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At least 37 records · Page 2

FE-SEM, FIB and TEM Study of Surface Deposits of Apollo 15 Green Glass Volcanic Spherules

Surface deposits on lunar pyroclastic green (Apollo 15) and orange (Apollo 17) glass spherules have been attributed to condensation from the gas clouds that accompanied fire-fountain eruptions. The fire fountains cast molten lava high above the lunar surface and the silicate melt droplets quenched before landing producing the glass beads. Early investigations showed that these deposits are rich in sulfur and zinc. The deposits are extremely fine-grained and thin, so that it was never possible to determine their chemical compositions cleanly by SEM/EDX or electron probe x-ray analysis because most of the excited volume was in the under-lying silicate glass. We are investigating the surface deposits by TEM, using focused ion beam (FIB) microscopy to extract and thin the surface deposits. Here we report on chemical mapping of a FIB section of surface deposits of an Apollo green glass bead 15401using the ultra-high resolution JEOL 2500 STEM located at NASA Johnson Space Center.

Ross, Daniel K.↗

Diamondlike carbon protective coatings for optical windows

Diamondlike carbon (DLC) films were deposited on infrared transmitting optical windows and were evaluated as protective coatings for these windows exposed to particle and rain erosion. The DLC films were deposited on zinc selenide (ZnSe) and zinc sulfide (ZnS) by three different ion beam methods: (1) sputter deposition from a carbon target using an 8-cm argon ion source; (2) direct deposition by a 30-cm hollow cathode ion source with hydrocarbon gas in argon; and (3) dual beam direct deposition by the 30-cm hollow cathode ion source and an 8-cm argon ion source. In an attempt to improve the adherence of the DLC films on ZnSc and ZnS, ion beam cleaning, ion implantation with helium and neon ions, or sputter deposition of a thin, ion beam intermediate coating was employed prior to deposition of the DLC film. The protection that the DLC films afforded the windows from particle and rain erosion was evaluated, along with the hydrogen content, adherence, intrinsic stress, and infrared transmittance of the films. Because of the elevated stress levels in the ion beam sputtered DLC films and in those ion beam deposited with butane, films thicker than 0.1 micron and with good adherence on ZnS and ZnSe could not be generated. An intermediate coating of germanium successfully allowed the DLC films to remain adherent to the optical windows and caused only negligible reduction in the specular transmittance of the ZnS and ZnSe at 10 microns.

Swec, Diane M.↗

Diamondlike carbon protective coatings for optical windows

Diamondlike carbon (DLC) films were deposited on infrared transmitting optical windows and were evaluated as protective coatings for these windows exposed to particle and rain erosion. The DLC films were deposited on zinc selenide (ZnSe) and zinc sulfide (ZnS) by three different ion beam methods: (1) sputter deposition from a carbon target using an 8-cm argon ion source; (2) direct deposition by a 30-cm hollow cathode ion source with hydrocarbon gas in argon; and (3) dual beam direct deposition by the 30-cm hollow cathode ion source and an 8-cm argon ion source. In an attempt to improve the adherence of the DLC films on ZnSc and ZnS, ion beam cleaning, ion implantation with helium and neon ions, or sputter deposition of a thin, ion beam intermediate coating was employed prior to deposition of the DLC film. The protection that the DLC films afforded the windows from particle and rain erosion was evaluated, along with the hydrogen content, adherence, intrinsic stress, and infrared transmittance of the films. Because of the elevated stress levels in the ion beam sputtered DLC films and in those ion beam deposited with butane, films thicker than 0.1 micron and with good adherence on ZnS and ZnSe could not be generated. An intermediate coating of germanium successfully allowed the DLC films to remain adherent to the optical windows and caused only negligible reduction in the specular transmittance of the ZnS and ZnSe at 10 microns.

Swec, Diane M.↗

A cdse-znse thin film rectifier.

