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At least 37 records · Page 2

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NASA NTRS2005

Crane-Load Contact Sensor

An electronic instrument has been developed as a prototype of a portable crane-load contact sensor. Such a sensor could be helpful in an application in which the load rests on a base in a horizontal position determined by vertical alignment pins (see Figure 1). If the crane is not positioned to lift the load precisely vertically, then the load can be expected to swing once it has been lifted clear of the pins. If the load is especially heavy, large, and/or fragile, it could hurt workers and/or damage itself and nearby objects. By indicating whether the load remains in contact with the pins when it has been lifted a fraction of the length of the pins, the crane-load contact sensor helps the crane operator determine whether it is safe to lift the load clear of the pins: If there is contact, then the load is resting against the sides of the pins and, hence, it may not be safe to lift; if contact is occasionally broken, then the load is probably not resting against the pins, so it should be safe to lift. It is assumed that the load and base, or at least the pins and the surfaces of the alignment holes in the load, are electrically conductive, so the instrument can use electrical contact to indicate mechanical contact. However, DC resistance cannot be used as an indicator of contact for the following reasons: The load and the base are both electrically grounded through cables (the load is grounded through the lifting cable of the crane) to prevent discharge of static electricity. In other words, the DC resistance between the load and the pins is always low, as though they were always in direct contact. Therefore, instead of DC resistance, the instrument utilizes the AC electrical impedance between the pins and the load. The signal frequency used in the measurement is high enough (.1 MHz) that the impedance contributed by the cables and the electrical ground network of the building in which the crane and the base are situated is significantly greater than the contact impedance between the pins and the load. The instrument includes a signal generator and voltage-measuring circuitry, and is connected to the load and the base as shown in Figure 2. The output of the signal generator (typically having amplitude of the order of a volt) is applied to the load via a 50-resistor, and the voltage between the load and the pins is measured. When the load and the pins are not in contact, the impedance between them is relatively high, causing the measured voltage to exceed a threshold value. When the load and the pins are in contact, the impedance between them falls to a much lower value, causing the voltage to fall below the threshold value. The voltage-measuring circuitry turns on a red light-emitting diode (LED) to indicate the lower-voltage/ contact condition. Whenever the contact has been broken and the non-contact/higher-voltage condition has lasted for more than 2 ms, the voltage-measuring circuitry indicates this condition by blinking a green LED.

Youngquist, Robert↗

NASA NTRS2006

Snap-Through of Unsymmetric Laminates Using Piezocomposite Actuators

The paper discusses the concept of using a piezoceramic actuator bonded to one side of a two-layer unsymmetric cross-ply [0/90]T laminate to provide the moments necessary to snap the laminate from one stable equilibrium shape to another. This concept could be applied to the morphing of structures. A model of this concept, which is based on the Rayleigh-Ritz technique and the use of energy and variational methods, is developed. The experimental phase of the study is discussed, including the measurement of the voltage level needed to snap the laminate. The voltage measurements and shapes are compared with predictions of the models and the agreement between measurements and the predictions are reasonable, both qualitatively and quantitatively. Suggestions for future activities are presented.

Schultz, Marc R.↗

NASA NTRS2008

Damage Diagnosis in Semiconductive Materials Using Electrical Impedance Measurements

Recent aerospace industry trends have resulted in an increased demand for real-time, effective techniques for in-flight structural health monitoring. A promising technique for damage diagnosis uses electrical impedance measurements of semiconductive materials. By applying a small electrical current into a material specimen and measuring the corresponding voltages at various locations on the specimen, changes in the electrical characteristics due to the presence of damage can be assessed. An artificial neural network uses these changes in electrical properties to provide an inverse solution that estimates the location and magnitude of the damage. The advantage of the electrical impedance method over other damage diagnosis techniques is that it uses the material as the sensor. Simple voltage measurements can be used instead of discrete sensors, resulting in a reduction in weight and system complexity. This research effort extends previous work by employing finite element method models to improve accuracy of complex models with anisotropic conductivities and by enhancing the computational efficiency of the inverse techniques. The paper demonstrates a proof of concept of a damage diagnosis approach using electrical impedance methods and a neural network as an effective tool for in-flight diagnosis of structural damage to aircraft components.

Ross, Richard W.↗

NASA NTRS1994

Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

Tabory, Charles N.↗

NASA NTRS1996

Capaciflector-guided mechanisms

A plurality of capaciflector proximity sensors, one or more of which may be overlaid on each other, and at least one shield are mounted on a device guided by a robot so as to see a designated surface, hole or raised portion of an object, for example, in three dimensions. Individual current-measuring voltage follower circuits interface the sensors and shield to a common AC signal source. As the device approaches the object, the sensors respond by a change in the currents therethrough. The currents are detected by the respective current-measuring voltage follower circuits with the outputs thereof being fed to a robot controller. The device is caused to move under robot control in a predetermined pattern over the object while directly referencing each other without any offsets, whereupon by a process of minimization of the sensed currents, the device is dithered or wiggled into position for a soft touchdown or contact without any prior contact with the object.

