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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Methods of measurement for semiconductor materials, process control, and devices

Significant accomplishments include development of a procedure to correct for the substantial differences of transistor delay time as measured with different instruments or with the same instrument at different frequencies; association of infrared response spectra of poor quality germanium gamma ray detectors with spectra of detectors fabricated from portions of a good crystal that had been degraded in known ways; and confirmation of the excellent quality and cosmetic appearance of ultrasonic bonds made with aluminum ribbon wire. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon, development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

Bullis, W. M.↗
NASA NTRS1972

Methods of measurement for semiconductor materials, process control, and devices

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors.

Bullis, W. M.↗
NASA NTRS1977

Time delay and integration array (TDI) using charge transfer device technology. Phase 2, volume 1: Technical

The 20x9 TDI array was developed to meet the LANDSAT Thematic Mapper Requirements. This array is based upon a self-aligned, transparent gate, buried channel process. The process features: (1) buried channel, four phase, overlapping gate CCD's for high transfer efficiency without fat zero; (2) self-aligned transistors to minimize clock feedthrough and parasitic capacitance; and (3) transparent tin oxide electrode for high quantum efficiency with front surface irradiation. The requirements placed on the array and the performance achieved are summarized. This data is the result of flat field measurements only, no imaging or dynamic target measurements were made during this program. Measurements were performed with two different test stands. The bench test equipment fabricated for this program operated at the 8 micro sec line time and employed simple sampling of the gated MOSFET output video signal. The second stand employed Correlated Doubled Sampling (CDS) and operated at 79.2 micro sec line time.

Source record↗
DOE OSTI2022

Probing drift velocity dispersion in MAPbI 3 photovoltaic cells with nonlinear photocurrent spectroscopy

Conventional time-of-flight (TOF) measurements yield charge carrier mobilities in photovoltaic cells with time resolution limited by the RC time constant of the device, which is on the order of 0.1–1 µs for the systems targeted in the present work. We have recently developed an alternate TOF method, termed nonlinear photocurrent spectroscopy (NLPC), in which carrier drift velocities are determined with picosecond time resolution by applying a pair of laser pulses to a device with an experimentally controlled delay time. In this technique, carriers photoexcited by the first laser pulse are “probed” by way of recombination processes involving carriers associated with the second laser pulse. Here, we report NLPC measurements conducted with a simplified experimental apparatus in which synchronized 40 ps diode lasers enable delay times up to 100 µs at 5 kHz repetition rates. Carrier mobilities of ∼0.025 cm 2 /V/s are determined for MAPbI 3 photovoltaic cells with active layer thicknesses of 240 and 460 nm using this instrument. Here, our experiments and model calculations suggest that the nonlinear response of the photocurrent weakens as the carrier densities photoexcited by the first laser pulse trap and broaden while traversing the active layer of a device. Based on this aspect of the signal generation mechanism, experiments conducted with co-propagating and counter-propagating laser beam geometries are leveraged to determine a 60 nm length scale of drift velocity dispersion in MAPbI 3 films. Contributions from localized states induced by thermal fluctuations are consistent with drift velocity dispersion on this length scale.

14 SOLAR ENERGY↗
DOE OSTI2020

Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage Low-Current Silicon Carbide and Silicon Devices

This paper presents five dynamic temperature-sensitive electrical parameters (TSEPs) for the medium-voltage silicon carbide (SiC) and silicon (Si) devices. The theoretical temperature dependence of these parameters is analyzed. A test platform that enables to implement the temperature relevant dynamic characterization is developed. The tested TSEPs are summarized in terms of their relationship with junction temperature, drain/collector current, DC voltage, and external gate resistance. The comparison between the 3 kV 12 A Si IGBT and 3.3 kV 5 A SiC MOSFET with the identical TO-263 package is conducted. The results verify that the turn-off drain-source voltage switching rate achieves better thermal sensitivity for medium-voltage low-current SiC MOSFETs compared with Si IGBTs. Both the turn-on and turn-off delay time exhibit better thermal linearity for the two devices. The turn-off delay time further achieves five times better thermal sensitivity than the turn-on delay time for investigated medium-voltage SiC MOSFETs.

Ni, Ze↗
NASA NTRS2012

Coded acoustic wave sensors and system using time diversity

An apparatus and method for distinguishing between sensors that are to be wirelessly detected is provided. An interrogator device uses different, distinct time delays in the sensing signals when interrogating the sensors. The sensors are provided with different distinct pedestal delays. Sensors that have the same pedestal delay as the delay selected by the interrogator are detected by the interrogator whereas other sensors with different pedestal delays are not sensed. Multiple sensors with a given pedestal delay are provided with different codes so as to be distinguished from one another by the interrogator. The interrogator uses a signal that is transmitted to the sensor and returned by the sensor for combination and integration with the reference signal that has been processed by a function. The sensor may be a surface acoustic wave device having a differential impulse response with a power spectral density consisting of lobes. The power spectral density of the differential response is used to determine the value of the sensed parameter or parameters.

