behavior. In particular, CdS/CdSe/CdS QCs show repulsive exciton–exciton interactions, which decouple CdSe facets into quasi-independent emitters. This leads to the suppressed Auger recombination, long multiexciton lifetimes, and broadband optical gain. The demonstrated combination of unusual multiexciton photophysics and favorable film self-assembly characteristics in QCs presents opportunities for solution-processed optoelectronic devices.

perovskites↗

Stimulated Emission from Below the Bandgap in Giant Quantum Shells

Colloidal semiconductor nanocrystals (NCs) have emerged as promising candidates for developing solution-processable optical gain media, with potential applications in integrated photonic circuits and lasers. However, the deployment of NCs in these technologies has been hindered by nonradiative Auger recombination of multiexciton states, which shortens the optical gain lifetime and reduces its spectral range. Here, we demonstrate that these limitations can be overcome by using giant colloidal quantum shells (g-QSs), comprising a quantum-confined CdSe shell grown over a large (~14 nm) CdS bulk core. Such bulk-nanoscale architecture minimizes exciton–exciton interactions, leading to suppressed Auger recombination and one of the broadest gain bandwidths reported for colloidal nanomaterials, spanning energies both above and, remarkably, below the bandgap. Ultrafast transient absorption and photoluminescence measurements demonstrate that the high-energy portion of optical gain arises from states containing more than 15 excitons per particle while the unusual sub-bandgap gain behaviour results from an Auger-assisted radiative recombination, a mechanism that has traditionally been viewed as a loss pathway. Altogether, these results reveal a unique gain regime associated with bulk-nanocrystal hybrid systems, which offers a promising path toward solution-processable light sources.

Absorption↗

Two Spacers, One Perovskite: Integrating Ruddlesden–Popper and Dion–Jacobson Halide Perovskites

Hybrid organic–inorganic perovskites are a rapidly developing class of materials due to their desirable properties for optoelectronic applications such as their ease of synthesis, solution-processable film formation, tunable band gap, strong photoluminescence, good charge carrier mobilities, and high defect tolerance. Here, we present a novel 2D perovskite motif that seamlessly integrates the structural elements from both Ruddlesden–Popper and Dion–Jacobson halide perovskites. We demonstrate the incorporation of two different organic spacer cations in an ordered manner in 5 novel 2D perovskite iodide materials. Both a cyclic diammonium cation 3-(aminomethyl)piperidinium (3AMP) and a linear alkyl monoammonium cation (Cn = C n H 2n+4 N, n = 4–8) are present in distinct alternating layers, making the new series (Cn) 2 (3AMP)[PbI 4 ] 2 . The crystallization of these materials was optimized through careful temperature control to obtain precise crystal structures via single-crystal X-ray diffraction (XRD) which confirmed the presence of the two cations in distinct layers. The influence of the two spacers on optical properties including the band gaps and photoluminescence spectra are found to more closely resemble (3AMP)PbI 4 than (Cn) 2 PbI 4 , which can be attributed to the amount of distortion imposed by the 3AMP spacer on the lead iodide layers. The findings are supported by density functional theory calculations. The strong photoelectric response of solution-processed thin films shows the potential of these materials in photodetectors or photovoltaics. This unprecedented amalgamation of RP–DJ in (Cn) 2 (3AMP)[PbI 4 ] 2 in a structurally ordered fashion suggests a potential vastly underexplored phase space of 2D perovskites in which there are chemically different spacers in distinct layers of the structure, providing an additional parameter to tune perovskite properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Breaking Barriers in Chalcogenide Perovskite Synthesis: A Generalized Framework for Fabrication of BaMS 3 (M═Ti, Zr, Hf) Materials

Abstract Chalcogenide perovskites have garnered increasing attention as stable, non‐toxic alternatives to lead halide perovskites. However, their conventional synthesis at high temperatures (>1000 °C) has hindered widespread adoption. Recent studies have developed low‐to‐moderate temperature synthesis methods (<600 °C) using reactive precursors, yet a comprehensive understanding of the pivotal factors affecting reproducibility and repeatability remains elusive. This study delineates the critical factors in the low‐temperature synthesis of BaMS 3 (M═Zr, Hf, Ti) compounds and presents a generalized framework. Innovative approaches are developed for synthesizing BaMS 3 compounds using this framework involving organometallics for solution deposition. The molecular precursor routes, employing metal acetylacetonates to generate soluble metal–sulfur bonded complexes and metal–organic compounds to produce soluble metal‐thiolate, metal‐isothiocyanate, and metal‐trithiocarbonate species, are demonstrated to yield carbon‐free BaMS 3 . These methods have achieved the most contiguous films of BaZrS 3 and BaHfS 3 using solution deposition to date. Furthermore, a hybrid solution processing method involving stacking sputter‐deposited Zr and solution‐deposited BaS layers is employed to synthesize a contiguous, oxygen‐free BaZrS 3 film. The diffuse reflectance measurements indicate a direct bandgap of ≈ 1.85 eV for the BaZrS 3 films and ≈ 2.1 eV for the BaHfS 3 film under investigation.

25 ENERGY STORAGE↗

Local halide heterogeneity drives surface wrinkling in mixed-halide wide-bandgap perovskites

Compositional heterogeneity in wide-bandgap (1.8 - 2.1 eV) mixed-halide perovskites is a key bottleneck in the processing of high-quality solution-processed thin films and prevents their application in efficient multijunction solar cells. Notably, mixed-cation (formamidinium-methylammonium) wide-bandgap perovskite films are prone to form micrometer-scale wrinkles which can interfere with the smooth surfaces ideal for multijunction devices. Here, we study the formation dynamics of wrinkled mixed-halide perovskite films and its impact on the local composition and optoelectronic properties. We use in situ X-ray scattering during perovskite film formation to show that crystallization of bromide-rich perovskites precedes that of mixed-halide phases in wrinkled films cast using an antisolvent-based process. Using nanoscopic X­-ray fluorescence and hyperspectral photoluminescence imaging, we also demonstrate the formation of iodide- and bromide-rich phases in the wrinkled domains. This intrinsic spatial halide segregation results in an increased local bandgap variation and Urbach energy. Morphological disorder and compositional heterogeneity also aggravate the formation of sub-bandgap electronic defects, reducing photostability and accelerating light-induced segregation of iodide and bromide ions in thin films and solar cells.

36 MATERIALS SCIENCE↗

Side Chain Engineering of Near-IR Aza-BODIPY Dyes Enables Processable Films with High Hole Mobility in Diodes

Boron chelated azadipyrromethene (Aza-BODIPY) derivatives are promising candidates for near-infrared optoelectronic applications due to their tunable absorption, electron-deficient core, and strong π-conjugation. Here, in this work, we synthesized and studied a series of 1-naphthylethynyl-substituted aza-BODIPY molecules featuring hexyl or hexyloxy solubilizing groups at either the proximal or the distal phenyl positions. These substitutions were designed to improve the solubility, film formation, and optoelectronic properties. We found that solubilizing groups not only enabled uniform solution-processed films but also fine-tuned key properties, such as absorption onset, oxidation potential, and energy levels. Charge transport analysis showed consistently high hole mobilities (∼10 –3 cm 2 /V s) across all substituted derivatives when CuI was used as the hole transport layer, regardless of film morphology. In contrast, electron mobilities tended to be low and inconsistent, partly because of the relatively poor-quality films on the ZnO electron transport layer. Overall, we have shown that solubilizing groups enable film solution-casting and can fine-tune the properties of these near-infrared aza-BODIPY derivatives.

36 MATERIALS SCIENCE↗