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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Current-driven transverse domain wall oscillations in perpendicular spin-valve structures

Spin-transfer-driven oscillations of a transverse domain wall confined to a perpendicular spin-valve structure are investigated using a one-dimensional model. The stack consists of a polarizer, nonmagnetic spacer, soft free layer, and pinned magnetic layer. It is found that the domain-wall oscillation frequency is a nonmonotonic, highly asymmetrical function of applied electric current, showing a strong dependence on the current direction and the relative strengths of the interfacial and bulk spin-transfer torques. Micromagnetic analysis reveals that the surprising and atypical oscillator response is due to an interplay between the interfacial spin-transfer torque, the bulk spin-transfer torque, the exchange torque, and the damping torque. The underlying physical and material responses are examined, including the important role of the domain-wall twist. The competitions between the involved torques under different operating conditions suggest that the oscillator could serve as a model system to investigate magnetic and spintronic phenomena at the nanoscale. Finally, the observed current-dependent twisting of the free-layer magnetization about the axis of precession may further be found interesting for investigations of the interaction between spin-polarized current and chiral spin structures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Ultrafast Control of Interfacial Exchange Coupling in Ferromagnetic Bilayer

Fast spin manipulation in magnetic heterostructures, where magnetic interactions between different materials often define the functionality of devices, is a key issue in the development of ultrafast spintronics. Although recently developed optical approaches such as ultrafast spin-transfer and spin–orbit torques open new pathways to fast spin manipulation, these processes do not fully utilize the unique possibilities offered by interfacial magnetic coupling effects in ferromagnetic multilayer systems. Here, ultrafast optically controlled interfacial exchange interactions in the ferromagnetic Co 2 FeAl/(Ga,Mn)As system at low laser fluence levels are experimentally demonstrated. The excitation efficiency of Co 2 FeAl with the (Ga,Mn)As layer is 30–40 times higher than the case with the GaAs layer at 5 K due to the modification of exchange coupling interaction via photoexcited charge transfer between the two ferromagnetic layers. In addition, the coherent spin precessions persist to room temperature, excluding the drive of pump-modulated magnetization in the (Ga,Mn)As layer and indicating a proximity-effect-related optical excitation mechanism. The results highlight the importance of interfacial exchange interactions in ferromagnetic heterostructures and how these magnetic coupling effects can be utilized for ultrafast, low-power spin manipulation.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Coherent Transfer of Spin Angular Momentum by Evanescent Spin Waves within Antiferromagnetic NiO

Insulating antiferromagnets are efficient and robust conductors of spin current. To realise the full potential of these materials within spintronics, the outstanding challenges are to demonstrate scalability down to nanometric lengthscales and the transmission of coherent spin currents. Here, we report the coherent transfer of spin angular momentum by excitation of evanescent spin waves of GHz frequency within antiferromagnetic NiO at room temperature. Using element-specific and phase-resolved x-ray ferromagnetic resonance, we probe the injection and transmission of ac spin current, and demonstrate that insertion of a few nanometre thick epitaxial NiO(001) layer between a ferromagnet and non-magnet can even enhance the flow of spin current. Our results pave the way towards coherent control of the phase and amplitude of spin currents at the nanoscale, and enable the realization of spin-logic devices and spin current amplifiers that operate at GHz and THz frequencies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Charge Transfer and Spin Dynamics in a Zinc Porphyrin Donor Covalently Linked to One or Two Naphthalenediimide Acceptors

