Results for “stacked substrates” — Page 2

DOE OSTI2022

Relation between interfacial shear and friction force in 2D materials

Understanding the interfacial properties between an atomic layer and its substrate is of key interest at both the fundamental and technological levels. From Fermi level pinning to strain engineering and superlubricity, the interaction between a single atomic layer and its substrate governs electronic, mechanical and chemical properties. Here, we measure the hardly accessible interfacial transverse shear modulus of an atomic layer on a substrate. By performing measurements on bulk graphite, and on epitaxial graphene films on SiC with different stacking orders and twisting, as well as in the presence of intercalated hydrogen, we find that the interfacial transverse shear modulus is critically controlled by the stacking order and the atomic layer–substrate interaction. Importantly, we demonstrate that this modulus is a pivotal measurable property to control and predict sliding friction in supported two-dimensional materials. The experiments demonstrate a reciprocal relationship between friction force per unit contact area and interfacial shear modulus. As a result, the same relationship emerges from simulations with simple friction models, where the atomic layer– substrate interaction controls the shear stiffness and therefore the resulting friction dissipation.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Printing 2D Conjugated Polymer Monolayers and Their Distinct Electronic Properties

Abstract Recently, 2D monolayer films of conjugated polymers have gained increasing attention owing to the preeminence of 2D inorganic films that exhibit unique optoelectronic and mechanical properties compared to their bulk analogs. Despite numerous efforts, crystallization of semiconducting polymers into highly ordered 2D monolayer films still remains challenging. Herein, a dynamic‐template‐assisted meniscus‐guided coating is utilized to fabricate continuous, highly ordered 2D monolayer films of conjugated polymers over a centimeter scale with enhanced backbone π–π stacking. In contrast, monolayer films printed on solid substrates confer upon the 1D fiber networks strong alkyl side‐chain stacking at the expense of backbone packing. From single‐layers to multilayers, the polymer π‐stacks change from edge‐on to bimodal orientation as the film thickness reaches ≈20 nm. Spectroscopic and cyclic voltammetry analysis reveals an abrupt increase in J‐aggregation and absorption coefficient and a decrease in bandgap and highest occupied molecular orbital level until critical thickness, possibly arising from the straightened polymer backbone. This is corroborated by an abrupt increase in hole mobility with film thickness, reaching a maximum of 0.7 cm 2 V −1 s −1 near the critical thickness. Finally, fabrication of chemical sensors incorporating polymer films of various thicknesses is demonstrated, and an ultrahigh sensitivity of the ≈7 nm thick ultrathin film (bilayers) to 1 ppb ammonia is shown.

Kafle, Prapti↗

DOE OSTI2020

PSIP For HDF5 Pilot Project (Final Report)

Productivity and Sustainability Improvement Planning (PSIP) is a lightweight, incremental and iterative approach (much in the same spirit as Agile methodologies) for making routine software process improvements in software projects. It is designed to be easily applied in existing development workflows. Quoting from a November 2019 workshop paper describing PSIP. PSIP breaks from classic software process improvement approaches such as CMM(I), SPICE, ISO 9000 or Six Sigma, in that it trades comprehensive standards and certification-driven assessment for self-defined, internally driven goals. It does, however, carry forward such ideas as having staged models of improvement (like CMM(I)) in the form of progress tracking cards. Additionally, PSIP is more aligned with lean and agile methods; it adopts their emphasis on iterative improvement and continuous learning. At its core, PSIP is an instantiation of the Plan-Do-Check-Act management cycle (PDCA, also known as Plan-Do-Study-Adjust) which provides the foundation for much of the modern software process improvement literature. This situates PSIP within a constellation of bottom-up, inductive software process improvement methods. PSIP is designed around the notion that already overburdened teams can define and carry out a series of small, incremental steps of progression towards improvement goals without significant (there will be some, but the goal is to avoid significant) disruption to ongoing development activities. A key enabling tool in PSIP is the use of Progress Tracking Cards (PTCs) which define the steps of progression towards a given improvement goal. This is the theory of PSIP. The PSIP for HDF5 project was aimed at putting PSIP into practice with the purpose of evaluating its effectiveness in planning and facilitating quality and process improvements in a scientific software project as well as its associated artifacts. The HDF5 project was chosen as a use case to evaluate PSIP for several reasons. First, NNSA labs and LLNL in particular have a keen interest in how HDF5 quality impacts its uptake and sustainability as a community adopted and supported code. Next, HDF5 is a foundational library, a key substrate in the HPC/CSE software stack, and any improvements there realized through this contract will have benefits to many DOE applications depending on it. HDF5 also represents an older, legacy code with technical debts to pay down. These characteristics are similar to many NNSA and even some ECP code projects. But, because HDF5 is an I/O library, it represents a simpler use case within which to study PSIP than a full-fledged and significantly more complex PDE simulation code. We believe these attributes make HDF5 an ideal use case for evaluating PSIP.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2022

