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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1967

Guidance and control research

Cesium vapor heat conduction in thermionic energy converters, space charge distribution in neutral plasma, and titanium oxide thin films

THERMIONIC CONVERTER↗
NASA NTRS2009

Thin-Film Solid Oxide Fuel Cells

The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

Chen, Xin↗
NASA NTRS1981

Trimming epitaxial GaAs Schottky-diode parameters via anodic oxidation

Present day receivers operating at millimeter and sub-millimeter wavelengths most often rely, for their first mixers, on Schottky-barrier diodes formed on epitaxial GaAs. Crucial parameters for these diodes are breakdown voltage, series resistance, junction capacitance and forward conduction mechanism. Some of these are improved, others impaired, by change of epitaxy thickness. This paper describes experience with optimizing GaAs Schottky-diode parameters by anodic oxidation thinning of GaAs epitaxial layers. Monitoring of breakdown voltage of epitaxial GaAs in anodic oxidation solution provides indication of when thinning should be stopped in subjection to the breakdown voltage specification of diodes to be made from the material. Mixer and frequency-multiplier performance superior to any previously reported have been achieved by this technique.

Siegel, C. M.↗
NASA NTRS1994

Chemical vapor deposition of high T(sub c) superconducting films in a microgravity environment

Since the discovery of the YBaCuO bulk materials in 1987, Metalorganic Chemical Vapor Deposition (MOCVD) has been proposed for preparing HTSC high T(sub c) films. This technique is now capable of producing high-T(sub c) superconducting thin films comparable in quality to those prepared by any other methods. The MOCVD technique has demonstrated its superior advantage in making large area high quality HTSC thin films and will play a major role in the advance of device applications of HTSC thin films. The organometallic precursors used in the MOCVD preparation of HTSC oxide thin films are most frequently metal beta-diketonates. High T(sub c) superconductors are multi-component oxides which require more than one component source, with each source, containing one kind of precursor. Because the volatility and stability of the precursors are strongly dependent on temperature, system pressure, and carrier gas flow rate, it has been difficult to control the gas phase composition, and hence film stoichiometry. In order circumvent these problems we have built and tested a single source MOCVD reactor in which a specially designed vaporizer was employed. This vaporizer can be used to volatilize a stoichiometric mixture of diketonates of yttrium, barium and copper to produce a mixed vapor in a 1:2:3 ratio respectively of the organometellics. This is accomplished even though the three compounds have significantly different volatilities. We have developed a model which provides insight into the process of vaporizing mixed precursors to produce high quality thin films of Y1Ba2Cu3O7. It shows that under steady state conditions the mixed organometallic vapor must have a stoichiometric ratio of the individual organometallics identical to that in the solid mixture.

Levy, Moises↗
NASA NTRS1983

Interfacial layers in high-temperature-oxidized NiCrAl

The utility of Auger electron spectroscopy combined with ball cratering for depth analysis of oxide and diffusion layers produced in a Ni-14Cr-24Al alloy by oxidation in air at 1180 C for 25 hr is demonstrated. During postoxidation cooling, the oxide layers formed by this alloy spalled profusely. The remaining very thin oxide was primarily Cr2O3 with a trace of Ni. The underlying metal substrate exhibited gamma/gamma-prime and beta phases with a metallic interfacial layer which was similar to the bulk gamma/gamma-prime phase but slightly enriched in Cr and Al. These data are compared to electron microprobe results from a nominally identical alloy. The diffusion layer thickness is modelled with a simple mass balance equation and compared to recent results on the diffusion process in NiCrAl alloys.

Larson, L. A.↗
NASA NTRS1983

Development of a radiation-hard CMOS process

It is recommended that various techniques be investigated which appear to have the potential for improving the radiation hardness of CMOS devices for prolonged space flight mission. The three key recommended processing techniques are: (1) making the gate oxide thin. It has been shown that radiation degradation is proportional to the cube of oxide thickness so that a relatively small reduction in thickness can greatly improve radiation resistance; (2) cleanliness and contamination control; and (3) to investigate different oxide growth (low temperature dry, TCE and HCL). All three produce high quality clean oxides, which are more radiation tolerant. Technique 2 addresses the reduction of metallic contamination. Technique 3 will produce a higher quality oxide by using slow growth rate conditions, and will minimize the effects of any residual sodium contamination through the introduction of hydrogen and chlorine into the oxide during growth.

