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At least 37 records · Page 2

Ex-Situ Recrystallization of CIGS via Metal Halides

Post Deposition Treatments (PDT) have been key to improving the efficiency of CIGS solar cells. While efficiency has continued to increase, for thermal evaporation processes, high substrate temperature and low deposition rates are a necessity. For many chemical processes, chemical vapor transport techniques can be used to both purify and grow both large and pure crystalline compounds. This is often done with a halide species and temperature. Here, by using the substituent metals of CIGS in confluence with a halide, we explored the possibility to grow a CIGS layer at low temperature and fast rate while still having sufficiently high efficiency.

14 SOLAR ENERGY↗

Development of Innovative Measurement Techniques for Fission Product Transport Quantification

This document provides the progress of a research project at Texas A&M University (TAMU), led by Idaho National Laboratory (INL), in support of the Versatile Test Reactor (VTR) program and work scope area of gas-cooled fast reactors. The VTR TAMU INL project started in October 2018. The document includes the main objectives of the project, scaling analysis applied to the experimental facilities, experimental methodology including instrumentation and techniques applied, and up-to-date results from the experimental and numerical studies.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗

Analytic techniques for solving the transport equations in electroweak baryogenesis

We develop an efficient method for solving transport equations, particularly in the context of electroweak baryogenesis. It provides fully-analytical results under mild approximations and can also test semi-analytical results, which are applicable in more general cases. Key elements of our method include the reduction of the second-order differential equations to first order, representing the set of coupled equations as a block matrix of the particle densities and their derivatives, identification of zero modes, and block decomposition of the matrix. We apply our method to calculate the baryon asymmetry of the Universe (BAU) in a Standard Model effective field theory framework of complex Yukawa couplings to determine the sensitivity of the resulting BAU to modifications of various model parameters and rates, and to estimate the effect of the commonly-used thin-wall approximation.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Substrate-Dependent Band Structures in Trilayer Graphene / h - BN Heterostructures

The tight-binding model has been spectacularly successful in elucidating the electronic and optical properties of a vast number of materials. Within the tight-binding model, the hopping parameters that determine much of the band structure are often taken as constants. Here, using ABA-stacked trilayer graphene as the model system, we show that, contrary to conventional wisdom, the hopping parameters and therefore band structures are not constants, but are systematically variable depending on their relative alignment angle between h-BN. Moreover, the addition or removal of the h-BN substrate results in an inversion of the K and K' valley in trilayer graphene’s lowest Landau level. Our work illustrates the oft-ignored and rather surprising impact of the substrates on band structures of 2D materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering

Understanding mechanisms influencing electrical transport in material systems not only provides a scientific explanation for observed behavior but also offers insight into ways to enhance transport in devices. This study reports experimental hole mobility of 8 x 10 4 cm 2 V -1 s -1 in a Ge 0.92 Sn 0.08 , the highest recorded mobility for the GeSn system. A study of the material's quality is presented using structural and electrical characterization techniques, with transport data being supported by simulations using an extensive modeling framework. Quantum Hall measurements further indicate the material's high quality and potential spintronic applications, with extracted values of 0.0689$m$ 0 and 13.6 for the effective mass and effective g‐factor, respectively. It is observed that transport is limited by alloy disorder scattering at cryogenic temperatures. A comparative study between the presented structure and similar quantum well heterostructures revealed that the difference in hole mobilities is captured by a disparity in the reduced nominal alloy disorder scattering potential (Δ U alloy = 0.8 eV), that is lower than the value of a fully random alloy (Δ U alloy = 1.4–1.7 eV) potential. The difference in Δ U alloy suggests that heterostructures with similar geometries and alloy compositions can have different alloy disorder scattering, implying that an underlying mechanism, such as short‐range order, may be responsible and warrants further investigation.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

A practical guide for crystal growth of van der Waals layered materials

This Tutorial provides an overview of the techniques that are most commonly utilized to grow bulk van der Waals crystals. The materials discussed were selected to highlight various challenges that are often encountered during crystal growth. Additionally, in relatively equal parts, the text covers melt-based techniques, vapor transport growths, and the characterization of crystal quality with an emphasis on structural and chemical homogeneities. Furthermore, pertinent details are given regarding the growth and characterization of many specific compounds, with examples mostly drawn from our own research, and an effort is made to highlight cases where the growths offer a particular lesson or the conditions have a significant impact on the crystal’s physical properties. A primary goal is to motivate more researchers to grow crystals by providing general descriptions and considerations for different growth techniques and equipment while sharing some of our own lessons learned and best practices for the growth and characterization of layered van der Waals crystals. The Tutorial is not written solely for aspiring crystal growers, however, because any researcher who collaborates with a crystal grower can benefit from having a greater understanding and appreciation of the processes of crystal growth and materials development.