Micro-fabricated mirrors with finesse exceeding one million

The Fabry–Perot resonator is one of the most widely used optical devices, enabling scientific and technological breakthroughs in diverse fields including cavity quantum electrodynamics, optical clocks, precision length metrology, and spectroscopy. Though resonator designs vary widely, all high-end applications benefit from mirrors with the lowest loss and highest finesse possible. Fabrication of the highest-finesse mirrors relies on centuries-old mechanical polishing techniques, which offer losses at the parts-per-million (ppm) level. However, no existing fabrication techniques are able to produce high-finesse resonators with the large range of mirror geometries needed for scalable quantum devices and next-generation compact atomic clocks. In this paper, we introduce a scalable approach to fabricate mirrors with ultrahigh finesse ( ≥ <#comment/> 10 6 ) and user-defined radius of curvature spanning of four orders of magnitude ( 10 − <#comment/> 4 − <#comment/> 10 0 m ). We employ photoresist reflow and reactive ion etching to shape and transfer mirror templates onto a substrate while maintaining sub-Angstrom roughness. This substrate is coated with a dielectric stack and used to create arrays of compact Fabry–Perot resonators with finesse values as high as 1.3 million and measured excess loss < <#comment/> 1 p p m . Optical ringdown measurements of 43 devices across five substrates reveal that the fabricated cavity mirrors—with both small and large radii of curvature—produce an average coating-limited finesse of 1.05 million. This versatile approach opens the door to scalable fabrication of high-finesse miniaturized Fabry–Perot cavities needed for emerging quantum optics and frequency metrology technologies.

42 ENGINEERING↗

DOE OSTI2022

Strong Zeeman splitting in orbital-hybridized valleytronic interfaces

We report stacked heterointerfaces of two-dimensional (2D) materials are well-suited to obtain novel electronic functionality at small length scales, because the intrinsic properties of both materials can be blended by interlayer coupling with remarkable effects on the electronic band structure. In particular, band degeneracy at the K and K' Brillouin zone valleys of 2D materials can be broken by symmetry reductions by applying an external magnetic field, with possible application in valleytronic devices. Nevertheless, this usually requires impractically large external magnetic fields > 100 T. An alternative and more practical route is provided via stacking a non-centrosymmetric layered material on a magnetic substrate to induce valley splitting through the magnetic proximity effect; however, the splitting magnitude can vary sharply between similar interfaces. In this work, first-principle calculations are used to calculate the valley splitting of eight low-strain interfaces with transition metal dichalcogenides stacked on 2D magnetic substrates. It is shown that the interlayer band hybridization plays a major role when the two layers’ bands are closely aligned in energy, with the resulting band repulsion and the total valley splitting being strongly dependent on the Hubbard U correction , showing up to an order of magnitude change. The WSe 2 /CrGeTe 3 interface in particular shows strong interlayer interactions, which can potentially lead to a significantly high valley splitting of 26 meV; however further experimental investigations will be needed to resolve uncertainties in the predicted valley splitting.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Brazing methods using porous interlayers and related articles