Vranish, John M.↗

NASA NTRS1977

Fast measurement of MOS capacitors

Method allows flatband voltage measurement of capacitors to be taken quickly and precisely while capacitor is subject to desired conditions.

Bates, E. T., Jr.↗

NASA NTRS1985

High-Visibility Data Display

Data-monitoring system continuously senses output voltages from transducers and provides large, easy-to-read displays of quantities represented by voltages. Measurements of power-supply voltages and currents, pressures, temperatures, strains, and masses displayed. System intended to operate 24 hours a day, producing uninterrupted readouts of critical parameters.

Slusser, K.↗

NASA NTRS1993

Electrooptic polymer voltage sensor and method of manufacture thereof

An optical voltage sensor utilizing an electrooptic polymer is disclosed for application to electric power distribution systems. The sensor, which can be manufactured at low cost in accordance with a disclosed method, measures voltages across a greater range than prior art sensors. The electrooptic polymer, which replaces the optical crystal used in prior art sensors, is sandwiched directly between two high voltage electrodes. Voltage is measured by fiber optical means, and no voltage division is required. The sample of electrooptic polymer is fabricated in a special mold and later mounted in a sensor housing. Alternatively, mold and sensor housing may be identical. The sensor housing is made out of a machinable polymeric material and is equipped with two opposing optical windows. The optical windows are mounted in the bottom of machined holes in the wall of the mold. These holes provide for mounting of the polarizing optical components and for mounting of the fiber optic connectors. One connecting fiber is equipped with a light emitting diode as a light source. Another connecting fiber is equipped with a photodiode as a detector.

Gottsche, Allan↗

NASA NTRS2012

High-Voltage, Low-Power BNC Feedthrough Terminator

This innovation is a high-voltage, lowpower BNC (Bayonet Neill-Concelman) feedthrough that enables the user to terminate an instrumentation cable properly while connected to a high voltage, without the use of a voltage divider. This feedthrough is low power, which will not load the source, and will properly terminate the instrumentation cable to the instrumentation, even if the cable impedance is not constant. The Space Shuttle Program had a requirement to measure voltage transients on the orbiter bus through the Ground Lightning Measurement System (GLMS). This measurement has a bandwidth requirement of 1 MHz. The GLMS voltage measurement is connected to the orbiter through a DC panel. The DC panel is connected to the bus through a nonuniform cable that is approximately 75 ft (approximately equal to 23 m) long. A 15-ft (approximately equal to 5-m), 50-ohm triaxial cable is connected between the DC panel and the digitizer. Based on calculations and simulations, cable resonances and reflections due to mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. A voltage divider at the DC panel, and terminating the 50-ohm cable properly, would eliminate this issue. Due to implementation issues, an alternative design was needed to terminate the cable properly without the use of a voltage divider. Analysis shows how the cable resonances and reflections due to the mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. After simulating a dampening circuit located at the digitizer, simulations were performed to show how the cable resonances were dampened and the accuracy was improved significantly. Test cables built to verify simulations were accurate. Since the dampening circuit is low power, it can be packaged in a BNC feedthrough.

Bearden, Douglas↗

NASA NTRS1978

Results of module electrical measurement of the DOE 46-kilowatt procurement

Current-voltage measurements have been made on terrestrial solar cell modules of the DOE/JPL Low Cost Silicon Solar Array procurement. Data on short circuit current, open circuit voltage, and maximum power for the four types of modules are presented in normalized form, showing distribution of the measured values. Standard deviations from the mean values are also given. Tests of the statistical significance of the data are discussed.

Curtis, H. B.↗

NASA NTRS1990

Power system state estimation for a spacecraft power system

An application of the maximum likelihood state estimator to a space-based power system is presented. The state estimator uses current and voltage measurements to generate estimates of node voltages for an electrical power distribution system for the Space Shuttle. Preliminary results on the effect of noisy measurements on estimated parameters are reported. The software used in generating these results is part of an overall package being developed at Louisiana Tech University. Intended applications of this package include the analysis of power systems and real-time parallel processing on the Space Shuttle.

Berry, F. C.↗

NASA NTRS1987

A study of charged particles/radiation damage to VLSI device materials

Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.