Properties of thin film rectifier formed on glass substrate by vacuum-depositing cadmium selenide- zinc selenide film between two deposited gold electrodes

CADMIUM SELENIDE↗

Polyvinyl alcohol coating induced preferred crystallographic orientation in aqueous zinc battery anodes

The development of rechargeable aqueous zinc batteries is mainly hindered by the Zn anode, which suffers from dendrite growth, corrosion, hydrogen evolution, and surface passivation. Herein, a thin polyvinyl alcohol (PVA) coating layer on Zn anode has enabled dendrite-free, long-life aqueous Zn batteries by effectively regulating the interfacial ion diffusion and inducing the homogeneous Zn nucleation and deposition of stacked plates with preferentially crystallographic orientation along (002) Zn planes. The PVA@Zn anode achieved an ultralong cycle lifespan of thousands of hours at 0.25 and 1 mA cm -2 . Outstanding durability under a deep cycling capacity (5 mA h cm -2 ), high current density (10 mA cm -2 ), and long duration conditions were achieved. The superior cyclability of PVA@Zn anode was also demonstrated in PVA@Zn//V 2 O 5 full cells. In conclusion, the insights of PVA induced Zn deposition with preferred crystal orientation and interfacial regulation shed light on the future development of stable Zn anodes.

Crystallographic orientation↗

Extreme Ultraviolet and Beyond Extreme Ultraviolet Lithography Using Amorphous Zeolitic Imidazolate Resists Deposited by Atomic/Molecular Layer Deposition

Amorphous zinc-imidazolate (aZnMIm) resists show potential to meet the demands for next-generation high-numerical aperture (high-NA) metal-containing extreme ultraviolet (EUV) resist materials, given their ease of deposition by atomic/molecular layer deposition (ALD/MLD) at thicknesses of 20 nm and below. Here, this study demonstrates that aZnMIm thin films, previously identified as high-resolution electron beam resists, can also function as negative-tone EUV photoresists. Water development achieves high sensitivity (5 mJ/cm 2 ) but leaves significant residue, while acetic acid development results in poor contrast. A hybrid approach─water followed by acetic acid─enables residue-free development with a sensitivity of 181 mJ/cm 2 . Dry development using 1,1,1,5,5,5-hexafluoroacetylacetone (hfacH) is also possible but shows lower sensitivity (375 mJ/cm 2 ) compared to wet development methods. EUV photoelectron spectroscopy (PES), reflectometry/EUV absorption, total electron yield (TEY), residual gas analysis (RGA), and time-of-flight secondary ion mass spectrometry (TOF-SIMS) were used to investigate the effects of EUV irradiation on aZnMIm resists. Reflectometry experiments reveal an aZnMIm EUV absorption coefficient of 6.2 μm –1 , while PES and TEY analyses show that, compared to poly(4-hydroxystyrene) (PHS), a polymer-based reference resist, aZnMIm emits more primary and secondary electrons but generates fewer slow electrons relative to its primary electron emission; its total electron yield is similar to that of poly(methyl methacrylate) (PMMA) resists. When exposed to EUV, aZnMIm predominantly outgasses H 2 , as determined by RGA. TOF-SIMS measurements demonstrate that high-dose EUV exposure only partially fragments the 2-methylimidazole (2MIm) organic linkers, unlike high-dose electron beam exposure, which is known to completely degrade them. Additionally, aZnMIm resists show promise for potential beyond EUV lithography (BEUVL) due to the presence of Zn, which provides higher sensitivity at a wavelength of 6.7 nm compared to other metal ions, such as Sn, that are currently used in the best-performing EUV metal–organic resists. TEY measurements demonstrate that aZnMIm emits nearly twice as many electrons as PHS at 6.7 nm. The BEUV TEY of aZnMIm also surpasses that of PMMA, poly(pentafluorostyrene), and poly(4-iodostyrene), with the latter two being known for their high EUV TEYs. This work provides insight into zeolitic imidazolate framework (ZIF)-based EUV and BEUV resists and highlights their potential for both wet and dry development.

lithography↗

Anion Association Strength as a Unifying Descriptor for the Reversibility of Divalent Metal Deposition in Nonaqueous Electrolytes

