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Results for “valley symmetry”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Inter-valley coherent order and isospin fluctuation mediated superconductivity in rhombohedral trilayer graphene

Superconductivity was recently discovered in rhombohedral trilayer graphene (RTG) in the absence of a moiré potential. Superconductivity is observed proximate to a metallic state with reduced isospin symmetry, but it remains unknown whether this is a coincidence or a key ingredient for superconductivity. Using a Hartree-Fock analysis and constraints from experiments, we argue that the symmetry breaking is inter-valley coherent (IVC) in nature. We evaluate IVC fluctuations as a possible pairing glue, and find that they lead to chiral unconventional superconductivity when the fluctuations are strong. We further elucidate how the inter-valley Hund’s coupling determines the spin-structure of the IVC ground state and breaks the degeneracy between spin-singlet and triplet superconductivity. Remarkably, if the normal state is spin-unpolarized, we find that a ferromagnetic Hund’s coupling favors spin-singlet superconductivity, in agreement with experiments. Instead, if the normal state is spin-polarized, then IVC fluctuations lead to spin-triplet pairing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Every-other-layer dipolar excitons in a spin-valley locked superlattice

Monolayer semiconducting transition metal dichalcogenides possess broken inversion symmetry and strong spin-orbit coupling, leading to a unique spin-valley locking effect. In 2H stacked pristine multilayers, spin-valley locking yields an electronic superlattice structure, where alternating layers correspond to barriers and quantum wells depending on the spin-valley indices. Here, in this work, we show that the spin-valley locked superlattice hosts a kind of dipolar exciton with the electron and hole constituents separated in an every-other-layer configuration: that is, either in two even or two odd layers. Such excitons become optically bright via hybridization with intralayer excitons. This effect is also manifested by the presence of multiple anti-crossing patterns in the reflectance spectra, as the dipolar exciton is tuned through the intralayer resonance by an electric field. The reflectance spectra further reveal an excited state orbital of the every-other-layer exciton, pointing to a sizable binding energy in the same order of magnitude as the intralayer exciton. As layer thickness increases, the dipolar exciton can form a one-dimensional Bose–Hubbard chain displaying layer number-dependent fine spectroscopy structures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

SU(4) symmetry breaking and induced superconductivity in graphene quantum Hall edges

In graphene, the approximate SU(4) symmetry associated with the spin and valley degrees of freedom in the quantum Hall (QH) regime is reflected in the fourfold degeneracy of graphene’s Landau levels (LLs). Interactions and the Zeeman effect break such approximate symmetry and lift the corresponding degeneracy of the LLs. We study how the breaking of the approximate SU(4) symmetry affects the properties of graphene’s QH edge modes located in proximity to a superconductor. We show how the lifting of the fourfold degeneracy qualitatively modifies the transport properties of the QH-superconductor heterojunction. For the zero LL, by placing the edge modes in proximity to a superconductor, it is, in principle, possible to realize a 1D topological superconductor supporting Majoranas in the presence of sufficiently strong Zeeman field. Here, we estimate the topological gap of such a topological superconductor and relate it to the properties of the QH-superconductor interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Understanding Topological Pseudospin Transport in Van Der Waals' Materials

Because of symmetry, crystals often have degenerate valleys in the conduction or the valence band. This “valley” degree of freedom, similar to electronic charge and spin, has been proposed as an information carrier for new classes of electronic and optoelectronic devices. The basic requirement of information processing is to be able to create and manipulate a flow of valley pseudospin, i.e. valley pseudospin current. Valley pseudospin currents have been demonstrated in recent experiments in monolayer molybdenum disulfide and graphene on hexagonal boron nitride. However, the key fundamental questions regarding the nature of valley pseudospin transport remain open. This project will investigate the importance of Berry curvature effects in valley pseudospin transport and explore regimes for quantized valley Hall conductivity and pure valley pseudospin currents. The study will rely on combined optical and electrical transport techniques to create, manipulate and detect valley pseudospin currents in two-dimensional (2D) van der Waals’ materials of hexagonal structure. The insights provided by this research will deepen the understanding of valley pseudospin transport in 2D and help the development of novel valley-based technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Valley magnetism, nematicity, and density wave orders in twisted bilayer graphene

We analyze density wave and Pomeranchuk orders in twisted bilayer graphene. This complements our earlier analysis of the pairing instabilities. We assume that near half filling of either conduction or valence band, the Fermi level is close to Van Hove points, where the density of states diverges, and study potential instabilities in the particle-hole channel within a patch model with two valley degrees of freedom. The hexagonal symmetry of twisted bilayer graphene allows for either six or twelve Van Hove points. We consider both cases and find the same two leading candidates for particle-hole order. One is an SU(2)-breaking spin state with ferromagnetism within a valley. A subleading intervalley hopping induces antiferromagnetism between the valleys. The same state has also been obtained in strong-coupling approaches, indicating that this order is robust. Here, the other is a mixed state with 120° complex spin order and orthogonal complex charge order. In addition, we find a weaker but still attractive interaction in nematic channels, and discuss the type of a nematic order.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Quantum Spin-Valley Hall Kink States: From Concept to Materials Design

