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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

Device and Method for Gathering Ensemble Data Sets

An ensemble detector uses calibrated noise references to produce ensemble sets of data from which properties of non-stationary processes may be extracted. The ensemble detector comprising: a receiver; a switching device coupled to the receiver, the switching device configured to selectively connect each of a plurality of reference noise signals to the receiver; and a gain modulation circuit coupled to the receiver and configured to vary a gain of the receiver based on a forcing signal; whereby the switching device selectively connects each of the plurality of reference noise signals to the receiver to produce an output signal derived from the plurality of reference noise signals and the forcing signal.

Racette, Paul E.↗
NASA NTRS2011

Reconfigurable Microwave Phase Delay Element for Frequency Reference and Phase-Shifter Applications

A technique was developed to provide a reconfigurable high-precision micro - wave electrical phase delay for resonators and phase shifters. The invention employs multiple branches of transmission lines with open-ended or ground-ended terminations as configurable bits or digits. This technique minimizes the errors due to limited precision of switching devices. In addition, the proposed linear analytical approach significantly produces a much simpler design than that of other prior inventions at the time of this reporting. Microwave components such as filters, phase delay elements, or resonators require a method that can accurately adjust their frequency responses. Most tuning techniques offer very wide frequency tuning range; however, it is often difficult and expensive to tune their response in a very narrow operating frequency, especially when the tuning element reaches its minimum discrete step due to fabrication tolerances. The problem becomes worse as the operating frequency is in mm-wave frequency range (>26 GHz). The electrical tuning sensitivity of a microwave line is dependent on the position of the tuning element with respect to the reference termination. By placing this tuning element away from this reference with the main transmission line connecting the two elements together the sensitivity of the tuning element can change significantly. This concept can be used in the system that requires multiple tuning sensitivities. In this case, multiple tuning branches are superimposed in the main transmission line. The proposed invention allows the transmission-line electrical length to be accurately programmed using switching elements that have limited accuracy. The invention consists of multiple branches of transmission lines connected to discrete switching devices with open-ended terminations. They are used as discrete tuning elements. These elements are connected to the main microwave transmission line and are separated by a well-defined electrical degree spacing. Each branch is programmed to have different electrical degree sensitivity, such as a combination of discrete steps in each branch, which results in a reflective line with a unique effective phase response. To reduce the number of switching devices, it is desirable to program the devices in binary configuration where each branch represents one bit in the base-2 number system. This invention allows the transmission line electrical length to be tuned precisely with customizable sensitivity based on the known sensitivity of the base tuning circuit. The tuning resolution is dependent on the distance among tuning branches.

Hsieh, Wen-Ting↗
NASA NTRS1987

High-Voltage Switch Containing (DI)2 Devices

Series switching diodes triggered on by passing above threshold voltage. High-voltage switch made by connecting multitude of deep-impurity, double-injection devices in series with each other and with another, triggerable high-voltage device such as thyristor. Device operates near ground potential to avoid insulation problems in triggering circuit.

Hanes, Maurice H.↗
NASA NTRS2008

A Novel Nanoionics-Based Switch for Microwave Applications

This paper reports the development and characterization of a novel switching device for use in microwave systems. The device utilizes a switching mechanism based on nanoionics, in which mobile ions within a solid electrolyte undergo an electrochemical process to form and remove a conductive metallic "bridge" to define the change of state. The nanoionics-based switch has demonstrated an insertion loss of approx.0.5dB, isolation of >30dB, low voltage operation (1V), low power (approx. micro-W) and low energy (approx. nJ) consumption, and excellent linearity up to 6 GHz. The switch requires fewer bias operations (due to non-volatile nature) and has a simple planar geometry allowing for novel device structures and easy integration into microwave power distribution circuits.

Nessel, James A.↗
NASA NTRS2002

Electronics for Deep Space Cryogenic Applications

Deep space probes and planetary exploration missions require electrical power management and control systems that are capable of efficient and reliable operation in very cold temperature environments. Typically, in deep space probes, heating elements are used to keep the spacecraft electronics near room temperature. The utilization of power electronics designed for and operated at low temperature will contribute to increasing efficiency and improving reliability of space power systems. At NASA Glenn Research Center, commercial-off-the-shelf devices as well as developed components are being investigated for potential use at low temperatures. These devices include semiconductor switching devices, magnetics, and capacitors. Integrated circuits such as digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being evaluated. In this paper, results will be presented for selected analog-to-digital converters, oscillators, DC/DC converters, and pulse width modulation (PWM) controllers.

