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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Improved multiline HVDC circuit breakers with asymmetric conducting branches

Here, this paper proposes two improved multiline HVDC circuit breakers (DCBs) for HVDC grid applications, including type-1 improved multiline DCB and type-2 improved multiline DCB. The two improved DCBs draw on the core idea of extended H-bridge. m adjacent DC transmission lines share a single main breaker (MB) and surge arrester. Due to the extended H-bridge design, bidirectional current flow can be achieved by a unidirectional MB. An upper conducting branch and a lower conducting branch are connected to a DC line. The upper and lower conducting branches in the two improved multiline DCBs are asymmetric. The upper conducting branch of both two improved DCBs is formed by a load commutation switch (LCS) and an ultra-fast disconnector (UFD). The lower conducting branch of the type-1 improved scheme is composed of a diode and a UFD; and of the type-2 improved scheme is made up of diode stack. Compared with other DCBs, the proposed type-1 DCB and type-2 DCB are more cost effective. Among the five DCBs, the type-2 improved scheme requires the least number of individual switching actions. The effectiveness and feasibility of the proposed schemes are verified through simulation of a bipolar three-terminal HVDC grid in PSCAD/EMTDC.

42 ENGINEERING↗
DOE OSTI2022

A performance comparison between GaInP-on-Si and GaAs-on-Si 3-terminal tandem solar cells

The pursuit of ever-higher solar cell efficiencies has focused heavily on multijunction technologies. In tandem cells, subcells are typically either contacted via two terminals (2T) or four terminals (4T). Simulations show that the less-common three-terminal (3T) design may be comparable to 4T tandem cells in its compatibility with a range of materials, operating conditions, and methods for subcell integration, yet the 3T design circumvents shading losses of the 4T intermediate conductive layers. This study analyzes the performance of two superstrate 3T III-V-on-Si (III-V//Si) tandem cells: One has slightly greater current contribution from the Si bottom cell (GaInP//Si) and the other has substantially greater current contribution from the GaAs top cell (GaAs//Si). Our results show that both tandem cells exhibit the same efficiency (21.3%), thereby demonstrating that the third terminal allows for flexibility in the selection of the top cell material, similar to the 4T design.

14 SOLAR ENERGY↗
DOE OSTI2024

Four-Terminal Electrochemistry: A Back-Gate Controls the Electrochemical Potential of a 2D Working Electrode

We demonstrate that ultrathin semiconductor working electrodes integrated into metal–insulator–semiconductor (MIS) stacks are an enabling platform for understanding non-Faradaic semiconductor electrochemistry. Furthermore, 5 nm thick ZnO electrodes were deposited on 30 nm HfO 2 dielectric on a Pd “gate” electrode. Application of a bias V G between the Pd gate and the ZnO electrode causes electrons to accumulate in the ZnO layer as measured by recording the in-plane sheet conductance. By contacting the top surface of the ZnO layer with the electrolyte in a conventional three-electrode electrochemical cell, we show that the gate voltage V G modulates the electrochemical potential V ZnO of the ZnO film with respect to a reference electrode. Electrochemical potential changes ΔV ZnO up to –1 V vs Ag/Ag + are achieved for V G = +7 V. Furthermore, by measuring V ZnO vs V G , we extract the quantum capacitance CQ of the ZnO film as a function of the Fermi-level position, which provides a direct measure of the ZnO electronic density of states (DOS). Finally, we demonstrate that the gated ZnO working electrodes can disentangle the two principal components of electrochemical potential, namely, the Fermi-level shift Δδ and the double-layer charging energy eΔΦ EDL . This disentanglement hinges on a fundamental difference between back-gating and normal electrochemical control, namely, that electrochemical control requires double-layer charging, while back-gate control does not. Collectively, the results show that the backside gate electrode is an effective fourth terminal that enables measurements that are difficult to achieve in conventional three-terminal electrochemical setups.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Resistive Switching of Spinel Li 4 Ti 5 O 12 Lithium-Ion Battery Material for Neuromorphic Computing