We report quantum coherence effects on charge transfer and spin dynamics in a system having two degenerate electron acceptors are studied using a zinc 5,10,15-tri(n-pentyI)-20-phenylporphyrin (ZnP) electron donor covalently linked to either one or two naphthalene-1,8:4,5-bis(dicarboximide) (NDI) electron acceptors using an anthracene (An) spacer, ZnP-An-NDI (1) and ZnP-An-NDI 2 (2), respectively. Following photoexcitation of 1 and 2 in toluene at 295 K, femtosecond transient absorption spectroscopy shows that the electron transfer (ET) rate constant for 2 is about three times larger than that of 1, which can be accounted for by the statistical nature of incoherent ET as well as the electron couplings for the charge separation reactions. In contrast, the rate constant for charge recombination (CR) of 1 is about 25% faster than that of 2. Using femtosecond transient infrared spectroscopy and theoretical analysis, we find that the electron on NDI 2 ∙- in 2 localizes onto one of the two NDIs prior to CR, thus precluding electronically coherent CR from NDI 2 ∙- . Conversely, CR in both 1 and 2 is spin coherent as indicated by the observation of a resonance in the 3* ZnP yield following CR as a function of applied magnetic field, giving spin-spin exchange interaction energies of 2J = 210 and 236 mT, respectively, where the line width of the resonance for 2 is greater than 1. These data show that while CR is a spin-coherent process, incoherent hopping of the electron between the two NDIs in 2, consistent with the lack of delocalization noted above, results in greater spin decoherence in 2 relative to 1.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Magnetoelectronic phenomena due to quantum magnetization fluctuations

The goal of the project was to identify techniques to study magnetoelectronic phenomena such as spin transfer (ST) that stem from the quantum-mechanical nature of magnetization, and utilize them to characterize these quantum phenomena. The first such technique, electronic measurements based on the dependence of resistance on the population of spin-wave quanta (magnons) in a magnetic nanostructure, was shown by detailed measurements to be significantly influenced by the current-driven generation of a highly nonequilibrium phonon distribution by electrical current. This previously unrecognized phenomenon adds to the understanding of current-induced heating phenomena, qualitatively changes the methodology of analysis of current-induced heating common in scientific studies and engineering of current-carrying nanostructures. It benefits the public by providing a new direction for mitigation of Joule heating effects in electronic devices. The project also included quantum simulations of current-induced effects in magnetic nanostructures, which revealed that linear momentum and energy conservation are important for ST. Only angular momentum conservation was previously believed to be important. This finding is important for the fundamental understanding of ST, and for the design of efficient magnetoelectronic devices taking advantage of these conservation laws. Simulations also showed that non-classical ST is dominant in antiferromagnets, which will transform the understanding of ST in these systems. Finally, experimental studies of spin-transfer in ultrathin transition metal films revealed very large non-classical effects which were traced to the quantum origins of magnetism associated in the studied systems with the formation of an orbital liquid state. These findings i) transform the understanding of "conventional" transition-metal magnetism, ii) open a new field of studies in magnetism and a new method for the electronic control of magnetic properties and magnetism itself, and iii) provide a new approach to the development of efficient magnetoelectronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Eigenvalue-Based Micromagnetic Analysis of Switching in Spin-Torque-Driven Structures

We present an eigenvalue-based approach for studying the magnetization dynamics in magnetic nanostructures driven by spintronic excitations, such as spin-transfer torque and spin-orbit torque. The approach represents the system dynamics in terms of normal oscillation modes (eigenstates) with corresponding complex eigenfrequencies. The dynamics is driven by a small number of active eigenstates and often considering just a single eigenstate is sufficient. We develop a perturbation theory that provides semianalytical dynamic solutions by using eigenstates for the case in the absence of damping and spintronic excitations as a basis. The approach provides useful insights into dynamics in such systems and allows solving several difficulties in their modeling, such as extracting the switching current in magnetic random-access memories and understanding switching mechanisms. We show that the presented approach directly predicts the critical switching current, i.e., switching current for an infinite time. The approach also provides solutions for the switching dynamics allowing the switching current to be obtained for a finite switching time, provided that the system symmetry is broken, e.g., by tilting the polarizer, so that switching by a finite pulse is possible.