Patterson, R. L.↗
NASA NTRS1974

Photomultiplier circuit including means for rapidly reducing the sensitivity thereof

A simple, reliable and inexpensive control circuit is described for rapidly reducing the bias voltage across one or more of the dynode stages of a photomultiplier, to substantially decrease its sensitivity to incoming light at those times where excess light intensity might damage the tube. The control circuit comprises a switching device, such as a silicon controlled rectifier (SCR), coupled between a pair of the electrodes in the tube, preferably the cathode and first dynode, or the first and second dynodes, the switching device operating in response to a trigger pulse applied to its gate to short circuit the two electrodes. To insure the desired reduction in sensitivity, two switching stages, the devices be employed between two of the electrode stages, the devices being operated simultaneously to short circuit both stages.

Mcclenahan, J. O.↗
NASA NTRS1985

Remote Power Controllers For High-Power dc Switching

Circuits combine functions of remotely controlled switch and circuit breaker. Circuits developed at different power levels but conceptually very similar. Selection of appropriate switching devices and minor modifications, circuits used to build RPC's covering range of voltage and power levels limited only by switching devices chosen. RPC's using GTO's have power capability ranging from 7.8 to 52 kW, while those using MOSFET's range from 8 to 15 kW. Applications include satellite, Space Station, commerical aircraft, naval vessels, and numerous industrial areas.

Sturman, J. C.↗
NASA NTRS1975

Two dimensional thermal and charge mapping of power thyristors

The two dimensional static and dynamic current density distributions within the junction of semiconductor power switching devices and in particular the thyristors were obtained. A method for mapping the thermal profile of the device junctions with fine resolution using an infrared beam and measuring the attenuation through the device as a function of temperature were developed. The results obtained are useful in the design and quality control of high power semiconductor switching devices.

Hu, S. P.↗
NASA NTRS1985

High-voltage, high-power, solid-state remote power controllers for aerospace applications

Two general types of remote power controller (RPC) that combine the functions of a circuit breaker and a switch were developed for use in direct-current (dc) aerospace systems. Power-switching devices used in these designs are the relatively new gate-turnoff thyristor (GTO) and poweer metal-oxide-semiconductor field-effect transistors (MOSFET). The various RPC's can switch dc voltages to 1200 V and currents to 100 A. Seven different units were constructed and subjected to comprehensive laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times to limit voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout and microsecond tripout for large overloads. The basic circuits developed can be used to build switchgear limited only by the ratings of the switching device used.

Sturman, J. C.↗
NASA NTRS1999

Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

Commercial epilayers are known to contain a variety of crystallographic imperfections. including micropipes, closed core screw dislocations. low-angle boundaries, basal plane dislocations, heteropolytypic inclusions, and non-ideal surface features like step bunching and pits. This paper reviews the limited present understanding of the operational impact of various crystal defects on SiC electrical devices. Aside from micropipes and triangular inclusions whose densities have been shrinking towards manageably small values in recent years, many of these defects appear to have little adverse operational and/or yield impact on SiC-based sensors, high-frequency RF, and signal conditioning electronics. However high-power switching devices used in power management and distribution circuits have historically (in silicon experience) demanded the highest material quality for prolonged safe operation, and are thus more susceptible to operational reliability problems that arise from electrical property nonuniformities likely to occur at extended crystal defects. A particular emphasis is placed on the impact of closed-core screw dislocations on high-power switching devices, because these difficult to observe defects are present in densities of thousands per cm,in commercial SiC epilayers. and their reduction to acceptable levels seems the most problematic at the present time.

