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Trapping Electrons in a Room-Temperature Microwave Paul Trap
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Development of a Trapped Yb+ Frequency Standard: Efficient Quenching of Population Trapping
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Electric Field Noise in Microfabricated Ion Traps with Varied Capacitor Types and Trap Materials.
Abstract not provided.
Measurement of the Length of an Optical Trap
NASA Glenn has been involved in developing optical trapping and optical micromanipulation techniques in order to develop a tool that can be used to probe, characterize, and assemble nano and microscale materials to create microscale sensors for harsh flight environments. In order to be able to assemble a sensor or probe candidate sensor material, it is useful to know how far an optical trap can reach; that is, the distance beyond/below the stable trapping point through which an object will be drawn into the optical trap. Typically, to measure the distance over which an optical trap would influence matter in a horizontal (perpendicular to beam propagation) direction, it was common to hold an object in one optical trap, place a second optical trap a known distance away, turn off the first optical trap, and note if the object was moved into the second trap when it was turned on. The disadvantage of this technique is that it only gives information of trap influence distance in horizontal (x y) directions. No information about the distance of the influence of the trap is gained in the direction of propagation of the beam (the z direction). A method was developed to use a time-of-flight technique to determine the length along the propagation direction of an optical trap beam over which an object may be drawn into the optical trap. Test objects (polystyrene microspheres) were held in an optical trap in a water-filled sample chamber and raised to a pre-determined position near the top of the sample chamber. Next, the test objects were released by blocking the optical trap beam. The test objects were allowed to fall through the water for predetermined periods of time, at the end of which the trapping beam was unblocked. It was noted whether or not the test object returned to the optical trap or continued to fall. This determination of the length of an optical trap's influence by this manner assumes that the test object falls through the water in the sample chamber at terminal velocity for the duration of its fall, so that the distance of trap influence can be computed simply by: d = VTt, where d is the trap length (or distance of trap reach), VT is the terminal velocity of the test object, and t is the time interval over which the object is allowed to fall.
Evaluation of common trap types for capturing wild pigs
Abstract Wild pigs ( Sus scrofa ) are one of the most ecologically harmful invasive vertebrates globally. Due to their negative impacts, wild pig populations are managed via trapping, yet studies investigating various trap designs have been limited in duration, location, and number of trappers. Using data from professional trappers across the southeastern U.S., we evaluated the performance of 3 wild pig trap types (corral, drop, passive net), and the effect of forage season (barren, green‐up, masting) on trapping success. Specifically, we compared trap effectiveness (estimated proportion of targeted wild pigs caught per capture event), trap night effort (number of days to first catch), and the amount of bait and time used per individual take over the lifetime of each trap location across the 3 trap types and forage seasons. Across >850 capture events by 31 trappers, all 3 trap types evaluated were effective at capturing entire social groups of wild pigs. Few differences were observed among trap types, although drop traps in masting season captured a greater estimated proportion of wild pigs per capture event compared to other trap type‐season combinations. Our data also revealed that passive net traps required slightly more bait/wild pig captured than drop traps but there was no difference in the time/wild pig captured among traps. Our findings demonstrate that when operated by wildlife professionals, multiple designs of wild pig traps can be effective at removing targeted groups of wild pigs. Further, our results offer insights regarding the performance of wild pig trap types across seasons that can be used to inform wild pig trapping programs.
