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At least 37 records · Page 2

Remotely powered line monitor

Improved devices, apparatuses, systems, and methods involving the use of field probes with voltage-controlled variable impedance elements and surface-launched acoustic wave devices, including surface acoustic wave (SAW) devices and SAW sensor-tag wireless interface devices to measure voltage and current in current carrying conductors (CCCs) via measurement of the electric fields and magnetic fields around said CCCs are disclosed. The devices, apparatuses, systems, and methods taught in the present invention include a remotely powered line-mounted measurement unit that requires no connection to electrical ground for operation, and that has no internal energy source, no energy harvesting or power conditioning circuitry, no discrete energy storage components, and no radio. The devices, apparatuses, systems, and methods taught in the present invention also provide for determining the phase (leading or lagging) of the current relative to the voltage in AC power systems, and also provide for measurement of temperature of the conductor.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Monolithic AlScN/SiC phononic waveguides for scalable acoustoelectric and quantum devices

Unlike conventional surface acoustic wave devices, phononic waveguide systems enable higher circuit density and stronger strain and piezoelectric fields, making them promising for advanced acoustoelectric and quantum applications. One such material system for generating and guiding phonons at gigahertz frequencies is AlScN on SiC, which can be synthesized by sputter depositing AlScN directly onto SiC wafers. The AlScN on the SiC platform allows for tightly vertically-confined acoustic modes with high electromechanical coupling, high speed of sound, and simple fabrication of strip and rib waveguides. Until now, this system has only been studied as a slab waveguide platform, i.e., without any lateral waveguiding. Here, we demonstrate a two-dimensionally confined phononic architecture in AlScN on SiC that supports guided modes at 2.95 and 4.05 GHz. These modes exhibit strong electromechanical coupling coefficients (k 2 = 4.27%) and propagation losses on the order of 10 dB/mm. Furthermore, this architecture is well-suited for phononic routing and power-efficient active or nonlinear devices such as amplifiers, mixers, and oscillators, and is compatible with the integration of quantum systems, including vacancy centers, charge carriers, photons, and spins, either embedded in SiC or heterogeneously integrated on the surface.

Electrical components↗

Spectral interferometry-based microwave-frequency vibrometry for integrated acoustic wave devices

Microwave phononics is a promising platform for sensing, computing, and quantum information science; thus, sensitive and high-throughput characterization tools are needed not only for device verification and optimization but also for revealing transient and nonlinear dynamics. Existing interferometric optical vibrometers for 2D mapping are challenged by operating point stabilization, surface reflectivity contrast, and long acquisition time. Here, we use spectral interferometry, which is insensitive to these factors and utilizes a continuous raster scanning scheme for vibration mapping with high throughput. We intensity-modulate our broadband light source with an electro-optic modulator to resolve vibrations at microwave frequencies. Our system requires no fast photodetector or digitizer operating in the microwave frequency range. We image the 1 GHz vibration field of a 300 × 150 µm 2 area of an entire surface acoustic wave device in 10 min with simultaneous surface profilometry. Our system has a vibration sensitivity of 120 fm/sqrt(Hz) and a linear throughput of 0.77 mm/s on the chip surface. The technique offers capabilities for characterizing a wide range of acoustic wave and micromechanical devices to better understand their behavior and performance.

47 OTHER INSTRUMENTATION↗

A monolithic SAW-charge transfer device

Surface acoustic waves excited in a Si-SiO2-ZnO layered structure can produce a traveling electric field in the silicon substrate. Charges stored in the traveling potential wells can be transferred at high speed and density and with less complexity. The monolithic structure under investigation for the SAW-charge transfer device consists of a silicon substrate, a thin silicon dioxide insulating layer on top of which a ZnO piezoelectric film is deposited by sputtering. The surface acoustic waves are excited by interdigital transducers. The signal charge is injected into traveling potential wells that travel with the velocity of sound. Conditions for the transfer of the charges by the traveling wells are analyzed. A surface acoustic wave program was used to determine the optimum structure dimensions and transducer configuration which will produce the highest coupling in the excitation of the piezoelectric waves.

Papanicolaou, N. A.↗

Temperature and Strain Coefficient of Velocity for Langasite SAW Devices

Surface Acoustic Wave sensors on Langasite substrates are being investigated for aerospace applications. Characterization of the Langasite material properties must be performed before sensors can be installed in research vehicles. The coefficients of velocity for both strain and temperature have been determined. These values have also been used to perform temperature compensation of the strain measurements.