We propose a general and tunable platform to realize high-density arrays of quantum spin-valley Hall kink (QSVHK) states with spin-valley-momentum locking based on a two-dimensional hexagonal topological insulator. Through the analysis of Berry curvature and topological charge, the QSVHK states are found to be topologically protected by the valley-inversion and time-reversal symmetries. Remarkably, the conductance of QSVHK states remains quantized against both nonmagnetic short- and long-range and magnetic long-range disorder, verified by the Green-function calculations. Based on first-principles results and our fabricated samples, we show that QSVHK states, protected with a gap up to 287 meV, can be realized in bismuthene by alloy engineering, surface functionalization, or electric field, supporting nonvolatile applications of spin-valley filters, valves, and waveguides even at room temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Weak localization as a probe of intervalley coherence in graphene multilayers

Spontaneous intervalley coherence is suspected in several different graphene multilayer systems, but is difficult to confirm because of a paucity of convenient experimental signatures. Here we suggest that magneto-conductance features associated with quantum corrections to Drude conductivity can serve as a smoking gun for intervalley coherence that does not break time-reversal symmetry. In this class of ordered multilayer quantum transport corrections can produce weak localization or weak antilocalization, depending on whether the valley order belongs to the orthogonal or symplectic symmetry class. Our analysis motivates low-temperature weak-field magnetoresistance measurements in graphene multilayers in which time-reversal invariant intervalley coherent order is conjectured.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Orbital gyrotropic magnetoelectric effect and its strain engineering in monolayer NbX 2

Electrical control of the orbital degrees of freedom is an important area of research in the emerging field of "orbitronics.'' Orbital gyrotropic magneto-electric effect (OGME) is the generation of an orbital magnetization in a nonmagnetic metal by an applied electric field. Here, we show that strain induces a large GME in the monolayer NbX 2 (X = S, Se) normal to the plane, primarily driven by the orbital moments of the Bloch bands as opposed to the conventional spin magnetization, without any need for spin-orbit coupling. The key physics is captured within an effective two-band valley-orbital model and it is shown to be driven by three key ingredients: the intrinsic valley orbital moment, broken $C_{3z}$ symmetry, and strain-induced Fermi surface changes. The effect can be furthermore switched by changing the strain condition, with potential for future device applications.

2D materials↗
DOE OSTI2020

Out-of-plane carrier spin in transition-metal dichalcogenides under electric current

Significance Although out-of-plane current-induced spin polarization (CISP) is important for perpendicular-magnetization reorientation, and it has been realized by the crystalline symmetry breaking, its material examples are relatively fewer compared with in-plane CISP in Rashba systems. With the help of intrinsic spin–orbit coupling, an intriguing out-of-plane CISP is designed in transition-metal dichalcogenides by the symmetry breaking in the spin space, which provides opportunities for out-of-plane magnetization rotation and electric control of valley splitting. Moreover, the spin polarization is associated with valley-dependent responses to electric current and adds a dimension, valley degree of freedom, to the study of CISP. The symmetry argument and non-Rashba effective model also helps to illuminate these physics and broaden the scope of the CISP.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Broken symmetries and excitation spectra of interacting electrons in partially filled Landau levels

Interacting electrons in flat bands give rise to a variety of quantum phases. One fundamental aspect of such states is the ordering of the various flavours – such as spin or valley – that the electrons can undergo and the excitation spectrum of the broken symmetry states that they form. These properties cannot be probed directly with electrical transport measurements. The zeroth Landau level of monolayer graphene with four-fold spin-valley degeneracy is a model system for such investigations, but the nature of its broken symmetry states – particularly at partial fillings – is still not understood. Here, in this study, we demonstrate a non-invasive spectroscopic technique with a scanning tunneling microscope and use it to perform measurements of the valley polarization of the electronic wavefunctions and their excitation spectrum in the partially filled zeroth Landau level of graphene. We can extract information such as the strength of Haldane pseudopotentials that characterize the repulsive interactions underlying the fractional quantum states. Our experiments also demonstrate that fractional quantum Hall phases are built upon broken symmetry states that persist at partial filling. Our experimental approach quantifies the valley phase diagram of the partially filled Landau level as a model flat band platform which is applicable to other graphene-based electronic systems.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Strong Zeeman splitting in orbital-hybridized valleytronic interfaces

