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NASA NTRS1995

Proceedings of the 4th International Conference and Exhibition: World Congress on Superconductivity, Volume 2

This document contains papers presented at the 4th International Conference Exhibition: World Congress on Superconductivity held June 27-July 1, 1994 in Orlando, Florida. These documents encompass research, technology, applications, funding, political, and social aspects of superconductivity. The areas covered included: high-temperature materials; thin films; C-60 based superconductors; persistent magnetic fields and shielding; fabrication methodology; space applications; physical applications; performance characterization; device applications; weak link effects and flux motion; accelerator technology; superconductivity energy; storage; future research and development directions; medical applications; granular superconductors; wire fabrication technology; computer applications; technical and commercial challenges; and power and energy applications.

Krishen, Kumar↗
NASA NTRS1995

Proceedings of the 4th International Conference and Exhibition: World Congress on Superconductivity, volume 1

The papers presented at the 4th International Conference Exhibition: World Congress on Superconductivity held at the Marriott Orlando World Center, Orlando, Florida, are contained in this document and encompass the research, technology, applications, funding, political, and social aspects of superconductivity. Specifically, the areas covered included: high-temperature materials; thin films; C-60 based superconductors; persistent magnetic fields and shielding; fabrication methodology; space applications; physical applications; performance characterization; device applications; weak link effects and flux motion; accelerator technology; superconductivity energy; storage; future research and development directions; medical applications; granular superconductors; wire fabrication technology; computer applications; technical and commercial challenges, and power and energy applications.

Krishen, Kumar↗
NASA NTRS1993

Sandwich-Geometry YBa(2)Cu(3)O(7-delta)/Au/Nb SNS Devices

Superconductor/normal-conductor/superconductor (SNS) devices in which electronically active layers consist of high-temperature superconductor YBa(2)Cu(3)O(7-delta), normal conductor Au, and conventional superconductor Nb, fabricated in sandwich geometry. Devices and processes by which fabricated are part of continuing effort to develop SNS microbridges for use in superconducting quantum interference devices (SQUIDS's) or as mixers or local oscillators operating at frequencies of hundreds of gigahertz. Results show promise for manufacture of practical devices.

Foote, Marc C.↗
NASA NTRS2000

Monolithic integrated high-T.sub.c superconductor-semiconductor structure

A method for the fabrication of active semiconductor and high-temperature superconducting device of the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.

Burns, Michael J.↗
NASA NTRS1990

High temperature superconductor materials and applications

Research on processing methods leading to a significant enhancement in the critical current densities (Jc) and the critical temperature (Tc) of high temperature superconducting in thin bulk and thin film forms. The fabrication of important devices for NASA unique applications (sensors) is investigated.

Doane, George B., III.↗
NASA NTRS2010

Bolometric Device Based on Fluxoid Quantization

The temperature dependence of fluxoid quantization in a superconducting loop. The sensitivity of the device is expected to surpass that of other superconducting- based bolometric devices, such as superconducting transition-edge sensors and superconducting nanowire devices. Just as important, the proposed device has advantages in sample fabrication.

Bonetti, Joseph A.↗
NASA NTRS1991

High temperature superconductive microwave technology for space applications

Progress being made on space application technology research on film fabrication, passive microwave circuits, and semiconductor devices for cryogenic circuits is reviewed. Achievements in YBCO and TCBCO films are addressed along with circuit evaluations of microstrip resonators, phase shifters, microstrip filters, dielectric resonator filters, and superconducting antennas.

Leonard, R. F.↗
NASA NTRS1990

Oxide superconductors under magnetic field

One of the current most serious problems for the oxide superconductors from the standpoint of practical application is the various novel features derived mainly from their extremely short coherence. In particular, the coherence length so far observed in the cuprate superconductors is in the range of 0.1 nm perpendicular to the CuO2 plane. This seems to be creating most of the difficulties in the device fabrication and in the performance under the magnetic field. Some of the superconducting properties under the magnetic field will be discussed in terms of the short coherence length. A model will be presented based on the gradual strengthening of the pinning force with decrease in temperature and the weak coupling at the grain boundaries. Secondly, the broadening of the superconducting transition under the magnetic field is discussed. This is observed significantly only when the field is applied perpendicular to the basal plane and the relative orientation of the current to the field is insignificant in determining the extent of the broadening. Besides, the change in the strength of the pinning force does not affect the width of the broadening. From these observations discussions will be made on a model based on the giant fluctuation. Based on this model, it is predicted that the coherence length along the c-axis will be the single most important material parameter to determine the performance of the superconductor under a strong magnetic field. It seems that BYCO is superior in this regard to Bi- or Tl-systems as far as the performance at 77 K is considered, although another material with the coherence length slightly longer along the c-axis is still highly desired.