Impact of K-Optimization on Trap Concentration in (Ag,Cu)(In,Ga)Se 2 Solar Cells
Recent progress has been made in improving efficiency in Cu(In,Ga)Se 2 (CIGS) absorbers with steady increases in peak efficiency. One way this has been achieved is by adding Ag to CIGS (ACIGS) to achieve higher V OC . However, these efficiencies are still well below the Shockley-Queisser efficiency limit, and traps acting as recombination centers and compensating centers are one thing limiting the solar efficiency. Past research in CIGS has shown that alkali treatment can improve the efficiency and metastability problems in CIGS, but less is understood about the role of alkali treatments in ACIGS. Here, we investigate the impact of potassium in ACIGS through its impact on trap incorporation and minority carrier lifetime. The samples in this study were grown in a roll-to-roll coater with Mo, ACIGS, CdS, and ZnO structure. Both cells were grown identically except the second (K-optimized) cell was grown with increased K-doping of the Mo contact and was more Cu-poor near the surface to optimize the K profile. This resulted in an efficiency increase from 16.8% to 18.7% for the K-optimized cell, which was mostly due to a 65 mV V OC increase. The doping profile showed a 2X increase in acceptor concentration of the K-optimized cell (2.5×10 15 cm -3 ) which suggests that the K was better incorporated into the ACIGS after these optimizations. To characterize the traps in these cells, deep level transient and optical spectroscopy were used. The DLOS measurements showed an EV+0.98 eV trap whose concentration was reduced 10X in the K-optimized cell (4×10 14 cm -3 ). This is consistent with previous results from the alkali treatment in CIGS, which also showed a decrease in near-conduction band trap concentration [1], but the reduction was larger than previous studies possibly indicating the combination of K and Cu-poor surface may both have aided in reducing the EV+0.98 eV trap concentration. The other primary trap is the mid-gap trap (EV+0.58 eV), which was quantified using DLTS. Its concentration decreased from 9×10 13 cm -3 to 4×10 13 cm -3 in the K-optimized sample, which is a 2X reduction. Previous studies have shown this trap is likely an efficient recombination center [2], which makes sense because it is near mid-gap. This trap has also been associated with V OC instability and reduction, so reducing this trap concentration is essential to achieve high V OC and cell efficiency. To help confirm this association, time-resolved photoluminescence measurements have shown in this sample set and a previous study that the minority carrier lifetime (19 ns baseline to 56 ns K-optimized) and this EV+0.56 eV trap concentration are inversely proportional, which would be expected for a recombination-limited carrier lifetime. The K optimization of ACIGS results in significantly improved cell efficiency and reduced trap concentrations that correlate with the improved material and electrical properties. We will report on this and the impact of the K optimization on the cell metastability.
Ion Traps and Packaging for Heterogenous Integration - Chimera
Microfabricated surface ion traps and silicon-based photonics are critical technologies for scaling quantum systems. Current ion trap architectures face scalability and integration challenges due to limitations in optical access, fabrication techniques, and material compatibility. State-of-the-art quantum computers and atomic clocks are investigating monolithic integration, which necessitates custom traps for each ion species and has not overcome the integration hurdles presented by merging these technologies. The Chimera (Ion Traps and Packaging for Heterogeneous Integration) project proposes a novel approach utilizing heterogeneous integration (HI) of ion traps and photonic circuits. This separation of components allows for flexibility in ion trap design and reduces fabrication compromises. The Chimera project specifically designed an ion trap to interface vertically with a separately fabricated waveguide chip and demonstrates the first steps to integrating them at the packaging level. The ion trap features a large area of removed silicon, allowing the photonics chip outputs closer to the ion trap, improving alignment and packaging processes. The alignment must be accurate to < 1 µm to ensure that the light from the waveguide can overlap with the trapping region. This fine alignment must also be maintained through an ultra-high vacuum bake, a critical step in preparing an ion trap experiment. By combining separate chips, we demonstrate a new path for scaling trapped ion technology that is less reliant on monolithic integration. We successfully fabricated a trap with a large area of oxide removed, resulting in a region thinned to about 40 µm, a key milestone toward successful integration.