Developing next-generation battery chemistries that move beyond traditional Li-ion systems is critical to enabling transformative advances in electrified transportation and grid-level energy storage. Here, we provide the first evidence for common descriptors for improved reversibility of metal plating/stripping in nonaqueous electrolytes for multivalent ion batteries. Focusing first on the specific role of chloride (Cl – ) in promoting electrochemical reversibility in multivalent systems, rotating disk (RDE) and ring-disk electrode (RRDE) investigations were performed utilizing a variety of divalent cations (Mg 2+ , Zn 2+ , and Cu 2+ ) and the bis-(trifluoromethane sulfonyl) imide (TFSI – ) anion. By introducing varying concentrations of Cl – , a cooperative effect is observed between TFSI – and Cl – that yields the more reversible behavior of mixed electrolytes relative to electrolytes containing only TFSI – . This effect is shown to be general for Mg, Zn, and Cu electrodeposition, and mechanistic understanding of the role of Cl – in improving reversibility of TFSI-based electrolytes is obtained through the combination of R(R)DE experimental results and density functional theory (DFT) evaluation of the redox activity and thermodynamic stability of various TFSI- and Cl-based solution complexes of metal ions. The cooperative anion effect is further generalized to other mixed-anion systems, where systematic variations in anion association strength predicted from DFT (i.e., Cl – > OTf – ≈ TFSI – > BF 4 – > PF 6 – ) yield corresponding trends in redox potentials and improvements of ≥200 mV in the reversibility of metal deposition/dissolution. These results identify anion association strength as a common descriptor for the reversibility of divalent metal anodes and suggest a set of general design principles for developing new electrolytes with improved activity and stability.

25 ENERGY STORAGE↗

15.3% AM1.5G Efficiency GaAs Solar Cells Fabricated via an Epitaxy-Free Process

Here, we report simple and potentially low-cost techniques for creating high-quality n-type gallium arsenide (GaAs) and GaAs p/n junctions and fabricate GaAs p/n junction solar cells. Detailed-balance modeling suggests that 20% AM1.5G efficiency p/n homojunction devices may be possible if the surface doping concentration can be limited to values less than ∼ 5 × 10 19 cm −3 . Our process exploits an open-tube, vapor-phase, deposition-free, zinc diffusion technique for forming p-type layers in melt-grown n-GaAs substrates that results in sheet resistances less than 1 kΩ/$\square$. In addition, we have improved the minority carrier diffusion lengths of melt-grown GaAs from less than one micron to over five microns using an open-tube, vacuum-free, annealing process which reduces the density of EL2 midgap defects. Finally, we have combined these advances to fabricate epitaxy-free, GaAs solar cells with a validated AM1.5G efficiency of 15.3%.

14 SOLAR ENERGY↗

Effect of Fluid Flow on Zinc Electrodeposits from Acid Chloride Electrolytes

Zinc was deposited potentiostatically from acid chloride baths. Once bath chemistry and electrochemistry were controlled, the study was focused on convective mass transfer at horizontal electrodes and its effect on cell performance. A laser schlieren imaging technique allowed in situ observations of flow patterns and their correlation with current transients. Convection was turbulent and mass transfer as a function of Rayleigh number was well correlated by: Sh = 0.14 R to the 1/3 power. Similarly, convection initiation time was correlated by DT/d squared = 38 Ra to the -2/3 power. Time scale of fluctuations was about half the initiation time. Taking the boundary layer thickness as a characteristic length, a critical Rayleigh number for the onset of convection was deduced: Ra sub CR = 5000. Placing the anode on the top of the cathode completely changed the flow pattern but kept the I-t curves identical whereas the use of a cathode grid doubled the limiting current. A well defined plateau in the current voltage curves suggested that hydrogen evolution has been successfully inhibited. Finally, long time deposition showed that convection at horizontal electrodes increased the induction time for dentrite growth by at least a factor of 2 with respect to a vertical wire.

Abdelmassir, A. A.↗

Orbiter Reinforced Carbon-Carbon Advanced Sealant Systems: Screening Tests

Oxidation protection for the Orbiter reinforced carbon-carbon (RCC consists of three components: silicon carbide coating, tetraethyl orthosilicate (TEOS) impregnated into the carbon substrate and a silicon based surface sealant (designated Type A). The Orbiter Type A sealant is being consumed each mission, which results in increased carbon-carbon substrate mass loss, which adversely impacts the mission life of the RCC components. In addition, the sealant loss in combination with launch pad contamination (salt deposit and zinc oxide) results in RCC pinholes. A sealant refurbishment schedule to maintain mission life and minimize affects of pin hole formation has been implemented in the Orbiter maintenance schedule. The objective of this investigation is to develop an advanced sealant system for the RCC that extends the refurbishment schedule by reducing sealant loss/pin hole formation and that can be applied to existing Orbiter RCC components. This paper presents the results of arc jet screening tests conducted on several sealants that are being considered for application to the Orbiter RCC.