The rapid rise of AI has exposed significant limitations in conventional Von Neumann computing architecture, particularly in regard to speed and energy efficiency. To address these challenges, researchers are exploring a brain-inspired neuromorphic architecture that mimics biological neural networks, enabling massive parallel processing with reduced power consumption for complex AI computational demands. Recent interest has focused on utilizing battery electrodes and solid electrolyte materials for their resistive switching properties in developing a neuromorphic architecture. These properties are precisely tuned through local- and bulk-level chemical composition modifications via voltage bias stimuli. In this study, we demonstrate fabricating a three-terminal lithium-ion electrochemical transistor based on lithium titanium oxide (Li 4 Ti 5 O 12 ), a popular lithium-ion battery anode material. We deposited and characterized LTO thin films using RF sputtering, demonstrating a 6 orders of magnitude increase in electronic conductivity upon lithiation, with conductivity plateauing after 20% lithiation. Density functional theory calculations revealed transformation from the insulating to conducting state, supported by experimental characterization through X-Ray Photoelectron Spectroscopy (XPS) and Direct Current (DC) polarization analyses. The fabricated transistor consisted of LTO as the channel layer, gold as source/drain terminals, lithium phosphorus oxynitride (LiPON) as the lithium-ion conductor, and copper as the gate terminal. The device exhibited clear hysteresis in transfer characteristics due to lithium insertion/extraction processes. Long-term potentiation (LTP) and long-term depression (LTD) measurements showed an asymmetric ratio of 1.425 and maximum/minimum conductance ratio of 7.83. When implemented in a deep neural network (DNN) for MNIST handwritten digit recognition, the device achieved 92.03% accuracy over 20 training epochs. Detailed transport mechanism analysis revealed the crucial role of oxygen vacancies and interface effects in device operation. Our preliminary findings establish LTO-based lithium-ion electrochemical transistors as promising candidates for energy-efficient neuromorphic computing applications, offering potential solutions to traditional Von Neumann architecture limitations.

25 ENERGY STORAGE↗
DOE OSTI2022

Electrical Gating of the Charge-Density-Wave Phases in Two-Dimensional h -BN/1T-TaS 2 Devices

Here we report on the electrical gating of the chargedensity- wave phases and current in h-BN-capped three-terminal 1T-TaS 2 heterostructure devices. It is demonstrated that the application of a gate bias can shift the source–drain current– voltage hysteresis associated with the transition between the nearly commensurate and incommensurate charge-density-wave phases. The evolution of the hysteresis and the presence of abrupt spikes in the current while sweeping the gate voltage suggest that the effect is electrical rather than self-heating. We attribute the gating to an electric-field effect on the commensurate charge-density-wave domains in the atomic planes near the gate dielectric. The transition between the nearly commensurate and incommensurate charge-density-wave phases can be induced by both the source– drain current and the electrostatic gate. Since the charge-densitywave phases are persistent in 1T-TaS 2 at room temperature, one can envision memory applications of such devices when scaled down to the dimensions of individual commensurate domains and few-atomic plane thicknesses.

2D van der Waals materials↗
DOE OSTI2022

Evidence for 4e charge of Cooper quartets in a biased multi-terminal graphene-based Josephson junction

Abstract In a Josephson junction (JJ) at zero bias, Cooper pairs are transported between two superconducting contacts via the Andreev bound states (ABSs) formed in the Josephson channel. Extending JJs to multiple superconducting contacts, the ABSs in the Josephson channel can coherently hybridize Cooper pairs among different superconducting electrodes. Biasing three-terminal JJs with antisymmetric voltages, for example, results in a direct current (DC) of Cooper quartet (CQ), which involves a four-fermion entanglement. Here, we report half a flux periodicity in the interference of CQ formed in graphene based multi-terminal (MT) JJs with a magnetic flux loop. We observe that the quartet differential conductance associated with supercurrent exhibits magneto-oscillations associated with a charge of 4 e , thereby presenting evidence for interference between different CQ processes. The CQ critical current shows non-monotonic bias dependent behavior, which can be modeled by transitions between Floquet-ABSs. Our experimental observation for voltage-tunable non-equilibrium CQ-ABS in flux-loop-JJs significantly extends our understanding of MT-JJs, enabling future design of topologically unique ABS spectrum.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Selective control of conductance modes in multi-terminal Josephson junctions

The Andreev bound state spectra of multi-terminal Josephson junctions form an artificial band structure, which is predicted to host tunable topological phases under certain conditions. However, the number of conductance modes between the terminals of a multi-terminal Josephson junction must be few in order for this spectrum to be experimentally accessible. In this work, we employ a quantum point contact geometry in three-terminal Josephson devices to demonstrate independent control of conductance modes between each pair of terminals and access to the single-mode regime coexistent with the presence of superconducting coupling. These results establish a full platform on which to realize tunable Andreev bound state spectra in multi-terminal Josephson junctions.