Okyere, John G.↗

NASA NTRSDate not supplied

Lightning Instrumentation System

A new comprehensive lightning instrumentation system has been designed for the Mobile Launcher 1 (ML-1) at the Kennedy Space Center, Florida. This new instrumentation system includes the synchronized recording of three B-dot, 3-axis measurement stations, one D-dot sensor and eighteen vehicle measurement channels. Each vehicle measurement channel is comprised of two currents and one voltage measurements. The instrumentation system is composed of centralized transient recorders and digitizers, connected to the transient recorders via fiber optic cables. The transient recorders are triggered by the B-dot or D-dot sensors. When the Space Launch System (SLS) vehicle is present at the ML-1, the transient recorders record data on a dual sampling rate mode, continuous slow 5 kilo-samples per second (per channel) and event driven fast 100 mega-samples per second (per channel). Without the presence of the vehicle at the ML-1, the instrumentation system operates only as an event driven fast 100 mega-samples per second (per channel). In the absence of the vehicle, the only measurements recorded are the B-dot and D-dot stations. Additionally, a portable Lightning Monitoring System (LMS) is temporarily installed inside the Orion Crew Capsule module monitoring one portable B-dot, 3-axis measurement station, and 2 Crew Capsule BUS voltages. The portable LMS has a transient recorder independent of the ML-1 transient recorders, that is triggered by the portable B-dot sensor or transients on the vehicle BUS voltages. This portable instrumentation is removed while performing close out operations before the vehicle launch. For the ML-1 lightning instrumentation system, new custom B-dot and D-dot sensors were designed and prototypes were tested at the International Center for Lightning Research and Testing (ICLRT) at Camp Blanding, Florida. The Ground Special Power (GSP) vehicle measurement channels monitoring on the ML-1 is done via 1) Commercial off-the-shelf (COTS) current shunts and 2) custom Voltage Dividers. The new ML-1 lightning instrumentation system was designed, fabricated, deployed, and tested prior to the summer of 2019, in preparation for the first NASA's SLS mission to be launched from the Launch Complex 39B (LC-39B). The ML-1 lightning instrumentation was designed to complement the LC-39B lightning instrumentation system providing electromagnetic measurements closer to the vehicle, at different heights and inside the Crew capsule module.

Angel G Mata↗

NASA NTRS1977

Terrestrial photovoltaic measurement procedures

Procedures for obtaining cell and array current-voltage measurements both outdoors in natural sunlight and indoors in simulated sunlight are presented. A description of the necessary apparatus and equipment is given for the calibration and use of reference solar cells. Some comments relating to concentration cell measurements, and a revised terrestrial solar spectrum for use in theoretical calculations, are included.

Source record↗

NASA NTRS1994

Constant current loop impedance measuring system that is immune to the effects of parasitic impedances

A constant current loop measuring system is provided for measuring a characteristic of an environment. The system comprises a first impedance positionable in the environment, a second impedance coupled in series with said first impedance and a parasitic impedance electrically coupled to the first and second impedances. A current generating device, electrically coupled in series with the first and second impedances, provides a constant current through the first and second impedances to produce first and second voltages across the first and second impedances, respectively, and a parasitic voltage across the parasitic impedance. A high impedance voltage measuring device measures a voltage difference between the first and second voltages independent of the parasitic voltage to produce a characteristic voltage representative of the characteristic of the environment.

Anderson, Karl F.↗

NASA NTRS1977

Instrumentation for measuring low-level currents/voltages

Instrumentation consists of high-output resistance voltage measuring amplifier (electrometer) and current-to-frequency converter (current digitizer) coupled to set of timers and counters. Digital display of time-averaged signals with amplitudes varying over 11 decades is possible.

Richmond, R. G.↗

NASA NTRS1981

Altus small button cell performance

Results of testing performed on Altus lithium thionyl chloride cells are presented. The test plan followed simulates the mine environment. It involves nondestructive testing, ruggedness testing and destructive testing. The nondestructive testing involves open circuit voltage measurements initially on all the cells, alternating current resistance measurements initially on all the cells and closed circuit voltage pulses, 20s on and 20s through 1000, 100, 10 and 1 ohms at temperatures of -54 to 71 C. The ruggedness testing involves low frequency vibration, high frequency vibration, and two-phase water entry shock at temperatures of -54, 25 and 71 C. It also involves thermal shock tests.

Freeman, C.↗

NASA NTRS2006

Hybrid Ion-Detector/Data-Acquisition System for a TOF-MS

A modified ion-detector/data-acquisition system has been devised to increase the dynamic range of a time-of-flight mass spectrometer (TOF-MS) that, previously, included a microchannel-plate detector and a data-acquisition system based on counting pulses and time-tagging them by use of a time-to-digital converter (TDC). The dynamic range of the TOF-MS was limited by saturation of the microchannel plate detector, which can handle no more than a few million counts per second. The modified system includes (1) a combined microchannel plate/discrete ion multiplier and (2) a hybrid data-acquisition system that simultaneously performs analog current or voltage measurements and multianode single-ion-pulse-counting time-of-flight measurements to extend the dynamic range of a TDC into the regime in which a mass peak comprises multiple ions arriving simultaneously at the detector. The multianode data are used to determine, in real time, whether the detector is saturated. When saturation is detected, the data-acquisition system selectively enables circuitry that simultaneously determines the ion-peak intensity by measuring the time profile of the analog current or voltage detector-output signal.

Burton, William D., Jr.↗