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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Pyrolyzer Assisted Vapor Transport Deposition of Antimony-Doped Cadmium Telluride

In this study, we developed a new method for in situ Sb doping of CdTe thin films combining vapor transport deposition with a Group V pyrolyzer to address Sb doping concentration and doping efficiency. The Sb doped CdSeTe (CdSeTe:Sb) films were deposited in solar cell structures under variations of Sb dopant source heater, vapor pyrolyzer temperature, and Cd vapor excess. Results indicate that although these parameters do not affect the CdTe morphology or crystal structure, they critically influence doping efficiency and trap concentration. Capacitance-voltage measurements show that a higher dopant heater (TD) or pyrolyzer (TP) temperature leads to higher net carrier concentration, achieving a net carrier concentration of 1016 cm-3 and 20% doping efficiency with a TD/TP combination of 600 degrees C/1100 degrees C. By tuning the Cd/Sb flux ratio during CdSeTe:Sb deposition, the lowest defect concentration is achieved at Cd/Sb of 1.4:1, which produced the best VOC CdSeTe:Sb cell. This demonstrates a path to produce high net carrier concentration polycrystalline CdTe thin film with a low concentration of dopant-induced defects.

14 SOLAR ENERGY↗
DOE OSTI2022

Epitaxial Sc x Al 1- x N on GaN exhibits attractive high-K dielectric properties

Epitaxial Sc x Al 1- x N thin films of ~100 nm thickness grown on metal polar GaN substrates are found to exhibit significantly enhanced relative dielectric permittivity (ε r ) values relative to AlN. ε r values of ~17–21 for Sc mole fractions of 17%–25% ( x = 0.17–0.25) measured electrically by capacitance–voltage measurements indicate that Sc x Al 1- x N has the largest relative dielectric permittivity of any existing nitride material. Since epitaxial Sc x Al 1- x N layers deposited on GaN also exhibit large polarization discontinuity, the heterojunction can exploit the in situ high-K dielectric property to extend transistor operation for power electronics and high-speed microwave applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Spatial-Temporal Recurrent Graph Neural Networks for Fault Diagnostics in Power Distribution Systems

Fault diagnostics are extremely important to decide proper actions toward fault isolation and system restoration. The growing integration of inverter-based distributed energy resources imposes strong influences on fault detection using traditional overcurrent relays. This paper utilizes emerging graph learning techniques to build new temporal recurrent graph neural network models for fault diagnostics. The temporal recurrent graph neural network structures can extract the spatial-temporal features from data of voltage measurement units installed at the critical buses. From these features, fault event detection, fault type/phase classification, and fault location are performed. Compared with previous works, the proposed temporal recurrent graph neural networks provide a better generalization for fault diagnostics. Moreover, the proposed scheme retrieves the voltage signals instead of current signals so that there is no need to install relays at all lines of the distribution system. Therefore, the proposed scheme is generalizable and not limited by the number of relays installed. The effectiveness of the proposed method is comprehensively evaluated on the Potsdam microgrid and IEEE 123-node system in comparison with other neural network structures.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2026

Collaborative R&D with REEL Solar Inc (REEL) to Understand and Overcome Performance Limitations in CdTe Solar Cells: Cooperative Research and Development (Final Report)

This CRADA will focus on processing, advanced characterization, and testing of photovoltaic materials and devices to understand and improve REEL CdTe solar technology. This will include examining process variations and different buffer, absorber, and contact layers from REEL and NLR to maximize performance. The unique and diverse advanced characterization tools at NLR, such as time-resolved photoluminescence, capacitance-voltage measurements, electron beam scattered diffraction, cathodoluminescence, electron microscopy, TOF-SIMS, and other measurements will be applied to characterize REEL processing to improve understanding and guide experimental directions. Accelerated stability and potential induced degradation tests will be used to analyze metastability, short-and-long term degradation, and improve bankability. A second and major thrust this period will be joint development of Si/CdTe tandem solar cells to overcome industry wide terrestrial solar efficiency limits with the two lowest cost and manufacturable solar materials today. This will include developing novel transparent back contacts that can be incorporated into tandem structures and other novel solar applications, detailed analysis of designs and configurations for CdTe/Si tandem modules, and prototyping REEL CdTe Technology with Si bottom cells in tandem structures.