Neudeck, Philip G.↗
NASA NTRS1975

Automated parking garage system model

A one-twenty-fifth scale model of the key components of an automated parking garage system is described. The design of the model required transferring a vehicle from an entry level, vertically (+Z, -Z), to a storage location at any one of four storage positions (+X, -X, +Y, +Y, -Y) on the storage levels. There are three primary subsystems: (1) a screw jack to provide the vertical motion of the elevator, (2) a cam-driven track-switching device to provide X to Y motion, and (3) a transfer cart to provide horizontal travel and a small amount to vertical motion for transfer to the storage location. Motive power is provided by dc permanent magnet gear motors, one each for the elevator and track switching device and two for the transfer cart drive system (one driving the cart horizontally and the other providing the vertical transfer). The control system, through the use of a microprocessor, provides complete automation through a feedback system which utilizes sensing devices.

Collins, E. R., Jr.↗
NASA NTRS2015

Proof-of-Concept Experiments on a Gallium-Based Ignitron for Pulsed Power Applications

Ignitrons are electrical switching devices that operate at switching times that are on the order of microseconds, can conduct high currents of thousands of amps, and are capable of holding off tens of thousands of volts between pulses. They consist of a liquid metal pool within an evacuated tube that serves both the cathode and the source of atoms and electrons for an arc discharge. Facing the liquid metal pool is an anode suspended above the cathode, with a smaller ignitor electrode tip located just above the surface of the cathode. The ignitron can be charged to significant voltages, with a potential difference of thousands of volts between anode and cathode. When an ignition pulse is delivered from the ignitor electrode to the cathode, a small amount of the liquid metal is vaporized and subsequently ionized, with the high voltage between the anode and cathode causing the gas to bridge the gap between the two electrodes. The electrons and ions move rapidly towards the anode and cathode, respectively, with the ions liberating still more atoms from the liquid metal cathode surface as a high-current plasma arc discharge is rapidly established. This arc continues in a self-sustaining fashion until the potential difference between the anode and cathode drops below some critical value. Ignitrons have been used in a variety of pulsed power applications, including the railroad industry, industrial chemical processing, and high-power arc welding. In addition, they might prove useful in terrestrial power grid applications, serving as high-current fault switches, quickly shunting dangerous high-current or high-voltage spikes safely to ground. The motivation for this work stemmed from the fact that high-power, high-reliability, pulsed power devices like the ignitron have been used for ground testing in-space pulsed electric thruster technologies, and the continued use of ignitrons could prove advantageous to the future development and testing of such thrusters. Previous ignitron designs have used mercury as the liquid metal cathode, owing to its presence as a liquid at room temperatures and a vapor pressure of 10 Pa (75 mtorr) at room temperature. While these are favorable properties, there are obvious environmental and personal safety concerns with the storage, handling, and use of mercury and its compounds. The purpose of the present work was to fabricate and test an ignitron that used as its cathode an alternate liquid metal that was safe to handle and store. To that end, an ignitron test article that used liquid gallium as the cathode material was developed and tested. Gallium is a metal that has a melting temperature of 29.76 C, which is slightly above room temperature, and a boiling point of over 2,300 C at atmospheric pressure. This property makes gallium the element with the largest relative difference between melting and boiling points. Gallium has a limited role in biology, and when ingested, it will be subsequently processed by the body and expelled rather than accumulating to toxic levels. The next section of this Technical Memorandum (TM) provides background information on the development of mercury-based ignitrons, which serves as the starting point for the development of the gallium-based variant. Afterwards, the experimental hardware and setup used in proof-of-concept testing of a basic gallium ignitron are presented. Experimental data, consisting of discharge voltage and current waveforms as well as high-speed imaging of the gallium arc discharge in the gallium ignitron test article, are presented to demonstrate the efficacy of the concept. Discussion of the data and suggestions on improvements for future iterations of the design are presented in the final two sections of this TM.