Wilson, W. C.↗

Imaging of surface acoustic waves on GaAs using 2D confocal Raman microscopy and atomic force microscopy

Surface acoustic wave devices have been fabricated on a GaAs (100) substrate to demonstrate the capability of 2D Raman microscopy as an imaging technique for acoustic waves on the surface of a piezoelectric substrate. Surface acoustic waves are generated using a two-port interdigitated transducer platform, which is modified to produce surface standing waves. We have derived an analytical model to relate Raman peak broadening to the near-surface strain field of the GaAs surface produced by the surface acoustic waves. Additionally, atomic force microscopy is used to confirm the presence of a standing acoustic wave, resolving a total vertical displacement of 3 nm at the antinode of the standing wave. Stress calculations are performed for both imaging techniques and are in good agreement, demonstrating the potential of this Raman analysis.

47 OTHER INSTRUMENTATION↗

Frequency coded sensors incorporating tapers

A surface acoustic wave device includes a piezoelectric substrate on which is formed a transducer that generates acoustic waves on the surface of the substrate from electrical waves received by the transducer. The waves are carried along an acoustic track to either a second transducer or a reflector. The transducers or transducer and reflector are formed of subsections that are constructed to operate at mutually different frequencies. The subsections of at least one of the transducers or transducer and reflector are out of alignment with respect to one another relative to the transverse of the propagation direction. The out of aligned subsections provide not only a frequency component but also a time to the signal output signal. Frequency response characteristics are improved. An alternative embodiment provides that the transducers and/or reflectors are continuously tapered instead of having discrete frequency subsections.

Hines, Jacqueline H.↗

Wireless SAW Sensors Having Integrated Antennas

A wireless surface acoustic wave sensor includes a piezoelectric substrate, a surface acoustic wave device formed on the substrate, and an antenna formed on the substrate. In some embodiments, the antenna is formed on the surface of the substrate using one or more of photolithography, thin film processing, thick film processing, plating, and printing.

Gallagher, Mark↗

Coded acoustic wave sensors and system using time diversity

An apparatus and method for distinguishing between sensors that are to be wirelessly detected is provided. An interrogator device uses different, distinct time delays in the sensing signals when interrogating the sensors. The sensors are provided with different distinct pedestal delays. Sensors that have the same pedestal delay as the delay selected by the interrogator are detected by the interrogator whereas other sensors with different pedestal delays are not sensed. Multiple sensors with a given pedestal delay are provided with different codes so as to be distinguished from one another by the interrogator. The interrogator uses a signal that is transmitted to the sensor and returned by the sensor for combination and integration with the reference signal that has been processed by a function. The sensor may be a surface acoustic wave device having a differential impulse response with a power spectral density consisting of lobes. The power spectral density of the differential response is used to determine the value of the sensed parameter or parameters.

Solie, Leland P.↗

Growth of Homoepitaxial ZnO Semiconducting Films

As a high temperature wide-band-gap (3.3 eV at room temperature) semiconductor, ZnO has been used for many applications such as wave-guides, solar cells, and surface acoustic wave devices, Since ZnO has a 60 meV excitonic binding energy that makes it possible to produce excitonic lasing at room temperature, a recent surge of interest is to synthesize ZnO films for UV/blue/green laser diodes. These applications require films with a smooth surface, good crystal quality, and low defect density. Thus, homoepitaxial film growth is the best choice. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystal substrates grown by the hydrothermal method are mechanically polished and annealed in air for four hours before the films are deposited. The annealing temperature-dependence on ZnO substrate morphology and electrical properties is investigated. Films are synthesized by off-axis reactive sputtering deposition. This produces films that have very smooth surfaces with roughness less than or equal to 5 nm on a 5 microns x 5 microns area. The full width at half maximum of film theta rocking curves measured by the x-ray diffraction is slightly larger than that of the crystal substrate. Films are also characterized by measuring resistivity, optical transmittance, and photoluminescence. The properties of ZnO films grown on (0001) ZnO and (0001) sapphire substrates will also be compared and discussed.

Zhu, Shen↗

Growth of Homoepitaxial ZnO Semiconducting Films

As a high temperature semiconductor, ZnO has been used for many applications such as wave-guide, solar cells, and surface acoustic wave devices. Since the ZnO material has an energy gap of 3.3 eV at room temperature and an excitonic binding energy (60 meV) that is possible to make excitonic lasering at room temperature a recent surge of interest is to synthesize ZnO films for electro-optical devices. These applications require films with a smooth surface, good crystal quality, and low defect density. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystals are grown by the hydrothermal method. Substrates are mechanically polished and annealed in air for four hours before deposited films. The annealing temperature-dependence of ZnO substrates is studied. Films are synthesized by the off-axis reactive sputtering deposition. The films have very smooth surface with a roughness </= 5 nm on a 5 micrometers x 5 micrometers area. The full width at half maximum of film theta rocking curves measured by the x-ray diffraction is slightly larger than the crystal substrate. The film quality is determined by measuring the film resistivity, the Hall mobility, carrier densities and the energy band gap. The properties of ZnO films grown of (0001) ZnO and (0001) sapphire substrates will be also compared and discussed in the presentation.