42 ENGINEERING↗
DOE OSTI2021

A domain wall-magnetic tunnel junction artificial synapse with notched geometry for accurate and efficient training of deep neural networks

Inspired by the parallelism and efficiency of the brain, several candidates for artificial synapse devices have been developed for neuromorphic computing, yet a nonlinear and asymmetric synaptic response curve precludes their use for backpropagation, the foundation of modern supervised learning. Spintronic devices—which benefit from high endurance, low power consumption, low latency, and CMOS compatibility—are a promising technology for memory, and domain-wall magnetic tunnel junction (DW-MTJ) devices have been shown to implement synaptic functions such as long-term potentiation and spike-timing dependent plasticity. In this work, we propose a notched DW-MTJ synapse as a candidate for supervised learning. Using micromagnetic simulations at room temperature, we show that notched synapses ensure the non-volatility of the synaptic weight and allow for highly linear, symmetric, and reproducible weight updates using either spin transfer torque (STT) or spin–orbit torque (SOT) mechanisms of DW propagation. We use lookup tables constructed from micromagnetics simulations to model the training of neural networks built with DW-MTJ synapses on both the MNIST and Fashion-MNIST image classification tasks. Accounting for thermal noise and realistic process variations, the DW-MTJ devices achieve classification accuracy close to ideal floating-point updates using both STT and SOT devices at room temperature and at 400 K. Our work establishes the basis for a magnetic artificial synapse that can eventually lead to hardware neural networks with fully spintronic matrix operations implementing machine learning.

42 ENGINEERING↗
DOE OSTI2026

Magnus force induced magnetic diode effect in skyrmion systems

We show that skyrmions can exhibit a “magnetic diode effect,” where there is a nonreciprocal response in the transport when the magnetic field is reversed. This effect can be achieved for skyrmions moving in channels with a sawtooth potential on one side and a reversed sawtooth potential on the other side. We consider the cases of both spin-transfer torque (STT) and spin–orbit torque (SOT). When the magnetic field is held fixed, the velocity response of the skyrmion is the same for current applied in either direction for both torques, so there is no current diode effect. When the magnetic field is reversed, under STT driving the velocity of the skyrmion reverses and its absolute value changes. Under SOT driving, the velocity remains in the same direction but drops to a much lower value, resulting in negative differential conductivity. For a fixed current, we find a nonreciprocal skyrmion velocity as a function of the applied field’s sign, in analogy to the velocity–current curves observed in the usual diode effect. The nonreciprocity is generated by the Magnus force, which causes skyrmions to interact preferentially with one side of the channel. Since the channel sides have opposite asymmetry, a positive magnetic field can cause the skyrmion to interact with the “hard” asymmetry side of the channel, while a negative magnetic field causes the skyrmion to interact with the “easy” asymmetry side. This geometry could be used to create new kinds of magnetic-field-induced diode effects that can be harnessed in new types of skyrmion-based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Generalized magnetoelectronic circuit theory and spin relaxation at interfaces in magnetic multilayers

Spin transport at metallic interfaces is an essential ingredient of various spintronic device concepts, such as giant magnetoresistance, spin-transfer torque, and spin pumping. Spin-orbit coupling plays an important role in many such devices. In particular, spin current is partially absorbed at the interface due to spin-orbit coupling. Here, we develop a general magnetoelectronic circuit theory and generalize the concept of spin-mixing conductance, accounting for various mechanisms responsible for spin-flip scattering. For the special case when exchange interactions dominate, we give a simple expression for the spin-mixing conductance in terms of the contributions responsible for spin relaxation (i.e., spin memory loss), spin torque, and spin precession. The spin memory loss parameter d is related to spin-flip transmission and reflection probabilities. There is no straightforward relation between spin torque and spin memory loss. We calculate the spin-flip scattering rates for N|N, F|N, and F|F interfaces using the Landauer-Büttiker method within the linear muffin-tin orbital method and determine the values of d using circuit theory.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Absorption of transverse spin current in ferromagnetic NiCu: Dominance of bulk dephasing over spin-flip scattering

In ferromagnetic metals, transverse spin currents are thought to be absorbed via dephasing—i.e., destructive interference of spins precessing about the strong exchange field. Yet, due to the ultrashort coherence length of ≈1 nm in typical ferromagnetic thin films, it is difficult to distinguish dephasing in the bulk from spin-flip scattering at the interface. Here, to assess which mechanism dominates, we examine transverse spin-current absorption in ferromagnetic NiCu alloy films with reduced exchange fields. We observe that the coherence length increases with decreasing Curie temperature, as weaker dephasing in the film bulk slows down spin absorption. Moreover, nonmagnetic Cu impurities do not diminish the efficiency of spin-transfer torque from the absorbed spin current. Our findings affirm that the transverse spin current is predominantly absorbed by dephasing inside the nanometer-thick ferromagnetic metals, even with high impurity contents.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Heavy-ion-induced displacement damage effects in magnetic tunnel junctions with perpendicular anisotropy