36 MATERIALS SCIENCE↗

Exact results for nonlinear Drude weights in the spin-1/2 XXZ chain

Nonlinear Drude weight (NLDW) is a generalization of the linear Drude weight, which characterizes the nonlinear transport in quantum many-body systems. We investigate these weights for the spin-1/2 XXZ chain in the critical regime. The effects of the Dzyaloshinskii-Moriya interaction and an external magnetic field are also studied. Solving the Bethe equations numerically, we obtain these weights for very large system sizes and identify parameter regimes where the weights diverge in the thermodynamic limit. These divergences appear in all the orders studied in this Letter and can be regarded as a generic feature of the NLDWs. We study the origin of these divergences and reveal that they result from nonanalytic finite-size corrections to the ground-state energy. As a result, we compute closed-form expressions for several weights in the thermodynamic limit and find excellent agreement with the numerical results.

1-dimensional systems↗

Indirect tunneling enabled spontaneous time-reversal symmetry breaking and Josephson diode effect in TiN/Al 2 ⁢O 3 /Hf 0.8 ⁢Zr 0.2 ⁢O 2 /Nb tunnel junctions

Josephson diode (JD) effect in Josephson tunnel junctions (JTJs) has attracted a great deal of attention due to its importance for developing superconducting-circuitry-based quantum technologies. Even though the preparation of high-quality JTJs by techniques employed in the semiconductor industry has been demonstrated, which was an important milestone because JTJs are the building blocks of superconducting electronics even before the quantum era, the JD effect has not been accomplished in them, nor has the highly desirable electrical control of the effect. We report here the fabrication of JTJs featuring a composite tunnel barrier of Al 2 ⁢O 3 and Hf 0.8 ⁢Zr 0.2 ⁢O 2 using complementary-metal-oxide-semiconductor compatible atomic layer deposition. These JTJs were found to show the JD effect in nominally zero magnetic fields with nonreciprocity controllable via an electric training current, yielding a surprisingly large diode efficiency. The quasiparticle tunneling, through which the Josephson coupling in a JTJ is established, was found to show theoretically expected gap features but no nonreciprocity. We attribute these observations to the simultaneous presence of positive and negative local Josephson couplings in the JTJs, with the negative Josephson coupling originating from indirect tunneling, which results in spontaneous time-reversal symmetry breaking. Finally, the double-minima washboard potential for the ensemble-averaged phase difference in the resistively and capacitively shunted junction model is shown to fully account for the experimentally observed JD effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Angle-Resolved Polarized Raman Study of Layered Cr 2 Se 3

The polarization-resolved Raman spectra of two-dimensional Cr 2 Se 3 synthesized via chemical vapor deposition (CVD) and chemical vapor transport (CVT) techniques were investigated in detail. The samples were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM), and energy-dispersive X-ray spectroscopy (EDS). A distinct polarization dependence was observed in the Raman intensity of all the Cr-Cr, Cr-Se, and Se-Se modes in both samples. The observed angle-dependent Raman intensities of each peak could be related to the crystal structure-specific Raman tensor. XRD results of the bulk Cr 2 Se 3 sample synthesized via CVT confirm its trigonal crystal structure, and the Raman peaks can be fitted using the Raman tensors for the A g and E g modes for both the parallel and crossed polarizations. However, for the Cr 2 Se 3 samples directly grown on Si/SiO 2 substrates by CVD, it was necessary to assume the triclinic crystal structure in order to explain the polarized Raman dependence of all the peaks in both parallel and crossed polarization directions. Furthermore, this is the first experimental result suggesting the existence of triclinic Cr 2 Se 3 crystal structure, which has been theoretically predicted in the Materials Project database.

36 MATERIALS SCIENCE↗

Geant4Reweight: a framework for evaluating and propagating hadronic interaction uncertainties in Geant4

Geant4Reweight is an open-source C++ framework that allows users to weight tracks produced by the Geant4 particle transport Monte Carlo simulation according to hadron interaction cross section variations and estimate uncertainties in Geant4 interaction models by comparing the simulation’s hadron interaction cross section predictions to data. The ability to weight hadron transport as simulated by Geant4 is crucial to the propagation of systematic uncertainties related to secondary hadronic interactions in current and upcoming neutrino oscillation experiments, including MicroBooNE, NOvA, and DUNE, aswell as hadron test beam experiments such as ProtoDUNE. Here, we provide motivation for weighting hadron tracks in Geant4 in the context of systematic uncertainty propagation, a description of Geant4’s transport simulation technique, and a description of our weighting technique and fitting framework in the momentum range 0–10 GeV/c, which is typical for the hadrons produced by neutrino interactions in these experiments.

