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At least 37 records · Page 2

Topological surface states on the nonpolar (110) and (111) surfaces of SmB 6

In order to clarify the controversial issue of the topological nature in a mixed-valent Kondo system, SmB 6 , we have explored the surface states on the nonpolar (110) surface of SmB 6 , employing both angle-resolved photoemission spectroscopy (ARPES) experiment and ab initio density-functional theory (DFT) band calculations. Based on ARPES spectroscopic fingerprints and the DFT surface band structures, we ascribe the observed spectral weights at $\bar{X}$ and $\bar{Y}$ on the (110) surface Brillouin zone to topological surface states (TSSs) of “topological insulator (TI)” nature and of “topological crystalline insulator (TCI)” nature, respectively. With varying the chemical potential, the double Dirac cones of the TCI nature exhibit a Lifshitz transition of Fermi surfaces with intriguing spin textures. Further, we have also examined the TSSs on the nearly nonpolar (111) surface of SmB 6 in connection with a recently reported ARPES result and proposed a way to probe the Dirac points that are buried in the bulk-projected bands.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Synthesis of Narrow SnTe Nanowires Using Alloy Nanoparticles

Topological crystalline insulator tin telluride (SnTe) provides a rich playground to examine interactions of correlated electronic states, such as ferroelectricity, topological surface states, and superconductivity. The study of SnTe nanowires may lead to even richer physics owing to the one-dimensional (1D) confinement effect and an increased contribution from the topological surface states. Thus, for transport measurements, SnTe nanowires must be synthesized with reduced diameters and high crystalline quality to ensure 1D confinement and phase coherence of the topological surface electrons. Here, we report a facile growth method to produce narrow SnTe nanowires with a high yield using alloy nanoparticles as growth catalysts. The average diameter of the SnTe nanowires grown using alloy nanoparticles is 85 nm, nearly a factor of three reduction compared to the average diameter of 240 nm when using gold nanoparticles as growth catalysts. Transport measurements reveal the effect of the nanowire diameter on the residual resistance ratio and magnetoresistance. Particularly, the ferroelectric transition temperature for SnTe evolves systematically with the nanowire diameter. In situ cryogenic cooling of narrow SnTe nanowires in a transmission electron microscope directly reveals the cubic to rhombohedral structural transition, which is associated with the ferroelectric transition. Thus, these narrow SnTe nanowires represent a model system to study electronic states arising from 1D confinement, such as 1D topological superconductivity and potential multiband superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Realizing tunable Fermi level in SnTe by defect control

The tuning of the Fermi level in tin telluride, a topological crystalline insulator, is essential for accessing its unique surface states and optimizing its electronic properties for applications such as spintronics and quantum computing. In this study, we demonstrate that the Fermi level in tin telluride can be effectively modulated by controlling the tin concentration during chemical vapor deposition synthesis. By introducing tin-rich conditions, we observed a blue shift in the x-ray photoelectron spectroscopy core-level peaks of both tin and tellurium, indicating an upward shift in the Fermi level. Further, this shift is corroborated by a decrease in work function values measured via ultraviolet photoelectron spectroscopy, confirming the suppression of Sn vacancies. Our findings provide a low-cost, scalable method to achieve tunable Fermi levels in tin telluride, offering a significant advancement in the development of materials with tailored electronic properties for next-generation technological applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Topological photonic crystal fiber

Photonic crystal fibers (PCFs) provide a versatile platform for various applications, thanks to the flexibility with which light guiding can be customized by modifying the fiber geometry. We realize a PCF with guided modes produced by photonic band structure topology rather than conventional mode-trapping mechanisms. The design, which is compatible with the stack-and-draw fabrication process, consists of a cross-sectional photonic topological crystalline insulator with a disclination. A bulk-defect correspondence produces degenerate topological modes, lying below the cladding light line. We use various theoretical methods to confirm their topological origins, including a spectral localizer that makes minimal assumptions about the band structure. Our experiments on the fabricated fiber show it transmitting visible to near-infrared light with low losses of 10 to 20 decibels per kilometer, which do not increase substantially when the fiber is bent. A comparable solid-core PCF of conventional design exhibits substantially higher bending losses. Optical fibers based on topological modes hold promise for improved performance and versatile functionalities.

