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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Understanding Topological Pseudospin Transport in Van Der Waals' Materials

Because of symmetry, crystals often have degenerate valleys in the conduction or the valence band. This “valley” degree of freedom, similar to electronic charge and spin, has been proposed as an information carrier for new classes of electronic and optoelectronic devices. The basic requirement of information processing is to be able to create and manipulate a flow of valley pseudospin, i.e. valley pseudospin current. Valley pseudospin currents have been demonstrated in recent experiments in monolayer molybdenum disulfide and graphene on hexagonal boron nitride. However, the key fundamental questions regarding the nature of valley pseudospin transport remain open. This project will investigate the importance of Berry curvature effects in valley pseudospin transport and explore regimes for quantized valley Hall conductivity and pure valley pseudospin currents. The study will rely on combined optical and electrical transport techniques to create, manipulate and detect valley pseudospin currents in two-dimensional (2D) van der Waals’ materials of hexagonal structure. The insights provided by this research will deepen the understanding of valley pseudospin transport in 2D and help the development of novel valley-based technologies.

36 MATERIALS SCIENCE↗
NASA NTRS1983

Epitaxial growth of Hg/1-x/Cd/x/Te by chemical vapor transport

The chemical vapor transport technique was applied for the first time to the growth of Hg(1-x)Cd(x)Te epitaxial layers on CdTe substrates using a preannealed source material of Hg(0.8)Cd(0.2)Te. The experiment took place in a pretreated ampoule loaded with source material, HgI2 transport agent, and substrate and sealed under a residual pressure of about 10 to the -5th torr. The temperature of the source region was 590 C and that of the deposition zone 535 C with a nearly sigmoidal shaped profile between the end temperatures. The change in appearance of the substrate surface during the experiment is described, and the structures of the surface of the Hg(1-x)Cd(x)Te layer and of the layer itself as revealed by Nomarski contrast illumination and Laue X-ray diffraction, respectively, are discussed.

Wiedemeier, H.↗
DOE OSTI2022

Tunable plasmon-enhanced second-order optical nonlinearity in transition-metal dichalcogenide nanotriangles (Final Report for SC0008712)

The control of light-matter interaction at the nanoscale is a grand challenge that cuts across modern photonics, plasmonics, and optoelectronics. The development of simulation tools for predictive modeling of nanostructured light emitters and absorbers is critical to successfully tackling this grand challenge. Existing state-of-the-art tools are not suitable for the following reasons: a) Phenomenological models of materials, commonly employed in the full-wave solutions to Maxwell’s equations, are fit to experimental data for bulk materials and fall short when attempting to analyze nanostructures. b) Nonlinearities in optical response can arise solely from nanostructuring, and require time-dependent quantum electronic transport techniques to capture. c) Emergent materials with exotic and tunable physical properties are increasingly used, but their properties are very sensitive to the substrate, impurities, and edge termination, and require an accurate description of interband and intraband processes, as well as dissipation. d) Microscopic modeling of electronic transport usually employs simplified electrodynamics, and realistic models that couple full electronic transport with full-wave electrodynamics are needed for accurate photonics simulations. The objective of this project was to computational tools that will overcome the limitations faced by current modeling tools and provide an unprecedented level of accuracy for predictive modeling of light-matter interaction at the nanoscale.

36 MATERIALS SCIENCE↗
NASA NTRS1976

Electrochemical deposition of silver crystals aboard Skylab 4

Silver crystals were grown aboard Skylab 4 by an electro-chemical reaction and subsequently returned to earth for comparison with crystals grown at 1- and 5-g. Both the Skylab and earth-grown crystals show a variety of structures. Certain tendencies in structure dependency on gravity level, however, can be discerned. In addition, downward growing dendrite streamers; upward growing chunky crystal streamers; growth along an air/liquid interface; and ribbon, film, and fiber crystal habits were observed in experiments conducted on the ground with solutions of varying concentrations. It was also observed that the crystal structures of space and ground electro-deposited silver crystals were very similar to the structures of germanium selenide and germanium telluride crystals grown in space and on the ground by a vapor transport technique. Consideration of the data leads to the conclusions that: (1) the rate of electrochemical displacement of silver ions from a 5 percent aqueous solution by copper is predominantly diffussion controlled in space and kinetically controlled in 1- and higher-g because of augmentation of mass transport by convection; (2) downward and upward crystal streamers are the result of gravity-driven convection, the flow patterns of which can be delineated. Lateral growths along an air/liquid interface are the result of surface-tension-driven convection, the pattern of which also can be delineated; (3) electrolysis in space or low-g environments can produce either dendritic crystals with more perfect microcrystalline structures or massive, single crystals with fewer defects than those grown on ground or at higher g-levels. Ribbons or films of space-grown silicon crystals would find a ready market for electronic substrate and photocell applications. Space-grown dendritic, metal crystals present the possibility of unique catalysts. Large perfect crystals of various materials are desired for a number of electronic and optical applications; and (4) vapor transport growth of germanium selenide and germanium telluride is affected by convection mechanisms similar to the mechanisms hypothesized for the electrochemical deposition of silver crystals. Evidence and considerations leading to the preceding summaries and conclusions are presented. The implications of the findings and conclusions for technological applications are discussed, and recommendations for further experiments are presented.