Operational Parameters, Considerations, and Design Decisions for Resource-Constrained Ion Trap Mass Spectrometers
Mass spectrometers are increasingly finding applications in new and unique areas, often in situations where key operational resources (i.e. power, weight and size) are limited. One such example is the Mars Organic Molecule Analyzer (MOMA). This instrument is a joint venture between NASA and the European Space Agency (ESA) to develop an ion trap mass spectrometer for chemical analysis on Mars. The constraints on such an instrument are significant as are the performance requirements. While the ideal operating parameters for an ion trap are generally well characterized, methods to maintain analytical performance with limited power and system weight need to be investigated and tested. Methods Experiments have been performed on two custom ion trap mass spectrometers developed as prototypes for the MOMA instrument. This hardware consists of quadrupole ion trap electrodes that are 70% the size of common commercial instrumentation. The trapping RF voltage is created with a custom tank circuit that can be tuned over a range of RF frequencies and is driven using laboratory supplies and amplifiers. The entire instrument is controlled with custom Lab VIEW software that allows a high degree of flexibility in the definition of the scan function defining the ion trap experiment. Ions are typically generated via an internal electron ionization source, however, a laser desorption source is also in development for analysis of larger intact molecules. Preliminary Data The main goals in this work have been to reduce the power required to generate the radio frequency trapping field used in an ion trap mass spectrometer. Generally minimizing the power will also reduce the volume and mass of the electronics to support the instrument. In order to achieve optimum performance, commercial instruments typically utilize RF frequencies in the 1 MHz range. Without much concern for power usage, they simply generate the voltage required to access the mass range of interest. In order to reduce the required RF voltage (and power), operation of the ion trap at lower RF frequencies has been investigated. Surprisingly, the performance of the instrument has only been slightly degraded at RF frequencies all the way down to 500 kHz. Mass resolution is relatively stable to this point and depending on the resonant ejection point used, the peak intensity is also quite stable. To date only masses up to m/z 200 have been fully investigated, however, additional studies are planned to verify the performance with higher mass ions. The lower frequency and voltage should reduce the pseudo potential well depth, eventually affecting the trapping efficiency of the instrument -- effect that could manifest itself in significantly limiting the mass range of trapped ions. Other methods to reduce the RF power while maintaining analytical performance are also under investigation. This includes ion ejection at lower q(sub z) values to access a given mass with a lower RF voltage. The loss of mass resolution at lower q(sub eject) points has been measured and current work is underway to leverage scan speed and the use of non-linear resonances in order to counter this trend. The overall trap performance under this range of operating conditions will be presented with a goal of identifying what trade-offs are acceptable.
Bilayer Ion Trap Design for 2D Arrays
Junctions are fundamental elements that support qubit locomotion in two-dimensional ion trap arrays and enhance connectivity in emerging trapped-ion quantum computers. In surface ion traps they have typically been implemented by shaping radio frequency (RF) electrodes in a single plane to minimize the disturbance to the pseudopotential. However, this method introduces issues related to RF lead routing that can increase power dissipation and the likelihood of voltage breakdown. Here, we propose and simulate a novel two-layer junction design incorporating two perpendicularly rotoreflected (rotated, then reflected) linear ion traps. The traps are vertically separated, and create a trapping potential between their respective planes. The orthogonal orientation of the RF electrodes of each trap relative to the other provides perpendicular axes of confinement that can be used to realize transport in two dimensions. While this design introduces manufacturing and operating challenges, as now two separate structures have to be precisely positioned relative to each other in the vertical direction and optical access from the top is obscured, it obviates the need to route RF leads below the top surface of the trap and eliminates the pseudopotential bumps that occur in typical junctions. Here in this paper the stability of idealized ion transfer in the new configuration is demonstrated, both by solving the Mathieu equation analytically to identify the stable regions and by numerically modeling ion dynamics. Our novel junction layout has the potential to enhance the flexibility of microfabricated ion trap control to enable large-scale trapped-ion quantum computing.
In-situ observation of trapped carriers in organic metal halide perovskite films with ultra-fast temporal and ultra-high energetic resolutions
Abstract We in-situ observe the ultrafast dynamics of trapped carriers in organic methyl ammonium lead halide perovskite thin films by ultrafast photocurrent spectroscopy with a sub-25 picosecond time resolution. Upon ultrafast laser excitation, trapped carriers follow a phonon assisted tunneling mechanism and a hopping transport mechanism along ultra-shallow to shallow trap states ranging from 1.72–11.51 millielectronvolts and is demonstrated by time-dependent and independent activation energies. Using temperature as an energetic ruler, we map trap states with ultra-high energy resolution down to < 0.01 millielectronvolt. In addition to carrier mobility of ~4 cm 2 V −1 s −1 and lifetime of ~1 nanosecond, we validate the above transport mechanisms by highlighting trap state dynamics, including trapping rates, de-trapping rates and trap properties, such as trap density, trap levels, and capture-cross sections. In this work we establish a foundation for trap dynamics in high defect-tolerant perovskites with ultra-fast temporal and ultra-high energetic resolution.