Zhu, Bofeng [Nanyang Technological Univ. (Singapor↗

Higher-order topology induced by structural buckling

Abstract Higher-order topological insulator (HOTI) states, such as two-dimension (2D) HOTI featured with topologically protected corner modes at the intersection of two gapped crystalline boundaries, have attracted much recent interest. However, the physical mechanism underlying the formation of HOTI states is not fully understood, which has hindered our fundamental understanding and discovery of HOTI materials. Here we propose a mechanistic approach to induce higher-order topological phases via structural buckling of 2D topological crystalline insulators (TCIs). While in-plane mirror symmetry is broken by structural buckling, which destroys the TCI state, the combination of mirror and rotation symmetry is preserved in the buckled system, which gives rise to the HOTI state. We demonstrate that this approach is generally applicable to various 2D lattices with different symmetries and buckling patterns, opening a horizon of possible materials to realize 2D HOTIs. The HOTIs so generated are also shown to be robust against buckling height fluctuation and in-plane displacement. A concrete example is given for the buckled $\beta $-Sb monolayer from first-principles calculations. Our finding not only enriches our fundamental understanding of higher-order topology, but also opens a new route to discovering HOTI materials.

42 ENGINEERING↗

Quantum material topology via defect engineering

Current approaches of discovering new topological quantum materials, such as (magnetic) Weyl materials, by screening material databases or by rational design suffer from experimental challenges in growing the material in the desired geometry, hampering their potential applications. We take an approach of defect-engineering a topology starting from systems with experimentally well-controlled growth . Using SnTe, an experimentally viable topological crystalline insulator, as our model system, we elucidate the different effects of breaking time-reversal, inversion, and mirror symmetries using magnetic dopant defects, to controllably induce a topological phase transition. To this effect, we compute the thermodynamics, magnetism, and band-structure topology of magnetically doped SnTe using a full ab initio approach. In this process, we have discovered that Cr-doped SnTe is a Weyl semimetal. We have computed its classic Fermi-arc experimental signature on the (001) surface and also showed that it has a large anamolous Hall conductivity (AHC) of ~ 250 Ω - 1 cm - 1 . We predict a large Curie temperature ( T c ) of 62 K even at 3.3 % doping, with both T c and AHC being tunable with Cr concentration, suggesting potential for room-temperature applications. Our study in general paves the way for defect-designing room-temperature topological quantum phases.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Topological properties of SnSe/EuS and SnTe/CaTe interfaces

Herein, we use density functional theory calculations to study the electronic structure of epitaxial (111) interfaces of the topological crystalline insulators SnSe and SnTe with the magnetic insulator EuS and the non-magnetic insulator CaTe, respectively. We further consider both interface slab models with a vacuum region and periodic heterostructures without vacuum. We find that gaps of 21 meV at the Γ point and 9 meV at the M point arise in the topological state at the SnSe/EuS interface, due to the magnetic proximity effect, which breaks the time reversal symmetry. The surface state at Γ is shifted below the Fermi level by 88 meV and the surface state at M is shifted above the Fermi level by 47 meV, owing to band bending at the interface. By comparison, the topological state at the interface of SnTe/CaTe is unperturbed by the presence of non-magnetic CaTe.

36 MATERIALS SCIENCE↗

Bicircular Light Floquet Engineering of Magnetic Symmetry and Topology and Its Application to the Dirac Semimetal Cd 3 As 2

Here, we show that bicircular light (BCL) is a versatile way to control magnetic symmetries and topology in materials. The electric field of BCL, which is a superposition of two circularly polarized light waves with frequencies that are integer multiples of each other, traces out a rose pattern in the polarization plane that can be chosen to break selective symmetries, including spatial inversion. Using a realistic low-energy model, we theoretically demonstrate that the three-dimensional Dirac semimetal Cd 3 As 2 is a promising platform for BCL Floquet engineering. Without strain, BCL irradiation induces a transition to a noncentrosymmetric magnetic Weyl semimetal phase with tunable energy separation between the Weyl nodes. In the presence of strain, we predict the emergence of a magnetic topological crystalline insulator with exotic unpinned surface Dirac states that are protected by a combination of twofold rotation and time reversal (2') and can be controlled by light.

36 MATERIALS SCIENCE↗

Electronic structure in a transition metal dipnictide TaAs 2

Abstract The family of transition-metal dipnictides has been of theoretical and experimental interest because this family hosts topological states and extremely large magnetoresistance (MR). Recently, T a A s 2 , a member of this family, has been predicted to support a topological crystalline insulating state. Here, by using high-resolution angle-resolved photoemission spectroscopy (ARPES), we reveal both closed and open pockets in the metallic Fermi surface (FS) and linearly dispersive bands on the ( 2 ‾ 01 ) surface, along with the presence of extreme MR observed from magneto-transport measurements. A comparison of the ARPES results with first-principles computations shows that the linearly dispersive bands on the measured surface of T a A s 2 are trivial bulk bands. The absence of symmetry-protected surface state on the ( 2 ‾ 01 ) surface indicates its topologically dark nature. The presence of open FS features suggests that the open-orbit fermiology could contribute to the extremely large MR of T a A s 2 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Revealing a distortive polar order buried in the Fermi sea