Kitazawa, K.↗
NASA NTRS1991

Oxide superconductors under magnetic field

One of the current most serious problems for the oxide superconductors from the standpoint of practical application is the various novel features derived mainly from their extremely short coherence. In particular, the coherence length so far observed in the cuprate superconductors is in the range of 0.1 nm perpendicular to the CuO2 plane. This seems to be creating most of the difficulties in the device fabrication and in the performance under the magnetic field. Some of the superconducting properties under the magnetic field will be discussed in terms of the short coherence length. A model will be presented based on the gradual strengthening of the pinning force with decrease in temperature and the weak coupling at the grain boundaries. Secondly, the broadening of the superconducting transition under the magnetic field is discussed. This is observed significantly only when the field is applied perpendicular to the basal plane and the relative orientation of the current to the field is insignificant in determining the extent of broadening. Besides, the change in the strength of the pinning force does not affect the width of the broadening. From these observations discussions will be made on a model based on the giant fluctuation. Based on this model, it is predicted that the coherence length along the c-axis will be the single most important material parameter to determine the performance of the superconductor under a strong magnetic field. It seems that BYCO is superior in this regard to Bi- or Tl-systems as far as the performance at 77 K is considered, although another material with the coherence length slightly longer along the c-axis is still highly desired.

Kitazawa, K.↗
NASA NTRS1991

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectrics having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writing capability, complex device structures like three terminal hybrid semiconductor/superconductor transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray deffraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

Singh, R.↗
NASA NTRS1981

Superconducting tensor gravity gradiometer

The employment of superconductivity and other material properties at cryogenic temperatures to fabricate sensitive, low-drift, gravity gradiometer is described. The device yields a reduction of noise of four orders of magnitude over room temperature gradiometers, and direct summation and subtraction of signals from accelerometers in varying orientations are possible with superconducting circuitry. Additional circuits permit determination of the linear and angular acceleration vectors independent of the measurement of the gravity gradient tensor. A dewar flask capable of maintaining helium in a liquid state for a year's duration is under development by NASA, and a superconducting tensor gravity gradiometer for the NASA Geodynamics Program is intended for a LEO polar trajectory to measure the harmonic expansion coefficients of the earth's gravity field up to order 300.

Paik, H. J.↗
NASA NTRS1990

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectric having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writting capability, complex device structures like three-terminal hybrid semiconductors/superconductors transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray defraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

Singh, R.↗
NASA NTRS2011

Infrared-Bolometer Arrays with Reflective Backshorts

Integrated circuits that incorporate square arrays of superconducting-transition- edge bolometers with optically reflective backshorts are being developed for use in image sensors in the spectral range from far infrared to millimeter wavelengths. To maximize the optical efficiency (and, thus, sensitivity) of such a sensor at a specific wavelength, resonant optical structures are created by placing the backshorts at a quarter wavelength behind the bolometer plane. The bolometer and backshort arrays are fabricated separately, then integrated to form a single unit denoted a backshort-under-grid (BUG) bolometer array. In a subsequent fabrication step, the BUG bolometer array is connected, by use of single-sided indium bump bonding, to a readout device that comprises mostly a superconducting quantum interference device (SQUID) multiplexer circuit. The resulting sensor unit comprising the BUG bolometer array and the readout device is operated at a temperature below 1 K. The concept of increasing optical efficiency by use of backshorts at a quarter wavelength behind the bolometers is not new. Instead, the novelty of the present development lies mainly in several features of the design of the BUG bolometer array and the fabrication sequence used to implement the design. Prior to joining with the backshort array, the bolometer array comprises, more specifically, a square grid of free-standing molybdenum/gold superconducting-transition-edge bolometer elements on a 1.4- m-thick top layer of silicon that is part of a silicon support frame made from a silicon-on-insulator wafer. The backshort array is fabricated separately as a frame structure that includes support beams and contains a correspond - ing grid of optically reflective patches on a single-crystal silicon substrate. The process used to fabricate the bolometer array includes standard patterning and etching steps that result in the formation of deep notches in the silicon support frame. These notches are designed to interlock with the support beams on the backshort-array structure to provide structural support and precise relative positioning. The backshort-array structure is inserted in the silicon support frame behind the bolometer array, and the notches in the frame serve to receive the support beams of the backshort-array structure and thus determine the distance between the backshort and bolometer planes. The depth of the notches and, thus, the distance between the backshort and bolometer planes, can be tailored to a value between 25 to 300 m adjusting only a few process steps. The backshort array is designed so as not to interfere with the placement of indium bumps for subsequent indium bump-bonding to the multiplexing readout circuitry