Here, we evaluate the resilience of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy to displacement damage induced by heavy ion irradiation. MTJs were exposed to 3 MeV Ta 2+ ions at different levels of ion beam fluence spanning five orders of magnitude. The devices remained insensitive to beam fluences up to 10 11 ions/cm 2 , beyond which a gradual degradation in the device magnetoresistance, coercive magnetic field, and spin-transfer-torque switching voltage were observed, ending with a complete loss of magnetoresistance at very high levels of displacement damage (>0.035 displacements per atom). The loss of magnetoresistance is attributed to structural damage at the MgO interfaces, which allows electrons to scatter among the propagating modes within the tunnel barrier and reduces the net spin polarization. Ion-induced damage to the interface also reduces the perpendicular magnetic anisotropy. This study clarifies the displacement damage thresholds that lead to significant irreversible changes in the characteristics of spin-transfer-torque magnetic random access memory (STT-MRAM) and elucidates the physical mechanisms underlying the deterioration in device properties.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Electron-mediated entanglement of two distant macroscopic ferromagnets within a nonequilibrium spintronic device

Using the nascent concept of quantum spin-transfer torque, we demonstrate that a current pulse can be harnessed to entangle quantum localized spins of two spatially separated ferromagnets (FMs) which are initially unentangled. The envisaged setup is composed of a spin-polarizer (FM p ) and a spin-analyzer (FM a ) FM layers separated by a normal metal (NM) spacer. The injection of a current pulse into the device leads to a time-dependent superposition of many-body states characterized by a high degree of entanglement between the spin degrees of freedom of the two distant FM layers. The nonequilibrium dynamics are due to the transfer of spin angular momentum from itinerant electrons to the localized spins via a quantum spin-torque mechanism that remains active even for collinear but antiparallel arrangements of the FM p and FM a magnetizations (a situation in which the conventional spin torque is absent). We quantify the mixed-state entanglement generated between the FM layers by tracking the time evolution of the full density matrix and analyzing the build-up of the mutual logarithmic negativity over time. The effect of decoherence and dissipation in the FM layers due to coupling to bosonic baths at finite temperature, the use of multielectron current pulses, and the dependence on the number of spins are also considered in an effort to ascertain the robustness of our predictions under realistic conditions. Lastly, we propose a “current-pump–x-ray-probe” scheme, utilizing ultrafast x-ray spectroscopy, that can witness nonequilibrium and transient entanglement of the FM layers by extracting its time-dependent quantum Fisher information.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Quantum Spin Torque Driven Transmutation of an Antiferromagnetic Mott Insulator

The basic model of spin-transfer torque (STT) in antiferromagnetic spintronics considers the exchange of angular momentum between quantum spins of flowing electrons and noncollinear-to-them localized spins treated as classical vectors. These vectors are assumed to realize Néel order in equilibrium, ↑ ↓ ∙∙∙ ↑ ↓, and their STT-driven dynamics is described by the Landau-Lifshitz-Gilbert (LLG) equation. However, many experimentally employed materials (such as archetypal NiO) are strongly electron-correlated antiferromagnetic Mott insulators (AFMIs) whose localized spins form a ground state quite different from the unentangled Néel state | ↑ ↓ ∙∙∙ ↑ ↓$\rangle$. The true ground state is entangled by quantum spin fluctuations, leading to the expectation value of all localized spins being zero, so that LLG dynamics of classical vectors of fixed length rotating due to STT cannot even be initiated. Instead, a fully quantum treatment of both conduction electrons and localized spins is necessary to capture the exchange of spin angular momentum between them, denoted as quantum STT. We use a recently developed time-dependent density matrix renormalization group approach to quantum STT to predict how injection of a spin-polarized current pulse into a normal metal layer coupled to an AFMI overlayer via exchange interaction and possibly small interlayer hopping—mimicking, e.g., topological-insulator/NiO bilayer employed experimentally—will induce a nonzero expectation value of AFMI localized spins. This new nonequilibrium phase is a spatially inhomogeneous ferromagnet with a zigzag profile of localized spins. The total spin absorbed by AFMI increases with electron-electron repulsion in AFMIs, as well as when the two layers do not exchange any charge.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Progress toward picosecond on-chip magnetic memory