Solie, Leland P.↗
NASA NTRSDate not supplied

Spectrally Dependent Radiometric Measurement Errors Due to Ccd Serial Pixel-to-Pixel Readout Interference in the Ocean Color Instrument of the NASA PACE Mission

The Ocean Color Instrument on NASA’s PACE mission is a 322 887 nm hyperspectral imager with 1 km x 1 km nadir spatial resolution and 5 nm spectral resolution utilizing charge-coupled devices (CCDs) operating in Time Delay Integration (TDI) mode where each TDI column represents a different wavelength in 0.625 nm increments. After TDI, the charge is moved into serial output pixels and read out. The spatial resolution requires an 8.5 MHz readout rate. This only allows 59 ns for the CCD reset and video to be asserted and settled before sampling. The response exhibits serial pixel-to-pixel readout interference due to the lack of full settling. Each serial pixel value has a dependence on the value of the preceding pixel value. This leads to a spectrally dependent radiometric measurement error of up to 0.3 %. We explain the operation of the detection system, the behavior of the interference, and show the resulting measurement error based on data from both ground testing and on-orbit characterization.

Remote Sensing↗
NASA NTRS2024

Spectrally Dependent Radiometric Measurement Errors Due to CCD Serial Pixel-to-Pixel Readout Interference in the Ocean Color Instrument of the NASA PACE Mission

The Ocean Color Instrument on NASA’s PACE mission is a 322 887 nm hyperspectral imager with 1 km x 1 km nadir spatial resolution and 5 nm spectral resolution utilizing charge-coupled devices (CCDs) operating in Time Delay Integration (TDI) mode where each TDI column represents a different wavelength in 0.625 nm increments. After TDI, the charge is moved into serial output pixels and read out. The spatial resolution requires an 8.5 MHz readout rate. This only allows 59 ns for the CCD reset and video to be asserted and settled before sampling. The response exhibits serial pixel-to-pixel readout interference due to the lack of full settling. Each serial pixel value has a dependence on the value of the preceding pixel value. This leads to a spectrally dependent radiometric measurement error of up to 0.3 %. We explain the operation of the detection system, the behavior of the interference, and show the resulting measurement error based on data from both ground testing and on-orbit characterization.

Remote Sensing↗
NASA NTRSDate not supplied

Spectral Measurement Errors due to CCD Serial Pixel-to-Pixel Readout Interference in the Ocean Color Instrument of the NASA PACE Mission

The Ocean Color Instrument on NASA’s PACE mission is a hyperspectral imager with a spatial resolution of 1km x 1km and spectral resolution of 5nm in 2.5nm steps over 320-890nm. The detection system is based on two Charge-Coupled Devices (CCDs) operating in Time Delay Integration (TDI) mode to achieve high signal-to-noise ratio. The front-end optical imager is a rotating mirror-based system that images the ground-scene onto a slit with a field of view of 16km x 1km. The slit-image is re-imaged and wavelength dispersed on the CCDs. As the ground-scene moves through the slit, it moves along the CCD columns as charge is moved along with it. The accumulated charge at the end of each column is collected in a serial pixel. Each of the 16 CCD outputs read out 32 columns of the same ground scene spaced 0.625nm apart. The 32-pixel serial register is swiftly read out before the next TDI cycle. The telescope is spinning at 5.77Hz to achieve the required spatial resolution. This results in a serial pixel readout speed of 8.5MHz. Each serial read-cycle goes through a reset and video period that are each sampled to create a low-noise correlated double sample value. This only allows 59ns for the reset and video to be asserted and settled before sampling. Due to the short time period, the response of the CCD exhibits serial pixel-to-pixel readout interference as the reset and video signals do not have time to fully settle before sampling. Each serial pixel value therefore has a dependence on the value of the preceding pixel value. This leads to a spectral measurement error of up to 0.3%. We explain the operation of the detection system, the behavior of the interference and the resulting wavelength error with results from ground testing and on-orbit characterization.