36 MATERIALS SCIENCE↗
DOE OSTI2024

A nanoscale photonic thermal transistor for sub-second heat flow switching

Abstract Control of heat flow is critical for thermal logic devices and thermal management and has been explored theoretically. However, experimental progress on active control of heat flow has been limited. Here, we describe a nanoscale radiative thermal transistor that comprises of a hot source and a cold drain (both are ~250 nm-thick silicon nitride membranes), which are analogous to the source and drain electrodes of a transistor. The source and drain are in close proximity to a vanadium oxide (VO x )-based planar gate electrode, whose dielectric properties can be adjusted by changing its temperature. We demonstrate that when the gate is located close ( < ~1 µm) to the source-drain device and undergoes a metal-insulator transition, the radiative heat transfer between the source and drain can be changed by a factor of three. More importantly, our nanomembrane-based thermal transistor features fast switching times ( ~ 500 ms as opposed to minutes for past three-terminal thermal transistors) due to its small thermal mass. Our experiments are supported by detailed calculations that highlight the mechanism of thermal modulation. We anticipate that the advances reported here will open new opportunities for designing thermal circuits or thermal logic devices for advanced thermal management.

42 ENGINEERING↗
DOE OSTI2021

Domain wall-magnetic tunnel junction spin–orbit torque devices and circuits for in-memory computing

There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation. Magnetic tunnel junction memory elements can be used for computation by manipulating a domain wall, a transition region between magnetic domains, but the experimental study of such devices has been limited by high current densities and low tunnel magnetoresistance. Here, we study prototypes of three-terminal domain wall-magnetic tunnel junction in-memory computing devices that can address data processing bottlenecks and resolve these challenges by using perpendicular magnetic anisotropy, spin–orbit torque switching, and an optimized lithography process to produce average device tunnel magnetoresistance TMR = 171% and average resistance-area product RA = 29 Ω μm2, close to the RA of the unpatterned film. Device initialization variation in switching voltage is shown to be curtailed to 7%–10% by controlling the domain wall initial position, which we show corresponds to 90%–96% accuracy in a domain wall-magnetic tunnel junction full adder simulation. Repeatability of writing and resetting the device is shown. A circuit shows an inverter operation between two devices, showing that a voltage window is large enough, compared to the variation noise, to repeatably operate a domain wall-magnetic tunnel junction circuit. These results make strides in using magnetic tunnel junctions and domain walls for in-memory and neuromorphic computing applications.

Alamdar, Mahshid (ORCID:0000000221732935)↗
DOE OSTI2021

Ion beam etching dependence of spin-orbit torque memory devices with switching current densities reduced by Hf interlayers

We report on the fabrication of nanoscale, three-terminal in-plane spin–orbit torque switching devices with low switching current densities. Critical parameters in the fabrication process, including the ion beam etching angle and time, were optimized to avoid fabrication defects and improve device yield. Measurements of the magnetic field and current-induced switching behavior of the tunnel junctions demonstrate a sensitivity to the nanopillar aspect ratio, which dictates the nanopillars’ anisotropy and thermal stability. Additionally, we show that the current density required for switching can be reduced and the device thermal stability increased by inserting Hf interlayers into the heterostructure. Micromagnetic simulations are generally consistent with the experimentally observed switching behavior, suggesting an increase in the interfacial perpendicular anisotropy at the CoFeB/MgO interface and the reduction in the Dzyaloshinskii–Moriya interaction at the W/CoFeB interface by the Hf interlayers.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Record >10 MV/cm mesa breakdown fields in Al 0.85 Ga 0.15 N/Al 0.6 Ga 0.4 N high electron mobility transistors on native AlN substrates