Grodzka, P. G.↗
NASA NTRS2002

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions. The following are the research progress in the past two years. In-situ monitoring of partial pressure by optical absorption technique and visual observation of the growing crystal were performed during vapor growth of ZnSe. Low-temperature photoluminescence (PL) spectra and glow discharge mass spectroscopy (GDMS) were measured on ZnSe starting materials provided by various vendors and on bulk crystals grown from these starting materials by physical vapor transport (PVT) to study the effects of purification and contamination during crystal growth process. Optical characterization was performed on wafers sliced from the grown crystals of ZnSe, ZnTe and ZnSe(1-x),Te(x), (0<x<0.4). Energy band gaps at room temperature were determined from optical transmission measurements and a best fit curve to the band gap vs. composition, x, data gives a bowing parameter of 1.45. Low-temperature photoluminescence (PL) spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for the ZnSe(1-x),Te(x), samples, 0.09<x<0.39. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted as being associated with the exciton bound to Te clusters because of the high Te content in these samples. To validate numerical codes, in-situ monitoring during the PVT of HgI2 was designed. Optical absorption spectra of the vapor phase over HgI2 were measured for wavelengths between 200 and 600nm at sample temperatures between 349 and 610K. The Beer's Law constants for 15 wavelengths between 200 and 440 nm were determined. From these constants the vapor pressure of HgI2 was established as a function of temperature for the liquid and the solid Beta-phases To characterize the growth conditions during the PVT growth of In-doped ZnSe the optical absorbance of the vapor phase over the In-Se system were measured and were used to obtain the partial pressures of Se2(g) and In2Se(g).

Su, Ching-Hua↗
DOE OSTI2024

On the Lineshapes of Temperature-Dependent Transport Measurements of Superconductors Under Pressure

Recent reports of superconductivity in the vicinity of room temperature have been the subject of discussion by the community. Specifically, features in the resistance-temperature (R-T) relations have raised questions. We show that many of these features can arise from previously unaccounted-for dynamic effects associated with the AC transport techniques often used in high- pressure experiments. These dynamic AC effects can cause the apparent resistance (R apparent ) to diverge from the DC resistance (R DC ), sharpen measured superconducting transitions, and produce other features in the measured R-T response. Here, we also show that utilizing the full output of phase-sensitive transport measurements provides a valuable probe of superconducting samples in difficult-to-measure systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Alloying effect of rare-earth tritellurides on the charge density wave and magnetic properties

Among many van der Waals materials rare-earth tritellurides (RTe3) allow studying several phenomena like magnetic, superconducting, and charge density wave (CDW). These studies show the effect of cationic alloying of antiferromagnetic RTe3 for fully tunable near room-temperature CDW properties. DyxGd1−xTe3 and DyxTb1−xTe3 alloys were synthesized through a chemical vapor transport technique, and the rare-earth element composition was controlled by changing the ratio of rare-earth metal reagents. The results show that the lattice parameters can be continuously tuned with the composition of the rare-earth cations leading to the variation of the internal chemical pressure. Temperature-dependent Raman spectroscopy and electric transport measurement show that the CDW transition temperature (TCDW) of RTe3 alloys varies with lattice parameters/chemical pressure spanning across 300–380 K. Additional magnetism studies offer the first insights into the magnetic ordering in RTe3 alloys. The emergence of multiple magnetic transitions implies complex magnetic interactions that arise from interactions between different rare-earth elements. Overall findings introduce ways to control the CDW behavior and provide valuable insights into the magnetic ordering in RTe3 alloys, contributing to further investigation and a better understanding of their properties.