The disclosure relates to a brazing method for joining substrates, in particular where one of the substrates is difficult to wet with molten braze material. The method includes formation of a porous metal layer on a first substrate to assist wetting of the first substrate with a molten braze metal, which in turn permits joining of the first substrate with a second substrate via a braze metal later in an assembled brazed joint. Ceramic substrates can be particularly difficult to wet with molten braze metals, and the disclosed method can be used to join a ceramic substrate to another substrate. The brazed joint can be incorporated into a solid-oxide fuel cell, for example as a stack component thereof, in particular when the first substrate is a ceramic substrate and the joined substrate is a metallic substrate.

Nicholas, Jason Dale↗

DOE OSTI2023

Brazing methods using porous interlayers and related articles

The disclosure relates to a brazing method for joining substrates, in particular where one of the substrates is difficult to wet with molten braze material. The method includes formation of a porous metal layer on a first substrate to assist wetting of the first substrate with a molten braze metal, which in turn permits joining of the first substrate with a second substrate via a braze metal later in an assembled brazed joint. Ceramic substrates can be particularly difficult to wet with molten braze metals, and the disclosed method can be used to join a ceramic substrate to another substrate. The brazed joint can be incorporated into a solid-oxide fuel cell, for example as a stack component thereof, in particular when the first substrate is a ceramic substrate and the joined substrate is a metallic substrate.

Nicholas, Jason Dale↗

DOE OSTI2022

Multiscale Crystalline Structure of Confined Polypeptoid Films: The Effect of Alkyl Side Chain Branching

Here we report the effect of alkyl side chain branching on melt-recrystallization of nanoconfined polypeptoid films using poly(N-octyl glycine) (PNOG) and poly(N-2-ethyl-1-hexyl glycine) (PNEHG) as model systems. Upon cooling from the isotropic melt, confined PNOG molecules recrystallize into a near-perfect orthorhombic crystal structure with the board-like molecules stacked face-to-face in the substrate-parallel direction, resulting in long-range ordered wormlike lamellae that occupy the entire film. By contrast, rod-like PNEHG molecules bearing branched N-2-ethyl-1-hexyl side chains stack into a columnar hexagonal mesophase with their backbones oriented parallel to the substrates, forming micron-sized sheaf-like superstructures under confinement, exposing large areas of empty spaces in the film. These findings highlight the effect of alkyl side chain branching on the packing motif and multiscale crystalline structure of polypeptoids under a nanoconfined geometry.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Perspective–The Elusive Quantum Anomalous Hall Effect in MnBi 2 Te 4 : Materials

Observation of the quantum anomalous Hall effect (QAHE) in MnBi 2 Te 4 flakes is one of the most exciting results in the study of the intrinsic magnetic topological insulator MnBi 2 Te 4 and related compounds. However, reproducing this fascinating result has been found to be challenging. The quality of starting MnBi 2 Te 4 single crystals is believed to be the key factor. An interesting and important question to address is what is the right quality to enable the QAHE. In this perspective, we present possible approaches to tuning the magnetic and topological properties of MnBi 2 Te 4 by using lattice imperfections, strain, stacking sequence, and interactions between the substrate and flakes/films. It is of critical importance to eventually identify the factor(s) responsible for the realization of QAHE. This paper is part of the JES/JSS Joint Focus Issue In Honor of John Goodenough: A Centenarian Milestone.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Visually undistorted thin film electronic devices

Visually undistorted thin film electronic devices are provided. In one embodiment, a method for producing a thin-film electronic device comprises: opening a scribe in a stack of thin film material layers deposited on a substrate to define an active region and an inactive region of the thin-film electronic device, the stack comprising at least one active semiconductor layer. The active region comprises a non-scribed area of the stack and the inactive region comprises a region of the stack where thin film material was removed by the scribe. The method further comprises depositing at least one scribe fill material into a gap opened by the scribe. The scribe fill material has embedded therein one or more coloring elements that alter an optical characteristics spectrum of the inactive region to obtain an optical characteristics spectrum of the active region within a minimum perceptible difference for an industry defined standard observer.