Miller, Timothy M.↗
NASA NTRS1989

Preparation of high T(c) Tl-Ba-Ca-Cu-O thin films by pulsed laser evaporation and Tl2O3 vapor processing

Tl-Ba-Ca-Cu-O superconducting thin films with zero-resistance temperatures up to 115 K have been prepared using a Tl2O3 vapor process on Ba-Ca-Cu-O precursor thin films. The Ba-Ca-Cu-O thin films were made by laser deposition on Y-stabilized ZrO2 substrates. This technique minimizes problems caused by the toxicity of Tl2O3, and its subsequent decomposition to the volatile and toxic Tl2O upon heating. Therefore, it may have practical application in the fabrication of high T(c) Tl-Ba-Ca-Cu-O superconducting thin-film devices.

Johs, B.↗
NASA NTRS2012

Fabrication and Performance of Large Format Transition Edge Sensor Microcalorimeter Arrays

We have produced a variety of superconducting transition edge sensor array designs for microcalorimetric detection of x-rays. Designs include kilopixel scale arrays of relatively small sensors (~75 micron pitch) atop a thick metal heatsinking layer as well as arrays of membrane-isolated devices on 250 micron pitch and smaller arrays of devices up to 600 micron pitch. We discuss the fabrication techniques used for each type of array focusing on unique aspects where processes vary to achieve the particular designs and required device parameters. For example, we evaluate various material combinations in the production of the thick metal heatsinking, including superconducting and normal metal adhesion layers. We also evaluate the impact of added heatsinking on the membrane isolated devices as it relates to basic device parameters. Arrays can be characterized with a time division SQUID multiplexer such that greater than 10 devices from an array can be measured in the same cooldown. Device parameters can be measured simultaneously so that environmental events such as thermal drifts or changes in magnetic fields can be controlled. For some designs, we will evaluate the uniformity of parameters impacting the intrinsic performance of the microcalorimeters under bias in these arrays and assess the level of thermal crosstalk.

Chervenak, James A.↗
NASA NTRS1992

Recent progress towards developing a high field, high-T(sub c) superconducting magnet for magnetic suspension and balance systems

This paper reviews superconducting magnets and high T(sub c) superconducting oxide ceramic materials technology to identify areas of fundamental impasse to the fabrication of components and devices that tap what are believed to be the true potential of these new materials. High T(sub c) ceramics pose problems in fundamentally different areas which need to be solved unlike low T(sub c) materials. The authors map out an experimental plan designed to research process technologies which, if suitably implemented, should allow these deficiencies to be solved. Finally, assessments are made of where and on what regimes magnetic system designers should focus their attention to advance the practical development of systems based on these new materials.

Derochemont, L. Pierre↗
NASA NTRS2019

Atomic Layer Deposition Josephson Junctions for Cryogenic Circuit Applications

Superconducting-insulating-superconducting (SIS) trilayers have been produced for Josephson Junction fabrication by thermal atomic layer deposition (ALD) processes. The trilayers are composed of alternating layers of Ti0.4N0.6/Al2O3/ Ti0.4N0.6, deposited at 450°C, in a thermal ALD reactor on Al2O3-coated silicon. The conformal nature of the ALD process provides excellent step coverage of superconducting and insulating films. The film thickness of a single ALD cycle being one mono-layer, allows us to precisely control the tunnel-barrier insulator thickness by counting the number of ALD cycles during the insulator deposition step. Tunnel-junctions with critical current 500 A/cm2 are reported. Fabrication of Josephson Junctions and progress toward development of a single-element ALD Superconducting Quantum Interference Device (SQUID) will be discussed

Atomic Layer Definition↗