Here, we offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ~3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ~6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.

42 ENGINEERING↗
DOE OSTI2025

Dynamics of metastable contact soliton dissipative exchange flows in one-dimensional ferromagnetic channels

Dissipative exchange flows (DEFs) are large-amplitude boundary value solutions of ferromagnetic channels. In their low-injection limit, DEFs reduce to spin superfluids. However, in the strong injection limit, nonlinearities dominate close to the injection site and a soliton is formed; this solution has been termed a contact soliton dissipative exchange flow (CS-DEF). Here, in this work, we numerically investigate CS-DEF solutions in a moderate injection regime and a finite injection width. We find a solution where two metastable solitons coexist in the injection region. This solution is metastable in the sense that any perturbation to the system will eject one of the solitons out of the injection region. Moreover, soliton dynamics can be excited when two injection regions are separated by a certain distance. We find that the ensuing DEF between the solitons induces a steady-state dynamics in which metastable solitons are continually ejected and nucleated. Furthermore, and depending on the relative signs of the spin injections, the soliton dynamics possess a particular handedness and frequency related to the spin transfer torque delivered by the DEF. Our results provide insights into the transport of spin current by DEFs - where the interaction between DEFs and solitons suggests a mechanism for detaching contact-solitons from the injection boundary. Although this study focuses on the "nonlocal" interaction between solitons, it may lead to the investigation of new mechanisms for inserting solitons in a DEF, e.g., for discrete motion and transport of information over long distances.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

The 2020 Skyrmionics Roadmap

The notion of non-trivial topological winding in condensed matter systems represents a major area of present-day theoretical and experimental research. Magnetic materials offer a versatile platform that is particularly amenable for the exploration of topological spin solitons in real space such as skyrmions. First identified in non-centrosymmetric bulk materials, the rapidly growing zoology of materials systems hosting skyrmions and related topological spin solitons includes bulk compounds, surfaces, thin films, heterostructures, nano-wires and nano-dots. This underscores an exceptional potential for major breakthroughs ranging from fundamental questions to applications as driven by an interdisciplinary exchange of ideas between areas in magnetism which traditionally have been pursued rather independently. The skyrmionics roadmap provides a review of the present state of the art and the wide range of research directions and strategies currently under way. These are, for instance, motivated by the identification of the fundamental structural properties of skyrmions and related textures, processes of nucleation and annihilation in the presence of non-trivial topological winding, an exceptionally efficient coupling to spin currents generating spin transfer torques at tiny current densities, as well as the capability to purpose- design broad-band spin dynamic and logic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Spin–orbit torque switching of a ferromagnet with picosecond electrical pulses

The development of approaches that can efficiently control the magnetization of magnetic materials is central to the creation of fast and low-power spintronic devices. Spin transfer torque can be used to electrically manipulate magnetic order in devices, but is typically limited to nanosecond timescales. Alternatively, spin–orbit torque can be employed, and switching with current pulses down to ~200 ps has been demonstrated. However, the upper limit to magnetization switching speed remains unestablished. Here, we show that photoconductive switches can be used to apply 6-ps-wide electrical pulses and deterministically switch the out-of-plane magnetization of a common thin cobalt film via spin–orbit torque. We probe the ultrafast magnetization dynamics due to spin–orbit torques with sub-picosecond resolution using the time-resolved magneto-optical Kerr effect (MOKE). We also estimate that the magnetization switching consumes less than 50 pJ in micrometre-sized devices.

42 ENGINEERING↗