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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Optical properties of ion beam textured metals

Copper, silicon, aluminum, titanium and 316 stainless steel were textured by 1000 eV xenon ions from an 8-cm diameter electron bombardment ion source. Copper, silicon, and aluminum developed a cone structure with an average peak-to-peak distance ranging from 1 micron for silicon to 6 microns for aluminum. Titanium and 316 stainless steel developed a serpentine ridge structure. The average peak-to-peak distance for both of these materials was 0.5 micron. Total reflectance for air mass 0 and 2, solar absorptance, and total emittance, normalized for a 425 K black body were calculated from the reflectance measurements. All materials had solar absorptances between 0.93 (stainless steel) and 0.97 (silicon and aluminum). Total emittance values of 0.75, 0.80, and 0.85 for Si, Al, and Cu, respectively, resulted in a solar absorptance/total emittance ratio of approximately 1.2. Titanium and 316 stainless steel had values of 2.6 and 2.9, respectively, for this ratio.

Hudson, W. R.↗
DOE OSTI2023

Orientation-dependent etching of silicon by fluorine molecules: A quantum chemistry computational study

Anisotropic etching is a widely used process in semiconductor manufacturing, in particular, for micro- and nanoscale texturing of silicon surfaces for black silicon production. The typical process of plasma-assisted etching uses energetic ions to remove materials in the vertical direction, creating anisotropic etch profiles. Plasmaless anisotropic etching, considered here, is a less common process that does not use ions and plasma. The anisotropy is caused by the unequal etching rates of different crystal planes; the etching process, thus, proceeds in a preferred direction. In this paper, we have performed quantum chemistry modeling of gas-surface reactions involved in the etching of silicon surfaces by molecular fluorine. The results confirm that orientation-dependent etch rates are the reason for anisotropy. The modeling of F 2 dissociative chemisorption on F-terminated silicon surfaces shows that Si–Si bond breaking is slow for the Si(111) surface, while it is fast for Si(100) and Si(110) surfaces. Both Si(100) and Si(110) surfaces incorporate a larger number of fluorine atoms resulting in Si–Si bonds having a larger amount of positive charge, which lowers the reaction barrier of F 2 dissociative chemisorption, yielding a higher etch rate for Si(100) and Si(110) surfaces compared to Si(111) surfaces. Molecular dynamics modeling of the same reactions has shown that the chosen reactive bond order potential does not accurately reproduce the lower reaction barriers for F 2 dissociative chemisorption on Si(100) and Si(100) surfaces. Furthermore, reparameterization is necessary to model the anisotropic etching process that occurs at lower temperatures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1977

Adaptation of ion beam technology to microfabrication of solid state devices and transducers

It was found that ion beam texturing of silicon surfaces can be used to increase the effective surface area of MOS capacitors. There is, however, a problem with low dielectric breakdown. Preliminary work was begun on the fabrication of ion implanted resistors on textured surfaces and the potential improvement of wire bond strength by bonding to a textured surface. In the area of ion beam sputtering, the techniques for sputtering PVC were developed. A PVC target containing valinomycin was used to sputter an ion selective membrane on a field effect transistor to form a potassium ion sensor.

Topich, J. A.↗
DOE OSTI2020

Nonuniform Charge Collection in SiOx-Based Passivated-Contact Silicon Solar Cells

In this contribution, we report on the charge-collection characteristics of silicon photovoltaic devices using passivated contacts based on the c-Si/SiO x /poly-Si structure. Using electron-beam induced current (EBIC) imaging in plan-view and cross-section orientations, we find that charge collection in a device with a 1.5-nm-thick SiO x layer is fairly uniform in the p-n junction region and does not appear to be influenced by pyramidal surface texture. In contrast, a device with a 2.2-nm-thick oxide layer shows significant spatial variation in the charge-collection signal. The apexes of the pyramids exhibit reduced EBIC signal whereas the valleys between adjacent pyramids show the strongest collection. Our results indicate that charge collection in c-Si/SiO x /poly-Si structures can be influenced by both the properties of the SiO x layer and surface texture.

14 SOLAR ENERGY↗
NASA NTRS1978

Industrial ion source technology

An analytical model was developed to describe the development of a coned surface texture with ion bombardment and simultaneous deposition of an impurity. A mathematical model of sputter deposition rate from a beveled target was developed in conjuction with the texturing models to provide an important input to that model. The establishment of a general procedure that will allow the treatment of manay different sputtering configurations is outlined. Calculation of cross sections for energetic binary collisions was extened to Ar, Kr.. and Xe with total cross sections for viscosity and diffusion calculated for the interaction energy range from leV to 1000eV. Physical sputtering and reactive ion etching experiments provided experimental data on the operating limits of a broad beam ion source using CF4 as a working gas to produce reactive species in a sputtering beam. Magnetic clustering effects are observed when Al is seeded with Fe and sputtered with Ar(?) ions. Silicon was textured at a micron scale by using a substrate temperature of 600 C.