We report stacked heterointerfaces of two-dimensional (2D) materials are well-suited to obtain novel electronic functionality at small length scales, because the intrinsic properties of both materials can be blended by interlayer coupling with remarkable effects on the electronic band structure. In particular, band degeneracy at the K and K' Brillouin zone valleys of 2D materials can be broken by symmetry reductions by applying an external magnetic field, with possible application in valleytronic devices. Nevertheless, this usually requires impractically large external magnetic fields > 100 T. An alternative and more practical route is provided via stacking a non-centrosymmetric layered material on a magnetic substrate to induce valley splitting through the magnetic proximity effect; however, the splitting magnitude can vary sharply between similar interfaces. In this work, first-principle calculations are used to calculate the valley splitting of eight low-strain interfaces with transition metal dichalcogenides stacked on 2D magnetic substrates. It is shown that the interlayer band hybridization plays a major role when the two layers’ bands are closely aligned in energy, with the resulting band repulsion and the total valley splitting being strongly dependent on the Hubbard U correction , showing up to an order of magnitude change. The WSe 2 /CrGeTe 3 interface in particular shows strong interlayer interactions, which can potentially lead to a significantly high valley splitting of 26 meV; however further experimental investigations will be needed to resolve uncertainties in the predicted valley splitting.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Tuning commensurability in twisted van der Waals bilayers

Moiré superlattices based on van der Waals bilayers created at small twist angles lead to a long wavelength pattern with approximate translational symmetry. At large twist angles ( θ t ), moiré patterns are, in general, incommensurate except for a few discrete angles. Here we show that large-angle twisted bilayers offer distinctly different platforms. More specifically, by using twisted tungsten diselenide bilayers, we create the incommensurate dodecagon quasicrystals at θ t = 30° and the commensurate moiré crystals at θ t = 21.8° and 38.2°. Further, valley-resolved scanning tunnelling spectroscopy shows disparate behaviours between moiré crystals (with translational symmetry) and quasicrystals (with broken translational symmetry). In particular, the K valley shows rich electronic structures exemplified by the formation of mini-gaps near the valence band maximum. These discoveries demonstrate that bilayers with large twist angles offer a design platform to explore moiré physics beyond those formed with small twist angles.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Layered Semiconductor Cr 0.32 Ga 0.68 Te 2.33 with Concurrent Broken Inversion Symmetry and Ferromagnetism: A Bulk Ferrovalley Material Candidate

The valleytronic state found in group-VI transition-metal dichalcogenides such as MoS2 has attracted immense interest since its valley degree of freedom could be used as an information carrier. However, valleytronic applications require spontaneous valley polarization. Such an electronic state is predicted to be accessible in a new ferroic family of materials, i.e., ferrovalley materials, which features the coexistence of spontaneous spin and valley polarization. Although many atomic monolayer materials with hexagonal lattices have been predicted to be ferrovalley materials, no bulk ferrovalley material candidates have been reported or proposed. Here, in this work, we show that a new non-centrosymmetric van der Waals (vdW) semiconductor Cr 0.32 Ga 0.68 Te 2.33 , with intrinsic ferromagnetism, is a possible candidate for bulk ferrovalley material. This material exhibits several remarkable characteristics: (i) it forms a natural heterostructure between vdW gaps, a quasi-two-dimensional (2D) semiconducting Te layer with a honeycomb lattice stacked on the 2D ferromagnetic slab comprised of the (Cr, Ga)-Te layers, and (ii) the 2D Te honeycomb lattice yields a valley-like electronic structure near the Fermi level, which, in combination with inversion symmetry breaking, ferromagnetism, and strong spin-orbit coupling contributed by heavy Te element, creates a possible bulk spin-valley locked electronic state with valley polarization as suggested by our DFT calculations. Further, this material can also be easily exfoliated to 2D atomically thin layers. Therefore, this material offers a unique platform to explore the physics of valleytronic states with spontaneous spin and valley polarization in both bulk and 2D atomic crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Band inversion-driven warping and high valley degeneracy

Band inversion is a physical phenomenon that can warp the band structure in topological insulators, generating multiple electronic valleys for conducting carriers. However, the conditions under which band inversion induces warping are not well understood. Here, we derive two general rules that must be satisfied for band warping to occur in centrosymmetric and non-magnetic topological insulators: (1) bands must be sufficiently inverted, and (2) secondary bands must have opposite parity and be close in energy to the band edges. We chart the valley degeneracies that can emerge from band inversion in each of the 11 centrosymmetric point groups, revealing that an increase in the valley degeneracy between 2- and 48-fold is possible from band inversion. The generalized rules offer a unique band engineering approach by capitalizing on the non-trivial electronic structures of topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Tunable valleytronics with symmetry-retaining high polarization degree in SnS x Se 1–x model system

