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NASA NTRS1993

Video transmission on ATM networks

The broadband integrated services digital network (B-ISDN) is expected to provide high-speed and flexible multimedia applications. Multimedia includes data, graphics, image, voice, and video. Asynchronous transfer mode (ATM) is the adopted transport techniques for B-ISDN and has the potential for providing a more efficient and integrated environment for multimedia. It is believed that most broadband applications will make heavy use of visual information. The prospect of wide spread use of image and video communication has led to interest in coding algorithms for reducing bandwidth requirements and improving image quality. The major results of a study on the bridging of network transmission performance and video coding are: Using two representative video sequences, several video source models are developed. The fitness of these models are validated through the use of statistical tests and network queuing performance. A dual leaky bucket algorithm is proposed as an effective network policing function. The concept of the dual leaky bucket algorithm can be applied to a prioritized coding approach to achieve transmission efficiency. A mapping of the performance/control parameters at the network level into equivalent parameters at the video coding level is developed. Based on that, a complete set of principles for the design of video codecs for network transmission is proposed.

Chen, Yun-Chung↗

NASA NTRS1997

Crystal Growth Control

We present an innovative design of a vertical transparent multizone furnace which can operate in the temperature range of 25 C to 750 C and deliver thermal gradients of 2 C/cm to 45 C/cm for the commercial applications to crystal growth. The operation of the eight zone furnace is based on a self-tuning temperature control system with a DC power supply for optimal thermal stability. We show that the desired thermal profile over the entire length of the furnace consists of a functional combination of the fundamental thermal profiles for each individual zone obtained by setting the set-point temperature for that zone. The self-tuning system accounts for the zone to zone thermal interactions. The control system operates such that the thermal profile is maintained under thermal load, thus boundary conditions on crystal growth ampoules can be predetermined prior to crystal growth. Temperature profiles for the growth of crystals via directional solidification, vapor transport techniques, and multiple gradient applications are shown to be easily implemented. The unique feature of its transparency and ease of programming thermal profiles make the furnace useful for scientific and commercial applications for the determination of process parameters to optimize crystal growth conditions.

Duval, Walter M. B.↗

NASA NTRS1998

The Design of a Transparent Vertical Multizone Furnace: Application to Thermal Field Tuning and Crystal Growth

We present an innovative design of a vertical transparent multizone furnace which can operate in the temperature range of 25 C to 750 C and deliver thermal gradients of 2 C/cm to 45 C/cm for the commercial applications to crystal growth. The operation of the eight zone furnace is based on a self-tuning temperature control system with a DC power supply for optimal thermal stability. We show that the desired thermal profile over the entire length of the furnace consists of a functional combination of the fundamental thermal profiles for each individual zone obtained by setting the set-point temperature for that zone. The self-tuning system accounts for the zone to zone thermal interactions. The control system operates such that the thermal profile is maintained under thermal load, thus boundary conditions on crystal growth ampoules can be predetermined prior to crystal growth. Temperature profiles for the growth of crystals via directional solidification, vapor transport techniques, and multiple gradient applications are shown to be easily implemented. The unique feature of its transparency and ease of programming thermal profiles make the furnace useful in scientific and commercial applications for determining the optimized process parameters for crystal growth.

Duvual, Walter M. B.↗

NASA NTRS1999

Point Defect Distributions in ZnSe Crystals: Effects of Gravity Vector Orientation during Physical Vapor Transport Growth

ZnSe crystals were grown by the physical vapor transport technique under horizontal and vertical (stabilized and destabilized) configurations. Secondary ion mass spectroscopy and photoluminescence measurements were performed on the ZnSe samples to map the distributions of [Si], [Fe], [Cu], [Al] and [Li or Na] impurities as well as Zn vacancy, [V(zn)]. The annealings of ZnSe under controlled Zn pressures were studied to correlate the measured photoluminescence emission intensity to the equilibrium Zn partial pressure. In the horizontal grown crystals the segregations of [Si], [Fe], [Al] and [V(zn)] along the gravity vector direction were observed whereas in the vertically stabilized grown crystal the segregations of these point defects were radially symmetrical. No apparent pattern was observed on the measured distributions in the vertically destabilized grown crystal. The observed segregations in the three growth configurations were interpreted based on the possible buoyancy-driven convection in the vapor phase.

