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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

A Tripler to 220 GHz Using a Back-to-Back Barrier-N-N+ Varactor Diode

The back-to-back barrier-N-N+ (bbBNN) varactor is a nonlinear device being developed for frequency multiplier applications above 100 GHz. Its symmetrical C-V characteristic, low series resistance and suitability to planarization make it ideal choice for high frequency, low power, odd harmonic generation. In this paper, the performance of a 220 GHz tripler using integrated planar bbBNN devices is presented.

frequency multiplier↗
NASA NTRS2006

A 260-340 GHz Dual Chip Frequency Tripler for THz Frequency Multiplier Chains

We designed and fabricated a fix-tuned balanced frequency tripler working in the 260-340 GHz band to be the first stage of a x3x3x3 multiplier chain to 2.7 THz. The design of a dual-chip version of this multiplier featuring an input splitter / output combiner as part of the input / output matching networks of both chips - with no degradation of the expected bandwidth and efficiency- will be presented.

Schottky diodes↗
NASA NTRS2004

Design of a Wideband 6-Anode Frequency Tripler at 300 GHz with Optimum Balance

We report on the design methodology of a fix-tuned split-block waveguide balanced frequency tripler working nominally at 300 GHz. It features six GaAs Schottky planar diodes in a balanced configuration. The circuit will be fabricated with JPL membrane technology in order to minimize dielectric loading and insure an accurate and uniform thickness of the substrate. The multiplier power handling is limited by the breakdown voltage of the diodes that depends on the doping level of the active layer. With six diodes, the current choice for the doping level leads to medium power handling capabilities of about 50 mW. Increasing the number of diodes to eight would be an option but would lead to increased difficulties in design and fabrication.

Schottky diode multipliers↗
NASA NTRS2010

An Integrated 520-600 GHz Sub-Harmonic Mixer and Tripler Combination Based on GaAs MMIC Membrane Planar Schottky Diodes

We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results on the metal block give best DSB mixer noise temperature of 2360 K and conversion losses of 7.7 dB at 520 GHz. Preliminary results on the silicon micro-machined blocks give a DSB mixer noise temperature of 4860 K and conversion losses of 12.16 dB at 540 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer for both packages is between 30 and 50 mW.

Monolithic Microwave Integrated Circuit, (MMIC)↗
NASA NTRS2011

An Integrated 520-600 GHz Sub-Harmonic Mixer and Tripler Combination Based on GaAs MMIC Membrane Planar Schottky Diodes

We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results on the metal block give best DSB mixer noise temperature of 2360 K and conversion losses of 7.7 dB at 520 GHz. Preliminary results on the silicon micro-machined blocks give a DSB mixer noise temperature of 4860 K and conversion losses of 12.16 dB at 540 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer for both packages is between 30 and 50 mW

passively cooled detectors↗
NASA NTRS1993

A Back-To-Back Barrier-N-N+ (bbBNN)Diode Tripler at 200 GHz

This paper describes the performance of planar back-to-back Barrier-N-N+ (bbBNN) devices for mm and submm wave multiplier applications. A technique has been developed for characterizing planar bbBNN devices with Vector Network Analyzer, which gives both the series resistance and voltage dependent capacitance of the device.

Diode Tripler↗
NASA NTRS1988

Monolithic watt-level millimeter-wave diode-grid frequency tripler array

In order to provide watt-level CW output power throughout the millimeter and submillimeter wave region, thousands of solid-state diodes have been monolithically integrated using a metal grid to produce a highly efficient frequency multiplier. Devices considered include GaAs Schottky diodes, thin MOS diodes, and GaAs Barrier-Intrinsic-N(+)diodes. The performance of the present compact low-cost device has been theoretically and experimentally validated.

Hwu, R. J.↗
NASA NTRS1994

Single-Barrier-Varactor 200-GHz Tripler

Single-barrier varactor in crossed waveguide serves as experimental frequency-tripling device with output at frequencies ranging from 186 to 207 GHz. Varactor has symmetrical capacitance-vs.-voltage characteristic and antisymmetrical dc current-vs.-voltage characteristic. As result, generates only odd-harmonic currents when radio-frequency voltage applied at zero dc bias.

Choudhury, Debabani↗