97 MATHEMATICS AND COMPUTING↗

Gate-tunable enhancement of supercurrent in hybrid planar Josephson junctions

Planar Josephson junctions (JJs) have emerged as a promising platform for the realization of topological superconductivity and Majorana zero modes. To obtain robust quasi one-dimensional (1D) topological superconducting states using planar JJs, limiting the number of 1D Andreev bound states’ subbands that can be present, and increasing the size of the topological superconducting gap are two fundamental challenges. It has been suggested that both problems can be addressed by properly designing the interfaces between the JJ’s normal region and the superconducting leads. We fabricated Josephson junctions with periodic hole structures on the superconducting contact leads on InAs heterostructures with epitaxial superconducting Al. By depleting the chemical potential inside the holes region with a top gate, we observed an enhancement of the supercurrent across the junction. The theoretical analysis shows that the enhancement of the JJ’s critical current is achieved when the depletion of the holes is such to optimize the matching of quasiparticles’ wave function at the normal/superconductor interface. Furthermore, these results show how the combination of carefully designed patterns for the Al coverage, and external gates, can be successfully used to tune the density and wave functions’ profiles in the normal region of the JJ, and therefore open an avenue to tune some of the critical properties, such as number of subbands and size of the topological gap, that must be optimized to obtain robust quasi-1D superconducting states supporting Majorana bound states.

Bogoliubov-de Gennes equations↗

Nernst power factor and figure of merit in the compensated semimetal ScSb

Recently, topological semimetals have emerged as strong candidates for solid-state thermomagnetic refrigerators due to their enhanced Nernst effect. This enhancement arises from the combined contributions of the Berry-curvature-induced anomalous Nernst coefficient associated with topological bands and the normal Nernst effect resulting from synergistic electron-hole compensation. Generally, these two effects are intertwined in topological semimetals, making it challenging to evaluate them independently. Here, we report the observation of a high Nernst effect in the electron-hole compensated semimetal ScSb with topologically trivial electronic band structures. Remarkably, we find a high maximum Nernst power factor of 𝑃⁢𝐹 𝑁 ∼ 35 × 10 −4 W m −1 K −2 in ScSb. The Nernst thermopower (𝑆 𝑥⁢𝑦 ) exhibits a peak of ∼ 47 µ⁢V/K at 12 K and 14 T, yielding a Nernst figure of merit (𝑧 𝑁 ) of ∼ 28 × 10 −4 K −1 . Notably, despite its trivial electronic band structure, both the 𝑃⁢𝐹 𝑁 and 𝑧 𝑁 values of ScSb are comparable to those observed in topological semimetals with Dirac band dispersions. In conclusion, the origin of the large Nernst signal in ScSb is explained by compensated electron and hole carriers, through Hall resistivity measurements, angle-resolved photoemission spectroscopy, and density functional theory calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Refining the two-band model for highly compensated semimetals using thermoelectric coefficients

In studying compensated semimetals, the two-band model has proven extremely useful in capturing electrical conductivity under magnetic field, as a function of density and mobility of electronlike and holelike carriers. However, it rarely offers practical insight into magnetothermoelectric properties. Here, in this work, we report the field dependence of thermoelectric (TE) coefficients in a highly compensated semimetal NbSb 2 , where we find the Seebeck (𝑆 𝑥⁢𝑥 ) and Nernst (𝑆 𝑥⁢𝑦 ) coefficients increase quadratically and linearly with applied magnetic field, respectively. Such field dependence was predicted in previous work that studied a system of two parabolic bands, within semiclassical Boltzmann transport theory when the following two conditions are simultaneously met: 𝜔 𝑐 ⁢𝜏 ≫ 1 and tan ⁡𝜃 𝐻 ≪ 1, where 𝜔 𝑐 and 𝜏 refer to the cyclotron frequency and relaxation time, respectively, and 𝜃 𝐻 is the Hall angle. Under these conditions, we find the field dependence of the TE coefficients directly provides a relation between the electronlike (𝑛 𝑒 ) and holelike (𝑛 ℎ ) carrier densities, which in turn can be used to refine two-band model fitting. With this, we find the compensation factor ($\frac{|Δ⁢𝑛|}{𝑛_{𝑒}}$, where Δ⁢𝑛 = 𝑛 𝑒 −𝑛 ℎ ) of NbSb 2 is two orders of magnitude smaller than what was found in unrestricted fitting, resulting in a larger saturation-field scale for magnetoresistance. Within the same framework of the semiclassical theory, we also deduce that the thermoelectric Hall angle tan⁡ 𝜃 𝛾 = $\frac{𝑆_{𝑥⁢𝑦}}{𝑆_{𝑥⁢𝑥}}$ can be expressed as ($\frac{Δ⁢𝑛}{𝑛_{𝑒}}$ ×𝜔 𝑐 ⁢𝜏) −1 , which serves as a parameter to predict the degree of compensation. Our findings offer crucial insights into identifying empirical conditions for field-induced enhancement of TE performance and into engineering-efficient thermoelectric devices based on semimetallic materials.