SnS has recently been shown to possess unique valleytronic capability with a large polarization degree, where non-degenerate valleys can be accessed using linearly polarized light, bestowed upon by the unique anisotropy and wavefunction symmetry. It is thus of utmost importance to demonstrate the extension of such effects for the IV–VI system in general, thereby elucidating the generality and tunability of such valleytronics. In this study, we show the highly tunable valleytronics via gradual compositional control of the tin(II) sulfo-selenide (SnS x Se 1–x ) alloy system with excellent retainment of symmetry-determined selection rules. We show the presence of both ΓY and ΓX valleys in all alloy compositions via selectivity in absorption and emission of linearly polarized light by optical reflection (R)/transmission (T) and photoluminescence measurements and tuned the bandgaps of the valleys within a range of 1.28 eV–1.05 eV and 1.48 eV–1.24 eV, respectively. This simultaneous tuning of non-degenerate valleys agrees well with theoretical calculations. We then fitted the bandgap values in compositional space, obtaining bowing parameters as a useful database. We further demonstrated the feasibility of using IV–VI valleytronics systems in general by elucidating the retainment of strong polarization degrees of as high as 91% across all compositions. The generalization of such purely symmetry-dependent valleytronics also opens up opportunities for the discovery of more multi-functional materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Perovskite-Derivative Valleytronics

Halide perovskites are revolutionizing the renewable energy sector owing to their high photovoltaic efficiency, low manufacturing cost, and flexibility. Their remarkable mobility and long carrier lifetime are also valuable for information technology, but fundamental challenges like poor stability under an electric field prevent realistic applications of halide perovskites in electronics. Here, it is discovered that valleytronics is a promising route to leverage the advantages of halide perovskites and derivatives for information storage and processing. The synthesized all-inorganic lead-free perovskite derivative, Cs 3 Bi 2 I 9 , exhibits strong light-matter interaction and parity-dependent optically addressable valley degree of freedom. In this work, robust optical helicity in all odd-layer-number crystals with inversion symmetry breaking is observed, indicating excitonic coherence extending well beyond 11 layers. The excellent optical and valley properties of Cs 3 Bi 2 I 9 arise from the unique parallel bands, according to first principles calculations. This discovery points to new materials design principles for scalable valleytronic devices and demonstrates the promise of perovskite derivatives beyond energy applications.

2D materials↗
DOE OSTI2023

Optically controlled single-valley exciton doublet states with tunable internal spin structures and spin magnetization generation

Manipulating quantum states through light–matter interactions has been actively pursued in two-dimensional materials research. Significant progress has been made toward the optical control of the valley degrees of freedom in semiconducting monolayer transition-metal dichalcogenides, based on doubly degenerate excitons from their two distinct valleys in reciprocal space. Here, we introduce a type of optically controllable doubly degenerate exciton states that come from a single valley, dubbed as single-valley exciton doublet (SVXD) states. They are unique in that their constituent holes originate from the same valence band, making possible the direct optical control of the spin structure of the excited constituent electrons. Combining ab initio GW plus Bethe–Salpeter equation ( GW -BSE) calculations and a theoretical analysis method, we demonstrate such SVXD in substrate-supported monolayer bismuthene—which has been successfully grown using molecular beam epitaxy. In each of the two distinct valleys in the Brillouin zone, strong spin–orbit coupling and C 3 v symmetry lead to a pair of degenerate 1s exciton states (the SVXD states) with opposite spin configurations. Any coherent linear combinations of the SVXD in a single valley can be excited by light with a specific polarization, enabling full manipulation of their internal spin configurations. In particular, a controllable net spin magnetization can be generated through light excitation. Our findings open routes to control quantum degrees of freedom, paving the way for applications in spintronics and quantum information science.

2D materials↗
DOE OSTI2020

Beyond Graphene: Low-Symmetry and Anisotropic 2D Materials

Low-symmetry 2D materials—such as ReS 2 and ReSe 2 monolayers, black phosphorus monolayers, group-IV monochalcogenide monolayers, borophene, among others—have more complex atomistic structures than the honeycomb lattices of graphene, hexagonal boron nitride, and transition metal dichalcogenides. The reduced symmetries of these emerging materials give rise to inhomogeneous electron, optical, valley, and spin responses, as well as entirely new properties such as ferroelasticity, ferroelectricity, magnetism, spin-wave phenomena, large nonlinear optical properties, photogalvanic effects, and superconductivity. Novel electronic topological properties, nonlinear elastic properties, and structural phase transformations can also take place due to low symmetry. Lastly, the “Beyond Graphene: Low-Symmetry and Anisotropic 2D Materials” Special Topic was assembled to highlight recent experimental and theoretical research on these emerging materials.

2D materials↗