Hammond, Scott R.↗

DOE OSTI2023

Visually undistorted thin film electronic devices

Visually undistorted thin film electronic devices are provided. In one embodiment, a method for producing a thin-film electronic device comprises: opening a scribe in a stack of thin film material layers deposited on a substrate to define an active region and an inactive region of the thin-film electronic device, the stack comprising at least one active semiconductor layer. The active region comprises a non-scribed area of the stack and the inactive region comprises a region of the stack where thin film material was removed by the scribe. The method further comprises depositing at least one scribe fill material into a gap opened by the scribe. The scribe fill material has embedded therein one or more coloring elements that alter an optical characteristics spectrum of the inactive region to obtain an optical characteristics spectrum of the active region within a minimum perceptible difference for an industry defined standard observer.

Hammond, Scott R.↗

DOE OSTI2024

Visually undistorted thin film electronic devices

Visually undistorted thin film electronic devices are provided. In one embodiment, a method for producing a thin-film electronic device comprises: opening a scribe in a stack of thin film material layers deposited on a substrate to define an active region and an inactive region of the thin-film electronic device, the stack comprising at least one active semiconductor layer. The active region comprises a non-scribed area of the stack and the inactive region comprises a region of the stack where thin film material was removed by the scribe. The method further comprises depositing at least one scribe fill material into a gap opened by the scribe. The scribe fill material has embedded therein one or more coloring elements that alter an optical characteristics spectrum of the inactive region to obtain an optical characteristics spectrum of the active region within a minimum perceptible difference for an industry defined standard observer.

Hammond, Scott R.↗

DOE OSTI2022

Excitation function of 54 Fe(p, α ) 51 Mn from 9.5 MeV to 18 MeV

Excitation function of the 54 Fe(p,α) 51 Mn reaction was measured from 9.5 to 18 MeV $E_{0,p^+}$ by activating a foil stack of 54 Fe electrodeposited on copper substrates. Residual radionuclides were quantified by HPGe gamma ray spectrometry. Both 51 Mn ($t_{1/2}$ = 46.2 min, $\langle E_{β^+}\rangle$=963.7keV, $I_{β^+}$ = 97%; $E_γ$ = 749.1keV, $I_γ$ = 0.265%) and its radioactive daughter, 51 Cr ($t_{1/2}$ = 27.704d, $E_γ$ = 320.1 keV, $I_γ$ = 9.91%), were used to indirectly quantify formation of 51 Mn. Results agree within uncertainty to the only other measurement in literature and predictions of default TALYS theoretical code. Final relative uncertainties are within ±12%.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2020

Tutorial on forming through-silicon vias

Through-silicon vias (TSVs) are a critical technology for three-dimensional integrated circuit technology. These through-substrate interconnects allow electronic devices to be stacked vertically for a broad range of applications and performance improvements such as increased bandwidth, reduced signal delay, improved power management, and smaller form-factors. There are many interdependent processing steps involved in the successful integration of TSVs. This article provides a tutorial style review of the following semiconductor fabrication process steps that are commonly used in forming TSVs: deep etching of silicon to form the via, thin film deposition to provide insulation, barrier, and seed layers, electroplating of copper for the conductive metal, and wafer thinning to reveal the TSVs. Recent work in copper electrochemical deposition is highlighted, analyzing the effect of accelerator and suppressor additives in the electrolyte to enable void-free bottom-up filling from a conformally lined seed metal.