Power, W. L.↗
NASA NTRS1972

Thin film oxygen partial pressure sensor

The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.

Wortman, J. J.↗
NASA NTRS1981

Stress generation in thermally grown oxide films

A three dimensional finite element analysis was conducted, using the ANSYS computer program, of the stress state in a thin oxide film thermally formed on a rectangular piece of NiCrAl alloy. The analytical results indicate a very high compressive stress in the lateral directions of the film (approximately 6200 MPa), and tensile stresses in the metal substrate that ranged from essentially zero to about 55 MPa. It was found further that the intensity of the analytically determined average stresses could be approximated reasonably well by the modification of an equation developed previously by Oxx for stresses induced into bodies by thermal gradients.

Kumnick, A. J.↗
NASA NTRS1996

Simultaneous Use Of Zr And Mg Anodes In XPS

Improved x-ray source for x-ray photoelectron spectroscopy (XPS) contains both zirconium anode with beryllium window and magnesium anode with aluminum window. Previously unresolvable peaks of electron-energy spectrum become resolvable. Developed specifically for use in analyzing distributions of chemical constituents in surface layers of specimens of 2219 aluminum alloy and in determining the depths of surface oxide layers and relative proportions of aluminum and oxide in layers. Also used to study chemical constituents of surface layers in other material systems - for example, thin oxide films on silicon-based semiconductor devices, oxide films on alloys, and surface layers affecting adhesion of paints or bonding materials.

Allgeyer, D. F.↗
NASA NTRS1982

A study of the initial oxidation of evaporated thin films of aluminum by AES, ELS, and ESD

The room temperature, low pressure, oxidation of evaporated aluminum thin films has been studied by AES, ELS, and ESD. ESD was the most sensitive of the three methods to characterize a clean aluminum surface. Two oxidation stages were distinguished in the 0-3000 L oxygen exposure range. Between 0 and 50 L, the chemisorption of oxygen atoms was characterized by a fast decrease of the 67 eV AES Al peak and the 10 eV surface plasmon peak, and by a simultaneous increase of the oxygen AES and ESD signals. After 50 L, a change in slope in all AES and ESD signal variations was attributed to the slow growth of a thin layer of aluminum oxide, which after 3000 L was still only a few angstroms thick.

Bujor, M.↗
NASA NTRS1992

Analysis of samples of reflector materials which are multicoated and metal samples with oxide coatings which have been exposed the space environment in LDEF testing

The use of low angle x-ray diffraction (XRD), x-ray photoelectron spectrometry (XPS), and Auger spectrometry have been tested as suitable methods for analysis of thin oxide films on metal substrates exposed to the space environment during Long Duration Exposure Facility (LDEF) testing. No significant changes in the composition of silicon monoxide overcoats on aluminum surfaces was found. XPS and Auger testing appear to be more suitable for ultrathin films than XRD.

Neely, W. C.↗
NASA NTRS2016

Infrared Dielectric Properties of Low-Stress Silicon Oxide

Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric function are presented.

Silicon oxide↗
NASA NTRS2005

Titania Deposition on PMR-15

The formation, degree of crystallinity and adherence of dense titania (TiO2) thin film coatings on a high-temperature polyimide resin (PMR-15) can be influenced by the chemical composition of the polymer surface. Furthermore, solution deposition conditions can be adjusted to provide additional control over the morphology and crystallinity of the titania films. Recipes for solution-based titania deposition that used a slowly-hydrolyzing titanium fluoride salt in the presence of boric acid as a fluoride scavenger allowed growth of films up to 750 nm thick in 22 h. By adjusting solution pH and temperature, either amorphous titania or oriented crystalline anatase films could be formed. Surface sulfonate groups enhance the adhesion of solution-deposited oxide thin film coatings. While most sulfonation procedures severely damaged the PMR-15 surface, the use of chlorosulfonic acid followed by hydrolysis of the installed chlorosulfonyl groups provided effective surface sulfonation without significant surface damage. In some cases, the oxide deposition solution caused partial hydrolysis of the polymer surface, which itself was sufficient to allow adhesion of the titania film through chelation of titanium ions by exposed benzoic acid groups on the polymer surface.

Meador, Mary B.↗