Kaufman, H. R.↗
DOE OSTI2022

Defect engineering in wide-bandgap perovskites for efficient perovskite–silicon tandem solar cells

Wide-bandgap (WBG) mixed-halide perovskites show promise of realizing efficient tandem solar cells but at present suffer from large open-circuit voltage loss and the mechanism is still unclear. Here we show that WBG perovskites with iodide–bromide compositions have an increased concentration of deep traps induced by iodide interstitials, which limits performance of WBG perovskite cells. We employ tribromide ions to suppress the iodide interstitial formation and thus reduce charge recombination in bladed WBG perovskite films of Cs 0.1 FA 0.2 MA 0.7 Pb(I 0.85 Br 0.15 )3. The 1-µm-thick opaque WBG perovskite solar cells have an efficiency of 21.9%, a small open-circuit voltage deficit of 0.40 V and a large fill factor of 83%. The efficiency of the best-performing monolithic perovskite–silicon tandem cell using this perovskite reaches 28.6%. Furthermore, the tribromide addition also suppresses light-induced phase segregation in WBG perovskites and thus enhance device stability. Encapsulated tandem cells maintain 93% of their initial efficiency after operation for 550 h.

14 SOLAR ENERGY↗
NASA NTRS1984

Excimer laser annealing to fabricate low cost solar cells

The objective is to show whether or not pulsed excimer laser annealing (PELA) of ion-implanted junctions is a cost effective replacement for diffused junctions in fabricating crystalline silicon solar cells. The preliminary economic analysis completed shows that the use of PELA to fabricate both the front junction and back surface field (BSF) would cost approximately 35 cents per peak watt (Wp), compared to a cost of 15 cents/Wp for diffusion, aluminum BSF and an extra cleaning step in the baseline process. The cost advantage of the PELA process depends on improving the average cell efficiency from 14% to 16%, which would lower the overall cost of the module by about 15 cents/Wp. An optimized PELA process compatible with commercial production is to be developed, and increased cell efficiency with sufficient product for adequate statistical analysis demonstrated. An excimer laser annealing station was set-up and made operational. The first experiment used 248 nm radiation to anneal phosphorus implants in polished and texture-etched silicon.

Source record↗
NASA NTRS1978

Automated Array Assembly, Phase 2. Low-cost Solar Array Project, Task 4

Work was done to verify the technological readiness of a select process sequence with respect to satisfying the Low Cost Solar Array Project objectives of meeting the designated goals of $.50 per peak watt in 1986 (1975 dollars). The sequence examined consisted of: (1) 3 inches diameter as-sawn Czochralski grown 1:0:0 silicon, (2) texture etching, (3) ion implanting, (4) laser annealing, (5) screen printing of ohmic contacts and (6) sprayed anti-reflective coatings. High volume production projections were made on the selected process sequence. Automated processing and movement of hardware at high rates were conceptualized to satisfy the PROJECT's 500 MW/yr capability. A production plan was formulated with flow diagrams integrating the various processes in the cell fabrication sequence.

Lopez, M.↗
NASA NTRS1980

The automated array assembly task of the low-cost silicon solar array project, phase 2

Several specific processing steps as part of a total process sequence for manufacturing silicon solar cells were studied. Ion implantation was identified as the preferred process step for impurity doping. Unanalyzed beam ion implantation was shown to have major cost advantages over analyzed beam implantation. Further, high quality cells were fabricated using a high current unanalyzed beam. Mechanically masked plasma patterning of silicon nitride was shown to be capable of forming fine lines on silicon surfaces with spacings between mask and substrate as great as 250 micrometers. Extensive work was performed on advances in plated metallization. The need for the thick electroless palladium layer was eliminated. Further, copper was successfully utilized as a conductor layer utilizing nickel as a barrier to copper diffusion into the silicon. Plasma etching of silicon for texturing and saw damage removal was shown technically feasible but not cost effective compared to wet chemical etching techniques.