The ultra-wide bandgap of Al-rich AlGaN is expected to support a significantly larger breakdown field compared to GaN, but the reported performance thus far has been limited by the use of foreign substrates. In this Letter, the material and electrical properties of Al 0.85 Ga 0.15 N/Al 0.6 Ga 0.4 N high electron mobility transistors (HEMT) grown on a 2-in. single crystal AlN substrate are investigated, and it is demonstrated that native AlN substrates unlock the potential for Al-rich AlGaN to sustain large fields in such devices. We further study how Ohmic contacts made directly to a Si-doped channel layer reduce the knee voltage and increase the output current density. High-quality AlGaN growth is confirmed via scanning transmission electron microscopy, which also reveals the absence of metal penetration at the Ohmic contact interface and is in contrast to established GaN HEMT technology. Two-terminal mesa breakdown characteristics with 1.3 μm separation possess a record-high breakdown field strength of ~11.5 MV/cm for an undoped Al 0.6 Ga 0.4 N-channel layer. The breakdown voltages for three-terminal devices measured with gate-drain distances of 4 and 9 μm are 850 and 1500 V, respectively.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

A superconducting nanowire binary shift register

We present a design for a superconducting nanowire binary shift register, which stores digital states in the form of circulating supercurrents in high-kinetic-inductance loops. Adjacent superconducting loops are connected with nanocryotrons, three-terminal electrothermal switches, and fed with an alternating two-phase clock to synchronously transfer the digital state between the loops. A two-loop serial-input shift register was fabricated with thin-film NbN and a bit error rate of less than 10 –4 was achieved, when operated at a maximum clock frequency of 83 MHz and in an out-of-plane magnetic field of up to 6 mT. A shift register based on this technology offers an integrated solution for low-power readout of superconducting nanowire single photon detector arrays and is capable of interfacing directly with room-temperature electronics and operating unshielded in high magnetic field environments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Design and performance of parallel-channel nanocryotrons in magnetic fields

We introduce a design modification to conventional geometry of the cryogenic three-terminal switch, the nanocryotron (nTron). The conventional geometry of nTrons is modified by including parallel current-carrying channels, an approach aimed at enhancing the device's performance in magnetic field environments. The common challenge in nTron technology is to maintain efficient operation under varying magnetic field conditions. Here, we show that the adaptation of parallel channel configurations leads to an enhanced gate signal sensitivity, an increase in operational gain, and a reduction in the impact of superconducting vortices on nTron operation within magnetic fields up to 1 T. Contrary to traditional designs that are constrained by their effective channel width, the parallel nanowire channels permits larger nTron cross sections, further bolstering the device's magnetic field resilience while improving electro-thermal recovery times due to reduced local inductance. This advancement in nTron design not only augments its functionality in magnetic fields but also broadens its applicability in technological environments, offering a simple design alternative to existing nTron devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Analog-to-digital converter based on voltage-controlled superconducting devices

The increasing demand for cryogenic electronics in superconducting and quantum computing systems calls for ultra-energy-efficient data conversion architectures that remain functional at deep cryogenic temperatures. Here, in this work, we present the first design of a voltage-controlled superconducting flash analog-to-digital converter (ADC) based on a voltage-controlled quantum-enhanced Josephson junction field-effect transistor (JJFET). Exploiting its strong gate tunability and transistor-like behavior, the JJFET offers a scalable alternative to conventional current-controlled superconducting devices while aligning naturally with CMOS-style design methodologies. Building on our previously developed Verilog-A compact model calibrated to experimental data, we design and simulate a three-bit JJFET-based flash ADC targeted for integration within cryogenic control and readout circuitry in quantum computing. The core comparator block is realized through careful bias current selection and augmented with a three-terminal nanocryotron to precisely define reference voltages. Cascaded JJFET comparators ensure robust voltage gain, cascadability, and logic-level restoration across stages. Simulation results demonstrate accurate quantization behavior with ultra-low power dissipation, underscoring the feasibility of voltage-driven superconducting mixed-signal circuits. This work establishes a critical step toward unifying superconducting logic and data conversion, paving the way for scalable cryogenic architectures in quantum–classical co-processors, low-power artificial intelligence accelerators, and next-generation energy-constrained computing platforms.