Su, Ching-Hua↗

NASA NTRS1998

Vapor Growth and Characterization of Cr-Doped ZnSe Crystals

Cr-doped ZnSe single crystals were grown by self-seeded physical vapor transport technique under both vertical (stabilized) and horizontal configurations. The source materials were mixtures of ZnSe and CrSe. The growth temperatures were in the range of 1140 to 1150C and the furnace translation rates were 1.9 to 2.2 mm/day. The surface morphology of the as-grown crystals was examined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The different features on the as-grown surface of the vertically and horizontally grown crystals suggests that different growth mechanisms were involved for the two growth configurations. The [Cr] doping levels were determined to be in the range of 1.8 to 8.3 x 10(exp 19)/cubic centimeter from optical absorption measurements. The crystalline quality of the grown crystals were examined by high resolution triple crystal X-ray diffraction (HRTXD) analysis.

Su, Ching-Hua↗

NASA NTRS1998

Characterization of Semi-Insulating CdTe Crystals Grown by Horizontal Seeded Physical Vapor Transport

CdTe crystals were grown by horizontal seeded physical vapor transport technique in uncoated and boron nitride coated fused silica ampoules with the source materials near the congruent sublimation condition. The grown crystals were characterized by current-voltage measurements, low temperature photoluminescence spectroscopy, near IR transmission optical microscopy, spark source mass spectroscopy and chemical etching. The measured resistivities of the crystals were in the high-10(exp 8) ohm-cm range. Although the crystal grown in the boron nitride coating was contaminated with boron from the photoluminescence measurements, the coating yielded a single crystal with no inclusions or precipitates.

Chattopadhyay, K.↗

NASA NTRS1999

Vapor Growth and Characterization of Cr-Doped ZnSe Crystals

Cr-doped ZnSe single crystals were grown by a self-seeded physical vapor transport technique in both vertical (stabilized) and horizontal configurations. The source materials were mixtures of ZnSe and CrSe. Growth temperatures were in the range of 1140-1150 C and the furnace translation rates were 1.9-2.2 mm/day. The surface morphology of the as-grown crystals was examined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Different features of the as-grown surface of the vertically and horizontally grown crystals suggest that different growth mechanisms were involved in the two growth configurations. The [Cr] doping levels were determined to be in the range of 1.8-8.3 x 10 (exp 19) cm (exp -3) from optical absorption measurements. The crystalline quality of the grown crystals were examined by high-resolution triple-crystal X-ray diffraction (HRTXD) analysis.

Su, Ching-Hua↗

NASA NTRS1999

Point Defect Distributions in ZnSe Crystals: Effects of Gravity Vector Orientation During Physical Vapor Transport Growth

ZnSe crystals were grown by the physical vapor transport technique under horizontal and vertical (stabilized and destabilized) configurations. Secondary ion mass spectroscopy and photoluminescence measurements were performed on the grown ZnSe samples to map the distributions of [Si], [Fe], [Cu], [Al] and [Li or Na] impurities as well as Zn vacancy, [V (sub Zn)]. Annealings of ZnSe under controlled Zn pressures were studied to correlate the measured photoluminescence emission intensity to the equilibrium Zn partial pressure. In the horizontal grown crystals the segregations of [Si], [Fe], [Al] and [V (sub Zn)] were observed along the gravity vector direction whereas in the vertically stabilized grown crystal the segregation of these point defects was radially symmetrical. No apparent pattern was observed on the measured distributions in the vertically destabilized grown crystal. The observed segregations in the three growth configurations were interpreted based on the possible buoyancy-driven convection in the vapor phase.

Su, Ching-Hua↗

NASA NTRS1999

Characterization of ZnSe Single Crystals Grown by Physical Vapor Transport

ZnSe bulk crystals were grown by self-seeded physical vapor transport technique in horizontal and vertical configurations. The impurities and defects in the grown crystals were studied by glow discharge mass spectroscopy (GDMS) and low temperature photoluminescence (PL) measurements. The PL results on the starting material and the grown crystals are consistent with the low impurity levels measured by GDMS. The crystalline quality of the grown crystals were examined by synchrotron white beam X-ray topography (SWBXT) and high resolution triple X-ray diffraction (HRTXD). The SWBXT shows that, aside from twins, the overall crystalline quality of the vapor grown ZnSe crystals, especially in the contactless grown region, was quite high. The HRTXD results are in line with the SWBXT findings. The comparison between the HRTXD on a chemical-mechanically polished and a cleaved surface seems to indicate that polishing damage can obscure the true microstructure in the as-grown ZnSe crystals.