Coleman, M. G.↗
NASA NTRS2013

NASA Tech Briefs, March 2013

Topics covered include: Remote Data Access with IDL Data Compression Algorithm Architecture for Large Depth-of-Field Particle Image Velocimeters Vectorized Rebinning Algorithm for Fast Data Down-Sampling Display Provides Pilots with Real-Time Sonic-Boom Information Onboard Algorithms for Data Prioritization and Summarization of Aerial Imagery Monitoring and Acquisition Real-time System (MARS) Analog Signal Correlating Using an Analog-Based Signal Conditioning Front End Micro-Textured Black Silicon Wick for Silicon Heat Pipe Array Robust Multivariable Optimization and Performance Simulation for ASIC Design; Castable Amorphous Metal Mirrors and Mirror Assemblies; Sandwich Core Heat-Pipe Radiator for Power and Propulsion Systems; Apparatus for Pumping a Fluid; Cobra Fiber-Optic Positioner Upgrade; Improved Wide Operating Temperature Range of Li-Ion Cells; Non-Toxic, Non-Flammable, -80 C Phase Change Materials; Soft-Bake Purification of SWCNTs Produced by Pulsed Laser Vaporization; Improved Cell Culture Method for Growing Contracting Skeletal Muscle Models; Hand-Based Biometric Analysis; The Next Generation of Cold Immersion Dry Suit Design Evolution for Hypothermia Prevention; Integrated Lunar Information Architecture for Decision Support Version 3.0 (ILIADS 3.0); Relay Forward-Link File Management Services (MaROS Phase 2); Two Mechanisms to Avoid Control Conflicts Resulting from Uncoordinated Intent; XTCE GOVSAT Tool Suite 1.0; Determining Temperature Differential to Prevent Hardware Cross-Contamination in a Vacuum Chamber; SequenceL: Automated Parallel Algorithms Derived from CSP-NT Computational Laws; Remote Data Exploration with the Interactive Data Language (IDL); Mixture-Tuned, Clutter Matched Filter for Remote Detection of Subpixel Spectral Signals; Partitioned-Interval Quantum Optical Communications Receiver; and Practical UAV Optical Sensor Bench with Minimal Adjustability.

Source record↗
NASA NTRS2014

Investigation of Backside Textures for Genesis Solar Wind Silicon Collectors

Genesis solar wind collectors were comprised of a suite of 15 types of ultrapure materials. The single crystal, pure silicon collectors were fabricated by two methods: float zone (FZ) and Czochralski (CZ). Because of slight differences in bulk purity and surface cleanliness among the fabrication processes and the specific vendor, it is desirable to know which variety of silicon and identity of vendor, so that appropriate reference materials can be used. The Czochralski method results in a bulk composition with slightly higher oxygen, for example. The CZ silicon array wafers that were Genesis-flown were purchased from MEMC Electronics. Most of the Genesis-flown FZ silicon was purchased from Unisil and cleaned by MEMC, although a few FZ wafers were acquired from International Wafer Service (IWS).

Gonzalez, C. P.↗
NASA NTRS1988

Processing, texture and mechanical properties of sintered silicon carbide

With regard to its favorable properties, in particular those shown at high temperatures, silicon carbide is of great interest for applications related to the construction of engines and turbines. Thus, silicon carbide could replace heat-resisting alloys with the objective to achieve a further increase in operational temperature. The present investigation is concerned with approaches which can provide silicon carbide material with suitable properties for the intended applications, taking into account the relations between characteristics of the raw material, material composition, sinter conditions, and results of the sintering process. The effects of density and texture formation on the mechanical properties are studied. It is found that a dense material with a fine-grained microstructure provides optimal mechanical properties, while any deviation from this ideal condition can lead to a considerable deterioration with respect to the material properties.

Landfermann, H.↗
NASA NTRS1976

Nonpropulsive applications of ion beams

Eight centimeter ion beam sources utilizing xenon and argon have been developed that operate over a wide range of beam energies and currents. Three types of processes have been studied: sputter deposition, ion beam machining, and ion beam surface texturing. The broad range of source operating conditions allows optimum sputter deposition of various materials. An ion beam source was used to ion mill laser reflection holograms using photoresist patterns on silicon. Ion beam texturing was tried with many materials and has a multitude of potential applications.

Hudson, W. R.↗
NASA NTRS1976

Nonpropulsive applications of ion beams

This paper describes the results of an investigation of the nonpropulsive applications of electric propulsion technology. Eight centimeter ion beam sources utilizing xenon and argon have been developed that operate over a wide range of beam energies and currents. Three types of processes have been studied - sputter deposition, ion beam machining, and ion beam surface texturing. The broad range of source operating conditions allows optimum sputter deposition of various materials. An ion beam source has also been used to ion mill laser reflection holograms using photoresist patterns on silicon. Ion beam texturing has been tried with many materials and has a multitude of potential applications.