Ali, H. K.↗
NASA NTRS1994

Design of power electronics for TVC and EMA systems

The EMA systems proposed for future space transportation applications are high power systems operating at voltages up to 270 Vdc and at current levels on the order of hundreds of amperes. The position of the actuator is controlled by modulating the flow of energy from the source to an electric motor with an inverter. Hard-switching of the semiconductor devices in the inverter results in considerable device switching stresses and losses and in the generation of substantial amounts of EMI. Both of these can be reduced by employing zero-voltage-switching (ZVS) techniques in the inverter. This project has focused on the development of a ZVS inverter for the Marshall Space Center EMA prototypes, which utilize brushless dc motors to convert electrical energy to mechanical energy. An inverter which permitted zero-voltage switching and a quasi-PWM operation was selected for study and implementation. A waveshaping circuit is added to the front of a standard three-phase inverter to achieve the desired switching properties. This circuit causes the input voltage of the three-phase inverter to ring to zero where it is clamped for a short period of time. During this zero-voltage period, any of the semiconductor switches in the three-phase inverter are switched on or off at zero voltage resulting in a reduction in switching losses and EMI. The operation of this waveshaping circuit and its interaction with the three-phase inverter are described. The different circuit modes were analyzed using equivalent circuits. Based on this analysis, design relationships were developed for calculating component values for the circuit elements in the waveshaping circuit. Waveforms of various voltages and currents in the waveshaping circuit were plotted and used to determine the ratings of the semiconductors in the waveshaping circuit. The implementation of this inverter are described. Block diagrams for the overall control system and the waveshaping circuit control are presented and discussed. The current control scheme employed in the controller is also described.

Nelms, R. Mark↗
NASA NTRS1997

Crystalline Colloidal Arrays in Polymer Matrices

Crystalline Colloidal Arrays (CCA, also known as colloidal crystals), composed of aqueous or nonaqueous dispersions of self-assembled nanosized polymer colloidal spheres, are emerging toward the development of advanced optical devices for technological applications. The spontaneous self assembly of polymer spheres in a dielectric medium results from the electrostatic repulsive interaction between particles of uniform size and charge distribution. In a way similar to atomic crystals that diffract X-rays, CCA dispersions in thin quartz cells selectively and efficiently Bragg diffract the incident visible light. The reason for this diffraction is because the lattice (body or face centered cubic) spacing is on the order of the wavelength of visible light. Unlike the atomic crystals that diffract a fixed wavelength, colloidal crystals in principle, depending on the particle size, particle number and charge density, can diffract W, Vis or IR light. Therefore, the CCA dispersions can be used as laser filters. Besides, the diffraction intensity depends on the refractive index mismatch between polymer spheres and dielectric medium; therefore, it is possible to modulate incident light intensities by manipulating the index of either the spheres or the medium. Our interest in CCA is in the fabrication of all-optical devices such as optical switches, limiters, and spatial light modulators for optical signal processing. The two major requirements from a materials standpoint are the incorporation of suitable nonlinear optical materials (NLO) into polymer spheres which will allow us to alter the refractive index of the spheres by intense laser radiation, and preparation of solid CCA filters which can resist laser damage. The fabrication of solid composite filters not only has the advantage that the films are easier to handle, but also the arrays in solid films are more robust than in liquid media. In this paper, we report the photopolymerization process used to trap CCA in polymer matrices, the factors which affect the optical diffraction qualities of resulting polymer films, and methods to improve the efficiencies of solid optical filters. Before this, we also present the experimental demonstration, of controlling the optical diffraction intensities from aqueous CCA dispersions by varying the temperature, which establishes the feasibility of fabricating all-optical switching devices with nonlinear periodic array structures.

Sunkara, Hari B.↗
NASA NTRS1999

Gate drive latching circuit for an auxiliary resonant commutation circuit

A gate drive latching circuit for an auxiliary resonant commutation circuit for a power switching inverter includes a current monitor circuit providing a current signal to a pair of analog comparators to implement latching of one of a pair of auxiliary switching devices which are used to provide commutation current for commutating switching inverters in the circuit. Each of the pair of comparators feeds a latching circuit which responds to an active one of the comparators for latching the associated gate drive circuit for one of the pair of auxiliary commutating switches. An initial firing signal is applied to each of the commutating switches to gate each into conduction and the resulting current is monitored to determine current direction and therefore the one of the switches which is carrying current. The comparator provides a latching signal to the one of the auxiliary power switches which is actually conducting current and latches that particular power switch into an on state for the duration of current through the device. The latching circuit is so designed that the only time one of the auxiliary switching devices can be latched on is during the duration of an initial firing command signal.

Delgado, Eladio Clemente↗
NASA NTRS2014

5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of μs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high‐power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre‐ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn‐off Thyristors (GTOs) and Silicon‐Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast‐switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn‐off), and lower‐magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).

Toftul, Alexandra↗