Su, Ching-Hua↗

NASA NTRS2000

Optical Characterization of Bulk ZnSeTe Solid Solutions

Optical characterization was performed on wafers sliced from crystals of ZnSe, ZnTe and ZnSe (sub 1-x) Te (sub x) (0 less than x less than 0.4) grown by physical vapor transport technique. The energy band gaps at room temperature were determined from optical transmission measurements on 11 wafers. The best fit to the band gap vs. composition, x, data gives a bowing parameter of 1.336 which is between the value of 1.23 determined previously on ZnSeTe bulk crystals by reflectivity and the value of 1.621 reported on epilayers by photoconductivity. Low-temperature photoluminescence (PL) spectra were measured on 6 samples. The spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for each of the ZnSe (sub 1-x) Te (sub x) samples, 0.09 less than x less than 0.39. For x = 0.09, this emission energy is about 0.2eV lower than the band gap energy measured at low temperature. As x increases the energy discrepancy gradually decreases and reduces to almost zero at x = 0.4. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted to be associated with the exciton bound to Te clusters because of the high Te content in these samples.

Su, Ching-Hua↗

NASA NTRS2002

Photoluminescence of CdTe Crystals Grown by Contactless PVT Method

High quality CdTe crystals with resistivities higher than 10(exp 8) Omega cm were grown by the 'contactless' PVT (physical vapor transport) technique. Group III elements In and Al, and the transition metal Sc were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. It was found that the emission peaks at 1.584 eV and 1.581 eV exist only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/indium complex. The intensity of the broadband centered at 1.43 eV decreases dramatically with introduction of Sc.

Palosz, W.↗

NASA NTRS2002

Photoluminescence of CdTe Crystals Grown by Physical Vapor Transport

High quality CdTe crystals with resistivities higher than 10(exp 8) omega cm were grown by the physical vapor transport technique. Indium, Aluminum, and the transition metal Scandium were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. The emission peaks at 1.584 eV and 1.581 eV were found only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/indium complex. The intensity of the broadband centered at 1.43 eV decreases strongly with introduction of Sc.

Curreri, Peter A.↗

NASA NTRS2002

Photoluminescence of CdTe Crystals Grown by Physical Vapor Transport

Palosz, W.↗

NASA NTRS2003

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions.

Su, Ching-Hua↗

NASA NTRS2003

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyancy-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions. Significant effects of gravity vector orientation on the growth crystal morphology and point defect distribution were observed.

Source record↗

NASA NTRS1964

Monte Carlo techniques for solving transport problems

The Monte Carlo procedure is a model sampling technique. A model is established, and the behavior of sample units in this model is followed. A sufficient number of sample units are followed to obtain a statistical average or macroscopic quantities, which are the quantities of interest. This technique was used in crude form by Fermi in connection with the building of the first atomic pile. Later, Von Neumann and Ulam developed and used the Monte Carlo procedure extensively in developing the atomic bomb. Since then this technique has gained considerable use in nuclear reactor problems (refs. 1 and 2), and we at the Lewis Research Center have been extending it to thermal radiation (refs. 3 and 4), rarefied gas flows, and plasma flow problems (ref. 5). This technique, which requires a large number of sample histories to obtain solutions with small variances, is receiving greater use because of the development of the high-speed electronic computers.

SAMPLED DATA SYSTEM↗

NASA NTRS1978

Photoelectrons in the upper atmosphere - A formulation incorporating effects of transport

A technique for solving the problem of photoelectron spatial transport and spectral degradation is presented. The developed model, which allows for a relatively complete description of the relevant transport and collisional physics, can be applied to study processes at either low or high altitude, and may be used to investigate interhemispheric transport. The technique involves dividing the spatial dimension into a set of discrete ordinates and calculating the photoelectron intensity for a specific energy at each point in space and at a set of angle points. The selected range of the energy spectrum was covered completely by a set of energy bins, and the photoelectron intensity in the highest energy bin was calculated first by assuming that the only source term was derived from photoionization. The method is similar to a method used in radiative transfer theory. Spatial and angular redistribution of electrons play a dominant role at heights above 400 km.

Prather, M. J.↗

NASA NTRS1990

Update transport - A new technique for update synchronization in replicated database systems

A fully distributed approach to update synchronization is presented where each site completely executes every update. This approach has several features-higher resiliency to different kinds of failures, higher parallelism, improved response to user requests, and low communication overhead. A fully distributed algorithm for concurrency control obtained by rehashing a previously published semidistributed algorithm into the fully distributed model of update execution is presented. A performance model of replicated database systems is presented and used to study the performance of the proposed algorithm and its semidistributed version. The results of the performance study reveal that the proposed approach can substantially improve the performance at the cost of moderate input/output overhead.

Singhal, Mukesh↗