Zhu, Shen↗

Study for identification of Beneficial Uses of Space (BUS), phase 2. Volume 2: Technical report. Book 2: Section 5, appendices A through D

An investigation of the technology and programmatics involved in the development of four of the products selected as capable of benefitting from space manufacturing was conducted. The four activities selected are as follows: (1) levitation heating and melting of tungsten, (2) free suspension processing of oxides to form amorphous oxide materials, (3) crystals for surface wave acoustic substrates, and (4) space manufacturing of surface acoustic wave devices.

Source record↗

Methods utilized in evaluating the profitability of commercial space processing

Profitability analysis is applied to commercial space processing on the basis of business concept definition and assessment and the relationship between ground and space functions. Throughput analysis is demonstrated by analysis of the space manufacturing of surface acoustic wave devices. The paper describes a financial analysis model for space processing and provides key profitability measures for space processed isoenzymes.

Bloom, H. L.↗

Gas sensor and method of optimizing an array of gas sensors

A gas sensor (100,200) includes at least one sensor device including a surface acoustic wave (SAW) device (110) or a quartz crystal microbalance (QCM) device (210), and a layer of metal organic framework (MOF) material (120,220) disposed on each of the at least one sensor device. The at least one sensor device is structured to sense a change in mass of the MOF material.

Wilmer, Christopher E.↗

Surface acoustic wave oxygen sensor

A surface acoustic wave (SAW) device that responds to oxygen pressure was developed by coating a 158 MHz quartz surface acoustic wave (SAW) device with an oxygen binding agent. Two types of coatings were used. One type was prepared by dissolving an oxygen binding agent in a toluene solution of a copolymer containing the axial ligand. A second type was prepared with an oxygen binding porphyrin solution containing excess axial ligand without a polymer matrix. In the polymer based coatings, the copolymer served to provide the axial ligand to the oxygen binding agent and as a coating matrix on the surface of the SAW device. The oxygen sensing SAW device has been shown to bind oxygen following a Langmuir isotherm and may be used to measure the equilibrium constant of the oxygen binding compound in the coating matrix.

Collman, James P.↗

Surface acoustic wave coding for orthogonal frequency coded devices

Methods and systems for coding SAW OFC devices to mitigate code collisions in a wireless multi-tag system. Each device producing plural stepped frequencies as an OFC signal with a chip offset delay to increase code diversity. A method for assigning a different OCF to each device includes using a matrix based on the number of OFCs needed and the number chips per code, populating each matrix cell with OFC chip, and assigning the codes from the matrix to the devices. The asynchronous passive multi-tag system includes plural surface acoustic wave devices each producing a different OFC signal having the same number of chips and including a chip offset time delay, an algorithm for assigning OFCs to each device, and a transceiver to transmit an interrogation signal and receive OFC signals in response with minimal code collisions during transmission.

Malocha, Donald↗

Modulating surface acoustic wave generation through superconductivity

Surface acoustic waves (SAWs), with their five orders-of-magnitude slower propagation velocity, allow for considerably shorter wavelengths at the same frequency compared to electromagnetic waves. The short wavelengths allow for device miniaturization and on-chip integration. The generic design of these devices involves piezoelectric substrates with comb-like arrays of Al or Au electrodes known as interdigitated transducers (IDTs) deposited on the surface. However, Al and Au both have shortcomings at the cryogenic temperatures required for quantum applications, namely, the formation of two-level systems and the lack of superconductivity perpetuating Ohmic losses, respectively. In this work, SAWs are generated in the high-MHz to low-GHz range using niobium nitride (NbN) interdigitated transducers and Bragg reflectors. We demonstrate the fabrication of acoustic devices through photolithography and reactive ion etching. The sharp transition between superconducting and normal states and the corresponding change in SAW transmission allows for fine control of the “on” (superconducting) and “off” (normal) states of NbN, with a ΔT = 1 K separating the transmission minimum and maximum. We demonstrate a 16× difference in transmission between the “on” and “off” states of the device. The SAW transmission behavior mirrors the change in resistance of NbN at its T c . These findings open up new possibilities for the integration of NbN SAW resonators into existing quantum architectures based on NbN and a method for adjusting transmission properties independent of applied voltage.

36 MATERIALS SCIENCE↗