14 SOLAR ENERGY↗
DOE OSTI2021

Heterogeneous network topology management and control

In one aspect, the present disclosure may provide devices or systems configured to receive indications of geographic areas, each corresponding to distribution networks, and determine whether the distribution networks overlap. The processor(s) may also be configured to receive parameter value(s) obtained by a device within one distribution network at a location within an overlapping area, and cause device(s) within another distribution network to modify operation based on the parameter value(s). In another aspect, the present disclosure may provide devices that include a voltage sensor to measure a voltage of a power distribution network at a power consumption location that corresponds to the device. The device may be configured to provide at least one cable service to the power consumption location via a cable television (CATV) distribution network and output an indication the measured voltage value.

Cruickshank, III, Robert Fraser↗
DOE OSTI2020

Spin Rectification and Electrically Controlled Spin Transport in Molecular-Ferroelectrics-Based Spin Valves

We report a spin-rectification effect in a spin-valve structure consisting of ferroelectric croconic acid (C 5 H 2 O 5 ) sandwiched between ferromagnetic electrodes La 0.7 Sr 0.3 MnO 3 and Co, which can be switched between a high-resistance (off ) and a low-resistance (on) state by a poling voltage. In the off state, the magnetoresistance (MR) sign reverses with the measurement voltage with a 0.1-V offset, suggesting a spin-rectification behavior, while in the on state the MR remains negative. These observations can be understood in terms of electrically controlled interfacial energy-band alignment either from the electrostatic effect or from the interfacial redox process. In conclusion, the observed spin-rectification effect suggests thepossibility of diodelike devices for spin-polarized current.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Remotely powered line monitor

Improved devices, apparatuses, systems, and methods involving the use of field probes with voltage-controlled variable impedance elements and surface-launched acoustic wave devices, including surface acoustic wave (SAW) devices and SAW sensor-tag wireless interface devices to measure voltage and current in current carrying conductors (CCCs) via measurement of the electric fields and magnetic fields around said CCCs are disclosed. The devices, apparatuses, systems, and methods taught in the present invention include a remotely powered line-mounted measurement unit that requires no connection to electrical ground for operation, and that has no internal energy source, no energy harvesting or power conditioning circuitry, no discrete energy storage components, and no radio. The devices, apparatuses, systems, and methods taught in the present invention also provide for determining the phase (leading or lagging) of the current relative to the voltage in AC power systems, and also provide for measurement of temperature of the conductor.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2026

Nonlinear electrical transport near the metal–insulator transition in V 4 O 7 thin films

Nonlinear electrical transport associated with correlated electronic states has been widely investigated in transition-metal oxides near metal–insulator transitions. Here, in this study, we investigate nonlinear transport and threshold switching in sputter-deposited V 4 O 7 thin films grown on fused silica substrates. Temperature-dependent transport measurements show a metal–insulator transition near 240 K with negligible thermal hysteresis, defining the temperature scale that governs the nonlinear electrical response. Current–voltage measurements reveal reproducible bipolar threshold switching over a broad temperature range, with the threshold voltage decreasing systematically as the transition temperature is approached. Electrothermal finite-element simulations reproduce the measured switching characteristics and show that switching occurs when localized Joule heating drives a confined region of the device toward the transition temperature. The simulated peak local temperature at threshold lies close to the intrinsic metal–insulator transition temperature of V 4 O 7 , establishing that the nonlinear electrical response originates from electrothermal feedback acting on the strongly temperature-dependent conductivity near the transition. These results identify V 4 O 7 thin films as a model correlated-oxide system in which volatile threshold switching emerges from proximity to an extended metal–insulator transition.

25 ENERGY STORAGE↗
DOE OSTI2023

An Ultra-Fast Inrush-Current-Free Startup Method for Grid-tie Inverter without Voltage Sensors

This paper proposes an ultra-fast inrush-currentfree startup method for grid-tie inverters without voltage sensors and phase-locked loop (PLL). Traditionally, the grid-tie inverter needs the voltage measured from points of common couplings (PCC) to generate the phase angle via PLL for inverter pulsewidth- modulation (PWM) signals. The startup procedure is slow and inrush current occurs if the initial PWM does not match the unknown grid voltage well. This paper proposes a startup method that only uses measured inverter ac currents to generate the initial PWM by controlling the current to zero. The generated PWM pattern can be used to reproduce the real grid voltage regardless of the grid impedance. The zero-crossing points of the grid voltage are detected and then used for grid synchronization. The proposed startup procedure only needs a few cycles (16.67 ms/cycle) to reliably synchronize the inverter to the grid without any inrush current. Simulation and experimental results are presented to verify the effectiveness of this control strategy.