Curry, Donald M.↗

High‐Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition

Abstract New deposition techniques for amorphous oxide semiconductors compatible with silicon back end of line manufacturing are needed for 3D monolithic integration of thin‐film electronics. Here, three atomic layer deposition (ALD) processes are compared for the fabrication of amorphous zinc tin oxide (ZTO) channels in bottom‐gate, top‐contact n‐channel transistors. As‐deposited ZTO films, made by ALD at 150–200 °C, exhibit semiconducting, enhancement‐mode behavior with electron mobility as high as 13 cm 2 V −1 s −1 , due to a low density of oxygen‐related defects. ZTO deposited at 200 °C using a hybrid thermal‐plasma ALD process with an optimal tin composition of 21%, post‐annealed at 400 °C, shows excellent performance with a record high mobility of 22.1 cm 2 V –1 s –1 and a subthreshold slope of 0.29 V dec –1 . Increasing the deposition temperature and performing post‐deposition anneals at 300–500 °C lead to an increased density of the X‐ray amorphous ZTO film, improving its electrical properties. By optimizing the ZTO active layer thickness and using a high‐ k gate insulator (ALD Al 2 O 3 ), the transistor switching voltage is lowered, enabling electrical compatibility with silicon integrated circuits. This work opens the possibility of monolithic integration of ALD ZTO‐based thin‐film electronics with silicon integrated circuits or onto large‐area flexible substrates.

Allemang, Christopher R.↗

Expanding the Zinc Precursor Toolbox: A Comparative Study of Precursors for Thermal ALD of ZnO Thin Films

Atomic layer deposition (ALD) of zinc oxide (ZnO) has been widely researched using diethyl zinc (DEZ)-based methods. The significant importance of thin films of ZnO as transparent conductive oxides (TCO) in optoelectronic devices and photovoltaics warrants examining alternative Zn precursors for ZnO ALD as potential replacements for the pyrophoric DEZ. In this study, we investigated three alternative Zn precursors: Zn(EEKI)2, Zn(DMP)2, ZnEt(HMDS), in the process development for high-quality ZnO thin films and compared them to DEZ. The ALD processes were studied using in situ spectroscopic ellipsometry. The properties of the ALD ZnO films were characterized using ex situ X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry and nuclear reaction analysis (RBS/NRA), X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), and ultraviolet-visible (UV/Vis) spectrophotometry. These measurements confirmed the formation of pure, stoichiometric, and polycrystalline ZnO films using all four Zn precursors. Although the selected precursors are chemically diverse Zn compounds, they all yielded saturating ALD processes and high-quality ZnO thin films at 200 °C. This study highlights the potential benefits of alternative zinc precursors in designing ALD processes for ZnO thin films.

Obenlüneschloß, Jorit↗

Surface acoustic wave/silicon monolithic sensor/processor

A new technique for sputter deposition of piezoelectric zinc oxide (ZnO) is described. An argon-ion milling system was converted to sputter zinc oxide films in an oxygen atmosphere using a pure zinc oxide target. Piezoelectric films were grown on silicon dioxide and silicon dioxide overlayed with gold. The sputtered films were evaluated using surface acoustic wave measurements, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and resistivity measurements. The effect of the sputtering conditions on the film quality and the result of post-deposition annealing are discussed. The application of these films to the generation of surface acoustic waves is also discussed.

Kowel, S. T.↗

Deposition and material response from Mach 0.3 burner rig combustion of SRC 2 fuels

Collectors at 1173K (900 C) were exposed to the combustion products of a Mach 0.3 burner rig fueled with various industrial turbine liquid fuels from solvent refined coals. Four fuels were employed: a naphtha, a light oil, a wash solvent and a mid-heavy distillate blend. The response of four superalloys (IN-100, U 700, IN 792 and M-509) to exposure to the combustion gases from the SRC-2 naphtha and resultant deposits was also determined. The SRC-2 fuel analysis and insights obtained during the combustion experience are discussed. Particular problems encountered were fuel instability and reactions of the fuel with hardware components. The major metallic elements which contributed to the deposits were copper, iron, chromium, calcium, aluminum, nickel, silicon, titanium, zinc, and sodium. The deposits were found to be mainly metal oxides. An equilibrium thermodynamic analysis was employed to predict the chemical composition of the deposits. The agreement between the predicted and observed compounds was excellent. No hot corrosion was observed. This was expected because the deposits contained very little sodium or potassium and consisted mainly of the unreactive oxides. However, the amounts of deposits formed indicated that fouling is a potential problem with the use of these fuels.

Santoro, G. J.↗