electrical conductivity↗

Hetero-Orbital Two-Component Fractional Quantum Hall States in Bilayer Graphene

A two-dimensional electron system exposed to a strong magnetic field produces a plethora of strongly interacting fractional quantum Hall (FQH) states, the complex topological orders of which are revealed through exotic emergent particles, such as composite fermions, and fractionally charged Abelian and non-Abelian anyons. Much insight has been gained by the study of multicomponent FQH states, where spin and pseudospin indices of the electron contribute additional correlation. Traditional multicomponent FQH states develop in situations where the components share the same orbital states and the resulting interactions are pseudospin independent; this homo-orbital nature is also crucial to their theoretical understanding. Here, we study “hetero-orbital” two-component FQH states, in which the orbital index is part of the pseudospin, rendering the multicomponent interactions strongly SU(2) anisotropic in the pseudospin space. Such states, obtained in bilayer graphene at the isospin transition between 𝑁 = 0 and 𝑁 = 1 electron Landau levels, are markedly different from previous homo-orbital two-component FQH states. In particular, we observe strikingly different behaviors for the parallel-vortex and reverse-vortex attachment composite fermion states, and an anomalously strong two-component 2/5 state over a wide range of magnetic field before it abruptly disappears at a high field. Our findings, combined with detailed theoretical calculations, reveal the surprising robustness of the hetero-orbital FQH effects, significantly enriching our understanding of FQH physics in this novel regime.

Bilayer graphene↗

Competition between magnetic order and charge localization in Na 2 IrO 3 thin crystal devices thin crystal devices

Spin orbit assisted Mott insulators such as sodium iridate (Na 2 IrO 3 ) have been an important subject of study in recent years. In these materials, the interplay of electronic correlations, spin-orbit coupling, crystal field effects, and a honeycomb arrangement of ions bring exciting ground states, predicted in the frame of the Kitaev model. The insulating character of Na 2 IrO 3 has hampered its integration to an electronic device, desirable for applications, such as the manipulation of quasiparticles interesting for topological quantum computing. Here we show through electronic transport measurements supported by angle-resolved photoemission spectroscopy (ARPES) experiments, that electronic transport in Na 2 IrO 3 is ruled by variable range hopping and it is strongly dependent on the magnetic ordering transition known for bulk Na 2 IrO 3 , as well as on external electric fields. Furthermore, electronic transport measurements allow us to deduce a value for the localization length and the density of states in our Na 2 IrO 3 thin crystal devices, and offer an alternative approach to study insulating 2D-materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Strange metal behavior of the Hall angle in twisted bilayer graphene

Twisted bilayer graphene (TBG) with interlayer twist angles near the magic angle ≈ 1.08° hosts flat bands and exhibits correlated states including Mott-like insulators, superconductivity, and magnetism. Additionally, a linear-in-temperature normal state resistivity in TBG has been attributed to an exotic Planckian dissipation mechanism but can be equally well explained in terms of conventional electron-phonon scattering. To address this issue, we perform combined temperature-dependent transport measurements of both the longitudinal and Hall resistivities in near-magic-angle TBG. While the observed longitudinal resistivity follows linear temperature T dependence consistent with previous reports, the Hall resistance shows an anomalous T dependence with the cotangent of the Hall angle cot Θ H ∝T 2 . Boltzmann theory for quasiparticle transport predicts that both the resistivity and cot Θ H should have the same T dependence, contradicting the observed behavior. This failure of quasiparticle-based theories is reminiscent of other correlated strange metals such as cuprates.

36 MATERIALS SCIENCE↗