He, Yuchen↗
DOE OSTI2024

Nanosecond Transient Validation of Surge Arrester Models to Predict Electromagnetic Pulse Response

The impact of high-altitude electromagnetic pulse events on the electric grid is not fully understood, and validated modeling of mitigations, such as lightning surge arresters (LSAs) is necessary to predict the propagation of very fast transients on the grid. Experimental validation of high frequency models for surge arresters is an active area of research. Further, this article serves to experimentally validate a previously defined ZnO LSA model using four metal-oxide varistor pucks and nanosecond scale pulses to measure voltage and current responses. The SPICE circuit models of the pucks showed good predictability when compared to the measured arrester response when accounting for a testbed inductance of approximately 100 nH. Additionally, the comparatively high capacitance of low-profile arresters show a favorable response to high-speed transients that indicates the potential for effective electromagnetic pulse mitigation with future materials design.

42 ENGINEERING↗
DOE OSTI2026

Breakdown and Discharge Characteristics of High Repetition Frequency Nanosecond Pulsed Air Dielectric Barrier Discharge

This study explores the breakdown characteristics and discharge modes in a parallel plate air dielectric barrier discharge system using repetitive nanosecond pulses, with pulse repetition frequencies (PRFs) from 0.1 to 100 kHz. It examines how pulse parameters—PRF, pulse number and gas pressure—affect the memory effect, leveraging current and voltage measurements, fast imaging and optical emission spectroscopy. The findings show that higher PRFs lead to a reduction in breakdown voltage well below the streamer breakdown threshold. We argue that this effect may be attributed to the cumulative buildup of metastable species and negative ions in the discharge gap which could sustain free electrons in‐between the voltage pulses. Despite observing increased energy deposition with higher PRFs, the impact on filament formation was minimal, highlighting a strong dependence of discharge morphology on the accumulation of plasma‐produced species. This research studies provides valuable insights for controlling discharge regimes in applications such as plasma‐assisted combustion, surface treatment and air treatment by clarifying the interactions between discharge mechanisms at different PRFs and pressures.

42 ENGINEERING↗
DOE OSTI2023

Effects of 63 MeV proton irradiation on the performance of MWIR InGaAs/InAsSb nBn photodetectors

An investigation into the effects of 63 MeV proton irradiation on high-sensitivity mid-wave infrared InGaAs/InAsSb nBn devices is performed. Three different structures with various absorber region doping profiles are irradiated and characterized to assess their impact on performance degradation. Minority carrier lifetime is measured using time-resolved photoluminescence and lifetime damage factors are assessed. The majority carrier concentration is determined via capacitance–voltage measurements and dopant introduction rates are calculated. An analysis of dark current density is performed using these material parameters, revealing a reduction in mobility with proton fluence and the emergence of a proton-induced trap energy level. Quantum efficiency is calculated at each proton fluence, and quantum efficiency damage factors show that the graded doping structure exhibits the least reduction of quantum efficiency with dose, attributed to its effective mobility enhancement. Conclusively, detector sensitivity, assessed via shot-noise limited noise-equivalent irradiance, shows that the graded doping structure is the least susceptible to high energy proton irradiation-induced performance degradation.

Physics↗
DOE OSTI2020

Current Observer Based Predictive Decoupled Power Control Grid-Interactive Inverter

This paper presents a sensor-less current model predictive control (MPC) scheme via a full state observer based current estimator. The grid interactive inverters’ control schemes require current and voltage sensors. Elimination of current sensor enhances the inverter reliability. This paper leverages the inherent characteristics of MPC towards robust current sensor-less grid interactive inverter with LC filter. The observer for inductor current is developed based on the existing capacitor voltage measurement. The estimator dynamic state-space matrices are then obtained through reconstruction of the inverter model with the capacitor voltage and inductor current being the state variables. The controller objectives are to regulate active and reactive power in a decoupled manner. The theoretical expectation, controller performance, and accuracy of the current estimation are verified by conducting a real-time simulation via Typhoon HIL.

Zhang, Zhen↗
DOE OSTI2020

Electrical meter probe contact verification system

A system and method verifies continuity with and measures voltage across a circuit under test (in some instances simultaneously) using two or more test probes. Two or more probe continuity circuits measure continuity through the test probes by injecting a test current through and measuring a processed test current received at each of the plurality of test probes. The probe continuity circuits measure the respective processed test current rendered by the test current flowing through the test circuit at each test probe. A voltmeter measures the potential difference across the test probes.