Polar metals are challenging to identify spectroscopically because the fingerprints of electric polarization are often obscured by the presence of screening charges. Here, we unravel unambiguous signatures of a distortive polar order buried in the Fermi sea by probing the nonlinear optical response of materials driven by tailored terahertz fields. We apply this strategy to investigate the topological crystalline insulator Pb 1–x Sn x Te, tracking its soft phonon mode in the time domain and observing the occurrence of inversion symmetry breaking as a function of temperature. By combining measurements across the material’s phase diagram with ab initio calculations, we demonstrate the generality of our approach. These results highlight the potential of terahertz driving fields to reveal polar orders coexisting with itinerant electrons, thus opening additional avenues for material discovery.

74 ATOMIC AND MOLECULAR PHYSICS↗

Magnetism in the axion insulator candidate Eu 5 In 2 Sb 6

Eu 5 In 2 Sb 6 is a member of a family of orthorhombic nonsymmorphic rare-earth intermetallics that combines large localized magnetic moments and itinerant exchange with a low carrier density and perpendicular glide planes. This may result in special topological crystalline (wallpaper fermion) or axion insulating phases. Recent studies of Eu 5 In 2 Sb 6 single crystals have revealed colossal negative magnetoresistance and multiple magnetic phase transitions. Here, we clarify this ordering process using neutron scattering, resonant elastic x-ray scattering, muon spin-rotation, and magnetometry. The nonsymmorphic and multisite character of Eu 5 In 2 Sb 6 results in coplanar noncollinear magnetic structures with an Ising-like net magnetization along the a axis. A reordering transition, attributable to competing ferro- and antiferromagnetic couplings, manifests as the onset of a second commensurate Fourier component. In the absence of spatially resolved probes, the experimental evidence for this low-temperature state can be interpreted either as an unusual double- q structure or in a phase separation scenario. The net magnetization produces variable anisotropic hysteretic effects which also couple to charge transport. The implied potential for functional domain physics and topological transport suggests that this structural family may be a promising platform to implement concepts of topological antiferromagnetic spintronics. Published by the American Physical Society 2024

Rahn, M. C. (ORCID:0000000174038288)↗

Hofstadter Topology: Noncrystalline Topological Materials at High Flux

he Hofstadter problem is the lattice analog of the quantum Hall effect and is the paradigmatic example of topology induced by an applied magnetic field. Conventionally, the Hofstadter problem involves adding ~10 4 T magnetic fields to a trivial band structure. In this work, we show that when a magnetic field is added to an initially topological band structure, a wealth of possible phases emerges. Remarkably, we find topological phases that cannot be realized in any crystalline insulators. We prove that threading magnetic flux through a Hamiltonian with a nonzero Chern number or mirror Chern number enforces a phase transition at fixed filling and that a 2D Hamiltonian with a nontrivial Kane–Mele invariant can be classified as a 3D topological insulator (TI) or 3D weak TI phase in periodic flux. We then study fragile topology protected by the product of twofold rotation and time reversal and show that there exists a higher order TI phase where corner modes are pumped by flux. We show that a model of twisted bilayer graphene realizes this phase. Our results rely primarily on the magnetic translation group that exists at rational values of the flux. The advent of Moiré lattices renders our work relevant experimentally. Due to the enlarged Moiré unit cell, it is possible for laboratory-strength fields to reach one flux per plaquette and allow access to our proposed Hofstadter topological phase.

36 MATERIALS SCIENCE↗

Tunable fragile topology in Floquet systems

We extend the notion of fragile topology to periodically driven systems. Here we demonstrate driving-induced fragile topology in two different models, namely, the Floquet honeycomb model and the Floquet π-flux square-lattice model. In both cases, we discover a rich phase diagram that includes Floquet fragile topological phases protected by crystalline rotation or mirror symmetries, Floquet Chern insulators, and trivial atomic phases, with distinct boundary features. Remarkably, the transitions between different phases can be feasibly achieved by simply tuning the driving amplitudes, which is a unique feature of driving-enabled topological phenomena. Moreover, corner-localized fractional charges are identified as a “smoking-gun” signal of fragile topology in our systems. Our work paves the way for studying and realizing fragile topology in Floquet systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Topological invariants of a filling-enforced quantum band insulator