Hudson, W. R.↗
DOE OSTI2020

PERC silicon PV infrared to ultraviolet optical model

Here, optical modeling of aluminum back surface field (Al-BSF) and passivated emitter and rear contact (PERC) silicon wafer solar cells are extended into the infrared wavelength range (300–2500 nm). The model incorporates ray tracing to account for pyramidal texture of the front silicon surface, free carrier absorption in the front emitter; bulk silicon wafer, BSF; and Lambertian scattering at the silicon back contact. Total reflectance of pyramidal textured cells with different contact geometries with and without encapsulation are simulated. Simulated reflectance and short circuit current density match well with experimental values. These physics-based optical models serve as input for evaluating optical and thermal management strategies for silicon wafer solar cells.

14 SOLAR ENERGY↗
NASA NTRS1980

Characterization of three types of silicon solar cells for SEPS deep-space missions. Volume 2: Current voltage characteristics of Solarex textured P(+)8 to 10 mil, planar P(+)8 to 10 mil and planar P(+)2 mil cells as a function of temperature and intensity

Three types of high performance silicon solar cells, textured P(+)8 to 10 mil, planar P(+)8 to 10 mil and planar P(+)2 mil were evaluated for their low temperature and low intensity (LTLI) performance. Sixteen cells of each type were subjected to 11 temperatures and 9 intensities. The textured P(+)8 to 10 mil cells provided the best performance both at 1 astronomical unit and at LTLI conditions. The average efficiencies of this cell were 14.5 percent at 1 solar constant/+25 C and 18.7 percent at 0.086 solar constant/-100 C.

Whitaker, A. F.↗
DOE OSTI2020

Effect of Surface Texture on Pinhole Formation in SiO x -Based Passivated Contacts for High-Performance Silicon Solar Cells

High-efficiency silicon solar cells rely on some form of passivating contact structure to reduce recombination losses at the crystalline silicon surface and losses at the metal/Si contact interface. One such structure is polycrystalline silicon (poly-Si) on oxide, where heavily doped poly-Si is deposited on a SiO x layer grown directly on the crystalline silicon (c-Si) wafer. Depending on the thickness of the SiO x layer, the charge carriers can cross this layer by tunneling (<2 nm SiO x thickness) or by direct conduction through disruptions in the SiOx, often referred to as pinholes, in thicker SiO x layers (>2 nm). In this work, we study structures with tunneling- or pinhole-like SiO x contacts grown on pyramidally textured c-Si wafers and expose variations in the SiOx layer properties related to surface morphology using electron-beam-induced current (EBIC) imaging. Using EBIC, we identify and mark regions with potential pinholes in the SiO x layer. We further perform high-resolution transmission electron microscopy on the same areas, thus allowing us to directly correlate locally enhanced carrier collection with variations in the structure of the SiO x layer. Our results show that the pinholes in the SiO x layer preferentially form in different locations based on the annealing conditions used to form the device. With greater understanding of these processes and by controlling the surface texture geometry, there is potential to control the size and spatial distribution of oxide disruptions in silicon solar cells with poly-Si on oxide-type contacts; usually, this is a random phenomenon on polished or planar surfaces. Such control will enable us to consistently produce high-efficiency devices with low recombination currents and low junction resistances using this contact structure.

14 SOLAR ENERGY↗
NASA NTRS1992

TEM studies of a circumstellar rock

Reported here is the discovery of crystals of titanium carbide in a grain of silicon carbide which formed as a circumstellar dust particle in the atmosphere of a carbon-rich star. Just as in the case of terrestrial rocks, whose assemblage of minerals gives us clues to the composition and conditions of the environment in which they formed, the titanium carbide crystals and their textural relationship to the silicon carbide give us important clues to the nature of the stellar atmosphere in which they formed. From microscopic studies of the relationships between the atomic planes of the silicon carbide and the titanium carbide, we can show that the titanium carbide cannot have existed as already-formed crystals in a gas around which silicon carbide subsequently condensed. An alternative possibility is that both minerals grew quickly and simultaneously from condensing gas in the rapidly cooling and expanding stellar atmosphere. Other microscopic features of the silicon carbide, such as abundant atomic layer disorder and crystal twinning, similarly suggest rapid grain growth. However, another possibility is that the titanium carbide grew inside of the silicon carbide by diffusion of titanium atoms. Our calculations suggest that this scenario is less likely, given the relatively short times (a year or less) for which stellar condensates can be expected to be exposed to temperatures high enough to make diffusion sufficiently rapid.

Bernatowicz, Thomas J.↗