Physics↗
NASA NTRS1988

Finite elements: Theory and application

Recent advances in FEM techniques and applications are discussed in reviews and reports presented at the ICASE/LaRC workshop held in Hampton, VA in July 1986. Topics addressed include FEM approaches for partial differential equations, mixed FEMs, singular FEMs, FEMs for hyperbolic systems, iterative methods for elliptic finite-element equations on general meshes, mathematical aspects of FEMS for incompressible viscous flows, and gradient weighted moving finite elements in two dimensions. Consideration is given to adaptive flux-corrected FEM transport techniques for CFD, mixed and singular finite elements and the field BEM, p and h-p versions of the FEM, transient analysis methods in computational dynamics, and FEMs for integrated flow/thermal/structural analysis.

Dwoyer, D. L.↗
NASA NTRS1986

Silicon purification using a Cu-Si alloy source

Production of 99.9999% pure silicon from 98% pure metallurgical grade (MG) silicon by a vapor transport filtration process (VTP) is described. The VTF process is a cold wall version of an HCl chemical vapor transport technique using a Si:Cu3Si alloy as the silicon source. The concentration, origin, and behavior of the various impurities involved in the process were determined by chemically analyzing alloys of different purity, the slag formed during the alloying process, and the purified silicon. Atomic absorption, emission spectrometry, inductively coupled plasma, spark source mass spectrometry, and secondary ion mass spectroscopy were used for these analyses. The influence of the Cl/H ratio and the deposition temperature on the transport rate was also investigated.

Powell, R. C.↗
DOE OSTI2025

Electronic structure of the honeycomb iridate Cu 2 ⁢IrO 3 at high pressure

Cu 2 IrO 3 has attracted recent interest due to its proximity to the Kitaev quantum spin liquid state and the complex structural response observed at high pressures. We use x-ray spectroscopy and scattering as well as electrical transport techniques to unveil the electronic structure of Cu 2 IrO 3 at ambient and high pressures. Despite featuring a Ir 4+ J eff = 1/2 state at ambient pressure, Ir L 3 -edge resonant inelastic x-ray scattering reveals broadened electronic excitations that point to the importance of Ir 5d-Cu 3d interaction. High pressure first drives an Ir-Ir dimer state with collapsed < L · S > and < L z >/< S z >, signaling the formation of 5d molecular orbitals. A novel Cu → Ir charge transfer is observed above 30 GPa at low temperatures, leading to an approximate Ir 3+ and Cu 1.5+ valence, with persistent insulating electrical transport seemingly driven by charge segregation of Cu 1+ /Cu 2+ ions into distinct sites. Concomitant x-ray spectroscopy and diffraction measurements through different thermodynamic paths demonstrate a strong electron-lattice coupling, with J eff = 1/2 and Ir 3+ /Cu 1.5+ electronic states occurring only in phases 1 and 5, respectively. Remarkably, the charge-transfer state can only be reached if Cu 2 IrO 3 is pressurized at low temperature, suggesting that phonons play an important role in the inhibiting this phase. Furthermore, these results point to the choice of thermodynamic path across interplanar collapse transition as a key parameter to access novel states in intercalated iridates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2000

Vapor Growth and Characterization of ZnSeTe Solid Solutions

Six ZnSe(1-x)Te(x) crystals were grown by the physical vapor transport technique. For each of the source material compositions, x = 0.10, 0.20 and 0.30, two crystals were grown - one under the horizontal and the other under the vertical stabilized configurations. The axial and radial compositional uniformity were measured by precision density measurements, wavelength dispersive X-ray spectroscopy (WDS) and optical transmission mappings. The measured radial ZnTe content was quite uniform for all the grown crystals except the horizontally grown crystal for x = 0.30. The WDS results on this crystal indicated a core with uniform ZnTe content, about 0.38, surrounded by a thin region of high ZnTe content with x = 0.8. This feature was confirmed by the SEM back scattering electron images. For the three source compositions the axial compositional variations for the vertically grown crystals were more uniform than that for the horizontally grown crystals. The measured compositions in the crystals grown from source composition of x = 0.10 suggest that the transport mechanism in the system can not be interpreted by a simple one-dimensional diffusion limited model.

Su, Ching-Hua↗
DOE OSTI2020

Mott and generalized Wigner crystal states in WSe 2 /WS 2 moiré superlattices

Moiré superlattices can be used to engineer strongly correlated electronic states in two-dimensional van der Waals heterostructures, as recently demonstrated in the correlated insulating and superconducting states observed in magic-angle twisted-bilayer graphene and ABC trilayer graphene/boron nitride moiré superlattices. Transition metal dichalcogenide moiré heterostructures provide another model system for the study of correlated quantum phenomena because of their strong light–matter interactions and large spin–orbit coupling. However, experimental observation of correlated insulating states in this system is challenging with traditional transport techniques. Here we report the optical detection of strongly correlated phases in semiconducting WSe 2 /WS 2 moiré superlattices. We use a sensitive optical detection technique and reveal a Mott insulator state at one hole per superlattice site and surprising insulating phases at 1/3 and 2/3 filling of the superlattice, which we assign to generalized Wigner crystallization on the underlying lattice. Furthermore, the spin–valley optical selection rules of transition metal dichalcogenide heterostructures allow us to optically create and investigate low-energy excited spin states in the Mott insulator. We measure a very long spin relaxation lifetime of many microseconds in the Mott insulating state, orders of magnitude longer than that of charge excitations. Here, our studies highlight the value of using moiré superlattices beyond graphene to explore correlated physics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