Traditional ionic and covalent compound insulators arise from a commensuration between electron count and system volume. On the other hand, conventional topological insulators, outside of quantum Hall effect systems, do not typically display such a commensuration. Instead, they can undergo a phase transition to a trivial insulator that preserves the electron filling. Nevertheless, in some crystalline insulators, termed filling-enforced quantum band insulators (feQBIs), electron filling can dictate nontrivial topology in the insulating ground state. Currently, little is known about the relation between feQBIs and conventional topological invariants. In this work, we study such relations for a particularly interesting example of a half-filling feQBI that is realized in space group 106 with spinless electrons. In this work, we prove that any four-band feQBI in space group 106 with filling 2 must have a nontrivial topological invariant, namely, the $\mathbb{Z}$ 2 glide invariant, and thus must have a quantized magnetoelectric polarizability θ = π. We thus have found a three-dimensional example where electron filling and band topology are tied. Such a locking raises intriguing questions about the generality of the band-inversion paradigm in describing the transition between trivial and topological phases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Noncompact atomic insulators

Here we study the conditions for Bloch bands to be spanned by symmetric and strictly compact Wannier states that have zero overlap with all lattice sites beyond a certain range. Similar to the characterization of topological insulators in terms of an algebraic (rather than exponential) localization of Wannier states, we find that there may be impediments to the compact localization even of topologically “trivial” obstructed atomic insulators. These insulators admit exponentially localized Wannier states centered at unoccupied orbitals of the crystalline lattice. First, we establish a sufficient condition for an insulator to have a compact representative. Second, for $\mathscr{C}_2$ rotational symmetry, we prove that the complement of fragile topological bands cannot be compact, even if it is an atomic insulator. Third, for $\mathscr{C}_4$ symmetry, our findings imply that there exist fragile bands with zero correlation length. Fourth, for a $\mathscr{C}_3$-symmetric atomic insulator, we explicitly derive that there are no compact Wannier states overlapping with less than 18 lattice sites. We conjecture that this obstruction generalizes to all finite Wannier sizes. Our results can be regarded as the stepping stone to a generalized theory of Wannier states beyond dipole or quadrupole polarization.

36 MATERIALS SCIENCE↗

Temperature-dependent electronic structure in a higher-order topological insulator candidate EuIn 2 As 2

Higher-order topological insulators (HOTIs) have enticed enormous research interests owing to their novelty in supporting gapless states along the hinges of a crystal. Despite several theoretical predictions, enough experimental confirmation of the HOTI state in crystalline solids is still lacking. Here, it is shown that interplay between topology and magnetism can give rise to various magnetic topological states, including HOTI and axion insulator states. Here, using high-resolution angle-resolved photoemission spectroscopy combined with the first-principles calculations, we report a systematic study of the electronic structure and its evolution across the magnetic phase transition in EuIn 2 As 2 which possesses an antiferromagnetic ground state below 16 K. Antiferromagnetic EuIn 2 As 2 has been predicted to host both the axion insulator and the HOTI states.We directly observe the linearly dispersing holelike bands crossing the Fermi level and the change in their dispersion across the magnetic phase transition. Our paper points to EuIn 2 As 2 as being a promising material for the exploration of interplay between topology and magnetism.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Third-order Hall effect in the surface states of a topological insulator

Time reversal and inversion symmetric materials fail to yield linear and nonlinear responses since they possess net zero Berry curvature. However, higher-order Hall response can be generated in these systems upon constraining the crystalline symmetries. Motivated by the recently discovered third-order Hall (TOH) response mediated by Berry connection polarizability, namely, the variation of the Berry connection with respect to an applied electric field, here, we investigate the existence of such a Hall effect in the surface states of hexagonal warped topological insulators (e.g., Bi 2 Te 3 ) under the application of only electric field. Using the semiclassical Boltzmann formalism, we investigate the effect of tilt and hexagonal warping on the Berry connection polarizability tensor and, consequently, the TOH effect, provided the Dirac cone remains gapless. We find that the magnitude of the response increases significantly with increasing tilt strength and warping, and therefore, they can provide the tunability of this effect. In addition, we also explore the effect of chemical doping on the TOH response in this system. Interestingly, we show, based on the symmetry analysis, that the TOH can be the leading-order response in this system, which can directly be verified in experiments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Structural disorder-driven topological phase transition in noncentrosymmetric BiTeI

In this work, we investigate using local structural disorder to induce a topologically nontrivial phase in a solid state system. Using first-principles calculations, we introduce structural disorder in the trivial insulator BiTeI and observe the emergence of a topological insulating phase. By modifying the bonding environments, the crystal-field splitting is enhanced, with spin-orbit interactions producing a band inversion in the bulk electronic structure. Analysis of the Wannier charge centers and the surface electronic structure reveals a strong topological insulator with Dirac surface states. Finally, we propose a prescription for inducing topological states from disorder in crystalline materials. Understanding how local environments produce topological phases is a key step for predicting disordered and amorphous topological materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