Analog-to-digital converter↗
DOE OSTI2022

Designing strong and tunable magnetoelectric coupling in 2D trilayer heterostructures

Abstract The quest for electric-field control of nanoscale magnetic states such as skyrmions, which would impact the field of spintronics, has led to a challenging search for multiferroic materials or structures with strong magnetoelectric coupling and efficient electric-field control. Here we report a theoretical prediction that such phenomena can be realized in two-dimensional (2D) bilayer FE/PMM and trilayer FE/PMM/FE heterostructures (two-terminal and three-terminal devices), where FE is a 2D ferroelectric and PMM is a polar magnetic metal with strong spin–orbit coupling. Such a PMM has strong Dzyaloshinskii-Moriya interactions (DMI) that can generate skyrmions, while the FE can generate strong magnetoelectric coupling through polarization-polarization interactions. In trilayer heterostructures, contact to the metallic PMM layer enables multiple polarization configurations for electric-field control of skyrmions. We report density-functional-theory calculations for particular material choices that demonstrate the effectiveness of these arrangements, with the key driver being the polarization-polarization interactions between the PMM and FE layers. The present findings provide a method to achieve strong magnetoelectric coupling in the 2D limit and a new perspective for the design of related spintronics.

Materials Science↗
DOE OSTI2022

Phase dynamics in an AC-driven multiterminal Josephson junction analog

In the presence of an AC drive, multiterminal Josephson junctions exhibit the inverse AC Josephson effect, where the oscillations of the superconducting phase of each junction can lock onto one another or onto the external drive. The competition between these different phase-locked states results in a complex array of quantized voltage plateaus whose stability strongly depend on the circuit parameters of the shunted junctions. This phase diagram cannot be explored with low-temperature transport experiments alone, given the breadth of the parameter space, so we present an easily tunable analog circuit whose dynamical properties emulate those of a three-terminal junction. We focus on the observation of the multiterminal inverse AC Josephson effect, and we discuss how to identify Shapiro steps associated with each of the three junctions as well as their quartet states. We only observe integer phase-locked states in strongly overdamped networks, but fractional Shapiro steps appear as well when the quality factor of the junctions increases. Finally, we discuss the role of transverse coupling in the synchronization of the junctions.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Effect of Gamma Radiation on TaOₓ ECRAM

Electrochemical random access memory (ECRAM) is an emerging three-terminal nonvolatile memory (NVM) with highly controllable channel conductance which is promising for use as an analog memory (or synapse) in analog in-memory computing (IMC) systems. Energy-efficient analog IMC computing is particularly desirable for power-constrained, high-radiation environments such as satellites. However, little is known about the suitability of ECRAM for use in a total ionizing dose (TID) environment. Here, this work investigates the effect of Co-60 gamma radiation on the channel conductance and noise—two properties critical for analog IMC systems—of a TaO x -based ECRAM up to 17.3 Mrad(SiO 2 ) for both low- and high-channel-conductance state devices. A transient increase in conductance is observed in response to radiation which consists of two elements: an immediate increase in conductivity due to photocurrent and a secondary increase in conductivity, which has a slower rise and saturation and can persist for hours after exposure. This secondary, persistent photoconductivity is attributed to charging caused by hole trapping. These transient effects would not likely occur in a space environment due to the low dose rate compared with this experiment. No permanent change is found in the low conductance state (LCS) following exposure and the minor shift in the high conductance change would be less significant than the regular retention decay in this state. A permanent increase in the random telegraph noise is observed, possibly due to increased traps created in the channel. This work demonstrates that TaO x -based ECRAM is suitable for use in spaceborne analog IMC systems that are subject to significant TID.

ECRAM↗
DOE OSTI2021

Fault location in High Voltage Multi-terminal dc Networks Using Ensemble Learning

Precise location of faults for large distance power transmission networks is essential for faster repair and restoration process. High Voltage direct current (HVdc) networks using modular multi-level converter (MMC) technology has found its prominence for interconnected multi-terminal networks. This allows for large distance bulk power transmission at lower costs. However, they cope with the challenge of dc faults. Fast and efficient methods to isolate the network under dc faults have been widely studied and investigated. After successful isolation, it is essential to precisely locate the fault. The post-fault voltage and current signatures are a function of multiple factors and thus accurately locating faults on a multi-terminal network is challenging. In this paper, we discuss a novel data-driven ensemble learning based approach for accurate fault location. Here we utilize the eXtreme Gradient Boosting (XGB) method for accurate fault location. The sensitivity of the proposed algorithm to measurement noise, fault location, resistance and current limiting inductance are performed on a radial three-terminal MTdc network designed in Power System Computer Aided Design (PSCAD)/Electromagnetic Transients including dc (EMTdc).

24 POWER TRANSMISSION AND DISTRIBUTION↗