Ulrik B Gliese↗
DOE OSTI2022

Broad-area laser awareness sensor

A laser-strike detection system includes an imaging sensor mounted on a platform, and a computing device. The imaging sensor outputs image frames that are each representative of a portion of the platform at a different time, during which a laser may be striking the platform. The computing device receives the image frames, and computes a delay map that indicates time-of-arrival delays of the laser beam at points on the portion of the platform. The computing device converts the delay map to a path-length variation map by multiplying the delay map by the propagation speed of light. The computing device fits a plane to the path-length variation map constrained by a topological model of the platform. The computing device computes angular deflections in x- and y-directions based upon the fit, which angular deflections define a direction from the platform to an emitter of the laser beam.

Sandusky, John↗
NASA NTRS2011

Surface acoustic wave coding for orthogonal frequency coded devices

Methods and systems for coding SAW OFC devices to mitigate code collisions in a wireless multi-tag system. Each device producing plural stepped frequencies as an OFC signal with a chip offset delay to increase code diversity. A method for assigning a different OCF to each device includes using a matrix based on the number of OFCs needed and the number chips per code, populating each matrix cell with OFC chip, and assigning the codes from the matrix to the devices. The asynchronous passive multi-tag system includes plural surface acoustic wave devices each producing a different OFC signal having the same number of chips and including a chip offset time delay, an algorithm for assigning OFCs to each device, and a transceiver to transmit an interrogation signal and receive OFC signals in response with minimal code collisions during transmission.

Malocha, Donald↗
NASA NTRS1961

Vanguard Satellite Separation Mechanisms

Early in the Vanguard program it became apparent that a thoroughly reliable means of separating the satellite packages from the third-stage rocket would be required. A completely self -contained standard mechanism was developed with redundant firing circuits for use on both test vehicles and satellite-launching vehicles. A change in the experimental objectives of the test-vehicle payload units necessitated modification of some of the standard separation mechanisms. A strap, pull-pin, girth-ring separation device was developed which employed the basic actuation of the standard mechanisms. Evidence of residual burning of the third stage made it necessary to delay separation longer than the time designed into the long-delay separation device. The standard separation mechanism was modified and integrated with the satellite command receiver system so that a ground command after third-stage burnout would cause separation. Flight performance of the various separation mechanisms proved their reliability; they performed without failure in all Vanguard launchings.

Baumann, Robert C.↗
DOE OSTI2024

Aging Mechanisms of Broad Area ~800 nm Laser Diodes

Here, this work presents a comprehensive study of early aging behavior (<500 hr) in ~800 nm, phosphide-based laser diodes grown by solid-source MBE with different oxygen concentration levels incorporated into the diode epitaxial layers during growth. The data indicate that lasing characteristics prior to aging are degraded by oxygen introduction, but the gradual power degradation rate after the onset of aging is not a strong function of oxygen at these concentration levels. Devices with oxygen concentrations of ~2.5 × 10 15 cm -3 showed significantly longer delay before the onset of aging (incubation time) than devices with less than 1 × 10 15 cm -3 oxygen. Generation-Recombination current and Laser Beam Induced Current measurements indicate that defect densities and aggregation are suppressed at the facets by oxygen, which can explain longer incubation times. Diagnostic data and parametric fits to diode simulation models show that increased cavity optical loss and defect density are primarily responsible for gradual power degradation during aging, rather than changes in nonradiative recombination. Mechanisms are proposed that explain this behavior, based on density functional theory (DFT) simulations and known recombination-enhanced defect generation phenomena.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Impact of nuclear reactor radiation on the performance of AlN/sapphire surface acoustic wave devices

The performance of an AlN/sapphire surface acoustic wave (SAW) delay line device was characterized in real time under irradiation inside a nuclear reactor. Both its resonant frequency and transmission efficiency were observed to respond to a change in reactor power. The response follows an exponentially saturating behavior after a step power increase, followed by an exponentially decaying recovery after reactor shutdown. A sensitivity analysis based on the governing electro-mechanical equations shows that the frequency shift can be attributed to the softening of sapphire’s elastic constants under neutron radiation. Additionally, a kinetic rate equation is adopted to interpret device response and describe its microstructural evolution. These results suggest that the AlN/sapphire SAW device remains functional under irradiation, is sensitive to neutron and gamma ray fluxes, and offers an opportunity for remote sensing and in-situ measurement of material properties when exposed to nuclear reactor environment.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1984

Si MOS devices at low temperatures

Low temperature operation of micron and submicron size Si MOSFETs (metal-oxide-semiconductor field-effect-transistors) results in their improved device characteristics. Various low temperature device properties such as increase in mobility, shift in the theshold voltage, increased reliability, etc., were considered. Other device characteristics such as the subthreshold behavior, delay times and miniaturization at low temperatures are discussed. Discussion includes presenting experimental results along with physical models explaining the observed effects.

Kamgar, A.↗