42 ENGINEERING↗

DOE OSTI2020

Atomically Precise PdSe 2 Pentagonal Nanoribbons

We report atomically precise pentagonal PdSe 2 nanoribbons (PNRs) fabricated on a pristine PdSe 2 substrate with a hybrid method of top-down and bottom-up processes. The PNRs form a uniform array of dimer structure with a width of 2.4 nm and length of more than 200 nm. In situ four-probe scanning tunneling microscopy (STM) reveals metallic behavior of PNRs with ballistic transport for at least 20 nm in length. Density functional theory calculations produce a semiconducting density of states of isolated PNRs and find that the band gap narrows and disappears quickly once considering coupling between PNR stacking layers or interaction with the PdSe 2 substrate. The coupling of PNRs is further corroborated by Raman spectroscopy and field-effect transistor measurements. The facile method of fabricating atomically precise PNRs offers an air-stable functional material for dimensional control.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Solar mirrors and methods of making solar mirrors having improved properties

An article for reflecting solar energy includes a coating stack having solar reflecting films and metal oxide films, the coating stack applied on a major surface of a glass substrate, and a protective overcoat comprising a first and a second surface, wherein the first surface of the protective overcoat is disposed toward the solar reflective films and metal oxide films; and a polymer encapsulant over outer wall surfaces of the coating stack, the second surface of the protective overcoat and over peripheral edges of the coated article, the encapsulant having a base layer, a top layer and metallic corrosion-inhibitive material in the base layer.

14 SOLAR ENERGY↗

DOE OSTI2022

Numerical Study of Mineral Nucleation and Growth on a Substrate

We report nucleation and growth processes of minerals and other crystals can significantly affect one another due to the transport limitations and local depletion of reactive ions in the solution. Most numerical models and experimental measurements have typically focused on either growth or nucleation, but not both. In this work, we incorporate a heterogeneous nucleation process based on classical nucleation theory into a microcontinuum model that implements the Darcy–Brinkman–Stokes approach to study the interplay between nucleation and crystal growth on a substrate in diffusive systems. We demonstrate how the Damköhler number (reaction rate) and nucleation rate prefactor change the effective nucleation rate on a substrate. Higher surface growth rates deplete the solute concentration around the nuclei that appear initially on the substrate, creating islands that screen against further nucleation. The model predicts that measured nucleation rates may be affected by the history of crystal nucleation on the substrate. In the extreme case of high growth rates relative to diffusion, it predicts that the rate of subsequent nucleation is limited by reactant depletion. We introduce a nondimensional number α to represent the relation between surface propagation rate during growth and the heterogeneous nucleation rate. We show that it is important to control Damköhler number and α to achieve similar precipitation regimes at different reaction and nucleation rates. We suggest that the observed universality can guide the interpretation of experimental results on nucleation rates, since matching experiment can be achieved by tuning transport, reaction, and nucleation parameters simultaneously. In addition, we show how the bulk solution concentration affects the structure and topology of precipitation on a substrate.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2025

Tomographic assessment of peening for metallurgical bonding in cold spray

It is widely asserted that peening densifies cold spray coatings and improves particle–particle and particle–substrate bonding, yet systematic studies analyzing the evolution of bonding due to peening particle strikes are scarce. We explore peening at the level of individual particle impacts, by creating two-particle Cu-on-Cu stacks using laser-induced particle impact testing. Exploring impact velocities that range from the onset of bonding at the “critical velocity”, V cr , to its peak near 1.4⋅V cr , we perform full 3D tomography of the particle stacks to characterize the bonding state at the particle-substrate interface. Direct labeling of non-bonded patches and the total particle-substrate interface permits quantification and comparison of bonding in single impacts with bonding after subsequent impacts to reveal the origins of the peening effect. The data reveal a surprising finding: although a second impact directly atop the first particle increases the area of the particle-substrate interface (~40% area increase), there is no improvement in metallurgical bonding. Analysis of these data suggest that not only area expansion (and associated oxide rarefication), but also stress-induced extrusion of metal at that interface needs to occur to achieve metal-on-metal contact to see an enhancement in bonding. Furthermore, our analysis suggests that the subsequent impacting particle needs to have ~70% more kinetic energy to produce additional bonding; this implies that particle and velocity distributions within a spray may be helpful, and that peening may rely on unaligned impacts.

Bonding↗