42 ENGINEERING↗
DOE OSTI2023

The Effect of Dopant Concentration and Annealing Treatments on N-Type Iodine Doped CdTe

We report properties of highly conducting n-type cadmium telluride single crystals doped with iodine (CdTe:I). These crystals were grown with dopant concentrations in the range of 10^17 cm-3 to 10^19 cm-3 by Modified Vertical Bridgman (MVB) melt growth. Post-growth dopant activation, including Cd annealing, Te annealing, and rapid thermal annealing (RTA), was applied to improve free carrier density. The structural, optical, and electrical properties were analyzed by Glow Discharge Mass Spectroscopy (GDMS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Photoluminescence Spectroscopy (PL), optical absorption, Hall measurements, Capacitance-Voltage (CV) measurements, and time-resolved photoluminescence (TRPL). The results indicate that Cd annealing is the most effective activation method to get 100% donor activation (n is approximately 2 x 10^18 cm-3), which is close to the room temperature solubility limit of iodine. This leads to the lowest resistivity and the highest mobility. Moreover, this data suggests a potential role of Cd vacancy-related defects on electrical self-compensation.

annealing↗
DOE OSTI2023

Contactless measurement of the photovoltage in BiVO 4 photoelectrodes

The power output of photoelectrochemical devices for solar energy-to-fuel conversion is determined by the photovoltage of the junction under illumination. In the presence of fast redox couples, the photovoltage can be obtained directly from current–voltage measurements of the device. However, for slow redox couples (H + /H 2 , O 2 /H 2 O) used in solar fuel photoelectrodes, photovoltage measurements are not straightforward, due to the kinetic overpotentials during charge transfer. Here we show that the photovoltage of BiVO 4 electrodes in contact with fast electron donors KI, Na 2 SO 3 or H 2 O 2 or K 4 Fe(CN) 6 can be measured in a contactless way with vibrating Kelvin probe surface photovoltage (SPV) spectroscopy. The photovoltage varies with illumination wavelength and intensity and matches the open circuit potential of the electrodes, obtained separately from electrochemical measurements. Plots of the photovoltage versus irradiance can be used to predict the oxidizing power of each electrode under zero applied bias. Except for K 4 Fe(CN) 6 , which causes shunting in the BiVO 4 electrode, photovoltage values correlate well with the built-in potential of each junction. Furthermore, the ability to obtain photovoltage information through contactless SPV measurements will be useful in the search for solid–liquid junctions with superior energy conversion properties.

14 SOLAR ENERGY↗
DOE OSTI2024

Reducing the Barrier Height in Organic Transistors

Abstract Reducing the Schottky barrier height and Fermi level de‐pinning in metal‐organic semiconductor contacts are crucial for enhancing the performance of organic transistors. The reduction of the Schottky barrier height in bottom‐contact top‐gate organic transistors is demonstrated by adding 1 nm thick atomic layer deposited Al 2 O 3 on the source and drain contacts. By using two different donor‐acceptor copolymers, both p‐ and n‐ type transistors are investigated. Temperature‐dependent current–voltage measurements from non‐treated, self‐assembled monolayer treated, and Al 2 O 3 treated Au source‐drain contact field‐effect transistors with varying channel lengths are carried out. The drain current versus drain voltage near zero gate voltage, which may be described by the thermionic emission model at temperatures above 150 K, allows the estimation of the Schottky barrier height ( φ B ). The Al 2 O 3 contact‐treated transistors show more than 40% lower φ B compared with the non‐treated contacts in the p ‐type transistor. Similarly, an isoindigo‐based transistor, with n ‐type transport, shows a reduction in φ B with Al 2 O 3 treated contacts suggesting that such ultrathin oxide layers provide a universal method for reducing the barrier height.

Ghobadi, Arash↗
DOE OSTI2023

Automatic voltage regulation application for PV inverters in low-voltage distribution grids – A digital twin approach

This paper proposes a hierarchical coordinated control strategy for PV inverters to keep voltages in low-voltage (LV) distribution grids within specified limits. The top layer of the proposed architecture consists of the designed automatic voltage regulation (AVR) application, which has access to voltage measurements and grid parameters from the LV distribution grid, both current and historical. The AVR application solves a constrained optimization problem, which provides a set of local control set-points that bring the voltage across the grid within bounds. The middle layer consists of a local Volt/VAR controller, which is adjusted by the AVR app, while the bottom layer is the inner-loop controller of the PV inverter. The proposed method not only improves the voltage quality in the grid but also manages the reactive power outputs of PV inverters efficiently. Further, a digital twin of the cyber-physical system has also been employed that interacts with the control system to ensure its appropriate operation. The effectiveness of the proposed methodology is demonstrated on a representative low-voltage feeder located in Denmark.

24 POWER TRANSMISSION AND DISTRIBUTION↗