3D-printed micro ion trap technology for quantum information applications
Trapped-ion applications, such as in quantum information processing1, precision measurements, optical clocks and mass spectrometry, rely on specialized high-performance ion traps. The last three of these applications typically use traditional machining to customize macroscopic 3D Paul traps, whereas quantum information processing experiments usually rely on photolithographic techniques to miniaturize the traps and meet scalability requirements. Using photolithography, however, it is challenging to fabricate the complex 3D electrode structures required for optimal confinement. Here, in this work, we demonstrate a high-resolution 3D printing technology based on two-photon polymerization (2PP) that is capable of fabricating large arrays of high-performance miniaturized 3D traps. We show that 3D-printed ion traps combine the advantages, such as strong radial confinement, of traditionally machined 3D traps with on-chip miniaturization. We trap calcium ions in 3D-printed ion traps with radial trap frequencies ranging from 2 MHz to 24 MHz. The tight confinement eases ion cooling requirements and allows us to implement high-quality Rabi oscillations with Doppler cooling only. Also, we demonstrate a two-qubit gate with a Bell-state fidelity of 0.978 ± 0.012. With 3D printing technology, the design freedom is greatly expanded without sacrificing scalability and precision, so that ion trap geometries can be optimized for higher performance and better functionality.
Inhomogeneous electric field effects in a linear RF quadruple trap
The exact potential corresponding to confining fields inside a linear rf quadrupole particle trap of finite length is presented. The analytic expressions for the trapping potential is derived by introducing a linear trap employing a relatively simple cylindrical geometry and solving Laplace's equation for the trap electrodes. The finite length of linear traps results in field distortion near the trap ends. An exact analytic determination of the fields is useful because the profile of the trapped ion cloud is highly dependent on the fields confining it. It is shown that near the ends of the trap, the effective potential arising from the rf fields acts to propel particles out of the trap, and further, that the addition of a dc bias generates an inhomogeneous in the trap that influences the particles both perpendicularly to and along the trap's long axis.
Comparison of spontaneous emission in trapped-ion multiqubit gates at high magnetic fields
Penning traps have been used for performing quantum simulations and sensing with hundreds of ions and provide a promising route toward scaling up trapped ion quantum platforms because of the ability to trap and control hundreds or thousands of ions in two- and three-dimensional crystals. In both Penning traps and the more common RF Paul traps, lasers are often used to drive multi-qubit entangling operations. A leading source of decoherence in these operations is off resonant spontaneous emission. While many trapped ion quantum computers or simulators utilize clock qubits, other systems, especially those with high magnetic fields such as Penning traps, rely on Zeeman qubits, which require a more complex calculation of this decoherence. We therefore examine theoretically the impacts of spontaneous emission on quantum gates performed with trapped-ion ground state Zeeman qubits in a high magnetic field. In particular, we consider two types of gates—light-shift ($\hat{σ}^z_i$ $\hat{σ}^z_j$) gates and Mølmer-Sørensen ($\hat{σ}^x_i$ $\hat{σ}^x_j$) gates—obtained with laser beams directed approximately perpendicular to the magnetic field (the quantization axis) and compare the decoherence errors in each. Within each gate type, we also compare different operating points with regards to the detunings, polarizations, and required intensity of the laser beams used to drive the gates. Here, we show that both gates can have similar performance at their optimal operating conditions at high magnetic fields and examine the experimental feasibility of various operating points. By examining the magnetic field dependence of each gate, we demonstrate that, when the P state fine structure splitting is large compared to the Zeeman splittings, the theoretical performance of the Mølmer-Sørensen gate is significantly better than that of the light-shift gate. Additionally, for the light-shift gate, we make an approximate comparison between the fidelities that can be achieved at high fields with the fidelities of state-of-the-art two-qubit trapped ion quantum gates. We show that, with regards to spontaneous emission, the achievable fidelity of the current NIST configuration is about an order of magnitude below that of the best low-field gates, but we also discuss several alternative configurations with potential error rates that are comparable with those for state-of-the art trapped ion gates.