The phononic and charge density wave behavior of entire rare-earth tritelluride series with chemical pressure and temperature

Here, we present comprehensive phononic and charge density wave properties (CDW) of rare-earth van der Waals tritellurides through temperature dependent angle-resolved Raman spectroscopy measurements. All the possible rare-earth tritellurides (RTe3) ranging from R = La–Nd, Sm, Gd–Tm were synthesized through a chemical vapor transport technique to achieve high quality crystals with excellent CDW characteristics. Raman spectroscopy studies successfully identify the emergence of the CDW state and transition temperature (TCDW), which offers a non-destructive method to identify their CDW response with micron spatial resolution. Temperature dependent Raman measurements further correlate how the atomic mass of metal cations and the resulting chemical pressure influence its CDW properties and offer detailed insight into the strength of CDW amplitude mode-phonon coupling during the CDW transition. Angle-resolved Raman measurements offer the first insights into the CDW-phonon symmetry interplay by monitoring the change in the symmetry of phonon mode across the CDW transition. Overall results introduce the library of RTe3 CDW materials and establish their characteristics through the non-destructive angle-resolved Raman spectroscopy technique.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Nonsuperconducting electronic ground state in pressurized BaFe 2 S 3 and BaFe 2 S 2.5 Se 0.5

In this work, we report a comprehensive study of the spin ladder compound BaFe 2 S 2.5 Se 0.5 using neutron diffraction, inelastic neutron scattering, high pressure synchrotron diffraction, and high pressure transport techniques. We find that BaFe 2 S 2.5 Se 0.5 possesses the same C m c m structure and stripe antiferromagnetic order as does BaFe 2 S 3 , but with a reduced Néel temperature of T N = 98 K compared to 120 K for the undoped system, and a slightly increased ordered moment of 1.40 μ B per iron. Additionally, the low-energy spin excitations in BaFe 2 S 2.5 Se 0.5 are likewise similar to those observed in BaFe 2 S 3 . However, unlike the reports of superconductivity in BaFe 2 S 3 below T c ~ 14 K under pressures of 10 GPa or more, we observe no superconductivity in BaFe 2 S 2.5 Se 0.5 at any pressure up to 19.7 GPa. In contrast, the resistivity exhibits an upturn at low temperature under pressure. Furthermore, we show that additional high-quality samples of BaFe 2 S 3 synthesized for this study likewise fail to become superconducting under pressure, instead displaying a similar upturn in resistivity at low temperature. These results demonstrate that microscopic, sample-specific details play an important role in determining the ultimate electronic ground state in this spin ladder system. We suggest that the upturn in resistivity at low temperature in both BaFe 2 S 3 and BaFe 2 S 2.5 Se 0.5 may result from Anderson localization induced by S vacancies and random Se substitutions, enhanced by the quasi-one-dimensional ladder structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Ex-Situ Recrystallization of CIGS via Metal Halides

Post Deposition Treatments (PDT) have been key to improving the efficiency of CIGS solar cells. While efficiency has continued to increase, for thermal evaporation processes, high substrate temperature and low deposition rates are a necessity. For many chemical processes, chemical vapor transport techniques can be used to both purify and grow both large and pure crystalline compounds. This is often done with a halide species and temperature. Here, by using the substituent metals of CIGS in confluence with a halide, we explored the possibility to grow a CIGS layer at low temperature and fast rate while still having sufficiently high efficiency.

14 SOLAR ENERGY↗
NASA NTRS1974

The lower ionosphere of Venus

Galactic cosmic ray bombardment provides a permanent background ionosphere in planetary atmospheres. A transport technique is used to compute the cosmic ray ionization rate profile in a model of the Venusian atmosphere at altitudes between 55 and 100 km. These ionization rates are then applied to a model of ion chemistry to predict equilibrium electron and ion density profiles. Ionization rates for typical solar flare proton events are available from earlier calculations and have been included.

Dubach, J.↗