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Results for “thin-film epitaxy”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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22 records · Page 2

Epitaxial thin film GaAs solar cells using OM-CVD techniques

A new approach has been initiated at JPL to fabricate thin-film, high efficiency GaAs solar cells on low-cost, single-crystal Si substrates having a thin CVD interlayer of Ge to minimize the lattice and thermal expansion mismatch. For initial experiments, n(+)/p GaAs cells were grown by OM-CVD on single-crystal GaAs and Ge wafers. Details of the growths and performance results will be presented. Subsequently, a combined epitaxial structure of OM-CVD GaAs on a strongly adherent Ge interlayer on (100) Si was grown. This is the first report of the successful growth of this composite structure. Low module costs projected by JPL SAMICS methodology calculations and the potential for 400-600W/kg space solar arrays will be discussed.

Stirn, R. J.↗

High-Quality, Thin-Film Germanium Single Crystals

Germanium (Ge) has crystallographic characteristics similar to GaAs and compatible with heteroepitaxial growth of GaAs. Further, since efficient heteroface cells already grown on thick Ge single crystals, Ge is excellent substrate candidate for thin-film cells. Required is single-crystal Ge thin film. Method developed for epitaxially growing highquality 10-um Ge thin films on ,100. NaCl substrates by plasma-enhanced chemical-vapor deposition (PECVD) and then separating Ge films by either melt-away or differential-thermal shear stress techniques. Free-standing films used for growth of AlxGa1-xAs/GaAs heteroface cells by similar techniques.

Outlaw, R. A.↗

The Wake Shield Facility: A space experiment platform

Information is given in viewgraph form on Wakeshield, a space experiment platform. The Wake Shield Facility (WSF) flight program objectives, product applications, commercial development approach, and cooperative experiments are listed. The program objectives are to produce new industry-driven electronic, magnetic, and superconducting thin-film materials and devices both in terrestrial laboratories and in space; utilize the ultra-vacuum of space for thin film epitaxial growth and materials processing; and develop commercial space hardware for research and development and enhanced access to space.

Allen, Joseph P.↗

Superconductivity applications for infrared and microwave devices II; Proceedings of the Meeting, Orlando, FL, Apr. 4, 5, 1991

Topics discussed include thin-film technology, microwave transmission lines and resonators, microwave devices and circuits, infrared detectors and bolometers, and superconducting junctions. Papers are presented on possible enhancement in bolometric response using free-standing film of YBa2Cu3O(x), aging and surface instability in high-Tc superconductors, epitaxial Tl2Ba2CaCu2O8 thin films on LaAlO3 and their microwave device properties, the performance of stripline resonators using sputtered YBCO films, and a coplanar waveguide microwave filter of YBa2Cu3O7. Attention is also given to the performance characteristics of Y-Ba-Cu-O microwave superconducting detectors, high-Tc bolometer developments for planetary missions, infrared detectors from YBaCuO thin films, high-temperature superconductor junction technology, and submillimeter receiver components using superconducting tunnel junctions.

Heinen, Vernon O.↗