Progress Report for W911NF-23-1-0323: Development of Scalable Three-Dimensional Ion Traps for Quantum Information Processing
Trapped atomic ions are a promising platform for scalable quantum information processing. They lead in many key metrics such as single and two qubit gate fidelities, as well as quantum volume. We recently realized novel 3D ion traps with a high resolution 3D-printing process. The traps combine the scalability potential of surface chip traps with the superior trap performance of macroscopic 3D ion traps. Like photolithography, 3D-printing is a digitally defined process and hence allows for rapid iteration between design and fabrication. In contrast to photolithography, it also allows for fully defined 3D structures and, thus, is an ideal process to develop large, well-defined trap arrays with complex 3D electrode structures. Our current goal is to implement key procedures and perform critical measurements that justify incorporation of 3D-printed traps into large-scale quantum computing efforts. En route, we recently realized trapping in horizontal traps that are operating at cryogenic temperatures.
Atomic ion clock with two ion traps, and method to transfer ions
An atomic ion clock with a first ion trap and a second ion trap, where the second ion trap is of higher order than the first ion trap. In one embodiment, ions may be shuttled back and forth from one ion trap to the other by application of voltage ramps to the electrodes in the ion traps, where microwave interrogation takes place when the ions are in the second ion trap, and fluorescence is induced and measured when the ions are in the first ion trap. In one embodiment, the RF voltages applied to the second ion trap to contain the ions are at a higher frequency than that applied to the first ion trap. Other embodiments are described and claimed.
Silicon-On-Sapphire Metasurfaces Generate Arrays of Dark and Bright Traps for Neutral Atoms
We demonstrated crystalline silicon-on-sapphire (c-SOS) metasurfaces that convert a Gaussian beam into arrays of complex optical traps, including arrays of optical bottle beams that trap atoms in dark regions interleaved with bright tweezer arrays. The high refractive index and indirect band gap of crystalline silicon make it possible to design high-resolution near-infrared (λ > 700 nm) metasurfaces that can be manufactured at scale using CMOS-compatible processes. Compared with active components like spatial light modulators (SLMs) that have become widely used to generate trap arrays, metasurfaces provide an indefinitely scalable number of pixels, enabling large arrays of complex traps in a very small form factor, as well as reduced dynamic noise. To design metasurfaces that can generate three-dimensional bottle beams to serve as dark traps, we modified the Gerchberg-Saxton algorithm to enforce complex-amplitude profiles at the focal plane of the metasurface and to optimize the uniformity of the traps across the array. We fabricated and measured c-SOS metasurfaces that convert a Gaussian laser beam into arrays of bright traps, dark traps, and interleaved bright/dark traps.
Development of a Structure for Lossless Ion Manipulations (SLIM) High Charge Capacity Array of Traps
Enhancing the sensitivity of low abundance ions in a complex mixture without sacrificing experiment throughput is highly desirable. This work demonstrates a way to greatly improve the sensitivity of ion mobility (IM) selected ions by accumulating them in an array of high-capacity ion traps located inside a novel structures for lossless ion manipulations ion mobility spectrometer (SLIM-IMS) module. The array of ion traps used in this work consisted of seven independently controllable traps. Each trap was 386 mm long and possessed a charge capacity of ~4.5×10 8 charges, with a linear range extending to ~2.5×10 8 charges. Each ion trap could be used to extract a peak (or ions over a mobility range) from an ion mobility separation based on arrival time. Ions could be stored without losses for long times (>100 s) and then released all at once or one trap at a time. It was possible to accumulate large ion populations by extracting and storing ions over repeated IM separations. We report enrichment of up to seven individual ion distributions could be performed using the seven independently controllable ion traps. Additionally, the ion trapping process effectively compressed ion populations into narrow peaks, which provides a greatly improved basis for subsequent ion manipulations. The array of high charge-capacity ion traps provides a flexible addition to SLIM and a powerful tool for IMS-MS applications requiring high sensitivity.